including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body

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H01L27/0924

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

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H01L27/0924including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Integrated circuit devices and fabrication techniques
- Patent number 12,211,853
- Issue date Jan 28, 2025
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a doped fin well
- Patent number 12,211,901
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bau-Ming Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC including standard cells and SRAM cells
- Patent number 12,213,296
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhon-Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device and method of forming same
- Patent number 12,211,752
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing FinFETs by fin-recessing processes to form...
- Patent number 12,211,842
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,211,846
- Issue date Jan 28, 2025
- Samsung Electronics Co., Ltd.
- Sung Soo Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including standard cells
- Patent number 12,211,851
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ta-Pen Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fins for metal oxide semiconductor device structures
- Patent number 12,205,955
- Issue date Jan 21, 2025
- Intel Corporation
- Martin D. Giles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device for forming metal gate electrodes for transistors
- Patent number 12,205,819
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Huan-Chieh Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit device
- Patent number 12,205,953
- Issue date Jan 21, 2025
- SOCIONEXT INC.
- Toshio Hino
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device structure with source/drain structure and meth...
- Patent number 12,205,849
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ta-Chun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having interconnection lines with different li...
- Patent number 12,199,042
- Issue date Jan 14, 2025
- Samsung Electronics Co., Ltd.
- Wonhyuk Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and method of manufacturing the same
- Patent number 12,199,099
- Issue date Jan 14, 2025
- Samsung Electronics Co., Ltd.
- Jung-Gil Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate device integration with separated fin-like field effect...
- Patent number 12,199,100
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact formation with reduced dopant loss and increased dimensions
- Patent number 12,199,156
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate line plug structures for advanced integrated circuit structure...
- Patent number 12,199,167
- Issue date Jan 14, 2025
- Intel Corporation
- Byron Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned gate endcap (SAGE) architecture having gate contacts
- Patent number 12,199,101
- Issue date Jan 14, 2025
- Intel Corporation
- Sairam Subramanian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,199,040
- Issue date Jan 14, 2025
- Samsung Electronics Co., Ltd.
- Hyeongyu You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and formation method of semiconductor device structure wi...
- Patent number 12,199,169
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chao-Ching Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Flip-flop with transistors having different threshold voltages, sem...
- Patent number 12,199,612
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Xing Chao Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plugs for interconnect lines for advanced integrated circuit struct...
- Patent number 12,199,168
- Issue date Jan 14, 2025
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual channel gate all around transistor device and fabrication meth...
- Patent number 12,198,986
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Sheng Yun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin doping and integrated circuit structures resulting therefrom
- Patent number 12,199,098
- Issue date Jan 14, 2025
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method for forming the same
- Patent number 12,200,921
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Wen Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor device having bit line comprisi...
- Patent number 12,200,923
- Issue date Jan 14, 2025
- Fujian Jinhua Integrated Circuit Co., Ltd.
- Janbo Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor method and device
- Patent number 12,191,212
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Cheng Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,191,144
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Yi Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,191,345
- Issue date Jan 7, 2025
- SOCIONEXT INC.
- Isaya Sobue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-planar semiconductor device having doped sub-fin region and met...
- Patent number 12,191,308
- Issue date Jan 7, 2025
- Tahoe Research, LTD.
- Tahir Ghani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing off-state leakage in semiconductor devices
- Patent number 12,191,349
- Issue date Jan 7, 2025
- Intel Corporation
- Dipanjan Basu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING THROUGH-STACK THERMAL SINK FOR...
- Publication number 20250029892
- Publication date Jan 23, 2025
- Intel Corporation
- Conor P. PULS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BARRIER LAYERS IN SEMICONDUCTOR DEVICES
- Publication number 20250031399
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mu-Min Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHODS OF FORMATION
- Publication number 20250031404
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Min-Hsuan LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT PLUG STRUCTURES OF SEMICONDUCTOR DEVICE AND METHODS OF FORM...
- Publication number 20250031403
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Hao Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUITS DESIGNED AND MANUFACTURED WITH FIRST AND SECOND DESIGN RULES
- Publication number 20250031443
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Hui Chen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
CELL ARCHITECTURE OF SEMICONDUCTOR DEVICE INCLUDING SEMICONDUCTOR C...
- Publication number 20250031456
- Publication date Jan 23, 2025
- Samsung Electronics Co., Ltd.
- Jintae KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION BETWEEN DEVICE AREAS
- Publication number 20250022746
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu-Ging Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURE HAVING GATE CONTACTS
- Publication number 20250022881
- Publication date Jan 16, 2025
- Intel Corporation
- Sairam Subramanian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH REDUCED CAP
- Publication number 20250022936
- Publication date Jan 16, 2025
- Intel Corporation
- Seung Hoon SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH IMPROVED GATE CONTROL
- Publication number 20250022940
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Che-Chun LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...
- Publication number 20250022939
- Publication date Jan 16, 2025
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED PATTERNING LAYER FOR METAL GATE FORMATION
- Publication number 20250014947
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kenichi Sano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-GATE DEVICE AND RELATED METHODS
- Publication number 20250015167
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Yi LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250014948
- Publication date Jan 9, 2025
- UNITED MICROELECTRONICS CORP.
- Fu-Jung Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING REDUCED END CAP
- Publication number 20250006787
- Publication date Jan 2, 2025
- Intel Corporation
- Leonard P. GULER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-TYPE TRANSISTOR FABRICATION IN COMPLEMENTARY FET (CFET) DEVICES
- Publication number 20250006812
- Publication date Jan 2, 2025
- Intel Corporation
- Sudipto Naskar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH CONDUCTIVITY TRANSISTOR CONTACTS COMPRISING GALLIUM ENRICHED L...
- Publication number 20250006806
- Publication date Jan 2, 2025
- Intel Corporation
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20250006500
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ya-Lan Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES WITH DIFFERENTIAL EPITAXIAL SOURCE OR...
- Publication number 20250006733
- Publication date Jan 2, 2025
- Intel Corporation
- Swapnadip GHOSH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED DEVICE WITH NITROGEN-CONTAINING INTERFACIAL LAYER AND MANUF...
- Publication number 20250006816
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Hsiang LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240429308
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Chih KAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USER MODEL-BASED DATA LOSS PREVENTION
- Publication number 20240430308
- Publication date Dec 26, 2024
- ARMORBLOX LLC
- Chetan Anand
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING...
- Publication number 20240429238
- Publication date Dec 26, 2024
- Intel Corporation
- Dan S. LAVRIC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual-Thickness Active Area Architecture for SOI FETS
- Publication number 20240429239
- Publication date Dec 26, 2024
- pSemi Corporation
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING BACKSIDE WIRING AND METHOD OF DESIGNIN...
- Publication number 20240429168
- Publication date Dec 26, 2024
- Samsung Electronics Co., Ltd.
- Dalhee LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL (3D) FIELD EFFECT TRANSISTORS (FETS) WITH GATE CU...
- Publication number 20240421157
- Publication date Dec 19, 2024
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-BASED FIELD EFFECT TRANSISTOR (FET) SOURCE/DRAIN STRAIN TO ENHA...
- Publication number 20240421214
- Publication date Dec 19, 2024
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduction of Air Gaps in FinFET Structures
- Publication number 20240420998
- Publication date Dec 19, 2024
- Applied Material, Inc.
- Joni Oskari Raisanen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING SEMICONDUCTOR DEVICE AND DIELECTRIC FIN
- Publication number 20240421004
- Publication date Dec 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Hao Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device With Isolation Structure
- Publication number 20240413150
- Publication date Dec 12, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY , LTD.
- Chieh-Ping Wang
- H01 - BASIC ELECTRIC ELEMENTS

