Liquid Phase Epitaxy, LPE

Industry

CPC
Y10S148/101

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

Current Industry

Y10S148/101Liquid Phase Epitaxy, LPE

Industries

Patents Grantslast 30 patents

Information Patent Grant
Epitaxial growth of germanium photodetector for CMOS imagers
- Patent number 7,008,813
- Issue date Mar 7, 2006
- Sharp Laboratories of America, Inc.
- Jong-Jan Lee
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Method of manufacturing a light-emitting semiconductor device subst...
- Patent number 5,401,684
- Issue date Mar 28, 1995
- Shin-Etsu Handatai Co., Ltd.
- Masato Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing silicon dioxide film which prevents escape of...
- Patent number 5,326,720
- Issue date Jul 5, 1994
- Nippon Sheet Glass Co., Ltd.
- Takuji Goda
- C03 - GLASS MINERAL OR SLAG WOOL
Information Patent Grant
Forming thin liquid phase epitaxial layers
- Patent number 5,223,079
- Issue date Jun 29, 1993
- Motorola, Inc.
- Kwong-Hang Leung
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial growth method
- Patent number 5,185,288
- Issue date Feb 9, 1993
- Hewlett-Packard Company
- Louis W. Cook
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hetero-epitaxial liquid phase growth method
- Patent number 5,130,270
- Issue date Jul 14, 1992
- Mitsubishi Denki Kabushiki Kaisha
- Masatoshi Kobayashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Device for liquid-phase thin film epitaxy
- Patent number 5,068,516
- Issue date Nov 26, 1991
- SamSung Electronics Co., Ltd.
- Kim Ki-Joon
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and manufacturing a laser diode with buried active layer
- Patent number 4,963,507
- Issue date Oct 16, 1990
- Siemens Aktiengesellschaft
- Markus-Christian Amann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for II-VI compound epitaxy
- Patent number 4,920,067
- Issue date Apr 24, 1990
- Jamie Knapp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for liquid-phase thin film epitaxy
- Patent number 4,918,029
- Issue date Apr 17, 1990
- Samsung Electronics Co., Ltd.
- Ki-Joon Kim
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial substrate for high-intensity led, and method of manufactu...
- Patent number 4,902,356
- Issue date Feb 20, 1990
- Mitsubishi Monsanto Chemical Company
- Masahiro Noguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for making monocrystalline HGCDTE layers
- Patent number 4,872,943
- Issue date Oct 10, 1989
- Selenia Industrie Elettroniche Associate S.p.A.
- Sergio Bernardi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Interrupted liquid phase epitaxy process
- Patent number 4,859,628
- Issue date Aug 22, 1989
- Northern Telecom Limited
- Douglas G. Knight
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Growth of semi-insulating indium phosphide by liquid phase epitaxy
- Patent number 4,849,373
- Issue date Jul 18, 1989
- Northern Telecom Limited
- D. Gordon Knight
- H01 - BASIC ELECTRIC ELEMENTS

Liquid Phase Epitaxy, LPE

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Epitaxial growth of germanium photodetector for CMOS imagers

Method of manufacturing a light-emitting semiconductor device subst...

Method for producing silicon dioxide film which prevents escape of...

Forming thin liquid phase epitaxial layers

Epitaxial growth method

Hetero-epitaxial liquid phase growth method

Device for liquid-phase thin film epitaxy

Method and manufacturing a laser diode with buried active layer

Process for II-VI compound epitaxy

Method for liquid-phase thin film epitaxy

Epitaxial substrate for high-intensity led, and method of manufactu...

Process for making monocrystalline HGCDTE layers

Interrupted liquid phase epitaxy process

Growth of semi-insulating indium phosphide by liquid phase epitaxy