introducing electrical inactive or active impurities in the local oxidation region

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H01L21/76213

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/76213introducing electrical inactive or active impurities in the local oxidation region

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor structure with partially embedded insulation region a...
- Patent number 11,469,136
- Issue date Oct 11, 2022
- STMicroelectronics S.r.l.
- Simone Dario Mariani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk nanosheet with dielectric isolation
- Patent number 11,456,354
- Issue date Sep 27, 2022
- TESSERA LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with partially embedded insulation region
- Patent number 10,796,942
- Issue date Oct 6, 2020
- STMicroelectronics S.r.l.
- Simone Dario Mariani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 10,741,541
- Issue date Aug 11, 2020
- Infineon Technologies Dresden GmbH
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Footing removal for nitride spacer
- Patent number 10,629,473
- Issue date Apr 21, 2020
- Applied Materials, Inc.
- Jungmin Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus with channel stop doped devices
- Patent number 10,483,171
- Issue date Nov 19, 2019
- Synopsys, Inc.
- Victor Moroz
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor device with localized carrier lifetime reduction and...
- Patent number 10,381,259
- Issue date Aug 13, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd
- Alex Kalnitsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk nanosheet with dielectric isolation
- Patent number 10,374,035
- Issue date Aug 6, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk nanosheet with dielectric isolation
- Patent number 10,312,323
- Issue date Jun 4, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained finFET device fabrication
- Patent number 10,032,680
- Issue date Jul 24, 2018
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus with channel stop doped devices
- Patent number 9,917,018
- Issue date Mar 13, 2018
- Synopsys, Inc.
- Victor Moroz
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Strained FinFET device fabrication
- Patent number 9,917,019
- Issue date Mar 13, 2018
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained finFET device fabrication
- Patent number 9,805,992
- Issue date Oct 31, 2017
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained finFET device fabrication
- Patent number 9,805,991
- Issue date Oct 31, 2017
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold voltage and well implantation method for semiconductor de...
- Patent number 9,780,002
- Issue date Oct 3, 2017
- GLOBALFOUNDRIES Inc.
- Xintuo Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing III-V epitaxial layers
- Patent number 9,748,331
- Issue date Aug 29, 2017
- Epigan NV
- Joff Derluyn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming fin isolation regions on FinFET semiconductor de...
- Patent number 9,673,083
- Issue date Jun 6, 2017
- GLOBALFOUNDRIES Inc.
- Ajey Poovannummoottil Jacob
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple-time programming memory cells and methods for forming the...
- Patent number 9,373,627
- Issue date Jun 21, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ching-Hung Fu
- G11 - INFORMATION STORAGE
Information Patent Grant
Manufacturing method for semiconductor device with discrete field o...
- Patent number 9,252,240
- Issue date Feb 2, 2016
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Jian Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having buried layer and method for forming the...
- Patent number 9,159,785
- Issue date Oct 13, 2015
- Semiconductor Manufacturing International (Shanghai) Corporation
- Jiwei He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple-time programming memory cells and methods for forming the...
- Patent number 8,952,442
- Issue date Feb 10, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ching-Hung Fu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for reoxidizing an oxide and for fabricating semiconductor...
- Patent number 8,790,982
- Issue date Jul 29, 2014
- Micron Technology, Inc.
- Li Li
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Local oxidation of silicon processes with reduced lateral oxidation
- Patent number 8,778,717
- Issue date Jul 15, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ru-Shang Hsiao
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Multiple-time programming memory cells and methods for forming the...
- Patent number 8,772,854
- Issue date Jul 8, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ching-Hung Fu
- G11 - INFORMATION STORAGE
Information Patent Grant
Structures including an at least partially reoxidized oxide material
- Patent number 8,492,851
- Issue date Jul 23, 2013
- Micron Technology, Inc.
- Li Li
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor structures for latch-up suppression and methods of fo...
- Patent number 7,791,145
- Issue date Sep 7, 2010
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor device
- Patent number 7,651,933
- Issue date Jan 26, 2010
- Hynix Semiconductor Inc.
- Guee-Hwang Sim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures for latch-up suppression and methods of fo...
- Patent number 7,645,676
- Issue date Jan 12, 2010
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 7,534,665
- Issue date May 19, 2009
- Sanyo Electric Co., LTD
- Takashi Ogura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion-assisted oxidation methods and the resulting structures
- Patent number 7,371,697
- Issue date May 13, 2008
- Micron Technology, Inc.
