Homoepitaxy

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H01L21/02634

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/02634Homoepitaxy

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Methods for determining suitability of silicon substrates for epitaxy
- Patent number 12,152,314
- Issue date Nov 26, 2024
- GlobalWafers Co., Ltd.
- Shan-Hui Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for manufacturing semiconductor...
- Patent number 12,046,478
- Issue date Jul 23, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Luguang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Susceptor, epitaxial growth apparatus, method of producing epitaxia...
- Patent number 11,984,346
- Issue date May 14, 2024
- Sumco Corporation
- Kazuhiro Narahara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing beta-Ga2O3-based single crystal film, and crysta...
- Patent number 11,982,016
- Issue date May 14, 2024
- Tamura Corporation
- Ken Goto
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
SiC epitaxial wafer, production method therefor, and defect identif...
- Patent number 11,961,736
- Issue date Apr 16, 2024
- Resonac Corporation
- Ling Guo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing silicon carbide epitaxial wafer
- Patent number 11,948,794
- Issue date Apr 2, 2024
- Mitsubishi Electric Corporation
- Masashi Sakai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for manufacturing a grid
- Patent number 11,876,116
- Issue date Jan 16, 2024
- II-VI DELAWARE, INC.
- Adolf Schöner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing buried gate and method for manufacturing s...
- Patent number 11,862,697
- Issue date Jan 2, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Er-Xuan Ping
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride single crystal substrate
- Patent number 11,767,612
- Issue date Sep 26, 2023
- Tokuyama Corporation
- Masayuki Fukuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing substrate, method for manufacturing semico...
- Patent number 11,764,059
- Issue date Sep 19, 2023
- Kabushiki Kaisha Toshiba
- Johji Nishio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact plugs for semiconductor device
- Patent number 11,756,864
- Issue date Sep 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Mrunal A Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of re-using a silicon carbide substrate
- Patent number 11,735,642
- Issue date Aug 22, 2023
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for depositing III-alloys on substrates and compositions th...
- Patent number 11,721,550
- Issue date Aug 8, 2023
- United States Department of Energy
- Emily Lowell Warren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC epitaxial wafer and method for manufacturing same
- Patent number 11,705,329
- Issue date Jul 18, 2023
- Showa Denko K.K.
- Koji Kamei
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Gallium nitride epitaxial structures for power devices
- Patent number 11,699,750
- Issue date Jul 11, 2023
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-leakage regrown GaN p-n junctions for GaN power devices
- Patent number 11,626,483
- Issue date Apr 11, 2023
- Arizona Board of Regents on behalf of Arizona State University
- Yuji Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC epitaxial wafer and method for producing SiC epitaxial wafer
- Patent number 11,600,538
- Issue date Mar 7, 2023
- Showa Denko K.K.
- Naoto Ishibashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device having a super junction structure and method o...
- Patent number 11,588,016
- Issue date Feb 21, 2023
- Semiconductor Components Industries, LLC
- Jae-gil Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of preparing an isolation region in a high resistivity silic...
- Patent number 11,587,825
- Issue date Feb 21, 2023
- GlobalWafers Co., Ltd.
- Igor Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxially coated semiconductor wafer of monocrystalline silicon a...
- Patent number 11,578,424
- Issue date Feb 14, 2023
- Siltronic AG
- Reinhard Schauer
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Small pitch super junction MOSFET structure and method
- Patent number 11,581,432
- Issue date Feb 14, 2023
- iPower Semiconductor
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Susceptor, epitaxial growth apparatus, method of producing epitaxia...
- Patent number 11,501,996
- Issue date Nov 15, 2022
- Sumco Corporation
- Kazuhiro Narahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a monocrystalline structure
- Patent number 11,380,543
- Issue date Jul 5, 2022
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Pierre-Edouard Raynal
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of preparing an isolation region in a high resistivity silic...
- Patent number 11,380,576
- Issue date Jul 5, 2022
- GlobalWafers Co., Ltd.
- Igor Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Susceptor for holding a semiconductor wafer having an orientation n...
- Patent number 11,380,621
- Issue date Jul 5, 2022
- Siltronic AG
- Reinhard Schauer
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device, method of manufacturing same, and sensor
- Patent number 11,380,764
- Issue date Jul 5, 2022
- Hitachi, Ltd.
- Masahiro Masunaga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer including silicon carbide wafer and method for...
- Patent number 11,348,844
- Issue date May 31, 2022
- Denso Corporation
- Shinya Takei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a grid
- Patent number 11,342,423
- Issue date May 24, 2022
- II-VI DELAWARE, INC.
- Adolf Schöner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a SiC epitaxial wafer containing a total densi...
- Patent number 11,293,115
- Issue date Apr 5, 2022
- Showa Denko K.K.
- Ling Guo
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Virtual wafer techniques for fabricating semiconductor devices
- Patent number 11,295,949
