insulating part of the electrode is defined by a sidewall spacer

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/28141insulating part of the electrode is defined by a sidewall spacer

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Patents Grantslast 30 patents

Information Patent Grant
Replacement gate methods that include treating spacers to widen gate
- Patent number 11,908,695
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu-Han Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partial self-aligned contact for MOL
- Patent number 11,887,890
- Issue date Jan 30, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET device structure with air-gaps in spacer and methods for for...
- Patent number 11,855,170
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Gulbagh Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including gate spacer
- Patent number 11,810,964
- Issue date Nov 7, 2023
- Samsung Electronics Co., Ltd.
- Bongseok Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of semiconductor integrated circuit fabrication
- Patent number 11,735,477
- Issue date Aug 22, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming-Feng Shieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with gate dielectric formed using selective de...
- Patent number 11,699,739
- Issue date Jul 11, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tung-Ying Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and hybrid spacer thereof
- Patent number 11,626,412
- Issue date Apr 11, 2023
- Yangtze Memory Technologies Co., Ltd.
- Liheng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective high-k formation in gate-last process
- Patent number 11,508,583
- Issue date Nov 22, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yasutoshi Okuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device by a replacement gate process
- Patent number 11,482,421
- Issue date Oct 25, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and hybrid spacer thereof
- Patent number 11,469,240
- Issue date Oct 11, 2022
- Yangtze Memory Technologies Co., Ltd.
- Liheng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 11,443,956
- Issue date Sep 13, 2022
- Sumitomo Electric Industries, Ltd.
- Tadashi Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET device structure with air-gaps in spacer and methods for for...
- Patent number 11,367,778
- Issue date Jun 21, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Gulbagh Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including active regions in RAM areas with de...
- Patent number 11,257,672
- Issue date Feb 22, 2022
- GLOBALFOUNDRIES U.S. INC.
- Nan Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,245,024
- Issue date Feb 8, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tung-Ying Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partial self-aligned contact for MOL
- Patent number 11,239,115
- Issue date Feb 1, 2022
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with fine patterns and method for fo...
- Patent number 11,232,952
- Issue date Jan 25, 2022
- NANYA TECHNOLOGY CORPORATION
- Yi-Hsien Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of reducing parasitic capacitance in multi-gate field-effec...
- Patent number 11,189,705
- Issue date Nov 30, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- I-Hsieh Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory semiconductor device with electrostatic dischar...
- Patent number 11,133,188
- Issue date Sep 28, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Ling Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement gate methods that include treating spacers to widen gate
- Patent number 11,069,531
- Issue date Jul 20, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu-Han Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-planar field effect transistor devices with low-resistance meta...
- Patent number 11,049,935
- Issue date Jun 29, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-planar field effect transistor devices with low-resistance meta...
- Patent number 11,038,015
- Issue date Jun 15, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical fin field effect transistor with air gap spacers
- Patent number 11,024,709
- Issue date Jun 1, 2021
- International Business Machines Corporation
- Hari V. Mallela
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective high-K formation in gate-last process
- Patent number 10,964,542
- Issue date Mar 30, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yasutoshi Okuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device with various pass voltages
- Patent number 10,937,655
- Issue date Mar 2, 2021
- SK hynix Inc.
- Hee Youl Lee
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor devices and methods of manufacturing the same
- Patent number 10,930,509
- Issue date Feb 23, 2021
- Samsung Electronics Co., Ltd.
- Ju Youn Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming gate
- Patent number 10,916,636
- Issue date Feb 9, 2021
- United Microelectronics Corp.
- Po-Tsang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Faceted epitaxial source/drain regions
- Patent number 10,756,184
- Issue date Aug 25, 2020
- GLOBALFOUNDRIES Inc.
- George R. Mulfinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of semiconductor integrated circuit fabrication
- Patent number 10,672,656
- Issue date Jun 2, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Feng Shieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical fin field effect transistor with air gap spacers
- Patent number 10,644,104
- Issue date May 5, 2020
- International Business Machines Corporation
- Hari V. Mallela
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure including low-K spacer material
- Patent number 10,629,743
