Read-only memories programmable only once Semi-permanent stores

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Patents Grantslast 30 patents

Information Patent Grant
One time programmable (OTP) magnetoresistive random-access memory (...
- Patent number 12,170,105
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Po-Hao Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory circuit and method
- Patent number 12,165,722
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Gu-Huan Li
- G11 - INFORMATION STORAGE
Information Patent Grant
One-transistor (1T) one-time programmable (OTP) anti-fuse bitcell w...
- Patent number 12,167,590
- Issue date Dec 10, 2024
- Synopsys, Inc.
- Andrew Edward Horch
- G11 - INFORMATION STORAGE
Information Patent Grant
One-time programmable memory device and semiconductor memory device...
- Patent number 12,165,726
- Issue date Dec 10, 2024
- Samsung Electronics Co., Ltd.
- Yeongmuk Cho
- G11 - INFORMATION STORAGE
Information Patent Grant
Anti-fuse structure, anti-fuse array and memory
- Patent number 12,154,636
- Issue date Nov 26, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Chuangming Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
eFUSE programming feedback circuits and methods
- Patent number 12,150,298
- Issue date Nov 19, 2024
- Texas Instruments Incorporated
- Anand Seshadri
- G11 - INFORMATION STORAGE
Information Patent Grant
High-density and high-voltage-tolerable pure core memory cell
- Patent number 12,148,487
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ku-Feng Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device structure having multiple fuse elements
- Patent number 12,137,552
- Issue date Nov 5, 2024
- NANYA TECHNOLOGY CORPORATION
- Wu-Der Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bit cell structure for one-time-programming
- Patent number 12,133,377
- Issue date Oct 29, 2024
- United Microelectronics Corp.
- Kuo-Hsing Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Delay of initialization at memory die
- Patent number 12,131,040
- Issue date Oct 29, 2024
- Micron Technology, Inc.
- James S. Rehmeyer
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
System on chip (SOC) with processor and integrated ferroelectric me...
- Patent number 12,125,513
- Issue date Oct 22, 2024
- Seagate Technology LLC
- Jon D. Trantham
- G11 - INFORMATION STORAGE
Information Patent Grant
Anti-fuse memory reading circuit with controllable reading time
- Patent number 12,119,069
- Issue date Oct 15, 2024
- WUXI ESIONTECH CO., LTD.
- Zhengzhou Cao
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device with secure access key and associated methods...
- Patent number 12,105,644
- Issue date Oct 1, 2024
- Nathaniel J. Meier
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Test mode security circuit
- Patent number 12,100,476
- Issue date Sep 24, 2024
- Micron Technology, Inc.
- Kari Crane
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device which generates improved read current according to si...
- Patent number 12,094,509
- Issue date Sep 17, 2024
- Samsung Electronics Co., Ltd.
- Daeshik Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Multiple stack high voltage circuit for memory
- Patent number 12,094,558
- Issue date Sep 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Grant
Bit selection for power reduction in stacking structure during memo...
- Patent number 12,087,378
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Anti-fuse programming control circuit based on master-slave charge...
- Patent number 12,087,377
- Issue date Sep 10, 2024
- WUXI ESIONTECH CO., LTD.
- Zhengzhou Cao
- G11 - INFORMATION STORAGE
Information Patent Grant
Operation method of multi-bits read only memory
- Patent number 12,080,363
- Issue date Sep 3, 2024
- Chen-Feng Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Radiation hardened e-fuse macro
- Patent number 12,080,344
- Issue date Sep 3, 2024
- BAE Systems Information and Electronic Systems Integration Inc.
- Jason F. Ross
- G11 - INFORMATION STORAGE
Information Patent Grant
Anti-fuse readout circuit, anti-fuse memory, and testing method
- Patent number 12,082,402
- Issue date Sep 3, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Rumin Ji
- G11 - INFORMATION STORAGE
Information Patent Grant
One time programmable bitcell with select device in isolated well
- Patent number 12,082,403
- Issue date Sep 3, 2024
- Synopsys, Inc.
- Andrew Edward Horch
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrical fuse bit cell in integrated circuit having backside cond...
- Patent number 12,080,641
- Issue date Sep 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Ying Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Anti-fuse array
- Patent number 12,073,169
- Issue date Aug 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Sheng Chang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Layout structure including anti-fuse cell
- Patent number 12,063,773
- Issue date Aug 13, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Sheng Chang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Voltage trimming circuit
- Patent number 12,062,404
- Issue date Aug 13, 2024
- Samsung Electronics Co., Ltd.
- Minho Choi
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and method of operating the same
- Patent number 12,058,852
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Hsiang-Wei Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Element substrate
- Patent number 12,046,309
- Issue date Jul 23, 2024
- Canon Kabushiki Kaisha
- Suguru Taniguchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device structure
- Patent number 12,046,310
- Issue date Jul 23, 2024
- NANYA TECHNOLOGY CORPORATION
- Wu-Der Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Anti-fuse unit and anti-fuse array
- Patent number 12,046,552
- Issue date Jul 23, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- ChihCheng Liu
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
