including diodes only

Industry

CPC
H01L27/1021

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

Current Industry

H01L27/1021including diodes only

Industries

Patents Grantslast 30 patents

Information Patent Grant
Metal-insulator-semiconductor tunnel diode memory
- Patent number 11,855,099
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jenn-Gwo Hwu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile nanotube switch elements using sidewall contacts
- Patent number 11,177,261
- Issue date Nov 16, 2021
- Nantero, Inc.
- Claude L. Bertin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Arrays of cross-point memory structures
- Patent number 10,910,255
- Issue date Feb 2, 2021
- Micron Technology, Inc.
- Scott E. Sills
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile nanotube switches with reduced switching voltages and c...
- Patent number 10,885,978
- Issue date Jan 5, 2021
- Nantero, Inc.
- Claude L. Bertin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Manufacturing method of stacked multilayer structure
- Patent number 10,861,789
- Issue date Dec 8, 2020
- TOSHIBA MEMORY CORPORATION
- Makoto Mizukami
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Antifuse element using spacer breakdown
- Patent number 10,847,456
- Issue date Nov 24, 2020
- Intel Corporation
- Ting Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
One-time-programmable memory in a high-density three-dimensional st...
- Patent number 10,672,490
- Issue date Jun 2, 2020
- International Business Machines Corporation
- Alexander Reznicek
- G11 - INFORMATION STORAGE
Information Patent Grant
Arrays of cross-point memory structures, and methods of forming arr...
- Patent number 10,593,589
- Issue date Mar 17, 2020
- Micron Technology, Inc.
- Scott E. Sills
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having first and second electrode layers elect...
- Patent number 10,593,814
- Issue date Mar 17, 2020
- Rohm Co., Ltd.
- Hiroki Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double density nonvolatile nanotube switch memory cells
- Patent number 10,546,859
- Issue date Jan 28, 2020
- Nantero, Inc.
- Claude L. Bertin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Stacked multilayer structure and manufacturing method thereof
- Patent number 10,535,604
- Issue date Jan 14, 2020
- TOSHIBA MEMORY CORPORATION
- Makoto Mizukami
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Device comprising a plurality of diodes
- Patent number 10,475,849
- Issue date Nov 12, 2019
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Hubert Bono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming arrays of small, closely spaced features
- Patent number 10,396,281
- Issue date Aug 27, 2019
- Micron Technology, Inc.
- David H. Wells
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap three-dimensional cross rail memory device and method of ma...
- Patent number 10,381,366
- Issue date Aug 13, 2019
- SanDisk Technologies LLC
- Yuji Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device comprising a plurality of diodes
- Patent number 10,361,247
- Issue date Jul 23, 2019
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Hubert Bono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor-metal-on-insulator structures, methods of forming suc...
- Patent number 10,325,926
- Issue date Jun 18, 2019
- Micron Technology, Inc.
- Sanh D. Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compact three-dimensional memory with semi-conductive address line...
- Patent number 10,304,495
- Issue date May 28, 2019
- ChengDu HaiCun IP Technology LLC
- Guobiao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compact three-dimensional memory with an above-substrate decoding s...
- Patent number 10,304,553
- Issue date May 28, 2019
- HangZhou HaiCun Information Technology Co., Ltd
- Guobiao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device having self-aligned cell structure
- Patent number 10,276,635
- Issue date Apr 30, 2019
- Micron Technology, Inc.
- Jun Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Manufacturing methods of JFET-type compact three-dimensional memory
- Patent number 10,211,258