- Issue date Apr 21, 2020
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240371644
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE DIRECT CONTACT FORMATION
- Publication number 20240194528
- Publication date Jun 13, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240162080
- Publication date May 16, 2024
- RENESAS ELECTRONICS CORPORATION
- Kiyoshi ENDO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE CONTACT METAL FILL
- Publication number 20240153875
- Publication date May 9, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Replacement Gate Methods That Include Treating Spacers to Widen Gate
- Publication number 20240145250
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shu-Han Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET DEVICE STRUCTURE WITH AIR-GAPS IN SPACER AND METHODS FOR FOR...
- Publication number 20240079471
- Publication date Mar 7, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Gulbagh Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF GATE STRUCTURE
- Publication number 20240063052
- Publication date Feb 22, 2024
- UNITED MICROELECTRONICS CORP.
- Tzu-Feng Weng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH GATE DIELECTRIC FORMED USING SELECTIVE DE...
- Publication number 20230317820
- Publication date Oct 5, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tung-Ying LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective High-K Formation in Gate-Last Process
- Publication number 20230077541
- Publication date Mar 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yasutoshi Okuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Field-Effect Transistor Device and Method of Forming the Same
- Publication number 20220359207
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET DEVICE STRUCTURE WITH AIR-GAPS IN SPACER AND METHODS FOR FOR...
- Publication number 20220271141
- Publication date Aug 25, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Gulbagh Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH GATE DIELECTRIC FORMED USING SELECTIVE DE...
- Publication number 20220149177
- Publication date May 12, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tung-Ying LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Partial Self-Aligned Contact for MOL
- Publication number 20220108923
- Publication date Apr 7, 2022
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND HYBRID SPACER THEREOF
- Publication number 20220093622
- Publication date Mar 24, 2022
- Yangtze Memory Technologies Co., Ltd.
- Liheng LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Replacement Gate Methods That Include Treating Spacers to Widen Gate
- Publication number 20210343533
- Publication date Nov 4, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shu-Han Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20210320185
- Publication date Oct 14, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tung-Ying LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET DEVICE STRUCTURE WITH AIR-GAPS IN SPACER AND METHODS FOR FOR...
- Publication number 20210305396
- Publication date Sep 30, 2021
- Taiwan Semiconductor Manufacturing Company Limited
- Gulbagh Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH FINE PATTERNS AND METHOD FOR FO...
- Publication number 20210280425
- Publication date Sep 9, 2021
- NANYA TECHNOLOGY CORPORATION
- YI-HSIEN CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective High-K Formation in Gate-Last Process
- Publication number 20210225654
- Publication date Jul 22, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yasutoshi Okuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND HYBRID SPACER THEREOF
- Publication number 20210159236
- Publication date May 27, 2021
- Yangtze Memory Technologies Co., Ltd.
- Liheng LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Partial Self-Aligned Contact for MOL
- Publication number 20210134671
- Publication date May 6, 2021
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20210125833
- Publication date Apr 29, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Reducing Parasitic Capacitance in Multi-Gate Field-Effec...
- Publication number 20210036122
- Publication date Feb 4, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- I-Hsieh Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Semiconductor Integrated Circuit Fabrication
- Publication number 20200286782
- Publication date Sep 10, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Feng Shieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING GATE
- Publication number 20200266285
- Publication date Aug 20, 2020
- UNITED MICROELECTRONICS CORP.
- Po-Tsang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20200194266
- Publication date Jun 18, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Ling HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FACETED EPITAXIAL SOURCE/DRAIN REGIONS
- Publication number 20200144365
- Publication date May 7, 2020
- GLOBALFOUNDRIES INC.
- George R. MULFINGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Forming
- Publication number 20200135474
- Publication date Apr 30, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shu-Han Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-PLANAR FIELD EFFECT TRANSISTOR DEVICES WITH LOW-RESISTANCE META...
- Publication number 20200075717
- Publication date Mar 5, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-PLANAR FIELD EFFECT TRANSISTOR DEVICES WITH LOW-RESISTANCE META...
- Publication number 20200075720
- Publication date Mar 5, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS

insulating part of the electrode is defined by a sidewall spacer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Replacement gate methods that include treating spacers to widen gate