RADIATION HARDENED E-FUSE MACRO
- Publication number 20240404591
- Publication date Dec 5, 2024
- BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC
- Jason F. Ross
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND INKJET PRINTING ELEMENT SUBSTRATE
- Publication number 20240404612
- Publication date Dec 5, 2024
- Canon Kabushiki Kaisha
- TOSHIO NEGISHI
- B41 - PRINTING LINING MACHINES TYPEWRITERS STAMPS
Information Patent Application
ONE-TIME-PROGRAMMABLE MEMORY DEVICES
- Publication number 20240404611
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chrong Jung Lin
- G11 - INFORMATION STORAGE
Information Patent Application
ONE-TIME-PROGRAMMABLE MEMORY DEVICE
- Publication number 20240397710
- Publication date Nov 28, 2024
- Ememory Technology Inc.
- Lun-Chun CHEN
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20240395709
- Publication date Nov 28, 2024
- SOCIONEXT INC.
- Yasumitsu SAKAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ONE TIME PROGRAMMING MEMORY INCLUDING FORKSHEET TRANSISTORS AND USI...
- Publication number 20240395863
- Publication date Nov 28, 2024
- EMEMORY TECHNOLOGY INC.
- Lun-Chun CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR INTEGRATED CIRCUIT
- Publication number 20240386978
- Publication date Nov 21, 2024
- Rohm Co., Ltd.
- Naohiro NOMURA
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20240387406
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han Lin
- G11 - INFORMATION STORAGE
Information Patent Application
METAL FUSE STRUCTURE BY VIA LANDING
- Publication number 20240389312
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsiang-Wei Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bit Selection for Power Reduction in Stacking Structure During Memo...
- Publication number 20240386979
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Application
Multiple Stack High Voltage Circuit for Memory
- Publication number 20240386919
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH-DENSITY & HIGH-VOLTAGE-TOLERABLE PURE CORE MEMORY CELL
- Publication number 20240386977
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ku-Feng Lin
- G11 - INFORMATION STORAGE
Information Patent Application
ELEMENT SUBSTRATE
- Publication number 20240379179
- Publication date Nov 14, 2024
- Canon Kabushiki Kaisha
- Suguru Taniguchi
- G11 - INFORMATION STORAGE
Information Patent Application
ANTI-FUSE DEVICE
- Publication number 20240370622
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng CHANG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY DEVICE FOR PERFORMING IN-MEMORY COMPUTATION AND OPERATING ME...
- Publication number 20240371453
- Publication date Nov 7, 2024
- Macronix International Co., Ltd.
- Yu-Yu Lin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ELECTRICAL FUSE BIT CELL IN INTEGRATED CIRCUIT HAVING BACKSIDE COND...
- Publication number 20240363530
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Ying CHEN
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE, INTEGRATED CIRCUIT AND MANUFACTURING METHOD OF THE SAME
- Publication number 20240357805
- Publication date Oct 24, 2024
- Ipcell Corporation Limited
- Te-Hsun HSU
- G11 - INFORMATION STORAGE
Information Patent Application
LAYOUT STRUCTURE INCLUDING ANTI-FUSE CELL
- Publication number 20240349494
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Sheng Chang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR DEVICE WITH SECURE ACCESS KEY AND ASSOCIATED METHODS...
- Publication number 20240345967
- Publication date Oct 17, 2024
- Lodestar Licensing Group LLC
- Brenton P. Van Leeuwen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FUSE CELL STRUCTURE
- Publication number 20240349495
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jhon Jhy Liaw
- G11 - INFORMATION STORAGE
Information Patent Application
ANTI-FUSE CIRCUIT AND ANTI-FUSE UNIT PROGRAMMING STATE VERIFICATION...
- Publication number 20240339165
- Publication date Oct 10, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Jiarui Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
READ-ONLY MEMORY DEVICE AND METHOD
- Publication number 20240341092
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ku-Feng LIN
- G11 - INFORMATION STORAGE
Information Patent Application
Electronic Device and Driving Method Thereof
- Publication number 20240339164
- Publication date Oct 10, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC
- SUNGSOO CHI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND METHODS
- Publication number 20240331786
- Publication date Oct 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng CHANG
- G11 - INFORMATION STORAGE
Information Patent Application
DIELECTRIC FILM BASED ONE-TIME PROGRAMMABLE (OTP) MEMORY CELL
- Publication number 20240321369
- Publication date Sep 26, 2024
- QUALCOMM Incorporated
- Abhijeet PAUL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ONE TIME PROGRAMMING MEMORY CELL AND MEMORY ARRAY FOR PHYSICALLY UN...
- Publication number 20240321778
- Publication date Sep 26, 2024
- EMEMORY TECHNOLOGY INC.
- Tsao-Hsin YANG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
DELAY ELEMENTS FOR COMMAND TIMING IN A MEMORY DEVICE
- Publication number 20240320169
- Publication date Sep 26, 2024
- Micron Technology, Inc.
- James S. Rehmeyer
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ANTIFUSE-TYPE ONE TIME PROGRAMMING MEMORY WITH FORKSHEET TRANSISTORS
- Publication number 20240324191
- Publication date Sep 26, 2024
- EMEMORY TECHNOLOGY INC.
- Lun-Chun CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SECURE ANTI-FUSE ONE TIME PROGRAMMABLE BIT CELL DESIGN
- Publication number 20240321370
- Publication date Sep 26, 2024
- QUALCOMM Incorporated
- Abhijeet PAUL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ONE-TIME PROGRAMMABLE MEMORY DEVICES AND METHODS
- Publication number 20240321371
- Publication date Sep 26, 2024
- SANDISK TECHNOLOGIES LLC
- Deniz Bozdag
- G11 - INFORMATION STORAGE