- Issue date Apr 5, 2022
- Vishay SIliconix, LLC
- M. Ayman Shibib
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240290881
- Publication date Aug 29, 2024
- RENESAS ELECTRONICS CORPORATION
- Yasuhiro OKAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE
- Publication number 20240222439
- Publication date Jul 4, 2024
- M7D Corporation
- John P. Ciraldo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR SIC STEP FLOW GROWTH BY REGULATING GROWTH MONMOERS USING...
- Publication number 20240183063
- Publication date Jun 6, 2024
- XIAMEN UNIVERSITY
- Junyong KANG
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING A GRID
- Publication number 20240105783
- Publication date Mar 28, 2024
- II-VI Delaware, Inc.
- Adolf Schöner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT PLUGS FOR SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME
- Publication number 20240021501
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Mrunal A. Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH CURRENT TERMINAL REGIONS AND CHANNEL REGION IN LAYE...
- Publication number 20230420546
- Publication date Dec 28, 2023
- NXP USA, Inc.
- Petrus Hubertus Cornelis Magnee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE SINGLE CRYSTAL SUBSTRATE
- Publication number 20230407521
- Publication date Dec 21, 2023
- Tokuyama Corporation
- Masayuki FUKUDA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
FABRICATING APPARATUS OF SIC EPITAXIAL WAFER AND FABRICATION METHOD...
- Publication number 20230374698
- Publication date Nov 23, 2023
- ROHM CO., LTD.
- Makoto TAKAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Semiconductor Devices in a Layer of Epitaxial Si...
- Publication number 20230361196
- Publication date Nov 9, 2023
- Infineon Techmologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCT...
- Publication number 20230295837
- Publication date Sep 21, 2023
- Kokusai Electric Corporation
- Kaichiro MINAMI
- C30 - CRYSTAL GROWTH
Information Patent Application
VAPOR PHASE GROWTH SYSTEM AND METHOD OF PRODUCING EPITAXIAL WAFER
- Publication number 20230265580
- Publication date Aug 24, 2023
- Epicrew Corporation
- Akira Okabe
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SiC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SAME
- Publication number 20230268177
- Publication date Aug 24, 2023
- SHOWA DENKO K.K.
- Koji KAMEI
- C01 - INORGANIC CHEMISTRY
Information Patent Application
GALLIUM NITRIDE EPITAXIAL STRUCTURES FOR POWER DEVICES
- Publication number 20230261101
- Publication date Aug 17, 2023
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A SUPER JUNCTION STRUCTURE AND METHOD O...
- Publication number 20230197775
- Publication date Jun 22, 2023
- Semiconductor Components Industries, LLC
- Jae-gil LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING SAME
- Publication number 20230162978
- Publication date May 25, 2023
- TAMURA CORPORATION
- Quang Tu THIEU
- C30 - CRYSTAL GROWTH
Information Patent Application
HIGH RESISTIVITY SILICON-ON-INSULATOR SUBSTRATE COMPRISING AN ISOLA...
- Publication number 20230163022
- Publication date May 25, 2023
- GLOBALWAFERS CO., LTD.
- Igor Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON WAFER AND EPITAXIAL SILICON WAFER
- Publication number 20230133472
- Publication date May 4, 2023
- SUMCO CORPORATION
- Kohtaroh KOGA
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20230100453
- Publication date Mar 30, 2023
- FUJI ELECTRIC CO., LTD.
- Takeshi TAWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING CONDUCTIVE MEMBER AND METHOD OF FORMING CHANNEL
- Publication number 20230086545
- Publication date Mar 23, 2023
- TOKYO ELECTRON LIMITED
- Koji AKIYAMA
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230077367
- Publication date Mar 16, 2023
- RENESAS ELECTRONICS CORPORATION
- Yasuhiro OKAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUSCEPTOR, EPITAXIAL GROWTH APPARATUS, METHOD OF PRODUCING EPITAXIA...
- Publication number 20230061603
- Publication date Mar 2, 2023
- SUMCO CORPORATION
- Kazuhiro Narahara
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
FILM FORMATION APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR...
- Publication number 20230059168
- Publication date Feb 23, 2023
- DENSO CORPORATION
- Tatsuji NAGAOKA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
LIFT PIN, WAFER PROCESSING APPARATUS COMPRISING SAME, AND METHOD FO...
- Publication number 20230039939
- Publication date Feb 9, 2023
- SK SILTRON CO., LTD.
- Mi Ri KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SEMICONDUCTOR...
- Publication number 20230010594
- Publication date Jan 12, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Luguang WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANISOTROPIC EPITAXIAL GROWTH
- Publication number 20220319844
- Publication date Oct 6, 2022
- Applied Materials, Inc.
- Chia Cheng CHIN
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR GROWING EPITAXIAL LAYER ON WAFER
- Publication number 20220316090
- Publication date Oct 6, 2022
- SK SILTRON CO., LTD.
- Dong Ho KANG
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC EPITAXIAL WAFER, PRODUCTION METHOD THEREFOR, AND DEFECT IDENTIF...
- Publication number 20220259764
- Publication date Aug 18, 2022
- SHOWA DENKO K.K.
- Ling GUO
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHOD FOR MANUFACTURING A GRID
- Publication number 20220254887
- Publication date Aug 11, 2022
- II-VI Delaware, Inc.
- Adolf Schöner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC EPITAXIAL WAFER AND METHOD FOR PRODUCING SiC EPITAXIAL WAFER
- Publication number 20220173001
- Publication date Jun 2, 2022
- SHOWA DENKO K.K.
- Naoto ISHIBASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR DEPOSITING III-ALLOYS ON SUBSTRATES AND COMPOSITIONS TH...
- Publication number 20220108889
- Publication date Apr 7, 2022
- UNITED STATES DEPARTMENT OF ENERGY
- Emily Lowell Warren
- H01 - BASIC ELECTRIC ELEMENTS