- Issue date Feb 19, 2019
- HangZhou HaiCun Information Technology Co., Ltd
- Guobiao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile nanotube switches and systems using same
- Patent number 10,204,682
- Issue date Feb 12, 2019
- Nantero, Inc.
- Claude L. Bertin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Manufacturing methods of MOSFET-type compact three-dimensional memory
- Patent number 10,199,432
- Issue date Feb 5, 2019
- HangZhou HaiCun Information Technology Co., Ltd
- Guobiao Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Manufacture of a tunnel diode memory
- Patent number 10,170,177
- Issue date Jan 1, 2019
- Laurence H. Cooke
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device having first and second electrode layers elect...
- Patent number 10,164,125
- Issue date Dec 25, 2018
- Rohm Co., Ltd.
- Hiroki Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Detector comprising a variable capacitance diode
- Patent number 10,147,824
- Issue date Dec 4, 2018
- Helmholtz-Zentrum Dresden-Rossendorf e.V.
- Heidemarie Schmidt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density nonvolatile memory cell unit array
- Patent number 10,115,669
- Issue date Oct 30, 2018
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Haruhiko Terada
- G11 - INFORMATION STORAGE
Information Patent Grant
Stacked three-dimensional arrays of two terminal nanotube switching...
- Patent number 10,096,601
- Issue date Oct 9, 2018
- Nantero, Inc.
- Claude L. Bertin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Compact three-dimensional mask-programmed read-only memory
- Patent number 10,079,239
- Issue date Sep 18, 2018
- HangZhou HaiCun Information Technology Co., Ltd
- Guobiao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solid state devices having fine pitch structures
- Patent number 10,008,542
- Issue date Jun 26, 2018
- HGST, INC.
- Daniel R. Shepard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Offset-printing method for three-dimensional package
- Patent number 9,990,961
- Issue date Jun 5, 2018
- ChengDu HaiCun IP Technology LLC
- Guobiao Zhang
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MEMORY DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20230238384
- Publication date Jul 27, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jenn-Gwo HWU
- G11 - INFORMATION STORAGE
Information Patent Application
Arrays of Cross-Point Memory Structures
- Publication number 20200185265
- Publication date Jun 11, 2020
- Micron Technology, Inc.
- Scott E. Sills
- G11 - INFORMATION STORAGE
Information Patent Application
MANUFACTURING METHOD OF STACKED MULTILAYER STRUCTURE
- Publication number 20200168546
- Publication date May 28, 2020
- Toshiba Memory Corporation
- Makoto Mizukami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nonvolatile Nanotube Switch Elements Using Sidewall Contacts
- Publication number 20200161304
- Publication date May 21, 2020
- Nantero, Inc.
- Claude L. BERTIN
- B82 - NANO-TECHNOLOGY
Information Patent Application
AIR GAP THREE-DIMENSIONAL CROSS RAIL MEMORY DEVICE AND METHOD OF MA...
- Publication number 20190259772
- Publication date Aug 22, 2019
- SanDisk Technologies LLC
- Yuji TAKAHASHI
- G11 - INFORMATION STORAGE
Information Patent Application
ONE-TIME-PROGRAMMABLE MEMORY IN A HIGH-DENSITY THREE-DIMENSIONAL ST...
- Publication number 20190221277
- Publication date Jul 18, 2019
- International Business Machines Corporation
- Alexander Reznicek
- G11 - INFORMATION STORAGE
Information Patent Application
Nonvolatile Nanotube Switches with Reduced Switching Voltages and C...
- Publication number 20190189208
- Publication date Jun 20, 2019
- Nantero, Inc.
- Claude L. Bertin
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICE HAVING FIRST AND SECOND ELECTRODE LAYERS ELECT...
- Publication number 20190115481
- Publication date Apr 18, 2019
- Rohm Co., Ltd.
- Hiroki Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Double Density Nonvolatile Nanotube Switch Memory Cells
- Publication number 20190051651
- Publication date Feb 14, 2019
- Nantero, Inc.
- Claude L. BERTIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED MULTILAYER STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20180301415