Read-only memories programmable only once Semi-permanent stores

Industry

Parent Industries

Current Industry

Sub Industries

Patents Grantslast 30 patents

One time programmable (OTP) magnetoresistive random-access memory (...

Non-volatile memory circuit and method

One-transistor (1T) one-time programmable (OTP) anti-fuse bitcell w...

One-time programmable memory device and semiconductor memory device...

Anti-fuse structure, anti-fuse array and memory

eFUSE programming feedback circuits and methods

High-density and high-voltage-tolerable pure core memory cell

Semiconductor device structure having multiple fuse elements

Bit cell structure for one-time-programming

Delay of initialization at memory die

System on chip (SOC) with processor and integrated ferroelectric me...

Anti-fuse memory reading circuit with controllable reading time

Semiconductor device with secure access key and associated methods...

Test mode security circuit

Memory device which generates improved read current according to si...

Multiple stack high voltage circuit for memory

Bit selection for power reduction in stacking structure during memo...

Anti-fuse programming control circuit based on master-slave charge...

Operation method of multi-bits read only memory

Radiation hardened e-fuse macro

Anti-fuse readout circuit, anti-fuse memory, and testing method

One time programmable bitcell with select device in isolated well

Electrical fuse bit cell in integrated circuit having backside cond...

Anti-fuse array

Layout structure including anti-fuse cell

Voltage trimming circuit

Semiconductor device and method of operating the same

Element substrate

Semiconductor device structure

Anti-fuse unit and anti-fuse array

Patents Applicationslast 30 patents

RADIATION HARDENED E-FUSE MACRO

SEMICONDUCTOR DEVICE AND INKJET PRINTING ELEMENT SUBSTRATE

ONE-TIME-PROGRAMMABLE MEMORY DEVICES

ONE-TIME-PROGRAMMABLE MEMORY DEVICE

SEMICONDUCTOR MEMORY DEVICE

ONE TIME PROGRAMMING MEMORY INCLUDING FORKSHEET TRANSISTORS AND USI...

SEMICONDUCTOR INTEGRATED CIRCUIT

SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF

METAL FUSE STRUCTURE BY VIA LANDING

Bit Selection for Power Reduction in Stacking Structure During Memo...

Multiple Stack High Voltage Circuit for Memory

HIGH-DENSITY & HIGH-VOLTAGE-TOLERABLE PURE CORE MEMORY CELL

ELEMENT SUBSTRATE

ANTI-FUSE DEVICE

MEMORY DEVICE FOR PERFORMING IN-MEMORY COMPUTATION AND OPERATING ME...

ELECTRICAL FUSE BIT CELL IN INTEGRATED CIRCUIT HAVING BACKSIDE COND...

MEMORY DEVICE, INTEGRATED CIRCUIT AND MANUFACTURING METHOD OF THE SAME

LAYOUT STRUCTURE INCLUDING ANTI-FUSE CELL

SEMICONDUCTOR DEVICE WITH SECURE ACCESS KEY AND ASSOCIATED METHODS...

FUSE CELL STRUCTURE

ANTI-FUSE CIRCUIT AND ANTI-FUSE UNIT PROGRAMMING STATE VERIFICATION...

READ-ONLY MEMORY DEVICE AND METHOD

Electronic Device and Driving Method Thereof

MEMORY DEVICE AND METHODS

DIELECTRIC FILM BASED ONE-TIME PROGRAMMABLE (OTP) MEMORY CELL

ONE TIME PROGRAMMING MEMORY CELL AND MEMORY ARRAY FOR PHYSICALLY UN...

DELAY ELEMENTS FOR COMMAND TIMING IN A MEMORY DEVICE

ANTIFUSE-TYPE ONE TIME PROGRAMMING MEMORY WITH FORKSHEET TRANSISTORS

SECURE ANTI-FUSE ONE TIME PROGRAMMABLE BIT CELL DESIGN

ONE-TIME PROGRAMMABLE MEMORY DEVICES AND METHODS