Lattice strain and defects

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CPC
Y10S148/097

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

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Y10S148/097Lattice strain and defects

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Low defect density/arbitrary lattice constant heteroepitaxial layers
- Patent number 5,810,924
- Issue date Sep 22, 1998
- International Business Machines Corporation
- Francoise Kolmer Legoues
- G02 - OPTICS
Information Patent Grant
Low defect density/arbitrary lattice constant heteroepitaxial layers
- Patent number 5,659,187
- Issue date Aug 19, 1997
- International Business Machines Corporation
- Francoise Kolmer Legoues
- G02 - OPTICS
Information Patent Grant
Surfactant-enhanced epitaxy
- Patent number 5,628,834
- Issue date May 13, 1997
- International Business Machines Corporation
- Matthew W. Copel
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial wafer of gallium arsenide phosphide
- Patent number 5,456,765
- Issue date Oct 10, 1995
- Mitsubishi Kasei Corporation
- Tadashige Sato
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of controlling misfit dislocation
- Patent number 5,395,770
- Issue date Mar 7, 1995
- Shin-Etsu Handotai Co., Ltd.
- Katsuhiko Miki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a monolithic integrated circuit having compound se...
- Patent number 5,356,831
- Issue date Oct 18, 1994
- Eaton Corporation
- Joseph A. Calviello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating highly lattice mismatched quantum well struct...
- Patent number 5,300,794
- Issue date Apr 5, 1994
- GTE Laboratories Incorporated
- Paul Melman
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of making high transconductance heterostructure field effect...
- Patent number 5,298,441
- Issue date Mar 29, 1994
- Motorola, Inc.
- Herbert Goronkin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preparing substrates by annealing epitaxial layers in the form of n...
- Patent number 5,279,687
- Issue date Jan 18, 1994
- British Telecommunications p.l.c.
- Christopher G. Tuppen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained defect-free epitaxial mismatched heterostructures and meth...
- Patent number 5,221,367
- Issue date Jun 22, 1993
- International Business Machines, Corp.
- Matthew F. Chisholm
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic integrated circuit having compound semiconductor layer e...
- Patent number 5,164,359
- Issue date Nov 17, 1992
- Eaton Corporation
- Joseph A. Calviello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic integrated circuit having compound semiconductor layer e...
- Patent number 5,159,413
- Issue date Oct 27, 1992
- Eaton Corporation
- Joseph A. Calviello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Growth of P type Group III-V compound semiconductor on Group IV sem...
- Patent number 5,141,569
- Issue date Aug 25, 1992
- Ford MicroElectronics
- Chris R. Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interstitital doping in III-V semiconductors to avoid or suppress D...
- Patent number 5,139,960
- Issue date Aug 18, 1992
- Xerox Corporation
- James D. Chadi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of GaAs on Si substrates
- Patent number 5,108,947
- Issue date Apr 28, 1992
- Agfa-Gevaert N.V.
- Piet M. Demeester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing dislocations in semiconductors utilizing repeated thermal...
- Patent number 5,091,333
- Issue date Feb 25, 1992
- Massachusetts Institute of Technology
- John C. C. Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective epitaxial growth process flow for semiconductor technologies
- Patent number 5,073,516
- Issue date Dec 17, 1991
- Texas Instruments Incorporated
- Mehrdad M. Moslehi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
InP semiconductor thin film on Si
- Patent number 5,053,835
- Issue date Oct 1, 1991
- Oki Electric Industry Co., Ltd.
- Hideaki Horikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of farbicating highly lattice mismatched quantum well struct...
- Patent number 5,021,360
- Issue date Jun 4, 1991
- GTE Laboratories Incorporated
- Paul Melman
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Heteroepitaxial growth method
- Patent number 5,019,529
- Issue date May 28, 1991
- Fujitsu Limited
- Kanetake Takasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing tilted superlattices
- Patent number 5,013,683
- Issue date May 7, 1991
- The Regents of the University of California
- Pierre M. Petroff
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Epitaxial film growth using low pressure MOCVD
- Patent number 4,994,408
- Issue date Feb 19, 1991
- Motorola Inc.
- Eric S. Johnson
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of making a photosensor using selective epitaxial growth
- Patent number 4,977,096
- Issue date Dec 11, 1990
- Canon Kabushiki Kaisha
- Tetsuya Shimada
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Method of making an article comprising a III/V semiconductor device
- Patent number 4,977,103
- Issue date Dec 11, 1990
- AT&T Bell Laboratories
- Naresh Chand
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of forming epitaxial layers
- Patent number 4,975,388
- Issue date Dec 4, 1990
- U.S. Philips Corporation
- Christophe Guedon
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of making a gallium arsenide phosphide-, mixed crystal-epita...
- Patent number 4,968,642
- Issue date Nov 6, 1990
- Mitsubishi Chemical Industries, Ltd.
- Hisanori Fujita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating an INP semiconductor thin film on silicon
- Patent number 4,965,224
- Issue date Oct 23, 1990
- Oki Electric Industry Co., Ltd.
- Hideaki Horikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making an epitaxial gallium arsenide semiconductor wafer...
- Patent number 4,963,508
- Issue date Oct 16, 1990
- Daido Tokushuko Kabushiki Kaisha
- Masayoshi Umeno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a defect-free semiconductor layer on insulator
- Patent number 4,962,051
- Issue date Oct 9, 1990
- Motorola, Inc.
- H. Ming Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Homogenization anneal of II-VI compounds
- Patent number 4,960,728
- Issue date Oct 2, 1990
- Texas Instruments Incorporated
- Herbert F. Schaake
- H01 - BASIC ELECTRIC ELEMENTS

Lattice strain and defects

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Low defect density/arbitrary lattice constant heteroepitaxial layers

Low defect density/arbitrary lattice constant heteroepitaxial layers

Surfactant-enhanced epitaxy

Epitaxial wafer of gallium arsenide phosphide

Method of controlling misfit dislocation

Method of making a monolithic integrated circuit having compound se...

Method of fabricating highly lattice mismatched quantum well struct...

Method of making high transconductance heterostructure field effect...

Preparing substrates by annealing epitaxial layers in the form of n...

Strained defect-free epitaxial mismatched heterostructures and meth...

Monolithic integrated circuit having compound semiconductor layer e...

Monolithic integrated circuit having compound semiconductor layer e...

Growth of P type Group III-V compound semiconductor on Group IV sem...

Interstitital doping in III-V semiconductors to avoid or suppress D...

Integration of GaAs on Si substrates

Reducing dislocations in semiconductors utilizing repeated thermal...

Selective epitaxial growth process flow for semiconductor technologies

InP semiconductor thin film on Si

Method of farbicating highly lattice mismatched quantum well struct...

Heteroepitaxial growth method

Method for growing tilted superlattices

Epitaxial film growth using low pressure MOCVD

Method of making a photosensor using selective epitaxial growth

Method of making an article comprising a III/V semiconductor device

Method of forming epitaxial layers

Method of making a gallium arsenide phosphide-, mixed crystal-epita...

Process for fabricating an INP semiconductor thin film on silicon

Method of making an epitaxial gallium arsenide semiconductor wafer...

Method of forming a defect-free semiconductor layer on insulator

Homogenization anneal of II-VI compounds

Patents Applicationslast 30 patents