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
- Publication number 20240421198
- Publication date Dec 19, 2024
- Rohm Co., Ltd.
- Kunihiko Iwamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bulk Nanosheet with Dielectric Isolation
- Publication number 20230197781
- Publication date Jun 22, 2023
- TESSERA LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNIVERSAL ELECTRICALLY INACTIVE DEVICES FOR INTEGRATED CIRCUIT PACK...
- Publication number 20220165625
- Publication date May 26, 2022
- Intel Corporation
- Xavier Brun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCAL INSULATION BY OXIDE REGION MADE FROM POROUS SILICON
- Publication number 20200395240
- Publication date Dec 17, 2020
- STMicroelectronics S.r.l.
- Simone Dario MARIANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Strucure with Partially Embedded Insulation Region
- Publication number 20200058540
- Publication date Feb 20, 2020
- STMicroelectronics S.r.l.
- Simone Dario MARIANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bulk Nanosheet with Dielectric Isolation
- Publication number 20190312104
- Publication date Oct 10, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and Apparatus with Channel Stop Doped Devices
- Publication number 20180226301
- Publication date Aug 9, 2018
- Synopsys, Inc.
- VICTOR MOROZ
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Method of Manufacturing a Semiconductor Device
- Publication number 20180096985
- Publication date Apr 5, 2018
- INFINEON TECHNOLOGIES DRESDEN GMBH
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FOOTING REMOVAL FOR NITRIDE SPACER
- Publication number 20180076083
- Publication date Mar 15, 2018
- Applied Materials, Inc.
- Jungmin Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ACTIVE REGIONS WITH COMPATIBLE DIELECTRIC LAYERS
- Publication number 20170062593
- Publication date Mar 2, 2017
- Pushkar Ranade
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED FINFET DEVICE FABRICATION
- Publication number 20170053838
- Publication date Feb 23, 2017
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING FIN ISOLATION REGIONS ON FINFET SEMICONDUCTOR DE...
- Publication number 20160225659
- Publication date Aug 4, 2016
- GLOBALFOUNDRIES INC.
- Ajey Poovannummoottil Jacob
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Growing III-V Epitaxial Layers
- Publication number 20160099309
- Publication date Apr 7, 2016
- EpiGaN NV
- Joff Derluyn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE WITH DISCRETE FIELD O...
- Publication number 20150295069
- Publication date Oct 15, 2015
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Jian Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multiple-Time Programming Memory Cells and Methods for Forming the...
- Publication number 20140308798
- Publication date Oct 16, 2014
- Ching-Hung Fu
- G11 - INFORMATION STORAGE
Information Patent Application
Method for Growing III-V Epitaxial Layers
- Publication number 20140167114
- Publication date Jun 19, 2014
- EpiGaN NV
- Joff Derluyn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS WITH CHANNEL STOP DOPED DEVICES
- Publication number 20140154855
- Publication date Jun 5, 2014
- Victor Moroz
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR DEVICE HAVING BURIED LAYER AND METHOD FOR FORMING THE...
- Publication number 20140077342
- Publication date Mar 20, 2014
- SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORP.
- JIWEI HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR REOXIDIZING AN OXIDE AND FOR FABRICATING SEMICONDUCTOR...
- Publication number 20130309855
- Publication date Nov 21, 2013
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multiple-Time Programming Memory Cells and Methods for Forming the...
- Publication number 20130256772
- Publication date Oct 3, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ching-Hung Fu
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor Device and Method of Manufacturing the Same
- Publication number 20110254119
- Publication date Oct 20, 2011
- Hynix Semiconductor Inc.
- Ji H. Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Local Oxidation of Silicon Processes with Reduced Lateral Oxidation
- Publication number 20110230002
- Publication date Sep 22, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ru-Shang Hsiao
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Method of Manufacturing Semiconductor Device
- Publication number 20100075477
- Publication date Mar 25, 2010
- Hynix Semiconductor Inc.
- Ji Hyun Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
- Publication number 20090130820
- Publication date May 21, 2009
- Dae-Young Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20090053879
- Publication date Feb 26, 2009
- Hynix Semiconductor Inc,
- Guee-Hwang SIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION-ASSISTED OXIDATION METHODS AND THE RESULTING STRUCTURES
- Publication number 20080203542
- Publication date Aug 28, 2008
- Micron Technology, Inc.
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES FOR LATCH-UP SUPPRESSION AND METHODS OF FO...
- Publication number 20080057671
- Publication date Mar 6, 2008
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES FOR LATCH-UP SUPPRESSION AND METHODS OF FO...
- Publication number 20070241409
- Publication date Oct 18, 2007
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor structures for latch-up suppression and methods of fo...
- Publication number 20070170518
- Publication date Jul 26, 2007
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for preparing a gate oxide layer
- Publication number 20070155187
- Publication date Jul 5, 2007
- PROMOS TECHNOLOGIES INC.
- Chung Yi Chen
- H01 - BASIC ELECTRIC ELEMENTS

