Memory cells which are electrically programmed to cause a change in resistance

Industry

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G11C17/165

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Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C17/00Read-only memories programmable only once Semi-permanent stores

Current Industry

G11C17/165Memory cells which are electrically programmed to cause a change in resistance

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Bank design with differential bulk bias in eFuse array
- Patent number 12,217,798
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device data loss prevention
- Patent number 12,183,390
- Issue date Dec 31, 2024
- Samsung Electronics Co., Ltd.
- Hijung Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Anti-fuse sensing device and operation method thereof
- Patent number 12,185,530
- Issue date Dec 31, 2024
- NANYA TECHNOLOGY CORPORATION
- Chih-Hang Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
MIM eFuse memory devices and fabrication method thereof
- Patent number 12,176,049
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
One-transistor (1T) one-time programmable (OTP) anti-fuse bitcell w...
- Patent number 12,167,590
- Issue date Dec 10, 2024
- Synopsys, Inc.
- Andrew Edward Horch
- G11 - INFORMATION STORAGE
Information Patent Grant
eFUSE programming feedback circuits and methods
- Patent number 12,150,298
- Issue date Nov 19, 2024
- Texas Instruments Incorporated
- Anand Seshadri
- G11 - INFORMATION STORAGE
Information Patent Grant
Delay of initialization at memory die
- Patent number 12,131,040
- Issue date Oct 29, 2024
- Micron Technology, Inc.
- James S. Rehmeyer
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Multiple stack high voltage circuit for memory
- Patent number 12,094,558
- Issue date Sep 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Grant
Layout method by buried rail for centralized anti-fuse read current
- Patent number 11,985,819
- Issue date May 14, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor structure
- Patent number 11,923,373
- Issue date Mar 5, 2024
- United Microelectronics Corp.
- Bo Tao
- G11 - INFORMATION STORAGE
Information Patent Grant
Anti-fuse memory and control method thereof
- Patent number 11,894,082
- Issue date Feb 6, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Rumin Ji
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and operating method thereof
- Patent number 11,881,277
- Issue date Jan 23, 2024
- Samsung Electronics Co., Ltd.
- Sungrae Kim
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor memory devices with different doping types
- Patent number 11,856,761
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Sheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory structure and fabrication method thereof
- Patent number 11,854,632
- Issue date Dec 26, 2023
- United Microelectronics Corp.
- Kuo-Hsing Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Substrate, printing apparatus, and manufacturing method
- Patent number 11,837,301
- Issue date Dec 5, 2023
- Canon Kabushiki Kaisha
- Masashi Fukuda
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuit for sensing antifuse of DRAMs
- Patent number 11,830,540
- Issue date Nov 28, 2023
- NANYA TECHNOLOGY CORPORATION
- Chih-Jen Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuit for detecting state of anti-fuse storage unit and memory de...
- Patent number 11,817,163
- Issue date Nov 14, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Rumin Ji
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory devices and systems with read-only memory featu...
- Patent number 11,769,561
- Issue date Sep 26, 2023
- Micron Technology, Inc.
- Timothy B. Cowles
- G11 - INFORMATION STORAGE
Information Patent Grant
Bank design with differential bulk bias in eFuse array
- Patent number 11,756,622
- Issue date Sep 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
MIM efuse memory devices and fabrication method thereof
- Patent number 11,756,640
- Issue date Sep 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Liquid discharge head and method of manufacturing the same
- Patent number 11,749,363
- Issue date Sep 5, 2023
- Canon Kabushiki Kaisha
- Hiroshi Yamada
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor circuit and semiconductor device for determining stat...
- Patent number 11,749,364
- Issue date Sep 5, 2023
- NANYA TECHNOLOGY CORPORATION
- Wu-Der Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory devices and systems with volatile memory featur...
- Patent number 11,742,028
- Issue date Aug 29, 2023
- Micron Technology, Inc.
- Timothy B. Cowles
- G11 - INFORMATION STORAGE
Information Patent Grant
One-time programmable memory read-write circuit
- Patent number 11,682,466
- Issue date Jun 20, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Xin Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Multiple stack high voltage circuit for memory
- Patent number 11,682,433
- Issue date Jun 20, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Grant
Re-programmable integrated circuit architecture and method of manuf...
- Patent number 11,670,390
- Issue date Jun 6, 2023
- Texas Instruments Incorporated
- Michael Allen Ball
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device including anti-fuse cell
- Patent number 11,600,626
- Issue date Mar 7, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuit including eFuse cell
- Patent number 11,569,248
- Issue date Jan 31, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Sheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for reducing resistance in anti-fuse cell
- Patent number 11,527,541
- Issue date Dec 13, 2022
- TAIWAN SEMICONDUCTOH MANUFACTUHING COMPANY LIMITED
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory devices and systems with volatile memory featur...
- Patent number 11,495,299
- Issue date Nov 8, 2022