- Publication date Oct 18, 2018
- Toshiba Memory Corporation
- Makoto Mizukami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANTIFUSE ELEMENT USING SPACER BREAKDOWN
- Publication number 20180218977
- Publication date Aug 2, 2018
- Intel Corporation
- TING CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stacked Three-Dimensional Arrays of Two Terminal Nanotube Switching...
- Publication number 20180182759
- Publication date Jun 28, 2018
- Nantero, Inc.
- Claude L. BERTIN
- B82 - NANO-TECHNOLOGY
Information Patent Application
Nonvolatile Nanotube Switches and Systems Using Same
- Publication number 20180025779
- Publication date Jan 25, 2018
- Nantero, Inc.
- Claude L. Bertin
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor Constructions, Electronic Systems, and Methods of For...
- Publication number 20170271411
- Publication date Sep 21, 2017
- Micron Technology, Inc.
- Chandra Mouli
- G11 - INFORMATION STORAGE
Information Patent Application
Offset-Printing Method for Three-Dimensional Printed Memory with Mu...
- Publication number 20170098650
- Publication date Apr 6, 2017
- HANGZHOU HAICUN INFORMATION TECHNOLOGY CO., LTD.
- Guobiao ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Offset-Printing Method for Three-Dimensional Package
- Publication number 20170098651
- Publication date Apr 6, 2017
- CHENGDU HAICUN IP TECHNOLOGY LLC
- Guobiao ZHANG
- G11 - INFORMATION STORAGE
Information Patent Application
A NEGATIVE DIFFERENTIAL RESISTANCE BASED MEMORY
- Publication number 20170084326
- Publication date Mar 23, 2017
- Daniel H. Morris
- G11 - INFORMATION STORAGE
Information Patent Application
Offset-Printing Method for Three-Dimensional Printed Memory
- Publication number 20170084621
- Publication date Mar 23, 2017
- HANGZHOU HAICUN INFORMATION TECHNOLOGY CO., LTD.
- Guobiao ZHANG
- G11 - INFORMATION STORAGE
Information Patent Application
Three-Dimensional Offset-Printed Memory with Multiple Bits-Per-Cell
- Publication number 20170084348
- Publication date Mar 23, 2017
- HANGZHOU HAICUN INFORMATION TECHNOLOGY CO., LTD.
- Guobiao ZHANG
- G11 - INFORMATION STORAGE
Information Patent Application
ELECTROMECHANICAL NONVOLATILE MEMORY
- Publication number 20160260717
- Publication date Sep 8, 2016
- ZHENGHAO GAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHIP DIODE AND DIODE PACKAGE
- Publication number 20150249055
- Publication date Sep 3, 2015
- Rohm Co., Ltd.
- Hiroki Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING NONVOLATILE SEMICONDUCTOR STORAGE DEVICE A...
- Publication number 20140377932
- Publication date Dec 25, 2014
- KABUSHIKI KAISHA TOSHIBA
- Toshiharu TANAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED NON-VOLATILE MEMORY
- Publication number 20140335669
- Publication date Nov 13, 2014
- Daniel R. Shepard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL SWITCH THREE-DIMENSIONAL MEMORY ARRAY
- Publication number 20140321190
- Publication date Oct 30, 2014
- Daniel R. Shepard
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
- Publication number 20140313829
- Publication date Oct 23, 2014
- KABUSHIKI KAISHA TOSHIBA
- Hitoshi IWAI
- G11 - INFORMATION STORAGE
Information Patent Application
CHIP DIODE AND DIODE PACKAGE
- Publication number 20140284754
- Publication date Sep 25, 2014
- Rohm Co., Ltd.
- Hiroki Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THERMALLY ASSISTED FLASH MEMORY WITH DIODE STRAPPING
- Publication number 20140286097
- Publication date Sep 25, 2014
- Macronix International Co., Ltd.
- Hang-Ting Lue
- G11 - INFORMATION STORAGE
Information Patent Application
Arrays Of Nonvolatile Memory Cells And Methods Of Forming Arrays Of...
- Publication number 20140246645
- Publication date Sep 4, 2014
- Micron Technology, Inc.
- Jun Liu
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20140247651
- Publication date Sep 4, 2014
- Shuichi Tsukada
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL NONVOLATILE MEMORY AND METHOD OF FABRICATION
- Publication number 20140239248
- Publication date Aug 28, 2014
- SanDisk 3D LLC
- Mark G. Johnson
- G11 - INFORMATION STORAGE

