In(As)N with small amount of P, or In(As)P with small amount of N

Industry

CPC
H01S5/32375

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Parent Industries

HELECTRICITY H01Electric elements H01SDEVICES USING STIMULATED EMISSION H01S5/00Semiconductor lasers

Current Industry

H01S5/32375In(As)N with small amount of P, or In(As)P with small amount of N

Industries

Patents Grantslast 30 patents

Information Patent Grant
Compact, power-efficient stacked broadband optical emitters
- Patent number 11,022,491
- Issue date Jun 1, 2021
- ams Sensors Singapore Pte. Ltd.
- Peter Riel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compact, power-efficient stacked broadband optical emitters
- Patent number 10,656,014
- Issue date May 19, 2020
- ams Sensors Singapore Pte. Ltd.
- Peter Riel
- G01 - MEASURING TESTING
Information Patent Grant
Laser diode having an active layer containing N and operable in a 0...
- Patent number 7,384,479
- Issue date Jun 10, 2008
- Ricoh Company, Ltd.
- Naoto Jikutani
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor laser structure
- Patent number 7,088,753
- Issue date Aug 8, 2006
- Infineon Technologies AG
- Henning Riechert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optical semiconductor device having an active layer containing N
- Patent number 6,879,614
- Issue date Apr 12, 2005
- Ricoh Company, Ltd.
- Shunichi Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser device having a high characteristic temperature
- Patent number 6,858,863
- Issue date Feb 22, 2005
- The Furukawa Electric Co., Ltd.
- Hitoshi Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optical semiconductor device having an active layer containing N
- Patent number 6,449,299
- Issue date Sep 10, 2002
- Ricoh Company, Ltd.
- Shunichi Sato
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Methods for forming group III-arsenide-nitride semiconductor materials
- Patent number 6,342,405
- Issue date Jan 29, 2002
- JDS Uniphase Corporation
- Jo S. Major
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor laser device, optical communication system using the...
- Patent number 6,256,331
- Issue date Jul 3, 2001
- Matsushita Electric Industrial Co., Ltd.
- Masahiro Kitoh
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optical semiconductor device having an active layer containing N
- Patent number 6,233,264
- Issue date May 15, 2001
- Ricoh Company, Ltd.
- Shunichi Sato
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Methods for forming group III-V arsenide-nitride semiconductor mate...
- Patent number 6,130,147
- Issue date Oct 10, 2000
- SDL, Inc.
- Jo S. Major
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V arsenide-nitride semiconductor
- Patent number 6,100,546
- Issue date Aug 8, 2000
- SDL, Inc.
- Jo S. Major
- C30 - CRYSTAL GROWTH
Information Patent Grant
semiconductor light emitting devices
- Patent number 6,072,196
- Issue date Jun 6, 2000
- Ricoh Company, Ltd.
- Shunichi Sato
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Fabrication method for AlGaIn NPAsSb based devices
- Patent number 5,937,274
- Issue date Aug 10, 1999
- Hitachi, Ltd.
- Masahiko Kondow
- B82 - NANO-TECHNOLOGY
Information Patent Grant
III-V aresenide-nitride semiconductor materials and devices
- Patent number 5,689,123
- Issue date Nov 18, 1997
- SDL, Inc.
- Jo S. Major
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
Laser diode having an active layer containing N and operable in a 0...
- Publication number 20050238075
- Publication date Oct 27, 2005
- Naoto Jikutani
- G11 - INFORMATION STORAGE
Information Patent Application
Optical semiconductor device having an active layer containing N
- Publication number 20050169334
- Publication date Aug 4, 2005
- Shunichi Sato
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor laser structure
- Publication number 20030179792
- Publication date Sep 25, 2003
- Henning Riechert
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor laser device having a high characteristic temperature
- Publication number 20030013224
- Publication date Jan 16, 2003
- Hitoshi Shimizu
- B82 - NANO-TECHNOLOGY
Information Patent Application
Optical semiconductor device having an active layer containing N
- Publication number 20020195607
- Publication date Dec 26, 2002
- Shunichi Sato
- B82 - NANO-TECHNOLOGY

In(As)N with small amount of P, or In(As)P with small amount of N

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Compact, power-efficient stacked broadband optical emitters

Compact, power-efficient stacked broadband optical emitters

Laser diode having an active layer containing N and operable in a 0...

Semiconductor laser structure

Optical semiconductor device having an active layer containing N

Semiconductor laser device having a high characteristic temperature

Optical semiconductor device having an active layer containing N

Methods for forming group III-arsenide-nitride semiconductor materials

Semiconductor laser device, optical communication system using the...

Optical semiconductor device having an active layer containing N

Methods for forming group III-V arsenide-nitride semiconductor mate...

III-V arsenide-nitride semiconductor

semiconductor light emitting devices

Fabrication method for AlGaIn NPAsSb based devices

III-V aresenide-nitride semiconductor materials and devices

Patents Applicationslast 30 patents

Laser diode having an active layer containing N and operable in a 0...

Optical semiconductor device having an active layer containing N

Semiconductor laser structure

Semiconductor laser device having a high characteristic temperature

Optical semiconductor device having an active layer containing N