including components using galvano-magnetic effects

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

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H01L27/22including components using galvano-magnetic effects

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and manufacturing method of semiconductor device
- Patent number 11,706,999
- Issue date Jul 18, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien-Min Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance MgO capping layer for perpendicularly magnetized mag...
- Patent number 11,696,511
- Issue date Jul 4, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sahil Patel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive stack with seed region and method of manufacturing...
- Patent number 11,690,229
- Issue date Jun 27, 2023
- EVERSPIN TECHNOLOGIES, INC.
- Jijun Sun
- G11 - INFORMATION STORAGE
Information Patent Grant
Forced current access with voltage clamping in cross-point array
- Patent number 11,688,446
- Issue date Jun 27, 2023
- SanDisk Technologies LLC
- Michael Nicolas Albert Tran
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic field controlled transistor
- Patent number 11,683,938
- Issue date Jun 20, 2023
- International Business Machines Corporation
- Cezar Bogdan Zota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory device
- Patent number 11,683,992
- Issue date Jun 20, 2023
- Samsung Electronics Co., Ltd.
- Hyungjong Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forced current access with voltage clamping in cross-point array
- Patent number 11,682,442
- Issue date Jun 20, 2023
- SanDisk Technologies LLC
- Michael Nicolas Albert Tran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,683,988
- Issue date Jun 20, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tai-Yen Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory systems with vertical integration
- Patent number 11,676,641
- Issue date Jun 13, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chieh Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing magnetic tunnel junction and magnetic tunne...
- Patent number 11,678,583
- Issue date Jun 13, 2023
- HITACHI HIGH-TECH CORPORATION
- Yu Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seed layer for multilayer magnetic materials
- Patent number 11,672,182
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device having a ferromagnetic element
- Patent number 11,672,183
- Issue date Jun 6, 2023
- Samsung Electronics Co., Ltd.
- Sang Hwan Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory
- Patent number 11,672,181
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huang-Wen Tseng
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction (MTJ) device and manufacturing method thereof
- Patent number 11,672,184
- Issue date Jun 6, 2023
- United Microelectronics Corp.
- Chih-Wei Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic device and magnetic random access memory
- Patent number 11,672,185
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Feng Ying
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor devices and methods of manufacturing
- Patent number 11,672,180
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tsung-Hsueh Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of semiconductor device
- Patent number 11,672,186
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien-Min Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming memory cell
- Patent number 11,665,911
- Issue date May 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yuan-Tai Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive random access memory (MRAM) device
- Patent number 11,665,970
- Issue date May 30, 2023
- Samsung Electronics Co., Ltd.
- Whan-Kyun Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin orbit coupling memory device with top spin orbit coupling elec...
- Patent number 11,665,975
- Issue date May 30, 2023
- Intel Corporation
- Tanay Gosavi
- G11 - INFORMATION STORAGE
Information Patent Grant
Metal etching stop layer in magnetic tunnel junction memory cells
- Patent number 11,665,971
- Issue date May 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tai-Yen Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction device and method
- Patent number 11,665,977
- Issue date May 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tai-Yen Peng
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic junctions having enhanced tunnel magnetoresistance and uti...
- Patent number 11,665,979
- Issue date May 30, 2023
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory and manufacturing method thereof
- Patent number 11,659,718
- Issue date May 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ji-Feng Ying
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device
- Patent number 11,659,719
- Issue date May 23, 2023
- Samsung Electronics Co., Ltd.
- Kilho Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device, magnetoresistive random access memory device,...
- Patent number 11,659,770
- Issue date May 23, 2023
- Samsung Electronics Co., Ltd.
- Dae-Shik Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Structure and method for integrating MRAM and logic devices
- Patent number 11,659,771
- Issue date May 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsiang-Ku Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for MRAM devices having spacer element
- Patent number 11,659,774
- Issue date May 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsiang-Ku Shen
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory devices
- Patent number 11,651,995
- Issue date May 16, 2023
- Samsung Electronics Co., Ltd.
- Sangkuk Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing techniques and corresponding devices for magnetic tun...
- Patent number 11,653,572
- Issue date May 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MRAM DEVICE WITH OCTAGON PROFILE
- Publication number 20240233793
- Publication date Jul 11, 2024
- International Business Machines Corporation
- Oscar van der Straten
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM DEVICE WITH WRAP-AROUND TOP ELECTRODE CONTACT
