Ion implantation FETs/COMs

Industry

CPC
Y10S148/082

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

Current Industry

Y10S148/082Ion implantation FETs/COMs

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with selectively patterned connection pad laye...
- Patent number 5,818,091
- Issue date Oct 6, 1998
- Samsung Electronics Co., Ltd.
- Yong-hee Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS transistor having adjusted threshold voltage formed along with...
- Patent number 5,618,743
- Issue date Apr 8, 1997
- Siliconix Incorporated
- Richard K. Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PMOS transistors with different breakdown voltages formed in the sa...
- Patent number 5,583,061
- Issue date Dec 10, 1996
- Siliconix Incorporated
- Richard K. Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
BiCDMOS process technology
- Patent number 5,559,044
- Issue date Sep 24, 1996
- Siliconix Incorporated
- Richard K. Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a zener diode region and an isolation region
- Patent number 5,547,880
- Issue date Aug 20, 1996
- Siliconix Incorporated
- Richard K. Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a bipolar transistor having selected breakdown v...
- Patent number 5,541,123
- Issue date Jul 30, 1996
- Siliconix Incorporated
- Richard K. Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a lateral MOS transistor having lightly doped dr...
- Patent number 5,541,125
- Issue date Jul 30, 1996
- Siliconix Incorporated
- Richard K. Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a CMOS semiconductor device
- Patent number 5,484,739
- Issue date Jan 16, 1996
- Samsung Electronics Co., Ltd.
- Yong-hee Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a CMOS device with reduced number of photoli...
- Patent number 5,439,834
- Issue date Aug 8, 1995
- Winbond Electronics Corp.
- Heng-Tien Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep collection guard ring
- Patent number 5,438,005
- Issue date Aug 1, 1995
- Winbond Electronics Corp.
- Wen-Yueh Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming twin well CMOS integrated circuits
- Patent number 5,429,958
- Issue date Jul 4, 1995
- Harris Corporation
- Dyer A. Matlock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for simultaneously fabricating an insulated gate field-effe...
- Patent number 5,407,844
- Issue date Apr 18, 1995
- Texas Instruments Incorporated
- Michael C. Smayling
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a complementary MIS transistor
- Patent number 5,342,802
- Issue date Aug 30, 1994
- Nippondenso Co., Ltd.
- Ryoichi Kubokoya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor having a GaInAs/GaAs quantum well structure
- Patent number 5,331,185
- Issue date Jul 19, 1994
- Sumitomo Electric Industries, Ltd.
- Nobuhiro Kuwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating complementary enhancement and depletion mode...
- Patent number 5,300,443
- Issue date Apr 5, 1994
- The United States of America as represented by the Secretary of the Navy
- Randy L. Shimabukuro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of providing lower contact resistance in MOS transistor stru...
- Patent number 5,296,386
- Issue date Mar 22, 1994
- National Semiconductor Corporation
- Sheldon Aronowitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 5,290,709
- Issue date Mar 1, 1994
- NEC Corporation
- Akira Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Simplified high reliability gate oxide process
- Patent number 5,290,718
- Issue date Mar 1, 1994
- National Semiconductor Corporation
- Paul A. Fearon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing field effect transistor
- Patent number 5,286,662
- Issue date Feb 15, 1994
- Sumitomo Electric Industries, Ltd.
- Nobuhiro Kuwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming insulated gate field-effect transistors
- Patent number 5,275,961
- Issue date Jan 4, 1994
- Texas Instruments Incorporated
- Michael C. Smayling
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device fabrication
- Patent number 5,270,235
- Issue date Dec 14, 1993
- Seiko Epson Corporation
- Mitsuaki Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Modified silicon CMOS process having selectively deposited Si/SiGe...
- Patent number 5,268,324
- Issue date Dec 7, 1993
- International Business Machines Corporation
- John M. Aitken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming twin well CMOS integrated circuits
- Patent number 5,247,199
- Issue date Sep 21, 1993
- Harris Corporation
- Dyer A. Matlock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming MOS transistors
- Patent number 5,227,321
- Issue date Jul 13, 1993
- Micron Technology, Inc.
- Ruojia Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High withstanding voltage MIS transistor
- Patent number 5,216,272
- Issue date Jun 1, 1993
- Nippondenso Co., Ltd.
- Ryoichi Kubokoya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing insulated-gate type field effect transistor
- Patent number 5,185,279
- Issue date Feb 9, 1993
- Kabushiki Kaisha Toshiba
- Yukihiro Ushiku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of producing semiconductor device
- Patent number 5,180,682
- Issue date Jan 19, 1993
- Seiko Epson Corporation
- Masahiro Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing insulated-gate field effect transistor
- Patent number 5,175,119
- Issue date Dec 29, 1992
- Fujitsu Limited
- Takeshi Matsutani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for the preparation of semiconductor devices
- Patent number 5,158,904
- Issue date Oct 27, 1992
- Sharp Kabushiki Kaisha
- Takashi Ueda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing minimum counterdoping in twin well process
- Patent number 5,132,241
- Issue date Jul 21, 1992
- Industrial Technology Research Institute
- Wen-Doe Su
- H01 - BASIC ELECTRIC ELEMENTS

Ion implantation FETs/COMs

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device with selectively patterned connection pad laye...

MOS transistor having adjusted threshold voltage formed along with...

PMOS transistors with different breakdown voltages formed in the sa...

BiCDMOS process technology

Method for forming a zener diode region and an isolation region

Method for forming a bipolar transistor having selected breakdown v...

Method for forming a lateral MOS transistor having lightly doped dr...

Method for manufacturing a CMOS semiconductor device

Method for fabricating a CMOS device with reduced number of photoli...

Deep collection guard ring

Process for forming twin well CMOS integrated circuits

Process for simultaneously fabricating an insulated gate field-effe...

Method of manufacturing a complementary MIS transistor

Field effect transistor having a GaInAs/GaAs quantum well structure

Method for fabricating complementary enhancement and depletion mode...

Method of providing lower contact resistance in MOS transistor stru...

Method of manufacturing semiconductor device

Simplified high reliability gate oxide process

Method for manufacturing field effect transistor

Method of forming insulated gate field-effect transistors

Semiconductor device fabrication

Modified silicon CMOS process having selectively deposited Si/SiGe...

Process for forming twin well CMOS integrated circuits

Method for forming MOS transistors

High withstanding voltage MIS transistor

Method of manufacturing insulated-gate type field effect transistor

Semiconductor device and method of producing semiconductor device

Method of producing insulated-gate field effect transistor

Process for the preparation of semiconductor devices

Method of manufacturing minimum counterdoping in twin well process