introduction of substances into an already existing insulating layer

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H01L21/02321

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/02321introduction of substances into an already existing insulating layer

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device, and method for protecting low-k dielectric fe...
- Patent number 12,136,660
- Issue date Nov 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Ming Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,125,876
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuan-Cheng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for providing doped silicon using a diffusion barrier layer
- Patent number 12,125,705
- Issue date Oct 22, 2024
- Lam Research Corporation
- Purushottam Kumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mechanism for finFET well doping
- Patent number 12,112,975
- Issue date Oct 8, 2024
- Taiwan Semiconductor Manufacturing Company
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Highly etch selective amorphous carbon film
- Patent number 12,112,949
- Issue date Oct 8, 2024
- Applied Materials, Inc.
- Rajesh Prasad
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Strained gate semiconductor device having an interlayer dielectric...
- Patent number 12,100,767
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Ta Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure
- Patent number 12,087,834
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Wen Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuitry, memory arrays comprising strings of memory ce...
- Patent number 12,087,632
- Issue date Sep 10, 2024
- Micron Technology, Inc.
- Corey Staller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Highly etch selective amorphous carbon film
- Patent number 12,014,927
- Issue date Jun 18, 2024
- Applied Materials, Inc.
- Rajesh Prasad
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods of reducing gate spacer loss during semiconductor manufactu...
- Patent number 11,908,685
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Ruei Jhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate processing method and substrate processing apparatus
- Patent number 11,887,861
- Issue date Jan 30, 2024
- Tokyo Electron Limited
- Jaewon Woo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 11,869,927
- Issue date Jan 9, 2024
- Tokyo Electron Limited
- Yumiko Kawano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having dipole-inducing elements
- Patent number 11,855,098
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Yen Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device and method for high pressure anneal
- Patent number 11,854,800
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Szu-Ying Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric semiconductor device and method
- Patent number 11,855,221
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Cheng Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 11,830,927
- Issue date Nov 28, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Cheng-Hsien Wu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Iodine-containing fluorocarbon and hydrofluorocarbon compounds for...
- Patent number 11,798,811
- Issue date Oct 24, 2023
- American Air Liquide, Inc.
- Fabrizio Marchegiani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for improved low dielectric constant film processing
- Patent number 11,756,796
- Issue date Sep 12, 2023
- Applied Materials, Inc.
- Rajesh Prasad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mechanism for FinFET well doping
- Patent number 11,742,237
- Issue date Aug 29, 2023
- Taiwan Semiconductor Manufacturing Company
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure passivating species drive-in method and structure fo...
- Patent number 11,710,638
- Issue date Jul 25, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsiao-Kuan Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having improved overlay shift tolerance
- Patent number 11,664,237
- Issue date May 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien-Hua Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor device and resulting device
- Patent number 11,610,823
- Issue date Mar 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tong-Min Weng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect structure for semiconductor device and methods of fabr...
- Patent number 11,610,841
- Issue date Mar 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Ta Yu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Integrated circuits with doped gate dielectrics
- Patent number 11,605,537
- Issue date Mar 14, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric semiconductor device and method
- Patent number 11,522,085
- Issue date Dec 6, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Cheng Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 11,502,080
- Issue date Nov 15, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Yen Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Highly etch selective amorphous carbon film
- Patent number 11,469,107
- Issue date Oct 11, 2022
- Applied Materials, Inc.
- Rajesh Prasad
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor structure and formation method thereof
- Patent number 11,444,183
- Issue date Sep 13, 2022
- Semiconductor Manufacturing International (Shanghai) Corporation
- Nan Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure formation
- Patent number 11,404,267
- Issue date Aug 2, 2022
- Micron Technology, Inc.
- Santanu Sarkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure of semiconductor device and method of manufacture
- Patent number 11,361,977
- Issue date Jun 14, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsan-Chun Wang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE, AND METHOD FOR PROTECTING LOW-K DIELECTRIC FE...
