Ion implantation of compound devices

Industry

CPC
Y10S148/084

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

Current Industry

Y10S148/084Ion implantation of compound devices

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 5,880,487
- Issue date Mar 9, 1999
- Kabushiki Kaisha Toshiba
- Chisato Furukawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of making a semiconductor device
- Patent number 5,683,937
- Issue date Nov 4, 1997
- Kabushiki Kaisha Toshiba
- Chisato Furukawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Soft proton isolation process for an acoustic charge transport inte...
- Patent number 5,418,375
- Issue date May 23, 1995
- Electronic Decisions, Inc.
- Michael J. Hoskins
- G11 - INFORMATION STORAGE
Information Patent Grant
Soft proton isolation process for an acoustic charge transport inte...
- Patent number 5,358,877
- Issue date Oct 25, 1994
- Electronic Decisions Inc.
- Michael J. Hoskins
- G11 - INFORMATION STORAGE
Information Patent Grant
Implanting impurities in semiconductors and semiconductor implanted...
- Patent number 5,294,557
- Issue date Mar 15, 1994
- The United States of America as represented by the Secretary of the Navy
- Frederick G. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wide band-gap semiconductors having low bipolar resistivity and met...
- Patent number 5,252,499
- Issue date Oct 12, 1993
- G. F. Neumark Rothschild
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Corrosion prevention of honeycomb core panel construction using ion...
- Patent number 5,224,249
- Issue date Jul 6, 1993
- Grumman Aerospace Corporation
- Michael G. Kornely
- B21 - MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL PUNCHING...
Information Patent Grant
Compound semiconductor single crystals and the method for making th...
- Patent number 5,219,632
- Issue date Jun 15, 1993
- Haruhito Shimakura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing InP junction FETS and junction HEMTS using...
- Patent number 5,196,358
- Issue date Mar 23, 1993
- The United States of America as represented by the Secretary of the Navy
- John B. Boos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a semiconductor optical device
- Patent number 5,145,792
- Issue date Sep 8, 1992
- Optical Measurement Technology Development Co., Ltd.
- Takaaki Hirata
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Interstitital doping in III-V semiconductors to avoid or suppress D...
- Patent number 5,139,960
- Issue date Aug 18, 1992
- Xerox Corporation
- James D. Chadi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device having superlattice structure, and method of and apparatus f...
- Patent number 5,113,072
- Issue date May 12, 1992
- Hitachi, Ltd.
- Hiroshi Yamaguchi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Producing a plasma containing beryllium and beryllium fluoride
- Patent number 5,073,507
- Issue date Dec 17, 1991
- Motorola, Inc.
- Charles T. Keller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for the manufacture of optical semiconductor device
- Patent number 5,019,519
- Issue date May 28, 1991
- Kokusai Denshin Denwa Kabushiki Kaisha
- Hideaki Tanaka
- G02 - OPTICS
Information Patent Grant
Method of manufacturing a heterojunction bipolar transistor
- Patent number 5,019,524
- Issue date May 28, 1991
- Hitachi, Ltd.
- Katsuhiko Mitani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing devices having superlattice structures
- Patent number 4,983,540
- Issue date Jan 8, 1991
- Hitachi, Ltd.
- Hiroshi Yamaguchi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 4,983,534
- Issue date Jan 8, 1991
- NEC Corporation
- Kuniko Kikuta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaAs FET manufacturing process employing channel confining layers
- Patent number 4,962,050
- Issue date Oct 9, 1990
- ITT Corporation
- Arthur E. Geissberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor laser
- Patent number 4,933,301
- Issue date Jun 12, 1990
- Spectra Diode Laboratories, Inc.
- Donald R. Scifres
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Open-tube, benign-environment annealing method for compound semicon...
- Patent number 4,898,834
- Issue date Feb 6, 1990
- Amber Engineering, Inc.
- Arthur H. Lockwood
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Patterning method in the manufacture of miniaturized devices
- Patent number 4,897,361
- Issue date Jan 30, 1990
- American Telephone and Telegraph Company, AT&T Bell Laboratories
- Lloyd R. Harriott
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Liquid crystal cell window
- Patent number 4,882,235
- Issue date Nov 21, 1989
- Raytheon Company
- Daniel P. Resler
- G02 - OPTICS
Information Patent Grant
Rapid thermal annealing of gallium arsenide with trimethyl arsenic...
- Patent number 4,879,259
- Issue date Nov 7, 1989
- The Board of Trustees of the Leland Stanford Junion University
- Scott K. Reynolds
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective intermixing of layered structures composed of thin solid...
- Patent number 4,865,923
- Issue date Sep 12, 1989
- Amoco Corporation
- John D. Ralston
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implantation and annealing of compound semiconductor layers
- Patent number 4,863,877
- Issue date Sep 5, 1989
- Kopin Corporation
- John C. C. Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of treating bodies of III-V compound semiconductor material
- Patent number 4,820,651
- Issue date Apr 11, 1989
- GTE Laboratories Incorporated
- Francisco C. Prince
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Aluminum liftoff masking process and product
- Patent number 4,818,712
- Issue date Apr 4, 1989
- Northrop Corporation
- John W. Tully
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ballistic heterojunction bipolar transistor
- Patent number 4,728,616
- Issue date Mar 1, 1988
- Cornell Research Foundation, Inc.
- David G. Ankri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivation of gallium arsenide by nitrogen implantation
- Patent number 4,706,377
- Issue date Nov 17, 1987
- United Technologies Corporation
- Alexander J. Shuskus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of adjusting threshold voltage subsequent to fabrication of...
- Patent number 4,701,422
- Issue date Oct 20, 1987
- Rockwell International Corporation
- Kenneth R. Elliott
- H01 - BASIC ELECTRIC ELEMENTS

Ion implantation of compound devices

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device and method for manufacturing the same

Method of making a semiconductor device

Soft proton isolation process for an acoustic charge transport inte...

Soft proton isolation process for an acoustic charge transport inte...

Implanting impurities in semiconductors and semiconductor implanted...

Wide band-gap semiconductors having low bipolar resistivity and met...

Corrosion prevention of honeycomb core panel construction using ion...

Compound semiconductor single crystals and the method for making th...

Method of manufacturing InP junction FETS and junction HEMTS using...

Method of fabricating a semiconductor optical device

Interstitital doping in III-V semiconductors to avoid or suppress D...

Device having superlattice structure, and method of and apparatus f...

Producing a plasma containing beryllium and beryllium fluoride

Method for the manufacture of optical semiconductor device

Method of manufacturing a heterojunction bipolar transistor

Method of manufacturing devices having superlattice structures

Semiconductor device and method of manufacturing the same

GaAs FET manufacturing process employing channel confining layers

Method of forming a semiconductor laser

Open-tube, benign-environment annealing method for compound semicon...

Patterning method in the manufacture of miniaturized devices

Liquid crystal cell window

Rapid thermal annealing of gallium arsenide with trimethyl arsenic...

Selective intermixing of layered structures composed of thin solid...

Ion implantation and annealing of compound semiconductor layers

Method of treating bodies of III-V compound semiconductor material

Aluminum liftoff masking process and product

Ballistic heterojunction bipolar transistor

Passivation of gallium arsenide by nitrogen implantation

Method of adjusting threshold voltage subsequent to fabrication of...

Patents Applicationslast 30 patents