Laser beam processing-diodes or transistor

Industry

CPC
Y10S148/092

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

Current Industry

Y10S148/092Laser beam processing-diodes or transistor

Industries

Patents Grantslast 30 patents

Information Patent Grant
Method for laser-processing semiconductor device
- Patent number 6,509,212
- Issue date Jan 21, 2003
- Semiconductor Energy Laboratory Co., Ltd.
- Hongyong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for operating an active matrix display device with limited v...
- Patent number 6,096,581
- Issue date Aug 1, 2000
- Semiconductor Energy Laboratory Co., Ltd.
- Hongyong Zhang
- G02 - OPTICS
Information Patent Grant
Method of fabricating solar cells
- Patent number 5,082,791
- Issue date Jan 21, 1992
- Mobil Solar Energy Corporation
- Ronald H. Micheels
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an integrated circuit structure with multiple com...
- Patent number 5,045,501
- Issue date Sep 3, 1991
- Hughes Aircraft Company
- Jan Grinberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Image sensor and manufacturing method for the same
- Patent number 5,043,567
- Issue date Aug 27, 1991
- Semiconductor Energy Laboratory Co., Ltd.
- Mitsunori Sakama
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Image sensor and manufacturing method for the same
- Patent number 5,017,502
- Issue date May 21, 1991
- Semiconductor Energy Laboratory Co., Ltd.
- Mitsunori Sakama
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Image sensor and manufacturing method for the same
- Patent number 4,943,710
- Issue date Jul 24, 1990
- Semiconductor Energy Laboratory Co., Ltd.
- Mitsunori Sakama
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Thermal writing on glass and glass-ceramic substrates
- Patent number 4,847,138
- Issue date Jul 11, 1989
- Corning Glass Works
- Elizabeth A. Boylan
- C03 - GLASS MINERAL OR SLAG WOOL
Information Patent Grant
Method for producing via holes in polymer dielectrics
- Patent number 4,764,485
- Issue date Aug 16, 1988
- General Electric Company
- James A. Loughran
- B29 - WORKING OF PLASTICS WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL
Information Patent Grant
Solar-cell
- Patent number 4,543,444
- Issue date Sep 24, 1985
- Telefunken Electronic GmbH
- Klaus-Dieter Rasch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating a bipolar transistor with a thin base and a...
- Patent number 4,523,370
- Issue date Jun 18, 1985
- NCR Corporation
- Paul A. Sullivan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming energy beam activated conductive regions between...
- Patent number 4,462,150
- Issue date Jul 31, 1984
- Tokyo Shibaura Denki Kabushiki Kaisha
- Hidetaro Nishimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Modified laser-annealing process for improving the quality of elect...
- Patent number 4,436,557
- Issue date Mar 13, 1984
- The United States of America as represented by the United States Department o...
- Richard F. Wood
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making precision doped polysilicon vertical ballast resis...
- Patent number 4,411,708
- Issue date Oct 25, 1983
- TRW Inc.
- Lucien C. Winhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing a semiconductor device
- Patent number 4,403,400
- Issue date Sep 13, 1983
- Fujitsu Limited
- Junji Sakurai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of controlling base contact regions by forming a blocking la...
- Patent number 4,398,962
- Issue date Aug 16, 1983
- Tokyo Shibaura Denki Kabushiki Kaisha
- Mamoru Kanazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of laser annealing of subsurface ion implanted regions
- Patent number 4,379,727
- Issue date Apr 12, 1983
- International Business Machines Corporation
- Howard H. Hansen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device using laser beam cryst...
- Patent number 4,377,902
- Issue date Mar 29, 1983
- VLSI Technology Research Association
- Kazuyoshi Shinada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making Schottky barrier diode by selective beam-crystalli...
- Patent number 4,377,031
- Issue date Mar 22, 1983
- Fujitsu Limited
- Hiroshi Goto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a stacked emitter in a bipolar transistor by selec...
- Patent number 4,377,421
- Issue date Mar 22, 1983
- Hitachi, Ltd.
- Yasuo Wada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing coarse-grain crystalline/mono-crystalline met...
- Patent number 4,372,989
- Issue date Feb 8, 1983
- Siemens Aktiengesellschaft
- Guenther Menzel
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of annealing implanted semiconductors by lasers
- Patent number 4,370,175
- Issue date Jan 25, 1983
- Katz; Bernard B.
- Jeffrey I. Levatter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing alloyed metal contact layers on crystal-orienta...
- Patent number 4,359,486
- Issue date Nov 16, 1982
- Siemens Aktiengesellschaft
- Hubert Patalong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trimming a circuit element layer of an electrical circuit assembly
- Patent number 4,352,005
- Issue date Sep 28, 1982
- Ferranti Limited
- Jonathan L. Evans
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of crystallizing amorphous material with a moving energy beam
- Patent number 4,309,225
- Issue date Jan 5, 1982
- Massachusetts Institute of Technology
- John C. C. Fan
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of producing single-crystal semiconductor films by laser tre...
- Patent number 4,308,078
- Issue date Dec 29, 1981
- Melvin S. Cook
- C30 - CRYSTAL GROWTH
Information Patent Grant
Laser processing technique for fabricating series-connected and tan...
- Patent number 4,292,092
- Issue date Sep 29, 1981
- RCA Corporation
- Joseph J. Hanak
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Laser deformation of semiconductor junctions
- Patent number 4,203,781
- Issue date May 20, 1980
- Bell Telephone Laboratories, Incorporated
- Gabriel L. Miller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming p-n junctions and solar-cells by laser-beam proc...
- Patent number 4,147,563
- Issue date Apr 3, 1979
- The United States of America as represented by the United States Department o...
- Jagdish Narayan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming isolation and device regions due to enhanced diffusion of i...
- Patent number 4,137,100
- Issue date Jan 30, 1979
- Western Electric Company
- Vincent J. Zaleckas
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR

Laser beam processing-diodes or transistor

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method for laser-processing semiconductor device

Method for operating an active matrix display device with limited v...

Method of fabricating solar cells

Method of forming an integrated circuit structure with multiple com...

Image sensor and manufacturing method for the same

Image sensor and manufacturing method for the same

Image sensor and manufacturing method for the same

Thermal writing on glass and glass-ceramic substrates

Method for producing via holes in polymer dielectrics

Solar-cell

Process for fabricating a bipolar transistor with a thin base and a...

Method of forming energy beam activated conductive regions between...

Modified laser-annealing process for improving the quality of elect...

Method of making precision doped polysilicon vertical ballast resis...

Process for producing a semiconductor device

Method of controlling base contact regions by forming a blocking la...

Method of laser annealing of subsurface ion implanted regions

Method of manufacturing semiconductor device using laser beam cryst...

Method of making Schottky barrier diode by selective beam-crystalli...

Method of making a stacked emitter in a bipolar transistor by selec...

Process for producing coarse-grain crystalline/mono-crystalline met...

Method of annealing implanted semiconductors by lasers

Method of producing alloyed metal contact layers on crystal-orienta...

Trimming a circuit element layer of an electrical circuit assembly

Method of crystallizing amorphous material with a moving energy beam

Method of producing single-crystal semiconductor films by laser tre...

Laser processing technique for fabricating series-connected and tan...

Laser deformation of semiconductor junctions

Method for forming p-n junctions and solar-cells by laser-beam proc...

Forming isolation and device regions due to enhanced diffusion of i...