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Read-only memories programmable only once Semi-permanent stores
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CPC
G11C17/00
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Parent Industries
G
PHYSICS
G11
Information storage
G11C
STATIC STORES
Current Industry
G11C17/00
Read-only memories programmable only once Semi-permanent stores
Sub Industries
G11C17/005
with a storage element common to a large number of data
G11C17/02
using magnetic or induction elements
G11C17/04
using capacitive elements
G11C17/06
using diode elements
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using semiconductor devices
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in which contents are determined during manufacturing by a predetermined arrangement of coupling elements
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using field-effect devices
G11C17/123
comprising cells having several storage transistors connected in series
G11C17/126
Virtual ground arrays
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in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements
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using laser-fusible links
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Write once memory
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using electrically-fusible links
G11C17/165
Memory cells which are electrically programmed to cause a change in resistance
G11C17/18
Auxiliary circuits
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G11C17/00