- Publication number 20240395901
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Ming LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240363707
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Wen HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR CHEMICALLY ETCHING A TARGET LAYER
- Publication number 20240363358
- Publication date Oct 31, 2024
- ASM IP HOLDING B.V.
- Timothee Blanquart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED DIPOLE REGION FOR TRANSISTOR
- Publication number 20240332008
- Publication date Oct 3, 2024
- Applied Materials, Inc.
- Geetika Bajaj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION IMPLANTATION FOR REDUCED ROUGHNESS OF SILICON NITRIDE
- Publication number 20240332009
- Publication date Oct 3, 2024
- Applied Materials, Inc.
- Qixin Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INFLUENCE FUNCTION-BASED MITIGATION OF SUBSTRATE DEFORMATION WITH F...
- Publication number 20240266233
- Publication date Aug 8, 2024
- Applied Materials, Inc.
- Wonjae Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Methods of Reducing Gate Spacer Loss During Semiconductor Manufactu...
- Publication number 20240194480
- Publication date Jun 13, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Yi-Ruei Jhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Volume-less Fluorine Incorporation Method
- Publication number 20240071767
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsueh-Ju Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240014294
- Publication date Jan 11, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Hsien WU
- B82 - NANO-TECHNOLOGY
Information Patent Application
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
- Publication number 20230395371
- Publication date Dec 7, 2023
- TOKYO ELECTRON LIMITED
- Kazumasa IGARASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric Semiconductor Device and Method
- Publication number 20230387310
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Cheng Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE AND METHOD FOR HIGH PRESSURE ANNEAL
- Publication number 20230386832
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Szu-Ying Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Mechanism for FinFET Well Doping
- Publication number 20230343634
- Publication date Oct 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Structure Passivating Species Drive-In Method and Structure Fo...
- Publication number 20230317457
- Publication date Oct 5, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsiao-Kuan Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective Removal Of An Etching Stop Layer For Improving Overlay Sh...
- Publication number 20230298900
- Publication date Sep 21, 2023
- Taiwan Semiconductor Manufacturing Co., LTD
- Chien-Hua Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SEMICONDUCTOR DEVICE AND RESULTING DEVICE
- Publication number 20230207395
- Publication date Jun 29, 2023
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Tong-Min WENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR FORMING MATERIAL WITHIN A GAP
- Publication number 20230099607
- Publication date Mar 30, 2023
- ASM IP HOLDING B.V.
- Timothee Blanquart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices Having Dipole-Inducing Elements
- Publication number 20230073400
- Publication date Mar 9, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Yen Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGHLY ETCH SELECTIVE AMORPHOUS CARBON FILM
- Publication number 20230041963
- Publication date Feb 9, 2023
- Applied Materials, Inc.
- Rajesh PRASAD
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
HIGHLY ETCH SELECTIVE AMORPHOUS CARBON FILM
- Publication number 20230029929
- Publication date Feb 2, 2023
- Applied Materials, Inc.
- Rajesh PRASAD
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHODS FOR FORMING DOPED SILICON OXIDE THIN FILMS
- Publication number 20230031720
- Publication date Feb 2, 2023
- ASM INTERNATIONAL N.V.
- Noboru Takamure
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, AND METHOD FOR PROTECTING LOW-K DIELECTRIC FE...
- Publication number 20230009745
- Publication date Jan 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Ming LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES FOR IMPROVED LOW DIELECTRIC CONSTANT FILM PROCESSING
- Publication number 20220367205
- Publication date Nov 17, 2022
- Applied Materials, Inc.
- Rajesh Prasad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric Semiconductor Device and Method
- Publication number 20220367718
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Cheng Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE OF SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
- Publication number 20220310405
- Publication date Sep 29, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsan-Chun Wang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20220231149
- Publication date Jul 21, 2022
- Japan Display Inc.
- Akihiro HANADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20220190127
- Publication date Jun 16, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Wen HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PROVIDING DOPED SILICON
- Publication number 20220165563
- Publication date May 26, 2022
- LAM RESEARCH CORPORATION
- Purushottam KUMAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED GATE SEMICONDUCTOR DEVICE WITH DOPED INTERLAYER DIELECTRIC...
- Publication number 20220165882
- Publication date May 26, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Ta WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20220140111
- Publication date May 5, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Hsien WU
- B82 - NANO-TECHNOLOGY

