Making of internal connections, substrate contacts

Industry

CPC
H01L21/743

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/743Making of internal connections, substrate contacts

Industries

Patents Grantslast 30 patents

Information Patent Grant
3D semiconductor device and structure with metal layers
- Patent number 11,967,583
- Issue date Apr 23, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device and structure with metal layers
- Patent number 11,961,827
- Issue date Apr 16, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recessed local interconnect formed over self-aligned double diffusi...
- Patent number 11,955,369
- Issue date Apr 9, 2024
- International Business Machines Corporation
- Lan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Parasitic capacitance reduction in GaN devices
- Patent number 11,929,364
- Issue date Mar 12, 2024
- MACOM Technology Solutions Holdings, Inc.
- Gabriel R. Cueva
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device and structure with bonding
- Patent number 11,923,230
- Issue date Mar 5, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Grant
3D semiconductor device and structure with metal layers
- Patent number 11,916,045
- Issue date Feb 27, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside power rail integration
- Patent number 11,915,966
- Issue date Feb 27, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device and structure with memory
- Patent number 11,901,210
- Issue date Feb 13, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures and methods for trench isolation
- Patent number 11,894,381
- Issue date Feb 6, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuan-Jung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced ESR in trench capacitor
- Patent number 11,888,021
- Issue date Jan 30, 2024
- Texas Instruments Incorporated
- Jing Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device and structure with metal layers and a conne...
- Patent number 11,881,443
- Issue date Jan 23, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device and structure with single-crystal layers
- Patent number 11,876,011
- Issue date Jan 16, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for producing a 3D semiconductor device and structure with m...
- Patent number 11,862,503
- Issue date Jan 2, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor arrangement and method for making
- Patent number 11,854,942
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Josh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch profile control of interconnect structures
- Patent number 11,854,873
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu Lun Ke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for producing a 3D semiconductor device and structure with...
- Patent number 11,854,857
- Issue date Dec 26, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating field-effect transistors with interleaved source and dr...
- Patent number 11,842,947
- Issue date Dec 12, 2023
- Skyworks Solutions, Inc.
- Hailing Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried contact through fin-to-fin space for vertical transport fiel...
- Patent number 11,830,774
- Issue date Nov 28, 2023
- International Business Machines Corporation
- Junli Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device and structure with bonding
- Patent number 11,830,757
- Issue date Nov 28, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Grant
Direct-bonded native interconnects and active base die
- Patent number 11,823,906
- Issue date Nov 21, 2023
- Xcelsis Corporation
- Javier A. Delacruz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried metal for FinFET device and method
- Patent number 11,810,811
- Issue date Nov 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Lei-Chun Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for producing a 3D semiconductor device and structure with...
- Patent number 11,804,396
- Issue date Oct 31, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Grant
Reducing RC delay in semiconductor devices
- Patent number 11,804,439
- Issue date Oct 31, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Gulbagh Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned buried power rail cap for semiconductor devices
- Patent number 11,804,436
- Issue date Oct 31, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor isolation structure and method of making the same
- Patent number 11,798,836
- Issue date Oct 24, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsung-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 11,798,886
- Issue date Oct 24, 2023
- Renesas Electronics Corporation
- Hirokazu Sayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device and structure with bonding
- Patent number 11,784,082
- Issue date Oct 10, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device and structure with metal layers
- Patent number 11,784,169
- Issue date Oct 10, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device for sequencing
- Patent number 11,774,400
- Issue date Oct 3, 2023
- Illumina, Inc.
- Boyan Boyanov
- G01 - MEASURING TESTING
Information Patent Grant
Buried power rail contact formation
- Patent number 11,776,841
- Issue date Oct 3, 2023
- Imec VZW
- Zheng Tao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS
- Publication number 20240128237
- Publication date Apr 18, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH MEMORY
- Publication number 20240128116
- Publication date Apr 18, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS AND A CONNE...
- Publication number 20240128165
- Publication date Apr 18, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED ESR IN TRENCH CAPACITOR
- Publication number 20240120368
- Publication date Apr 11, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Jing Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH SINGLE-CRYSTAL LAYERS
- Publication number 20240112942
- Publication date Apr 4, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH MEMORY
- Publication number 20240105490
- Publication date Mar 28, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Application
FIELD EFFECT TRANSISTOR WITH ADJUSTABLE EFFECTIVE GATE LENGTH
- Publication number 20240097029
- Publication date Mar 21, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Nan Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ARRANGEMENT AND METHOD FOR MAKING
- Publication number 20240087989
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Josh LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCAL ENLARGED VIA-TO-BACKSIDE POWER RAIL
- Publication number 20240079316
- Publication date Mar 7, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL STRUCTURED BURIED RAIL
- Publication number 20240079333
- Publication date Mar 7, 2024
- International Business Machines Corporation
- Huai Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH BONDING
- Publication number 20240055291
- Publication date Feb 15, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Application
SELF-ALIGNED BURIED POWER RAIL CAP FOR SEMICONDUCTOR DEVICES
- Publication number 20240030139
- Publication date Jan 25, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240030292
- Publication date Jan 25, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- CHIA-CHENG HO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH CONTACTS HAVING DIFFERENT DIMENSIONS AND...
- Publication number 20240006227
- Publication date Jan 4, 2024
- NANYA TECHNOLOGY CORPORATION
- TSE-YAO HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming a Buried Metal Line in a Semiconductor Substrate
- Publication number 20240006228
- Publication date Jan 4, 2024
- IMEC vzw
- Boon Teik Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR PRODUCING A 3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH...
- Publication number 20230420283
- Publication date Dec 28, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS
- Publication number 20230395572
- Publication date Dec 7, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING SEMICONDUCTOR DEVICE HAVING BURIED BIAS PAD
- Publication number 20230395606
- Publication date Dec 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jian WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH BONDING
- Publication number 20230386886
- Publication date Nov 30, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE INCLUDING POWER DISTRIBUTION...
- Publication number 20230386890
- Publication date Nov 30, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR A LOGIC DEVICE AND ANOTHER DEVICE
- Publication number 20230378258
- Publication date Nov 23, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING RC DELAY IN SEMICONDUCTOR DEVICES
- Publication number 20230378071
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Gulbagh Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCH PROFILE CONTROL OF INTERCONNECT STRUCTURES
- Publication number 20230377963
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu Lun KE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Buried Metal for FinFET Device and Method
- Publication number 20230377941
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Lei-Chun Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CHIP HAVING A BURIED POWER RAIL
- Publication number 20230361041
- Publication date Nov 9, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Marcus Johannes Henricus VAN DAL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20230352339
- Publication date Nov 2, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Te-Hsin Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A BODY CONTACT REGION AND METHOD OF...
- Publication number 20230352536
- Publication date Nov 2, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Vvss Satyasuresh CHOPPALLI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICES AND STRUCTURES WITH AT LEAST TWO SINGLE-CR...
- Publication number 20230352333
- Publication date Nov 2, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH SINGLE-CRYSTAL LAYERS
- Publication number 20230343632
- Publication date Oct 26, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS AND A CONNE...
- Publication number 20230343679
- Publication date Oct 26, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS

Making of internal connections, substrate contacts

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

3D semiconductor device and structure with metal layers

3D semiconductor device and structure with metal layers

Recessed local interconnect formed over self-aligned double diffusi...

Parasitic capacitance reduction in GaN devices

3D semiconductor device and structure with bonding

3D semiconductor device and structure with metal layers

Backside power rail integration

3D semiconductor device and structure with memory

Structures and methods for trench isolation

Reduced ESR in trench capacitor

3D semiconductor device and structure with metal layers and a conne...

3D semiconductor device and structure with single-crystal layers

Method for producing a 3D semiconductor device and structure with m...

Semiconductor arrangement and method for making

Etch profile control of interconnect structures

Methods for producing a 3D semiconductor device and structure with...

Fabricating field-effect transistors with interleaved source and dr...

Buried contact through fin-to-fin space for vertical transport fiel...

3D semiconductor device and structure with bonding

Direct-bonded native interconnects and active base die

Buried metal for FinFET device and method

Methods for producing a 3D semiconductor device and structure with...

Reducing RC delay in semiconductor devices

Self-aligned buried power rail cap for semiconductor devices

Semiconductor isolation structure and method of making the same

Semiconductor device and method of manufacturing the same

3D semiconductor device and structure with bonding

3D semiconductor device and structure with metal layers

Device for sequencing

Buried power rail contact formation

Patents Applicationslast 30 patents

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH MEMORY

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS AND A CONNE...

REDUCED ESR IN TRENCH CAPACITOR

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH SINGLE-CRYSTAL LAYERS

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH MEMORY

FIELD EFFECT TRANSISTOR WITH ADJUSTABLE EFFECTIVE GATE LENGTH

SEMICONDUCTOR ARRANGEMENT AND METHOD FOR MAKING

LOCAL ENLARGED VIA-TO-BACKSIDE POWER RAIL

DUAL STRUCTURED BURIED RAIL

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH BONDING

SELF-ALIGNED BURIED POWER RAIL CAP FOR SEMICONDUCTOR DEVICES

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE WITH CONTACTS HAVING DIFFERENT DIMENSIONS AND...

Method for Forming a Buried Metal Line in a Semiconductor Substrate

METHODS FOR PRODUCING A 3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH...

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS

METHOD OF MAKING SEMICONDUCTOR DEVICE HAVING BURIED BIAS PAD

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH BONDING

3D SEMICONDUCTOR DEVICE AND STRUCTURE INCLUDING POWER DISTRIBUTION...

METHOD AND STRUCTURE FOR A LOGIC DEVICE AND ANOTHER DEVICE

REDUCING RC DELAY IN SEMICONDUCTOR DEVICES

ETCH PROFILE CONTROL OF INTERCONNECT STRUCTURES

Buried Metal for FinFET Device and Method

INTEGRATED CHIP HAVING A BURIED POWER RAIL

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

SEMICONDUCTOR DEVICE INCLUDING A BODY CONTACT REGION AND METHOD OF...

3D SEMICONDUCTOR DEVICES AND STRUCTURES WITH AT LEAST TWO SINGLE-CR...

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH SINGLE-CRYSTAL LAYERS

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS AND A CONNE...