Insulators

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CPC
Y10S148/081

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

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Y10S148/081Insulators

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Patents Grantslast 30 patents

Information Patent Grant
Insulating material, substrate covered with an insulating film, met...
- Patent number 6,307,225
- Issue date Oct 23, 2001
- Sharp Kabushiki Kaisha
- Takeshi Kijima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a porous insulation film
- Patent number 6,218,318
- Issue date Apr 17, 2001
- Fujitsu Limited
- Yoshiyuki Ohkura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for plugging defects in a dielectric layer of a semiconduct...
- Patent number 5,208,189
- Issue date May 4, 1993
- Motorola, Inc.
- Bich-Yen Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for semiconductor device passivation
- Patent number 5,125,136
- Issue date Jun 30, 1992
- Motorola, Inc.
- Fred Y. Cho
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Compound semiconductor interface control using cationic ingredient...
- Patent number 5,021,365
- Issue date Jun 4, 1991
- International Business Machines Corporation
- Peter D. Kirchner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a buried crescent laser with air gap insulator
- Patent number 4,929,571
- Issue date May 29, 1990
- Mitsubishi Denki Kabushiki Kaisha
- Etsuji Omura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single crystal films of cubic group II fluorides on semiconductor c...
- Patent number 4,878,956
- Issue date Nov 7, 1989
- American Telephone and Telegraph Company AT&T Bell Laboratories
- Wilbur D. Johnston
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planarization process
- Patent number 4,879,257
- Issue date Nov 7, 1989
- LSI Logic Corporation
- Roger Patrick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating single crystal films of cubic group II fluori...
- Patent number 4,870,032
- Issue date Sep 26, 1989
- American Telephone and Telegraph Company, AT&T Bell Laboratories
- Wilbur D. Johnston
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making silicon on insalator material using oxygen implant...
- Patent number 4,863,878
- Issue date Sep 5, 1989
- Texas Instruments Incorporated
- Larry R. Hite
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Native oxide reduction for sealing nitride deposition
- Patent number 4,855,258
- Issue date Aug 8, 1989
- NCR Corporation
- Derryl D. J. Allman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an improved gate dielectric for a MOSFET on an in...
- Patent number 4,758,529
- Issue date Jul 19, 1988
- RCA Corporation
- Alfred C. Ipri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor devices
- Patent number 4,665,608
- Issue date May 19, 1987
- Mitsubishi Denki Kabushiki Kaisha
- Tatsuo Okamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of producing thick layers of silicon dioxide
- Patent number 4,604,304
- Issue date Aug 5, 1986
- RCA Corporation
- Lorenzo Faraone
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
UV erasable EPROM with UV transparent silicon oxynitride coating
- Patent number 4,581,622
- Issue date Apr 8, 1986
- Fujitsu Limited
- Kanetake Takasaki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
High quality gate oxides for VLSI devices
- Patent number 4,574,466
- Issue date Mar 11, 1986
- GTE Communication Systems Corporation
- George F. Hagner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of producing a semiconductor device
- Patent number 4,532,022
- Issue date Jul 30, 1985
- Fujitsu Limited
- Kanetake Takasaki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of making integrated devices having long and short minority...
- Patent number 4,521,256
- Issue date Jun 4, 1985
- Tokyo Shibaura Denki Kabushiki Kaisha
- Shunichi Hiraki
- H01 - BASIC ELECTRIC ELEMENTS

Industry

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Current Industry

Patents Grantslast 30 patents

Insulating material, substrate covered with an insulating film, met...

Semiconductor device having a porous insulation film

Process for plugging defects in a dielectric layer of a semiconduct...

Method and apparatus for semiconductor device passivation

Compound semiconductor interface control using cationic ingredient...

Method of making a buried crescent laser with air gap insulator

Single crystal films of cubic group II fluorides on semiconductor c...

Planarization process

Method of fabricating single crystal films of cubic group II fluori...

Method of making silicon on insalator material using oxygen implant...

Native oxide reduction for sealing nitride deposition

Method of forming an improved gate dielectric for a MOSFET on an in...

Method of manufacturing semiconductor devices

Process of producing thick layers of silicon dioxide

UV erasable EPROM with UV transparent silicon oxynitride coating

High quality gate oxides for VLSI devices

Process of producing a semiconductor device

Method of making integrated devices having long and short minority...

Patents Applicationslast 30 patents