introducing electrical inactive or active impurities in the local oxidation region

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor structure with partially embedded insulation region a...

Bulk nanosheet with dielectric isolation

Semiconductor structure with partially embedded insulation region

Method of manufacturing a semiconductor device

Footing removal for nitride spacer

Method and apparatus with channel stop doped devices

Semiconductor device with localized carrier lifetime reduction and...

Bulk nanosheet with dielectric isolation

Bulk nanosheet with dielectric isolation

Strained finFET device fabrication

Method and apparatus with channel stop doped devices

Strained FinFET device fabrication

Strained finFET device fabrication

Strained finFET device fabrication

Threshold voltage and well implantation method for semiconductor de...

Method for growing III-V epitaxial layers

Methods of forming fin isolation regions on FinFET semiconductor de...

Multiple-time programming memory cells and methods for forming the...

Manufacturing method for semiconductor device with discrete field o...

Semiconductor device having buried layer and method for forming the...

Multiple-time programming memory cells and methods for forming the...

Methods for reoxidizing an oxide and for fabricating semiconductor...

Local oxidation of silicon processes with reduced lateral oxidation

Multiple-time programming memory cells and methods for forming the...

Structures including an at least partially reoxidized oxide material

Semiconductor structures for latch-up suppression and methods of fo...

Method of fabricating semiconductor device

Semiconductor structures for latch-up suppression and methods of fo...

Method of manufacturing semiconductor device

Ion-assisted oxidation methods and the resulting structures

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

Bulk Nanosheet with Dielectric Isolation

UNIVERSAL ELECTRICALLY INACTIVE DEVICES FOR INTEGRATED CIRCUIT PACK...

LOCAL INSULATION BY OXIDE REGION MADE FROM POROUS SILICON

Semiconductor Strucure with Partially Embedded Insulation Region

Bulk Nanosheet with Dielectric Isolation

Method and Apparatus with Channel Stop Doped Devices

Method of Manufacturing a Semiconductor Device

FOOTING REMOVAL FOR NITRIDE SPACER

ACTIVE REGIONS WITH COMPATIBLE DIELECTRIC LAYERS

STRAINED FINFET DEVICE FABRICATION

METHODS OF FORMING FIN ISOLATION REGIONS ON FINFET SEMICONDUCTOR DE...

Method for Growing III-V Epitaxial Layers

MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE WITH DISCRETE FIELD O...

Multiple-Time Programming Memory Cells and Methods for Forming the...

Method for Growing III-V Epitaxial Layers

METHOD AND APPARATUS WITH CHANNEL STOP DOPED DEVICES

SEMICONDUCTOR DEVICE HAVING BURIED LAYER AND METHOD FOR FORMING THE...

METHODS FOR REOXIDIZING AN OXIDE AND FOR FABRICATING SEMICONDUCTOR...

Multiple-Time Programming Memory Cells and Methods for Forming the...

Semiconductor Device and Method of Manufacturing the Same

Local Oxidation of Silicon Processes with Reduced Lateral Oxidation

Method of Manufacturing Semiconductor Device

METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE

METHOD OF FABRICATING SEMICONDUCTOR DEVICE

ION-ASSISTED OXIDATION METHODS AND THE RESULTING STRUCTURES

SEMICONDUCTOR STRUCTURES FOR LATCH-UP SUPPRESSION AND METHODS OF FO...

SEMICONDUCTOR STRUCTURES FOR LATCH-UP SUPPRESSION AND METHODS OF FO...

Semiconductor structures for latch-up suppression and methods of fo...

Method for preparing a gate oxide layer