including field-effect components only

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H01L27/085

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

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H01L27/085including field-effect components only

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Nitride-based semiconductor device and method for manufacturing the...
- Patent number 12,125,847
- Issue date Oct 22, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qingyuan He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 12,094,963
- Issue date Sep 17, 2024
- Infineon Technologies Austria AG
- Oliver Haeberlen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated semiconductor device
- Patent number 12,074,093
- Issue date Aug 27, 2024
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Manabu Yanagihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having unit cell transistors with smoothed tu...
- Patent number 12,034,072
- Issue date Jul 9, 2024
- MACOM Technology Solutions Holdings, Inc.
- Yueying Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor apparatuses and methods involving diamond and GaN-bas...
- Patent number 11,961,837
- Issue date Apr 16, 2024
- The Board of Trustees of the Leland Stanford Junior University
- Srabanti Chowdhury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturable thin film gallium and nitrogen containing devices
- Patent number 11,955,521
- Issue date Apr 9, 2024
- KYOCERA SLD Laser, Inc.
- James W. Raring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturable thin film gallium and nitrogen containing devices
- Patent number 11,948,980
- Issue date Apr 2, 2024
- KYOCERA SLD Laser, Inc.
- James W. Raring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-dimensional (2D) metal structure
- Patent number 11,923,300
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Wei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage blocking III-V semiconductor device
- Patent number 11,923,448
- Issue date Mar 5, 2024
- Infineon Technologies Austria AG
- Hyeongnam Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 11,881,479
- Issue date Jan 23, 2024
- Rohm Co., Ltd.
- Hirotaka Otake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF switch device having a highly resistive substrate, an isolation...
- Patent number 11,830,908
- Issue date Nov 28, 2023
- DB HiTek, Co., Ltd.
- Jin Hyo Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic integration of diverse device types with shared electric...
- Patent number 11,784,189
- Issue date Oct 10, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Francois Hebert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an array of multi-stack nanosheet structures havi...
- Patent number 11,742,345
- Issue date Aug 29, 2023
- Samsung Electronics Co., Ltd.
- Inchan Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure
- Patent number 11,735,586
- Issue date Aug 22, 2023
- United Microelectronics Corp.
- Chang-Po Hsiung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-dimensional channel FET devices, systems, and methods of using...
- Patent number 11,732,296
- Issue date Aug 22, 2023
- Cardea Bio, Inc.
- Pieter van Rooyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices with well regions and methods for formin...
- Patent number 11,735,485
- Issue date Aug 22, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Feng Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices including a vertical field-effect transi...
- Patent number 11,735,659
- Issue date Aug 22, 2023
- Samsung Electronics Co., Ltd.
- Young Chai Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 11,721,692
- Issue date Aug 8, 2023
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Qiyue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structure for active devices
- Patent number 11,705,486
- Issue date Jul 18, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fu-Wei Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure and method of forming the same
- Patent number 11,652,102
- Issue date May 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kam-Tou Sio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor structure and method of fabricating the same
- Patent number 11,605,631
- Issue date Mar 14, 2023
- United Microelectronics Corp.
- Yung-Chen Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Distributed inductance integrated field effect transistor structure
- Patent number 11,574,854
- Issue date Feb 7, 2023
- National Research Council of Canada
- Nianhua (Frank) Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-finger devices with reduced parasitic capacitance
- Patent number 11,521,967
- Issue date Dec 6, 2022
- STMICROELECTRONICS INTERNATIONAL N.V.
- Vishal Kumar Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,476,325
- Issue date Oct 18, 2022
- Jin Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial structure of N-face group III nitride, active device, and...
- Patent number 11,469,308
- Issue date Oct 11, 2022
- Chih-Shu Huang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Array of multi-stack nanosheet structures
- Patent number 11,437,369
- Issue date Sep 6, 2022
- Samsung Electronics Co., Ltd.
- Inchan Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with an auxiliary gate structure
- Patent number 11,404,565
- Issue date Aug 2, 2022
- Cambridge Enterprise Limited
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with a series connection of two devices
- Patent number 11,336,279
- Issue date May 17, 2022
- Cambridge Enterprise Limited
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 11,302,690
- Issue date Apr 12, 2022
- Rohm Co., Ltd.
- Hirotaka Otake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superjunction transistor arrangement and method of producing thereof
- Patent number 11,245,002
- Issue date Feb 8, 2022
- Infineon Technologies Dresden GmbH & Co. KG
- Rolf Weis