including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Integrated circuit devices and fabrication techniques

Semiconductor device having a doped fin well

IC including standard cells and SRAM cells

FinFET device and method of forming same

Method for manufacturing FinFETs by fin-recessing processes to form...

Semiconductor device

Semiconductor device including standard cells

Fins for metal oxide semiconductor device structures

Method and device for forming metal gate electrodes for transistors

Semiconductor integrated circuit device

Semiconductor device structure with source/drain structure and meth...

Semiconductor device having interconnection lines with different li...

Semiconductor devices and method of manufacturing the same

Multi-gate device integration with separated fin-like field effect...

Contact formation with reduced dopant loss and increased dimensions

Gate line plug structures for advanced integrated circuit structure...

Self-aligned gate endcap (SAGE) architecture having gate contacts

Semiconductor device

Structure and formation method of semiconductor device structure wi...

Flip-flop with transistors having different threshold voltages, sem...

Plugs for interconnect lines for advanced integrated circuit struct...

Dual channel gate all around transistor device and fabrication meth...

Fin doping and integrated circuit structures resulting therefrom

Memory device and method for forming the same

Method of fabricating semiconductor device having bit line comprisi...

Semiconductor method and device

Semiconductor device and manufacturing method thereof

Semiconductor device

Non-planar semiconductor device having doped sub-fin region and met...

Reducing off-state leakage in semiconductor devices

Patents Applicationslast 30 patents

INTEGRATED CIRCUIT STRUCTURES HAVING THROUGH-STACK THERMAL SINK FOR...

BARRIER LAYERS IN SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE AND METHODS OF FORMATION

CONTACT PLUG STRUCTURES OF SEMICONDUCTOR DEVICE AND METHODS OF FORM...

CIRCUITS DESIGNED AND MANUFACTURED WITH FIRST AND SECOND DESIGN RULES

CELL ARCHITECTURE OF SEMICONDUCTOR DEVICE INCLUDING SEMICONDUCTOR C...

ISOLATION BETWEEN DEVICE AREAS

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURE HAVING GATE CONTACTS

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH REDUCED CAP

SEMICONDUCTOR DEVICES WITH IMPROVED GATE CONTROL

CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...

SELF-ALIGNED PATTERNING LAYER FOR METAL GATE FORMATION

MULTI-GATE DEVICE AND RELATED METHODS

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

INTEGRATED CIRCUIT STRUCTURES HAVING REDUCED END CAP

N-TYPE TRANSISTOR FABRICATION IN COMPLEMENTARY FET (CFET) DEVICES

HIGH CONDUCTIVITY TRANSISTOR CONTACTS COMPRISING GALLIUM ENRICHED L...

SEMICONDUCTOR DEVICE AND METHOD

INTEGRATED CIRCUIT STRUCTURES WITH DIFFERENTIAL EPITAXIAL SOURCE OR...

STACKED DEVICE WITH NITROGEN-CONTAINING INTERFACIAL LAYER AND MANUF...

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

USER MODEL-BASED DATA LOSS PREVENTION

FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING...

Dual-Thickness Active Area Architecture for SOI FETS

INTEGRATED CIRCUIT INCLUDING BACKSIDE WIRING AND METHOD OF DESIGNIN...

THREE-DIMENSIONAL (3D) FIELD EFFECT TRANSISTORS (FETS) WITH GATE CU...

FIN-BASED FIELD EFFECT TRANSISTOR (FET) SOURCE/DRAIN STRAIN TO ENHA...

Reduction of Air Gaps in FinFET Structures

METHODS OF FORMING SEMICONDUCTOR DEVICE AND DIELECTRIC FIN

Semiconductor Device With Isolation Structure