- Micron Technology, Inc.
- Timothy B. Cowles
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
DELAY OF INITIALIZATION AT MEMORY DIE
- Publication number 20250044965
- Publication date Feb 6, 2025
- Micron Technology, Inc.
- James S. Rehmeyer
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Programmable Read-Only Memory Cell
- Publication number 20250024669
- Publication date Jan 16, 2025
- X-FAB Global Services GmbH
- Rumen Rachinski
- G11 - INFORMATION STORAGE
Information Patent Application
RE-PROGRAMMABLE INTEGRATED CIRCUIT ARCHITECTURE AND METHOD OF MANUF...
- Publication number 20250006283
- Publication date Jan 2, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Michael Allen Ball
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR INTEGRATED CIRCUIT
- Publication number 20240386978
- Publication date Nov 21, 2024
- Rohm Co., Ltd.
- Naohiro NOMURA
- G11 - INFORMATION STORAGE
Information Patent Application
Multiple Stack High Voltage Circuit for Memory
- Publication number 20240386919
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Application
Electronic Device and Driving Method Thereof
- Publication number 20240339164
- Publication date Oct 10, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC
- SUNGSOO CHI
- G11 - INFORMATION STORAGE
Information Patent Application
DIELECTRIC FILM BASED ONE-TIME PROGRAMMABLE (OTP) MEMORY CELL
- Publication number 20240321369
- Publication date Sep 26, 2024
- QUALCOMM Incorporated
- Abhijeet PAUL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANTIFUSE-TYPE ONE TIME PROGRAMMING MEMORY WITH FORKSHEET TRANSISTORS
- Publication number 20240324191
- Publication date Sep 26, 2024
- EMEMORY TECHNOLOGY INC.
- Lun-Chun CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SECURE ANTI-FUSE ONE TIME PROGRAMMABLE BIT CELL DESIGN
- Publication number 20240321370
- Publication date Sep 26, 2024
- QUALCOMM Incorporated
- Abhijeet PAUL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ONE-TIME PROGRAMMABLE MEMORY DEVICES AND METHODS
- Publication number 20240321371
- Publication date Sep 26, 2024
- SANDISK TECHNOLOGIES LLC
- Deniz Bozdag
- G11 - INFORMATION STORAGE
Information Patent Application
ANTIFUSE-TYPE NON-VOLATILE MEMORY CELL
- Publication number 20240276715
- Publication date Aug 15, 2024
- EMEMORY TECHNOLOGY INC.
- Yi-Hung Li
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR PROTECTING ANTI-FUSE CELL
- Publication number 20240260258
- Publication date Aug 1, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Application
FUSE MEMORY CIRCUIT
- Publication number 20240233845
- Publication date Jul 11, 2024
- ROHM CO., LTD.
- Masanobu TSUJI
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20240170490
- Publication date May 23, 2024
- UNITED MICROELECTRONICS CORP.
- BO TAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FUSE MEMORY CIRCUIT
- Publication number 20240136004
- Publication date Apr 25, 2024
- ROHM CO., LTD.
- Masanobu TSUJI
- G11 - INFORMATION STORAGE
Information Patent Application
MULTILEVEL VOLTAGE DETECTOR CIRCUIT
- Publication number 20240120013
- Publication date Apr 11, 2024
- Shanghai Huali Integrated Circuit Corporation
- Yu Jia
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICES WITH DIFFERENT DOPING TYPES
- Publication number 20240090210
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-STATE ONE-TIME PROGRAMMABLE MEMORY CIRCUIT
- Publication number 20240071538
- Publication date Feb 29, 2024
- Jmem Technology Co., Ltd.
- CHEN-FENG CHANG
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICES WITH BACKSIDE HEATER STRUCTURE
- Publication number 20240055062
- Publication date Feb 15, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE HAVING FUSE COMPONENT
- Publication number 20240014128
- Publication date Jan 11, 2024
- NANYA TECHNOLOGY CORPORATION
- WEI-ZHONG LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICES AND METHODS FOR OPERATING THE SAME
- Publication number 20230389303
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsiang-Wei Liu
- G11 - INFORMATION STORAGE
Information Patent Application
MIM EFUSE MEMORY DEVICES AND FABRICATION METHOD THEREOF
- Publication number 20230377666
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Application
Novel Bank Design with Differential Bulk Bias in eFuse array
- Publication number 20230377654
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Application
ANTI-FUSE SENSING DEVICE AND OPERATION METHOD THEREOF
- Publication number 20230317600
- Publication date Oct 5, 2023
- NANYA TECHNOLOGY CORPORATION
- Chih-Hang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER AMPLIFIER CIRCUIT
- Publication number 20230317189
- Publication date Oct 5, 2023
- MURATA MANUFACTURING CO., LTD.
- Terukazu NAGAKURA
- G11 - INFORMATION STORAGE
Information Patent Application
RE-PROGRAMMABLE INTEGRATED CIRCUIT ARCHITECTURE AND METHOD OF MANUF...
- Publication number 20230253060
- Publication date Aug 10, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Michael Allen Ball
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND OPERATING METHOD OF MEMORY DEVICE
- Publication number 20230223073
- Publication date Jul 13, 2023
- Samsung Electronics Co., Ltd.
- Hijung KIM
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR CIRCUIT AND SEMICONDUCTOR DEVICE FOR DETERMINING STAT...
- Publication number 20230215506
- Publication date Jul 6, 2023
- NANYA TECHNOLOGY CORPORATION
- Wu-Der YANG
- G11 - INFORMATION STORAGE
Information Patent Application
ANTI-FUSE MEMORY AND CONTROL METHOD THEREOF
- Publication number 20230207030
- Publication date Jun 29, 2023
- Changxin Memory Technologies, Inc.
- Rumin JI
- G11 - INFORMATION STORAGE
Information Patent Application
ANTI-FUSE STORAGE LAYOUT AND CIRCUIT THEREOF, AND ANTI-FUSE MEMORY...
- Publication number 20230207456
- Publication date Jun 29, 2023
- Changxin Memory Technologies, Inc.
- Rumin JI
- G11 - INFORMATION STORAGE

