Intermediate layers between substrates and deposited layers

Industry

CPC
H01L21/02436

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/02436Intermediate layers between substrates and deposited layers

Industries

Patents Grantslast 30 patents

Information Patent Grant
Method for manufacturing a substrate
- Patent number 11,837,463
- Issue date Dec 5, 2023
- Soitec
- Pascal Guenard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,742,248
- Issue date Aug 29, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Pei-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a multi-layer diffusion barrier and met...
- Patent number 11,742,393
- Issue date Aug 29, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jyh-nan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having multi-layer diffusion barrier and metho...
- Patent number 11,264,467
- Issue date Mar 1, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jyh-nan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride composite substrate and method for manufacturing...
- Patent number 11,094,537
- Issue date Aug 17, 2021
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with insulating layers forming a bonding plane...
- Patent number 10,998,370
- Issue date May 4, 2021
- Canon Kabushiki Kaisha
- Hiroshi Ikakura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming an alignment mark
- Patent number 10,950,487
- Issue date Mar 16, 2021
- Infineon Technologies Austria AG
- Daniel Tutuc
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a substrate
- Patent number 10,943,778
- Issue date Mar 9, 2021
- Soitec
- Pascal Guenard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing III-N templates and the reprocessing thereof a...
- Patent number 10,883,191
- Issue date Jan 5, 2021
- Freiberger Compound Materials GmbH
- Frank Lipski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 10,840,152
- Issue date Nov 17, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Pei-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a multi-layer diffusion barrier
- Patent number 10,749,004
- Issue date Aug 18, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jyh-nan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Processes for producing III-N single crystals, and III-N single cry...
- Patent number 10,584,427
- Issue date Mar 10, 2020
- Freiberger Compound Materials GmbH
- Marit Gründer
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing III-N templates and the reprocessing thereof a...
- Patent number 10,309,037
- Issue date Jun 4, 2019
- Freiberger Compound Materials GMBH
- Frank Lipski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing III-N single crystals, and III-N single crystal
- Patent number 9,896,779
- Issue date Feb 20, 2018
- Freiberger Compound Materials GmbH
- Marit Gründer
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing magnetoresistive element
- Patent number 9,865,805
- Issue date Jan 9, 2018
- Canon Anelva Corporation
- Takuya Seino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming low temperature polysilicon thin film
- Patent number 9,633,844
- Issue date Apr 25, 2017
- BOE Technology Group Co., Ltd.
- Xueyan Tian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor device with SEG film active region
- Patent number 9,418,845
- Issue date Aug 16, 2016
- SK Hynix Inc.
- Young Bog Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of III-V compound materials on silicon
- Patent number 9,406,566
- Issue date Aug 2, 2016
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for processing an oxygen containing semiconductor body
- Patent number 9,312,120
- Issue date Apr 12, 2016
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite substrate, manufacturing method of the same and organic e...
- Patent number 9,112,181
- Issue date Aug 18, 2015
- Panasonic Corporation
- Kazuyuki Yamae
- B32 - LAYERED PRODUCTS
Information Patent Grant
Method of forming light-emitting diode
- Patent number 9,048,345
- Issue date Jun 2, 2015
- Epistar Corporation
- Yi-Ming Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing GaN-based film and composite substrate used...
- Patent number 8,962,365
- Issue date Feb 24, 2015
- Sumitomo Electric Industies, Ltd.
- Issei Satoh
- C30 - CRYSTAL GROWTH
Information Patent Grant
Multilayer substrate structure and method of manufacturing the same
- Patent number 8,956,952
- Issue date Feb 17, 2015
- Tivra Corporation
- Francisco Machuca
- C30 - CRYSTAL GROWTH
Information Patent Grant
GaN epitaxy with migration enhancement and surface energy modification
- Patent number 8,524,581
- Issue date Sep 3, 2013
- Intermolecular, Inc.
- Philip A. Kraus
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Faceted ceramic fibers, tapes or ribbons and epitaxial devices ther...
- Patent number 8,481,460
- Issue date Jul 9, 2013
- UT-Battelle, LLC
- Amit Goyal
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Nitride semiconductor light-emitting device and fabrication method...
- Patent number 8,377,801
- Issue date Feb 19, 2013
- LG Innotek Co., Ltd
- Ho Sang Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device with SEG film active...
- Patent number 8,236,665
- Issue date Aug 7, 2012
- Hynix Semiconductor Inc.
- Young Bog Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Faceted ceramic fibers, tapes or ribbons and epitaxial devices ther...
- Patent number 8,227,082
- Issue date Jul 24, 2012
- UT-Battelle, LLC
- Amit Goyal
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for manufacturing microcrystalline semiconductor film, thin...
- Patent number 8,187,956
- Issue date May 29, 2012
- Semiconductor Energy Laboratory Co., Ltd.
- Yasuhiro Jinbo
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Nanocrystal silicon layer structures formed using plasma deposition...
- Patent number 8,110,485
- Issue date Feb 7, 2012
- Sungkyunkwan University Foundation for Corporate Collaboration