- Publication number 20240206345
- Publication date Jun 20, 2024
- International Business Machines Corporation
- Ashim Dutta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY STRUCTURE
- Publication number 20240206347
- Publication date Jun 20, 2024
- Industrial Technology Research Institute
- Ziaur Rahaman Shakh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM WITH A MULTI-COMPONENT, MULTI-LAYER BOTTOM ELECTRODE
- Publication number 20240206346
- Publication date Jun 20, 2024
- International Business Machines Corporation
- Shravana Kumar Katakam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM DEVICE WITH HAMMERHEAD PROFILE
- Publication number 20240196758
- Publication date Jun 13, 2024
- International Business Machines Corporation
- Koichi Motoyama
- G11 - INFORMATION STORAGE
Information Patent Application
REACTIVE SERIAL RESISTANCE REDUCTION FOR MAGNETORESISTIVE RANDOM-AC...
- Publication number 20240196755
- Publication date Jun 13, 2024
- International Business Machines Corporation
- Matthias Georg Gottwald
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM DEVICE WITH WRAP-AROUND TOP ELECTRODE
- Publication number 20240188446
- Publication date Jun 6, 2024
- International Business Machines Corporation
- Shravana Kumar Katakam
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY STRUCTURE WITH NON-ION BEAM ETCHED MTJ AND TOP ELECTRODE
- Publication number 20240188447
- Publication date Jun 6, 2024
- International Business Machines Corporation
- Chanro Park
- G11 - INFORMATION STORAGE
Information Patent Application
MULTIPLE LAYERS OF VOID-FREE INTERLAYER DIELECTRIC BETWEEN ADJACENT...
- Publication number 20240188448
- Publication date Jun 6, 2024
- International Business Machines Corporation
- Oscar van der Straten
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diamond Shaped Magnetic Random Access Memory
- Publication number 20240180045
- Publication date May 30, 2024
- International Business Machines Corporation
- Oscar van der Straten
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUIT ARCHITECTURE USING TRANSISTORS WITH DYNAMIC DUAL FUNCTIONAL...
- Publication number 20240172454
- Publication date May 23, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FAST SWITCHING MRAM HAVING AN ALUMINUM-MANGANESE-GERMANIUM FREE LAY...
- Publication number 20240164219
- Publication date May 16, 2024
- International Business Machines Corporation
- Matthias Georg Gottwald
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SWITCHABLE MAGNETIC DEVICE OR DOT FOR DATA STORAGE
- Publication number 20240147869
- Publication date May 2, 2024
- Harry Joseph TRODAHL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM DEVICE WITH OCTAGON PROFILE
- Publication number 20240135978
- Publication date Apr 25, 2024
- International Business Machines Corporation
- Oscar van der Straten
- G11 - INFORMATION STORAGE
Information Patent Application
TOP CONTACT STRUCTURE FOR EMBEDDED MRAM
- Publication number 20240130242
- Publication date Apr 18, 2024
- International Business Machines Corporation
- Ailian Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION DEVICE
- Publication number 20240130243
- Publication date Apr 18, 2024
- International Business Machines Corporation
- Timothy Mathew Philip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHAMFERED MRAM DEVICE STRUCTURE
- Publication number 20240130244
- Publication date Apr 18, 2024
- International Business Machines Corporation
- Oscar van der Straten
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM DEVICE STRUCTURE WITH IMPROVED TOP ELECTRODE
- Publication number 20240130245
- Publication date Apr 18, 2024
- International Business Machines Corporation
- Oscar van der Straten
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CoFeB Based Magnetic Tunnel Junction Device with Boron Encapsulatio...
- Publication number 20240122076
- Publication date Apr 11, 2024
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE MRAM WITH FRONTSIDE DEVICES
- Publication number 20240114699
- Publication date Apr 4, 2024
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN-ORBIT-TORQUE (SOT) MRAM WITH DOUBLED LAYER OF SOT METAL
- Publication number 20240112712
- Publication date Apr 4, 2024
- International Business Machines Corporation
- Pouya Hashemi
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR FABRICATING TH...
- Publication number 20240114803
- Publication date Apr 4, 2024
- UNITED MICROELECTRONICS CORP.
- Hui-Lin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cobalt-Boron (CoB) Layer for Magnetic Recording Devices, Memory Dev...
- Publication number 20240112840
- Publication date Apr 4, 2024
- Western Digital Technologies, Inc.
- Susumu OKAMURA
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240107890
- Publication date Mar 28, 2024
- UNITED MICROELECTRONICS CORP.
- Hui-Lin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM STRUCTURE WITH CHIRAL SPIN-ORBIT-TORQUE METAL ELECTRODE
- Publication number 20240107896
- Publication date Mar 28, 2024
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOT MRAM STRUCTURE AND FABRICATING METHOD OF THE SAME
- Publication number 20240107777
- Publication date Mar 28, 2024
- UNITED MICROELECTRONICS CORP.
- Chih-Wei Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetoresistive Devices Comprising A Synthetic Antiferromagnetic C...
- Publication number 20240107893
- Publication date Mar 28, 2024
- Western Digital Technologies, Inc.
- Susumu OKAMURA
- G11 - INFORMATION STORAGE
Information Patent Application
STACKED FET WITH THREE-TERMINAL SOT MRAM
- Publication number 20240105244
- Publication date Mar 28, 2024
- International Business Machines Corporation
- Pouya Hashemi
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM DEVICE WITH ANNULAR ELECTRODES
- Publication number 20240107894
- Publication date Mar 28, 2024
- International Business Machines Corporation
- Oscar van der Straten
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETO RESISTIVE ELEMENT
- Publication number 20240099152
- Publication date Mar 21, 2024
- TDK Corporation
- Kazuumi INUBUSHI
- G11 - INFORMATION STORAGE