Memory cells which are electrically programmed to cause a change in resistance

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Bank design with differential bulk bias in eFuse array

Memory device data loss prevention

Anti-fuse sensing device and operation method thereof

MIM eFuse memory devices and fabrication method thereof

One-transistor (1T) one-time programmable (OTP) anti-fuse bitcell w...

eFUSE programming feedback circuits and methods

Delay of initialization at memory die

Multiple stack high voltage circuit for memory

Layout method by buried rail for centralized anti-fuse read current

Semiconductor structure

Anti-fuse memory and control method thereof

Memory device and operating method thereof

Semiconductor memory devices with different doping types

Semiconductor memory structure and fabrication method thereof

Substrate, printing apparatus, and manufacturing method

Circuit for sensing antifuse of DRAMs

Circuit for detecting state of anti-fuse storage unit and memory de...

Non-volatile memory devices and systems with read-only memory featu...

Bank design with differential bulk bias in eFuse array

MIM efuse memory devices and fabrication method thereof

Liquid discharge head and method of manufacturing the same

Semiconductor circuit and semiconductor device for determining stat...

Non-volatile memory devices and systems with volatile memory featur...

One-time programmable memory read-write circuit

Multiple stack high voltage circuit for memory

Re-programmable integrated circuit architecture and method of manuf...

Semiconductor device including anti-fuse cell

Integrated circuit including eFuse cell

System and method for reducing resistance in anti-fuse cell

Non-volatile memory devices and systems with volatile memory featur...

Patents Applicationslast 30 patents

DELAY OF INITIALIZATION AT MEMORY DIE

Programmable Read-Only Memory Cell

RE-PROGRAMMABLE INTEGRATED CIRCUIT ARCHITECTURE AND METHOD OF MANUF...

SEMICONDUCTOR INTEGRATED CIRCUIT

Multiple Stack High Voltage Circuit for Memory

Electronic Device and Driving Method Thereof

DIELECTRIC FILM BASED ONE-TIME PROGRAMMABLE (OTP) MEMORY CELL

ANTIFUSE-TYPE ONE TIME PROGRAMMING MEMORY WITH FORKSHEET TRANSISTORS

SECURE ANTI-FUSE ONE TIME PROGRAMMABLE BIT CELL DESIGN

ONE-TIME PROGRAMMABLE MEMORY DEVICES AND METHODS

ANTIFUSE-TYPE NON-VOLATILE MEMORY CELL

METHOD FOR PROTECTING ANTI-FUSE CELL

FUSE MEMORY CIRCUIT

SEMICONDUCTOR STRUCTURE

FUSE MEMORY CIRCUIT

MULTILEVEL VOLTAGE DETECTOR CIRCUIT

SEMICONDUCTOR MEMORY DEVICES WITH DIFFERENT DOPING TYPES

MULTI-STATE ONE-TIME PROGRAMMABLE MEMORY CIRCUIT

SEMICONDUCTOR MEMORY DEVICES WITH BACKSIDE HEATER STRUCTURE

SEMICONDUCTOR DEVICE HAVING FUSE COMPONENT

MEMORY DEVICES AND METHODS FOR OPERATING THE SAME

MIM EFUSE MEMORY DEVICES AND FABRICATION METHOD THEREOF

Novel Bank Design with Differential Bulk Bias in eFuse array

ANTI-FUSE SENSING DEVICE AND OPERATION METHOD THEREOF

POWER AMPLIFIER CIRCUIT

RE-PROGRAMMABLE INTEGRATED CIRCUIT ARCHITECTURE AND METHOD OF MANUF...

MEMORY DEVICE AND OPERATING METHOD OF MEMORY DEVICE

SEMICONDUCTOR CIRCUIT AND SEMICONDUCTOR DEVICE FOR DETERMINING STAT...

ANTI-FUSE MEMORY AND CONTROL METHOD THEREOF

ANTI-FUSE STORAGE LAYOUT AND CIRCUIT THEREOF, AND ANTI-FUSE MEMORY...