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE, SEMICONDUCTOR MODULE, AND WIRELESS COMMUNICAT...
- Publication number 20240322028
- Publication date Sep 26, 2024
- Sony Semiconductor Solutions Corporation
- KATSUJI MATSUMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLIP-CHIP FIELD EFFECT TRANSISTOR LAYOUTS AND STRUCTURES
- Publication number 20240266348
- Publication date Aug 8, 2024
- Wolfspeed, Inc.
- Fabian Radulescu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Layout pattern of semiconductor cell and forming method thereof
- Publication number 20240222355
- Publication date Jul 4, 2024
- UNITED MICROELECTRONICS CORP.
- Ching-Wen Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL SOURCE OR DRAIN REGION WITH A WRAPPED CONDUCTIVE CONTACT
- Publication number 20240204048
- Publication date Jun 20, 2024
- Intel Corporation
- Hwichan Jun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20240128263
- Publication date Apr 18, 2024
- Rohm Co., Ltd.
- Hirotaka Otake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240120396
- Publication date Apr 11, 2024
- Sumitomo Electric Industries, Ltd.
- Taizo TATSUMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FULL WAFER DEVICE WITH MULTIPLE DIRECTIONAL INDICATORS
- Publication number 20240071955
- Publication date Feb 29, 2024
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...
- Publication number 20240063218
- Publication date Feb 22, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qingyuan HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-DIMENSIONAL (2D) METAL STRUCTURE
- Publication number 20240063119
- Publication date Feb 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Wei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR IC CHIP AND METHOD FOR MANUFACTURING TH...
- Publication number 20240047451
- Publication date Feb 8, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Hui YAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING III-N MATERIAL-BASED VERTICAL COMPONENTS
- Publication number 20240047201
- Publication date Feb 8, 2024
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Guy FEUILLET
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIRST METAL STRUCTURE, LAYOUT, AND METHOD
- Publication number 20230387011
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Yu LU
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Circuit cell for a standard cell semiconductor device
- Publication number 20230361205
- Publication date Nov 9, 2023
- IMEC vzw
- Boon Teik Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHIC INTEGRATION OF DIVERSE DEVICE TYPES WITH SHARED ELECTRIC...
- Publication number 20230361127
- Publication date Nov 9, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Francois Hebert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20230352478
- Publication date Nov 2, 2023
- UNITED MICROELECTRONICS CORP.
- Chang-Po Hsiung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIZE-EFFICIENT MITIGATION OF LATCHUP AND LATCHUP PROPAGATION
- Publication number 20230317722
- Publication date Oct 5, 2023
- International Business Machines Corporation
- Terence Hook
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURE FOR ACTIVE DEVICES
- Publication number 20230299133
- Publication date Sep 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fu-Wei Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20230282639
- Publication date Sep 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kam-Tou SIO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH LOW PINCH-OFF VOLTAGE AND METHODS FOR MAN...
- Publication number 20230261116
- Publication date Aug 17, 2023
- Chengdu Monolithic Power Systems Co., Ltd.
- Daping Fu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF COMPOUND-SEMICONDUCTOR-BASED DEVICES AND SILICON-BAS...
- Publication number 20230223254
- Publication date Jul 13, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Ramsey Hazbun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIABLE WIDTH FOR RF NEIGHBORING STACKS
- Publication number 20230142322
- Publication date May 11, 2023
- pSemi Corporation
- Shashi SAMAL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE WITH AN AUXILIARY GATE STRUCTURE
- Publication number 20230131602
- Publication date Apr 27, 2023
- CAMBRIDGE ENTERPRISE LIMITED
- Martin ARNOLD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230095367
- Publication date Mar 30, 2023
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qiyue ZHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RF SWITCH DEVICE AND METHOD OF MANUFACTURING SAME
- Publication number 20230057074
- Publication date Feb 23, 2023
- DB HiTek Co., Ltd.
- Jin Hyo JUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-DIMENSIONAL (2D) METAL STRUCTURE
- Publication number 20230008779
- Publication date Jan 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Wei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ARRAY OF MULTI-STACK NANOSHEET STRUCTURES
- Publication number 20220359500
- Publication date Nov 10, 2022
- Samsung Electronics Co., Ltd.
- Inchan HWANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE, SEMICONDUCTOR STRUCTURE AND FABRICATION METHO...
- Publication number 20220352361
- Publication date Nov 3, 2022
- Changxin Memory Technologies, Inc.
- Hui XUE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Quantum Structure Getter for Radiation Hardened Transistors
- Publication number 20220285499
- Publication date Sep 8, 2022
- The United States of America, as represented by the Secretary of the Navy
- Timothy Allen Morgan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR APPARATUSES AND METHODS INVOLVING DIAMOND AND GaN-BAS...
- Publication number 20220223586
- Publication date Jul 14, 2022
- The Board of Trustees of the Leland Stanford Junior University
- Srabanti Chowdhury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20220208760
- Publication date Jun 30, 2022
- UNITED MICROELECTRONICS CORP.
- Chang-Po Hsiung
- H01 - BASIC ELECTRIC ELEMENTS