including components using galvano-magnetic effects

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device and manufacturing method of semiconductor device

Low resistance MgO capping layer for perpendicularly magnetized mag...

Magnetoresistive stack with seed region and method of manufacturing...

Forced current access with voltage clamping in cross-point array

Magnetic field controlled transistor

Magnetic memory device

Forced current access with voltage clamping in cross-point array

Semiconductor device

Memory systems with vertical integration

Method of manufacturing magnetic tunnel junction and magnetic tunne...

Seed layer for multilayer magnetic materials

Magnetic memory device having a ferromagnetic element

Magnetic random access memory

Magnetic tunnel junction (MTJ) device and manufacturing method thereof

Magnetic device and magnetic random access memory

Semiconductor devices and methods of manufacturing

Semiconductor device and manufacturing method of semiconductor device

Method of forming memory cell

Magnetoresistive random access memory (MRAM) device

Spin orbit coupling memory device with top spin orbit coupling elec...

Metal etching stop layer in magnetic tunnel junction memory cells

Magnetic tunnel junction device and method

Magnetic junctions having enhanced tunnel magnetoresistance and uti...

Magnetic random access memory and manufacturing method thereof

Semiconductor device

Semiconductor device, magnetoresistive random access memory device,...

Structure and method for integrating MRAM and logic devices

Structure and method for MRAM devices having spacer element

Memory devices

Manufacturing techniques and corresponding devices for magnetic tun...

Patents Applicationslast 30 patents

MRAM DEVICE WITH OCTAGON PROFILE

MRAM DEVICE WITH WRAP-AROUND TOP ELECTRODE CONTACT

MAGNETIC MEMORY STRUCTURE

MRAM WITH A MULTI-COMPONENT, MULTI-LAYER BOTTOM ELECTRODE

MRAM DEVICE WITH HAMMERHEAD PROFILE

REACTIVE SERIAL RESISTANCE REDUCTION FOR MAGNETORESISTIVE RANDOM-AC...

MRAM DEVICE WITH WRAP-AROUND TOP ELECTRODE

MEMORY STRUCTURE WITH NON-ION BEAM ETCHED MTJ AND TOP ELECTRODE

MULTIPLE LAYERS OF VOID-FREE INTERLAYER DIELECTRIC BETWEEN ADJACENT...

Diamond Shaped Magnetic Random Access Memory

CIRCUIT ARCHITECTURE USING TRANSISTORS WITH DYNAMIC DUAL FUNCTIONAL...

FAST SWITCHING MRAM HAVING AN ALUMINUM-MANGANESE-GERMANIUM FREE LAY...

SWITCHABLE MAGNETIC DEVICE OR DOT FOR DATA STORAGE

MRAM DEVICE WITH OCTAGON PROFILE

TOP CONTACT STRUCTURE FOR EMBEDDED MRAM

MAGNETIC TUNNEL JUNCTION DEVICE

CHAMFERED MRAM DEVICE STRUCTURE

MRAM DEVICE STRUCTURE WITH IMPROVED TOP ELECTRODE

CoFeB Based Magnetic Tunnel Junction Device with Boron Encapsulatio...

BACKSIDE MRAM WITH FRONTSIDE DEVICES

SPIN-ORBIT-TORQUE (SOT) MRAM WITH DOUBLED LAYER OF SOT METAL

MAGNETORESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR FABRICATING TH...

Cobalt-Boron (CoB) Layer for Magnetic Recording Devices, Memory Dev...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

MRAM STRUCTURE WITH CHIRAL SPIN-ORBIT-TORQUE METAL ELECTRODE

SOT MRAM STRUCTURE AND FABRICATING METHOD OF THE SAME

Magnetoresistive Devices Comprising A Synthetic Antiferromagnetic C...

STACKED FET WITH THREE-TERMINAL SOT MRAM

MRAM DEVICE WITH ANNULAR ELECTRODES

MAGNETO RESISTIVE ELEMENT