including diodes only

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Metal-insulator-semiconductor tunnel diode memory

Nonvolatile nanotube switch elements using sidewall contacts

Arrays of cross-point memory structures

Nonvolatile nanotube switches with reduced switching voltages and c...

Manufacturing method of stacked multilayer structure

Antifuse element using spacer breakdown

One-time-programmable memory in a high-density three-dimensional st...

Arrays of cross-point memory structures, and methods of forming arr...

Semiconductor device having first and second electrode layers elect...

Double density nonvolatile nanotube switch memory cells

Stacked multilayer structure and manufacturing method thereof

Device comprising a plurality of diodes

Methods for forming arrays of small, closely spaced features

Air gap three-dimensional cross rail memory device and method of ma...

Device comprising a plurality of diodes

Semiconductor-metal-on-insulator structures, methods of forming suc...

Compact three-dimensional memory with semi-conductive address line...

Compact three-dimensional memory with an above-substrate decoding s...

Memory device having self-aligned cell structure

Manufacturing methods of JFET-type compact three-dimensional memory

Nonvolatile nanotube switches and systems using same

Manufacturing methods of MOSFET-type compact three-dimensional memory

Manufacture of a tunnel diode memory

Semiconductor device having first and second electrode layers elect...

Detector comprising a variable capacitance diode

High density nonvolatile memory cell unit array

Stacked three-dimensional arrays of two terminal nanotube switching...

Compact three-dimensional mask-programmed read-only memory

Solid state devices having fine pitch structures

Offset-printing method for three-dimensional package

Patents Applicationslast 30 patents

MEMORY DEVICE AND METHOD FOR FORMING THE SAME

Arrays of Cross-Point Memory Structures

MANUFACTURING METHOD OF STACKED MULTILAYER STRUCTURE

Nonvolatile Nanotube Switch Elements Using Sidewall Contacts

AIR GAP THREE-DIMENSIONAL CROSS RAIL MEMORY DEVICE AND METHOD OF MA...

ONE-TIME-PROGRAMMABLE MEMORY IN A HIGH-DENSITY THREE-DIMENSIONAL ST...

Nonvolatile Nanotube Switches with Reduced Switching Voltages and C...

SEMICONDUCTOR DEVICE HAVING FIRST AND SECOND ELECTRODE LAYERS ELECT...

Double Density Nonvolatile Nanotube Switch Memory Cells

STACKED MULTILAYER STRUCTURE AND MANUFACTURING METHOD THEREOF

ANTIFUSE ELEMENT USING SPACER BREAKDOWN

Stacked Three-Dimensional Arrays of Two Terminal Nanotube Switching...

Nonvolatile Nanotube Switches and Systems Using Same

Semiconductor Constructions, Electronic Systems, and Methods of For...

Offset-Printing Method for Three-Dimensional Printed Memory with Mu...

Offset-Printing Method for Three-Dimensional Package

A NEGATIVE DIFFERENTIAL RESISTANCE BASED MEMORY

Offset-Printing Method for Three-Dimensional Printed Memory

Three-Dimensional Offset-Printed Memory with Multiple Bits-Per-Cell

ELECTROMECHANICAL NONVOLATILE MEMORY

CHIP DIODE AND DIODE PACKAGE

METHOD FOR MANUFACTURING NONVOLATILE SEMICONDUCTOR STORAGE DEVICE A...

EMBEDDED NON-VOLATILE MEMORY

VERTICAL SWITCH THREE-DIMENSIONAL MEMORY ARRAY

NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

CHIP DIODE AND DIODE PACKAGE

THERMALLY ASSISTED FLASH MEMORY WITH DIODE STRAPPING

Arrays Of Nonvolatile Memory Cells And Methods Of Forming Arrays Of...

SEMICONDUCTOR DEVICE

THREE-DIMENSIONAL NONVOLATILE MEMORY AND METHOD OF FABRICATION