Laser beam treatment of compound devices

Industry

CPC
Y10S148/094

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

Current Industry

Y10S148/094Laser beam treatment of compound devices

Industries

Patents Grantslast 30 patents

Information Patent Grant
Product and process for forming a semiconductor structure on a host...
- Patent number 6,210,479
- Issue date Apr 3, 2001
- International Business Machines Corporation
- Nestor A. Bojarczuk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduction of surface leakage current by surface passivation of CdZn...
- Patent number 6,168,967
- Issue date Jan 2, 2001
- The Regents of the University of California
- Mark A. Hoffbauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a layer and semiconductor substrate
- Patent number 5,897,381
- Issue date Apr 27, 1999
- LSI Logic Corporation
- Sheldon Aronowitz
- B24 - GRINDING POLISHING
Information Patent Grant
Apparatus for rapid thermal processing of a wafer
- Patent number 5,893,952
- Issue date Apr 13, 1999
- LSI Logic Corporation
- Sheldon Aronowitz
- B24 - GRINDING POLISHING
Information Patent Grant
Method of improving the spectral response and dark current characte...
- Patent number 5,840,592
- Issue date Nov 24, 1998
- The United States of America as represented by the Secretary of the Navy
- Stephen D. Russell
- G09 - EDUCATION CRYPTOGRAPHY DISPLAY ADVERTISING SEALS
Information Patent Grant
Rapid thermal processing using a narrowband infrared source and fee...
- Patent number 5,756,369
- Issue date May 26, 1998
- LSI Logic Corporation
- Sheldon Aronowitz
- B24 - GRINDING POLISHING
Information Patent Grant
Method of fabricating semiconductor lasers
- Patent number 5,153,148
- Issue date Oct 6, 1992
- Rohm Co., Ltd.
- Hajime Sakiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for preparing epitaxial compound semiconductor
- Patent number 5,100,832
- Issue date Mar 31, 1992
- Sharp Kabushiki Kaisha
- Masahiko Kitagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doping procedures for semiconductor devices
- Patent number 5,024,967
- Issue date Jun 18, 1991
- AT&T Bell Laboratories
- Rose F. Kopf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried disordering sources in semiconductor structures employing ph...
- Patent number 5,013,684
- Issue date May 7, 1991
- Xerox Corporation
- John E. Epler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor lasers
- Patent number 4,999,841
- Issue date Mar 12, 1991
- Rohm Co., Ltd.
- Hajime Sakiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of in situ photo induced evaporation enhancement of compound...
- Patent number 4,962,057
- Issue date Oct 9, 1990
- Xerox Corporation
- John E. Epler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and making group IIB metal - telluride films and solar cells
- Patent number 4,950,615
- Issue date Aug 21, 1990
- International Solar Electric Technology, Inc.
- Bulent M. Basol
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of growing crystalline layers by vapor phase epitaxy
- Patent number 4,950,621
- Issue date Aug 21, 1990
- Secretary of the State for Defence in Her Majesty's Government of the United...
- Stuart J. Irvine
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of forming 3-D structures using MOVCD with in-situ photoetching
- Patent number 4,933,299
- Issue date Jun 12, 1990
- British Telecommunications public limited company
- Kenneth Durose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making ohmic contact to ferroelectric semiconductors
- Patent number 4,895,812
- Issue date Jan 23, 1990
- GTE Laboratories Incorporated
- Da Y. Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of laser enhanced vapor phase growth for compound semiconductor
- Patent number 4,885,260
- Issue date Dec 5, 1989
- Matsushita Electric Industrial Co., Ltd.
- Yuzaburo Ban
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for epitaxial growth of compound semiconductor using MOCVD w...
- Patent number 4,859,625
- Issue date Aug 22, 1989
- Research Development Corporation of Japan, Junichi Nishizawa and Oki Electric...
- Fumio Matsumoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing masked semiconductor laser
- Patent number 4,855,256
- Issue date Aug 8, 1989
- Ricoh Company, Ltd.
- Hiroshi Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating compound semiconductor laser using selective...
- Patent number 4,843,031
- Issue date Jun 27, 1989
- Matsushita Electric Industrial Co., Ltd.
- Yuzaburo Ban
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Annealing method for III-V deposition
- Patent number 4,835,116
- Issue date May 30, 1989
- Kopin Corporation
- Jhang W. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing via holes in polymer dielectrics
- Patent number 4,764,485
- Issue date Aug 16, 1988
- General Electric Company
- James A. Loughran
- B29 - WORKING OF PLASTICS WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL
Information Patent Grant
Two step rapid thermal anneal of implanted compound semiconductor
- Patent number 4,743,569
- Issue date May 10, 1988
- Texas Instruments Incorporated
- Donald L. Plumton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for the production of a semiconductor laser with tape geome...
- Patent number 4,742,013
- Issue date May 3, 1988
- Louis Menigaux
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Joint for rails
- Patent number 4,728,220
- Issue date Mar 1, 1988
- Bernard J. Navarro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacture of trimmable high value polycrystalline silicon resistors
- Patent number 4,707,909
- Issue date Nov 24, 1987
- Siliconix Incorporated
- Richard A. Blanchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making semiconductor photoelectric conversion device
- Patent number 4,706,376
- Issue date Nov 17, 1987
- Semiconductor Energy Laboratory Co., Ltd.
- Shumpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivation of gallium arsenide by nitrogen implantation
- Patent number 4,706,377
- Issue date Nov 17, 1987
- United Technologies Corporation
- Alexander J. Shuskus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laser-induced chemical vapor deposition of germanium and doped-germ...
- Patent number 4,681,640
- Issue date Jul 21, 1987
- The United States of America as represented by the Secretary of the Army
- Ann E. Stanley
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of integrating infrared sensitive image recording element wi...
- Patent number 4,661,168
- Issue date Apr 28, 1987
- Licentia Patent-Verwaltungs- GmbH
- Horst Maier
- H01 - BASIC ELECTRIC ELEMENTS

Laser beam treatment of compound devices

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Product and process for forming a semiconductor structure on a host...

Reduction of surface leakage current by surface passivation of CdZn...

Method of forming a layer and semiconductor substrate

Apparatus for rapid thermal processing of a wafer

Method of improving the spectral response and dark current characte...

Rapid thermal processing using a narrowband infrared source and fee...

Method of fabricating semiconductor lasers

Process for preparing epitaxial compound semiconductor

Doping procedures for semiconductor devices

Buried disordering sources in semiconductor structures employing ph...

Semiconductor lasers

Method of in situ photo induced evaporation enhancement of compound...

Method and making group IIB metal - telluride films and solar cells

Method of growing crystalline layers by vapor phase epitaxy

Method of forming 3-D structures using MOVCD with in-situ photoetching

Method of making ohmic contact to ferroelectric semiconductors

Method of laser enhanced vapor phase growth for compound semiconductor

Method for epitaxial growth of compound semiconductor using MOCVD w...

Method of manufacturing masked semiconductor laser

Method of fabricating compound semiconductor laser using selective...

Annealing method for III-V deposition

Method for producing via holes in polymer dielectrics

Two step rapid thermal anneal of implanted compound semiconductor

Process for the production of a semiconductor laser with tape geome...

Joint for rails

Manufacture of trimmable high value polycrystalline silicon resistors

Method of making semiconductor photoelectric conversion device

Passivation of gallium arsenide by nitrogen implantation

Laser-induced chemical vapor deposition of germanium and doped-germ...

Method of integrating infrared sensitive image recording element wi...