Partial self-aligned contact for MOL

MOSFET device structure with air-gaps in spacer and methods for for...

Semiconductor devices including gate spacer

Method of semiconductor integrated circuit fabrication

Semiconductor device with gate dielectric formed using selective de...

Memory device and hybrid spacer thereof

Selective high-k formation in gate-last process

Method of forming a semiconductor device by a replacement gate process

Memory device and hybrid spacer thereof

Method for manufacturing semiconductor device

MOSFET device structure with air-gaps in spacer and methods for for...

Semiconductor devices including active regions in RAM areas with de...

Semiconductor device and manufacturing method thereof

Partial self-aligned contact for MOL

Semiconductor device structure with fine patterns and method for fo...

Methods of reducing parasitic capacitance in multi-gate field-effec...

Non-volatile memory semiconductor device with electrostatic dischar...

Replacement gate methods that include treating spacers to widen gate

Non-planar field effect transistor devices with low-resistance meta...

Non-planar field effect transistor devices with low-resistance meta...

Vertical fin field effect transistor with air gap spacers

Selective high-K formation in gate-last process

Memory device with various pass voltages

Semiconductor devices and methods of manufacturing the same

Method of forming gate

Faceted epitaxial source/drain regions

Method of semiconductor integrated circuit fabrication

Vertical fin field effect transistor with air gap spacers

Semiconductor structure including low-K spacer material

Patents Applicationslast 30 patents

FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME

BACKSIDE DIRECT CONTACT FORMATION

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

BACKSIDE CONTACT METAL FILL

Replacement Gate Methods That Include Treating Spacers to Widen Gate

MOSFET DEVICE STRUCTURE WITH AIR-GAPS IN SPACER AND METHODS FOR FOR...

MANUFACTURING METHOD OF GATE STRUCTURE

SEMICONDUCTOR DEVICE WITH GATE DIELECTRIC FORMED USING SELECTIVE DE...

Selective High-K Formation in Gate-Last Process

Fin Field-Effect Transistor Device and Method of Forming the Same

MOSFET DEVICE STRUCTURE WITH AIR-GAPS IN SPACER AND METHODS FOR FOR...

SEMICONDUCTOR DEVICE WITH GATE DIELECTRIC FORMED USING SELECTIVE DE...

Partial Self-Aligned Contact for MOL

MEMORY DEVICE AND HYBRID SPACER THEREOF

Replacement Gate Methods That Include Treating Spacers to Widen Gate

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

MOSFET DEVICE STRUCTURE WITH AIR-GAPS IN SPACER AND METHODS FOR FOR...

SEMICONDUCTOR DEVICE STRUCTURE WITH FINE PATTERNS AND METHOD FOR FO...

Selective High-K Formation in Gate-Last Process

MEMORY DEVICE AND HYBRID SPACER THEREOF

Partial Self-Aligned Contact for MOL

FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME

Methods of Reducing Parasitic Capacitance in Multi-Gate Field-Effec...

Method of Semiconductor Integrated Circuit Fabrication

METHOD OF FORMING GATE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

FACETED EPITAXIAL SOURCE/DRAIN REGIONS

Semiconductor Device and Method of Forming

NON-PLANAR FIELD EFFECT TRANSISTOR DEVICES WITH LOW-RESISTANCE META...

NON-PLANAR FIELD EFFECT TRANSISTOR DEVICES WITH LOW-RESISTANCE META...