Homoepitaxy

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Methods for determining suitability of silicon substrates for epitaxy

Semiconductor structure and method for manufacturing semiconductor...

Susceptor, epitaxial growth apparatus, method of producing epitaxia...

Method for growing beta-Ga2O3-based single crystal film, and crysta...

SiC epitaxial wafer, production method therefor, and defect identif...

Method of manufacturing silicon carbide epitaxial wafer

Method for manufacturing a grid

Method for manufacturing buried gate and method for manufacturing s...

Group III nitride single crystal substrate

Method for manufacturing substrate, method for manufacturing semico...

Contact plugs for semiconductor device

Methods of re-using a silicon carbide substrate

Methods for depositing III-alloys on substrates and compositions th...

SiC epitaxial wafer and method for manufacturing same

Gallium nitride epitaxial structures for power devices

Low-leakage regrown GaN p-n junctions for GaN power devices

SiC epitaxial wafer and method for producing SiC epitaxial wafer

Semiconductor device having a super junction structure and method o...

Method of preparing an isolation region in a high resistivity silic...

Epitaxially coated semiconductor wafer of monocrystalline silicon a...

Small pitch super junction MOSFET structure and method

Susceptor, epitaxial growth apparatus, method of producing epitaxia...

Method for fabricating a monocrystalline structure

Method of preparing an isolation region in a high resistivity silic...

Susceptor for holding a semiconductor wafer having an orientation n...

Semiconductor device, method of manufacturing same, and sensor

Semiconductor wafer including silicon carbide wafer and method for...

Method for manufacturing a grid

Method for producing a SiC epitaxial wafer containing a total densi...

Virtual wafer techniques for fabricating semiconductor devices

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR SUBSTRATE

METHOD FOR SIC STEP FLOW GROWTH BY REGULATING GROWTH MONMOERS USING...

METHOD FOR MANUFACTURING A GRID

CONTACT PLUGS FOR SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME

TRANSISTOR WITH CURRENT TERMINAL REGIONS AND CHANNEL REGION IN LAYE...

GROUP III NITRIDE SINGLE CRYSTAL SUBSTRATE

FABRICATING APPARATUS OF SIC EPITAXIAL WAFER AND FABRICATION METHOD...

Methods of Forming Semiconductor Devices in a Layer of Epitaxial Si...

METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCT...

VAPOR PHASE GROWTH SYSTEM AND METHOD OF PRODUCING EPITAXIAL WAFER

SiC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SAME

GALLIUM NITRIDE EPITAXIAL STRUCTURES FOR POWER DEVICES

SEMICONDUCTOR DEVICE HAVING A SUPER JUNCTION STRUCTURE AND METHOD O...

SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING SAME

HIGH RESISTIVITY SILICON-ON-INSULATOR SUBSTRATE COMPRISING AN ISOLA...

SILICON WAFER AND EPITAXIAL SILICON WAFER

SILICON CARBIDE SEMICONDUCTOR DEVICE

METHOD OF FORMING CONDUCTIVE MEMBER AND METHOD OF FORMING CHANNEL

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SUSCEPTOR, EPITAXIAL GROWTH APPARATUS, METHOD OF PRODUCING EPITAXIA...

FILM FORMATION APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR...

LIFT PIN, WAFER PROCESSING APPARATUS COMPRISING SAME, AND METHOD FO...

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SEMICONDUCTOR...

ANISOTROPIC EPITAXIAL GROWTH

METHOD FOR GROWING EPITAXIAL LAYER ON WAFER

SiC EPITAXIAL WAFER, PRODUCTION METHOD THEREFOR, AND DEFECT IDENTIF...

METHOD FOR MANUFACTURING A GRID

SiC EPITAXIAL WAFER AND METHOD FOR PRODUCING SiC EPITAXIAL WAFER

METHODS FOR DEPOSITING III-ALLOYS ON SUBSTRATES AND COMPOSITIONS TH...