- Jun sin Yi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR MANUFACTURING A SUBSTRATE
- Publication number 20240014027
- Publication date Jan 11, 2024
- SOITEC
- Pascal Guenard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYER DIFFUSION BARRIER AND METHOD OF MAKING THE SAME
- Publication number 20220190122
- Publication date Jun 16, 2022
- Taiwan Semiconductor Manufacturing Co., LTD
- Jyh-nan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DIVIDING A BAR OF ONE OR MORE DEVICES
- Publication number 20210090885
- Publication date Mar 25, 2021
- The Regents of the University of California
- Takeshi Kamikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20210082773
- Publication date Mar 18, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Pei-Wei LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A SUBSTRATE
- Publication number 20210066063
- Publication date Mar 4, 2021
- SOITEC
- Pascal Guenard
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
MULTI-LAYER DIFFUSION BARRIER AND METHOD OF MAKING THE SAME
- Publication number 20200365695
- Publication date Nov 19, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Jyh-nan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Atomic Scale Data Storage Device by Means of Atomic Vacancy Manipul...
- Publication number 20200176028
- Publication date Jun 4, 2020
- Technische Universiteit Delft
- Ranko Toskovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20200105615
- Publication date Apr 2, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Pei-Wei LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING III-N TEMPLATES AND THE REPROCESSING THEREOF A...
- Publication number 20190276950
- Publication date Sep 12, 2019
- FREIBERGER COMPOUND MATERIALS GMBH
- Frank LIPSKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A SUBSTRATE
- Publication number 20190088462
- Publication date Mar 21, 2019
- SOITEC
- Pascal Guenard
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
MULTI-LAYER DIFFUSION BARRIER AND METHOD OF MAKING THE SAME
- Publication number 20190006474
- Publication date Jan 3, 2019
- Taiwan Semiconductor Manufacturing Co., LTD
- Jyh-nan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESSES FOR PRODUCING III-N SINGLE CRYSTALS, AND III-N SINGLE CRY...
- Publication number 20180237944
- Publication date Aug 23, 2018
- FREIBERGER COMPOUND MATERIALS GMBH
- Marit GRÜNDER
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Processing an Oxygen Containing Semiconductor Body
- Publication number 20160064206
- Publication date Mar 3, 2016
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STACK AND CONTACT STRUCTURE
- Publication number 20150194517
- Publication date Jul 9, 2015
- Hui ZANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SEG FILM ACTIVE REGION
- Publication number 20150132897
- Publication date May 14, 2015
- SK HYNIX INC.
- Young Bog KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOUND SEMICONDUCTOR STRUCTURE
- Publication number 20150061078
- Publication date Mar 5, 2015
- International Business Machines Corporation
- Stefan Abel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LAMINATE AND METHOD FOR MANUFACTURING SAME, METHOD FO...
- Publication number 20150053263
- Publication date Feb 26, 2015
- TEIJIN LIMITED
- Tetsuya Imamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ACCELERATED RELAXATION OF STRAIN-RELAXED EPITAXIAL BUFFERS BY USE O...
- Publication number 20150050753
- Publication date Feb 19, 2015
- Applied Materials, Inc.
- Swaminathan T. SRINIVASAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING LIGHT-EMITTING DIODE
- Publication number 20140295588
- Publication date Oct 2, 2014
- EPISTAR CORPORATION
- Yi-Ming CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING LOW TEMPERATURE POLYSILICON THIN FILM
- Publication number 20140057419
- Publication date Feb 27, 2014
- BOE TECHNOLOGY GROUP CO., LTD.
- Xueyan Tian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYER SUBSTRATE STRUCTURE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20130334568
- Publication date Dec 19, 2013
- Tivra Corporation
- Francisco Machuca
- C30 - CRYSTAL GROWTH
Information Patent Application
LATTICE MATCHING LAYER FOR USE IN A MULTILAYER SUBSTRATE STRUCTURE
- Publication number 20130333611
- Publication date Dec 19, 2013
- Tivra Corporation
- Indranil De
- C30 - CRYSTAL GROWTH
Information Patent Application
GaN Epitaxy With Migration Enhancement and Surface Energy Modification
- Publication number 20130313566
- Publication date Nov 28, 2013
- Intermolecular, Inc.
- Philip A. Kraus
- C30 - CRYSTAL GROWTH
Information Patent Application
GaN Epitaxy With Migration Enhancement and Surface Energy Modification
- Publication number 20130171805
- Publication date Jul 4, 2013
- INTERMOLECULAR INC.
- Philip A. Kraus
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING GaN-BASED FILM AND COMPOSITE SUBSTRATE USED...
- Publication number 20130149847
- Publication date Jun 13, 2013
- Sumitomo Electric Industries, Ltd.
- Issei Satoh
- C30 - CRYSTAL GROWTH
Information Patent Application
FACETED CERAMIC FIBERS, TAPES OR RIBBONS AND EPITAXIAL DEVICES THER...
- Publication number 20120309632
- Publication date Dec 6, 2012
- UT-Battelle, LLC
- Amit Goyal
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE WITH SEG FILM ACTIVE REGION
- Publication number 20120280394
- Publication date Nov 8, 2012
- HYNIX SEMICONDUCTOR INC.
- Young Bog KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING LIGHT-EMITTING DIODE
- Publication number 20110159624
- Publication date Jun 30, 2011
- Yi-Ming Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATING METHOD...
- Publication number 20100207099
- Publication date Aug 19, 2010
- Seung Hyun YANG
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE WITH SEG FILM ACTIVE...
- Publication number 20100197110
- Publication date Aug 5, 2010
- Hynix Semiconductor Inc.
- Young Bog KIM
- H01 - BASIC ELECTRIC ELEMENTS