including field-effect components only

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Nitride-based semiconductor device and method for manufacturing the...

Nitride semiconductor device

Integrated semiconductor device

Semiconductor devices having unit cell transistors with smoothed tu...

Semiconductor apparatuses and methods involving diamond and GaN-bas...

Manufacturable thin film gallium and nitrogen containing devices

Manufacturable thin film gallium and nitrogen containing devices

Two-dimensional (2D) metal structure

High voltage blocking III-V semiconductor device

Nitride semiconductor device

RF switch device having a highly resistive substrate, an isolation...

Monolithic integration of diverse device types with shared electric...

Method of forming an array of multi-stack nanosheet structures havi...

Semiconductor structure

Two-dimensional channel FET devices, systems, and methods of using...

Integrated circuit devices with well regions and methods for formin...

Integrated circuit devices including a vertical field-effect transi...

Semiconductor device and fabrication method thereof

Isolation structure for active devices

Integrated circuit structure and method of forming the same

3D semiconductor structure and method of fabricating the same

Distributed inductance integrated field effect transistor structure

Multi-finger devices with reduced parasitic capacitance

Semiconductor device

Epitaxial structure of N-face group III nitride, active device, and...

Array of multi-stack nanosheet structures

Power semiconductor device with an auxiliary gate structure

Power semiconductor device with a series connection of two devices

Nitride semiconductor device

Superjunction transistor arrangement and method of producing thereof

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE, SEMICONDUCTOR MODULE, AND WIRELESS COMMUNICAT...

FLIP-CHIP FIELD EFFECT TRANSISTOR LAYOUTS AND STRUCTURES

Layout pattern of semiconductor cell and forming method thereof

EPITAXIAL SOURCE OR DRAIN REGION WITH A WRAPPED CONDUCTIVE CONTACT

NITRIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

FULL WAFER DEVICE WITH MULTIPLE DIRECTIONAL INDICATORS

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...

TWO-DIMENSIONAL (2D) METAL STRUCTURE

NITRIDE-BASED SEMICONDUCTOR IC CHIP AND METHOD FOR MANUFACTURING TH...

METHOD FOR PRODUCING III-N MATERIAL-BASED VERTICAL COMPONENTS

FIRST METAL STRUCTURE, LAYOUT, AND METHOD

Circuit cell for a standard cell semiconductor device

MONOLITHIC INTEGRATION OF DIVERSE DEVICE TYPES WITH SHARED ELECTRIC...

SEMICONDUCTOR STRUCTURE

SIZE-EFFICIENT MITIGATION OF LATCHUP AND LATCHUP PROPAGATION

ISOLATION STRUCTURE FOR ACTIVE DEVICES

INTEGRATED CIRCUIT STRUCTURE AND METHOD OF FORMING THE SAME

SEMICONDUCTOR DEVICE WITH LOW PINCH-OFF VOLTAGE AND METHODS FOR MAN...

INTEGRATION OF COMPOUND-SEMICONDUCTOR-BASED DEVICES AND SILICON-BAS...

VARIABLE WIDTH FOR RF NEIGHBORING STACKS

POWER SEMICONDUCTOR DEVICE WITH AN AUXILIARY GATE STRUCTURE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

RF SWITCH DEVICE AND METHOD OF MANUFACTURING SAME

TWO-DIMENSIONAL (2D) METAL STRUCTURE

ARRAY OF MULTI-STACK NANOSHEET STRUCTURES

TRANSISTOR STRUCTURE, SEMICONDUCTOR STRUCTURE AND FABRICATION METHO...

Quantum Structure Getter for Radiation Hardened Transistors

SEMICONDUCTOR APPARATUSES AND METHODS INVOLVING DIAMOND AND GaN-BAS...

SEMICONDUCTOR STRUCTURE