introduction of substances into an already existing insulating layer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device, and method for protecting low-k dielectric fe...

Semiconductor device and method

Method for providing doped silicon using a diffusion barrier layer

Mechanism for finFET well doping

Highly etch selective amorphous carbon film

Strained gate semiconductor device having an interlayer dielectric...

Semiconductor structure

Integrated circuitry, memory arrays comprising strings of memory ce...

Highly etch selective amorphous carbon film

Methods of reducing gate spacer loss during semiconductor manufactu...

Substrate processing method and substrate processing apparatus

Method of manufacturing semiconductor device

Semiconductor devices having dipole-inducing elements

Device and method for high pressure anneal

Ferroelectric semiconductor device and method

Method of manufacturing semiconductor device

Iodine-containing fluorocarbon and hydrofluorocarbon compounds for...

Techniques for improved low dielectric constant film processing

Mechanism for FinFET well doping

Gate structure passivating species drive-in method and structure fo...

Semiconductor device having improved overlay shift tolerance

Method for forming semiconductor device and resulting device

Interconnect structure for semiconductor device and methods of fabr...

Integrated circuits with doped gate dielectrics

Ferroelectric semiconductor device and method

Semiconductor device and method

Highly etch selective amorphous carbon film

Semiconductor structure and formation method thereof

Semiconductor structure formation

Gate structure of semiconductor device and method of manufacture

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE, AND METHOD FOR PROTECTING LOW-K DIELECTRIC FE...

SEMICONDUCTOR DEVICE

METHODS FOR CHEMICALLY ETCHING A TARGET LAYER

INTEGRATED DIPOLE REGION FOR TRANSISTOR

ION IMPLANTATION FOR REDUCED ROUGHNESS OF SILICON NITRIDE

INFLUENCE FUNCTION-BASED MITIGATION OF SUBSTRATE DEFORMATION WITH F...

Methods of Reducing Gate Spacer Loss During Semiconductor Manufactu...

Volume-less Fluorine Incorporation Method

SEMICONDUCTOR DEVICE

SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

Ferroelectric Semiconductor Device and Method

DEVICE AND METHOD FOR HIGH PRESSURE ANNEAL

Mechanism for FinFET Well Doping

Gate Structure Passivating Species Drive-In Method and Structure Fo...

Selective Removal Of An Etching Stop Layer For Improving Overlay Sh...

METHOD FOR FORMING SEMICONDUCTOR DEVICE AND RESULTING DEVICE

METHOD AND SYSTEM FOR FORMING MATERIAL WITHIN A GAP

Semiconductor Devices Having Dipole-Inducing Elements

HIGHLY ETCH SELECTIVE AMORPHOUS CARBON FILM

HIGHLY ETCH SELECTIVE AMORPHOUS CARBON FILM

METHODS FOR FORMING DOPED SILICON OXIDE THIN FILMS

SEMICONDUCTOR DEVICE, AND METHOD FOR PROTECTING LOW-K DIELECTRIC FE...

TECHNIQUES FOR IMPROVED LOW DIELECTRIC CONSTANT FILM PROCESSING

Ferroelectric Semiconductor Device and Method

GATE STRUCTURE OF SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURE

METHOD FOR PROVIDING DOPED SILICON

STRAINED GATE SEMICONDUCTOR DEVICE WITH DOPED INTERLAYER DIELECTRIC...

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE