Material includes an oxide or a nitride

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GPHYSICS G11Information storage G11CSTATIC STORES G11C2213/00Indexing scheme relating to G11C13/00 for features not covered by this group

Current Industry

G11C2213/34Material includes an oxide or a nitride

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Resistive random access memory device with three-dimensional cross-...
- Patent number 11,972,796
- Issue date Apr 30, 2024
- Kioxia Corporation
- Kikuko Sugimae
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive random access memory device with three-dimensional cross-...
- Patent number 11,495,292
- Issue date Nov 8, 2022
- Kioxia Corporation
- Kikuko Sugimae
- G11 - INFORMATION STORAGE
Information Patent Grant
Thin film based 1T-1R cell with resistive random access memory belo...
- Patent number 11,393,526
- Issue date Jul 19, 2022
- Intel Corporation
- Ravi Pillarisetty
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive random access memory device with three-dimensional cross-...
- Patent number 10,971,225
- Issue date Apr 6, 2021
- TOSHIBA MEMORY CORPORATION
- Kikuko Sugimae
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-terminal electronic charge resistance switching device
- Patent number 10,950,790
- Issue date Mar 16, 2021
- National Technology & Engineering Solutions of Sandia, LLC
- Matthew Marinella
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold switch for memory
- Patent number 10,943,952
- Issue date Mar 9, 2021
- SanDisk Technologies LLC
- Federico Nardi
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory systems and memory programming methods
- Patent number 10,937,493
- Issue date Mar 2, 2021
- Micron Technology, Inc.
- Makoto Kitagawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Conductive bridge random access memory (CBRAM) devices with low the...
- Patent number 10,868,246
- Issue date Dec 15, 2020
- Intel Corporation
- Elijah V. Karpov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory apparatus
- Patent number 10,840,444
- Issue date Nov 17, 2020
- Tsinghua University
- Ji-Wei Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Operation method of resistive memory device
- Patent number 10,797,236
- Issue date Oct 6, 2020
- Seoul National University R&DB Foundation
- Byung-Gook Park
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Variable resistance memory device and operating method thereof
- Patent number 10,770,139
- Issue date Sep 8, 2020
- Korea Research Institute of Chemical Technology
- Gun Hwan Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Hybrid memory devices
- Patent number 10,714,179
- Issue date Jul 14, 2020
- Hewlett-Packard Development Company, L.P.
- Ning Ge
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device
- Patent number 10,658,038
- Issue date May 19, 2020
- TOSHIBA MEMORY CORPORATION
- Kunifumi Suzuki
- G11 - INFORMATION STORAGE
Information Patent Grant
Voltage sensing type of matrix multiplication method for neuromorph...
- Patent number 10,635,398
- Issue date Apr 28, 2020
- Macronix International Co., Ltd.
- Yu-Yu Lin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Switching block configuration bit comprising a non-volatile memory...
- Patent number 10,541,025
- Issue date Jan 21, 2020
- Crossbar, Inc.
- Hagop Nazarian
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory structure for use in resistive random access memory devices...
- Patent number 10,529,921
- Issue date Jan 7, 2020
- Australian Advanced Materials Pty Ltd
- Dewei Chu
- G11 - INFORMATION STORAGE
Information Patent Grant
Crossbar arrays for calculating matrix multiplication
- Patent number 10,497,440
- Issue date Dec 3, 2019
- Hewlett Packard Enterprise Development LP
- Miao Hu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Oxide memory resistor including semiconductor nanoparticles
- Patent number 10,475,994
- Issue date Nov 12, 2019
- UCL Business plc
- Anthony Joseph Kenyon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory device with three-dimensional cross-...
- Patent number 10,410,717
- Issue date Sep 10, 2019
- TOSHIBA MEMORY CORPORATION
- Kikuko Sugimae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for writing, reading and erasing data of phase change memory...
- Patent number 10,304,533
- Issue date May 28, 2019
- Tsinghua University
- Ji-Wei Hou
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device
- Patent number 10,217,514
- Issue date Feb 26, 2019
- TOSHIBA MEMORY CORPORATION
- Kunifumi Suzuki
- G11 - INFORMATION STORAGE
Information Patent Grant
Variable resistance element and memory device
- Patent number 10,164,180
- Issue date Dec 25, 2018
- TOSHIBA MEMORY CORPORATION
- Hiromichi Kuriyama
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory systems and memory programming methods
- Patent number 10,121,539
- Issue date Nov 6, 2018
- Micron Technology, Inc.
- Makoto Kitagawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods and apparatus for three-dimensional nonvolatile memory
- Patent number 10,109,680
- Issue date Oct 23, 2018
- SanDisk Technologies LLC
- Sebastian J. M. Wicklein
- G11 - INFORMATION STORAGE
Information Patent Grant
Switching block configuration bit comprising a non-volatile memory...
- Patent number 10,096,362
- Issue date Oct 9, 2018
- Crossbar, Inc.
- Hagop Nazarian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory devices and arrays
- Patent number 10,096,651
- Issue date Oct 9, 2018
- Hewlett Packard Enterprise Development LP
- Jianhua Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory element
- Patent number 10,050,156
- Issue date Aug 14, 2018
- Opto Tech Corporation
- Yen-Kai Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Switched memristor analog tuning
- Patent number 10,026,474
- Issue date Jul 17, 2018
- Hewlett Packard Enterprise Development LP
- Brent Buchanan
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile resistance-switching thin film devices
- Patent number 9,905,760
- Issue date Feb 27, 2018
- The Trustees of the University of Pennsylvania
- I-Wei Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile resistance change element
- Patent number 9,865,809
- Issue date Jan 9, 2018
- TOSHIBA MEMORY CORPORATION
- Hidenori Miyagawa
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
STRUCTURES FOR THREE-TERMINAL MEMORY CELLS
- Publication number 20240194255
- Publication date Jun 13, 2024
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Desmond Jia Jun LOY
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH THREE-DIMENSIONAL CROSS-...
- Publication number 20230024213
- Publication date Jan 26, 2023
- KIOXIA Corporation
- Kikuko SUGIMAE
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH THREE-DIMENSIONAL CROSS-...
- Publication number 20210264976
- Publication date Aug 26, 2021
- Toshiba Memory Corporation
- Kikuko SUGIMAE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THRESHOLD SWITCH FOR MEMORY
- Publication number 20200388650
- Publication date Dec 10, 2020
- SANDISK TECHNOLOGIES LLC
- Federico Nardi
- G11 - INFORMATION STORAGE
Information Patent Application
THIN FILM BASED 1T-1R CELL WITH RESISTIVE RANDOM ACCESS MEMORY BELO...
- Publication number 20190385677
- Publication date Dec 19, 2019
- Intel Corporation
- Ravi Pillarisetty
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH THREE-DIMENSIONAL CROSS-...
- Publication number 20190362786
- Publication date Nov 28, 2019
- Toshiba Memory Corporation
- Kikuko SUGIMAE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20190295643
- Publication date Sep 26, 2019
- Toshiba Memory Corporation
- Takayuki TSUKAMOTO
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY DEVICE AND OPERATION METHOD THEREOF
- Publication number 20190165268
- Publication date May 30, 2019
- Seoul National University R&DB Foundation
- Byung-Gook Park
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20190156888
- Publication date May 23, 2019
- Toshiba Memory Corporation
- Kunifumi SUZUKI
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Systems and Memory Programming Methods
- Publication number 20190066784
- Publication date Feb 28, 2019
- Micron Technology, Inc.
- Makoto Kitagawa
- G11 - INFORMATION STORAGE
Information Patent Application
SWITCHING BLOCK CONFIGURATION BIT COMPRISING A NON-VOLATILE MEMORY...
- Publication number 20190027219
- Publication date Jan 24, 2019
- Crossbar, Inc.
- Hagop Nazarian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR WRITING, READING AND ERASING DATA OF PHASE CHANGE MEMORY...
- Publication number 20180342296
- Publication date Nov 29, 2018
- TSINGHUA UNIVERSITY
- JI-WEI HOU
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE CHANGE MEMORY APPARATUS
- Publication number 20180342673
- Publication date Nov 29, 2018
- TSINGHUA UNIVERSITY
- JI-WEI HOU
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20180301190
- Publication date Oct 18, 2018
- Toshiba Memory Corporation
- Kunifumi SUZUKI
- G11 - INFORMATION STORAGE
Information Patent Application
CROSSBAR ARRAYS FOR CALCULATING MATRIX MULTIPLICATION
- Publication number 20180301189
- Publication date Oct 18, 2018
- HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
- Miao Hu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY STRUCTURE FOR USE IN RESISTIVE RANDOM ACCESS MEMORY DEVICES...
- Publication number 20180175291
- Publication date Jun 21, 2018
- Australian Advanced Materials Pty Ltd
- Dewei CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIABLE RESISTANCE ELEMENT AND MEMORY DEVICE
- Publication number 20180145251
- Publication date May 24, 2018
- Toshiba Memory Corporation
- Hiromichi KURIYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SWITCH DEVICE AND STORAGE UNIT
- Publication number 20170316822
- Publication date Nov 2, 2017
- Sony Semiconductor Solutions Corporation
- Hiroaki SEI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE
- Publication number 20170256312
- Publication date Sep 7, 2017
- Kabushiki Kaisha Toshiba
- Kikuko SUGIMAE
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTANCE RANDOM ACCESS MEMORY DEVICE AND METHOD FOR OPERATING SAME
- Publication number 20170256310
- Publication date Sep 7, 2017
- Kabushiki Kaisha Toshiba
- Yusuke ARAYASHIKI
- G11 - INFORMATION STORAGE
Information Patent Application
SWITCHED MEMRISTOR ANALOG TUNING
- Publication number 20170148513
- Publication date May 25, 2017
- HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
- Brent Buchanan
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY
- Publication number 20160351256
- Publication date Dec 1, 2016
- University of Massachusetts
- Qiangfei Xia
- G11 - INFORMATION STORAGE
Information Patent Application
OXIDE MEMORY RESISTOR INCLUDING SEMICONDUCTOR NANOPARTICLES
- Publication number 20140291602
- Publication date Oct 2, 2014
- UCL BUSINESS PLC
- Anthony Joseph Kenyon
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY ELEMENT
- Publication number 20140284546
- Publication date Sep 25, 2014
- Kabushiki Kaisha Toshiba
- Tomotaka ARIGA
- G11 - INFORMATION STORAGE
Information Patent Application
TWO-TERMINAL MEMORY WITH INTRINSIC RECTIFYING CHARACTERISTIC
- Publication number 20140269002
- Publication date Sep 18, 2014
- Crossbar, Inc.
- Sung Hyun JO
- G11 - INFORMATION STORAGE
Information Patent Application
Nonvolatile resistive memory element with an oxygen-gettering layer
- Publication number 20140268993
- Publication date Sep 18, 2014
- INTERMOLECULAR INC.
- Tony P. Chiang
- G11 - INFORMATION STORAGE
Information Patent Application
Three-Dimensional Array of Re-Programmable Non-Volatile Memory Elem...
- Publication number 20140192595
- Publication date Jul 10, 2014
- SanDisk 3D LLC
- George Samachisa
- B82 - NANO-TECHNOLOGY
Information Patent Application
Multi-Level Memory Array Having Resistive Elements For Multi-Bit Da...
- Publication number 20140177315
- Publication date Jun 26, 2014
- INTERMOLECULAR INC.
- Dipankar Pramanik
- G11 - INFORMATION STORAGE
Information Patent Application
HYBRID CIRCUIT OF NITRIDE-BASED TRANSISTOR AND MEMRISTOR
- Publication number 20140166957
- Publication date Jun 19, 2014
- Hewlett-Packard Development Company, L.P.
- Jianhua Yang
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE MEMORY CELL COMPRISING A DIODE AND A RESISTANCE-SWITCHI...
- Publication number 20140166968
- Publication date Jun 19, 2014
- SanDisk 3D LLC
- Scott Brad Herner
- G11 - INFORMATION STORAGE

Material includes an oxide or a nitride

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Resistive random access memory device with three-dimensional cross-...

Resistive random access memory device with three-dimensional cross-...

Thin film based 1T-1R cell with resistive random access memory belo...

Resistive random access memory device with three-dimensional cross-...

Two-terminal electronic charge resistance switching device

Threshold switch for memory

Memory systems and memory programming methods

Conductive bridge random access memory (CBRAM) devices with low the...

Phase change memory apparatus

Operation method of resistive memory device

Variable resistance memory device and operating method thereof

Hybrid memory devices

Semiconductor memory device

Voltage sensing type of matrix multiplication method for neuromorph...

Switching block configuration bit comprising a non-volatile memory...

Memory structure for use in resistive random access memory devices...

Crossbar arrays for calculating matrix multiplication

Oxide memory resistor including semiconductor nanoparticles

Resistive random access memory device with three-dimensional cross-...

Method for writing, reading and erasing data of phase change memory...

Semiconductor memory device

Variable resistance element and memory device

Memory systems and memory programming methods

Methods and apparatus for three-dimensional nonvolatile memory

Switching block configuration bit comprising a non-volatile memory...

Resistive memory devices and arrays

Resistive memory element

Switched memristor analog tuning

Non-volatile resistance-switching thin film devices

Nonvolatile resistance change element

Patents Applicationslast 30 patents

STRUCTURES FOR THREE-TERMINAL MEMORY CELLS

RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH THREE-DIMENSIONAL CROSS-...

RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH THREE-DIMENSIONAL CROSS-...

THRESHOLD SWITCH FOR MEMORY

THIN FILM BASED 1T-1R CELL WITH RESISTIVE RANDOM ACCESS MEMORY BELO...

RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH THREE-DIMENSIONAL CROSS-...

SEMICONDUCTOR MEMORY DEVICE

RESISTIVE MEMORY DEVICE AND OPERATION METHOD THEREOF

SEMICONDUCTOR MEMORY DEVICE

Memory Systems and Memory Programming Methods

SWITCHING BLOCK CONFIGURATION BIT COMPRISING A NON-VOLATILE MEMORY...

METHOD FOR WRITING, READING AND ERASING DATA OF PHASE CHANGE MEMORY...

PHASE CHANGE MEMORY APPARATUS

SEMICONDUCTOR MEMORY DEVICE

CROSSBAR ARRAYS FOR CALCULATING MATRIX MULTIPLICATION

MEMORY STRUCTURE FOR USE IN RESISTIVE RANDOM ACCESS MEMORY DEVICES...

VARIABLE RESISTANCE ELEMENT AND MEMORY DEVICE

SWITCH DEVICE AND STORAGE UNIT

MEMORY DEVICE

RESISTANCE RANDOM ACCESS MEMORY DEVICE AND METHOD FOR OPERATING SAME

SWITCHED MEMRISTOR ANALOG TUNING

RESISTIVE MEMORY

OXIDE MEMORY RESISTOR INCLUDING SEMICONDUCTOR NANOPARTICLES

MEMORY ELEMENT

TWO-TERMINAL MEMORY WITH INTRINSIC RECTIFYING CHARACTERISTIC

Nonvolatile resistive memory element with an oxygen-gettering layer

Three-Dimensional Array of Re-Programmable Non-Volatile Memory Elem...

Multi-Level Memory Array Having Resistive Elements For Multi-Bit Da...

HYBRID CIRCUIT OF NITRIDE-BASED TRANSISTOR AND MEMRISTOR

NONVOLATILE MEMORY CELL COMPRISING A DIODE AND A RESISTANCE-SWITCHI...