Intermediate layers between substrates and deposited layers

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method for manufacturing a substrate

Semiconductor device and manufacturing method thereof

Semiconductor device having a multi-layer diffusion barrier and met...

Semiconductor device having multi-layer diffusion barrier and metho...

Group III nitride composite substrate and method for manufacturing...

Semiconductor device with insulating layers forming a bonding plane...

Method for forming an alignment mark

Method for manufacturing a substrate

Method for producing III-N templates and the reprocessing thereof a...

Semiconductor device and manufacturing method thereof

Semiconductor device having a multi-layer diffusion barrier

Processes for producing III-N single crystals, and III-N single cry...

Method for producing III-N templates and the reprocessing thereof a...

Method for producing III-N single crystals, and III-N single crystal

Method for manufacturing magnetoresistive element

Method for forming low temperature polysilicon thin film

Method for forming semiconductor device with SEG film active region

Integration of III-V compound materials on silicon

Method for processing an oxygen containing semiconductor body

Composite substrate, manufacturing method of the same and organic e...

Method of forming light-emitting diode

Method of manufacturing GaN-based film and composite substrate used...

Multilayer substrate structure and method of manufacturing the same

GaN epitaxy with migration enhancement and surface energy modification

Faceted ceramic fibers, tapes or ribbons and epitaxial devices ther...

Nitride semiconductor light-emitting device and fabrication method...

Method for manufacturing semiconductor device with SEG film active...

Faceted ceramic fibers, tapes or ribbons and epitaxial devices ther...

Method for manufacturing microcrystalline semiconductor film, thin...

Nanocrystal silicon layer structures formed using plasma deposition...

Patents Applicationslast 30 patents

METHOD FOR MANUFACTURING A SUBSTRATE

MULTI-LAYER DIFFUSION BARRIER AND METHOD OF MAKING THE SAME

METHOD FOR DIVIDING A BAR OF ONE OR MORE DEVICES

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

METHOD FOR MANUFACTURING A SUBSTRATE

MULTI-LAYER DIFFUSION BARRIER AND METHOD OF MAKING THE SAME

Atomic Scale Data Storage Device by Means of Atomic Vacancy Manipul...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

METHOD FOR PRODUCING III-N TEMPLATES AND THE REPROCESSING THEREOF A...

METHOD FOR MANUFACTURING A SUBSTRATE

MULTI-LAYER DIFFUSION BARRIER AND METHOD OF MAKING THE SAME

PROCESSES FOR PRODUCING III-N SINGLE CRYSTALS, AND III-N SINGLE CRY...

Method for Processing an Oxygen Containing Semiconductor Body

GATE STACK AND CONTACT STRUCTURE

SEMICONDUCTOR DEVICE WITH SEG FILM ACTIVE REGION

COMPOUND SEMICONDUCTOR STRUCTURE

SEMICONDUCTOR LAMINATE AND METHOD FOR MANUFACTURING SAME, METHOD FO...

ACCELERATED RELAXATION OF STRAIN-RELAXED EPITAXIAL BUFFERS BY USE O...

METHOD OF FORMING LIGHT-EMITTING DIODE

METHOD FOR FORMING LOW TEMPERATURE POLYSILICON THIN FILM

MULTILAYER SUBSTRATE STRUCTURE AND METHOD OF MANUFACTURING THE SAME

LATTICE MATCHING LAYER FOR USE IN A MULTILAYER SUBSTRATE STRUCTURE

GaN Epitaxy With Migration Enhancement and Surface Energy Modification

GaN Epitaxy With Migration Enhancement and Surface Energy Modification

METHOD OF MANUFACTURING GaN-BASED FILM AND COMPOSITE SUBSTRATE USED...

FACETED CERAMIC FIBERS, TAPES OR RIBBONS AND EPITAXIAL DEVICES THER...

SEMICONDUCTOR DEVICE WITH SEG FILM ACTIVE REGION

METHOD OF FORMING LIGHT-EMITTING DIODE

NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATING METHOD...

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE WITH SEG FILM ACTIVE...