Memory core region core region

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H01L27/11521

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

Current Industry

H01L27/11521Memory core region core region

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 11,682,736
- Issue date Jun 20, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Chun Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,676,975
- Issue date Jun 13, 2023
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for converting a floating gate non-volatile memory cell to a...
- Patent number 11,665,915
- Issue date May 30, 2023
- STMICROELECTRONICS INTERNATIONAL N.V.
- Fabio De Santis
- G11 - INFORMATION STORAGE
Information Patent Grant
Improving surface topography by forming spacer-like components
- Patent number 11,665,897
- Issue date May 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Chang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 11,664,362
- Issue date May 30, 2023
- Samsung Electronics Co., Ltd.
- Hyun Mog Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate memory device and method of fabricating the same
- Patent number 11,658,224
- Issue date May 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chang-Ming Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory structure and fabrication method thereof
- Patent number 11,659,710
- Issue date May 23, 2023
- Semiconductor Manufacturing International (Shanghai) Corporation
- Liang Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single well one transistor and one capacitor nonvolatile memory dev...
- Patent number 11,659,709
- Issue date May 23, 2023
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash memory device with three-dimensional half flash structure and...
- Patent number 11,658,248
- Issue date May 23, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Yu-Chu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device
- Patent number 11,647,631
- Issue date May 9, 2023
- KIOXIA CORPORATION
- Shota Kashiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming NAND cell units
- Patent number 11,646,363
- Issue date May 9, 2023
- Micron Technology, Inc.
- Yongjun Jeff Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating a high-voltage capacitive element, and corr...
- Patent number 11,640,972
- Issue date May 2, 2023
- STMicroelectronics (Rousset) SAS
- Abderrezak Marzaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Microelectronic devices with tiered blocks separated by progressive...
- Patent number 11,641,741
- Issue date May 2, 2023
- Micron Technology, Inc.
- Kaiming Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitive element comprising a monolithic conductive region having...
- Patent number 11,637,106
- Issue date Apr 25, 2023
- STMicroelectronics (Rousset) SAS
- Abderrezak Marzaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory device and method for fabricating the same
- Patent number 11,637,188
- Issue date Apr 25, 2023
- United Microelectronics Corp.
- Yu-Jen Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory device and method for manufacturing the same
- Patent number 11,637,112
- Issue date Apr 25, 2023
- Winbond Electronics Corp.
- Chun-Hao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,637,113
- Issue date Apr 25, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- ShihKuang Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method of manufacturing the same
- Patent number 11,631,685
- Issue date Apr 18, 2023
- Winbond Electronics Corp.
- Chung-Hsuan Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Temperature assisted programming of flash memory for neuromorphic c...
- Patent number 11,631,462
- Issue date Apr 18, 2023
- International Business Machines Corporation
- Nanbo Gong
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Non-volatile memory structure using semiconductor layer as floating...
- Patent number 11,631,772
- Issue date Apr 18, 2023
- GLOBALFOUNDRIES U.S. INC.
- Thomas Melde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device, method of manufacturing the same, and...
- Patent number 11,626,498
- Issue date Apr 11, 2023
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor constructions, memory arrays, electronic systems, and...
- Patent number 11,626,481
- Issue date Apr 11, 2023
- Micron Technology, Inc.
- Zailong Bian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming an array of elevationally-extending strings of m...
- Patent number 11,621,270
- Issue date Apr 4, 2023
- Micron Technology, Inc.
- Dimitrios Pavlopoulos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with hydrogen-rich semiconductor ch...
- Patent number 11,621,275
- Issue date Apr 4, 2023
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method thereof
- Patent number 11,616,069
- Issue date Mar 28, 2023
- United Microelectronics Corp.
- Ping-Chia Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NOR memory cell with vertical floating gate
- Patent number 11,616,071
- Issue date Mar 28, 2023
- GREENLIANT IP, LLC
- Bing Yeh
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile storage element and analog circuit provided with same
- Patent number 11,611,000
- Issue date Mar 21, 2023
- Asahi Kasei Microdevices Corporation
- Toshiro Sakamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device for improving weak-program or stuck bit
- Patent number 11,605,438
- Issue date Mar 14, 2023
- Ememory Technology Inc.
- Ting-Ting Su
- G11 - INFORMATION STORAGE
Information Patent Grant
Flash device and manufacturing method thereof
- Patent number 11,605,641
- Issue date Mar 14, 2023
- CSMC Technologies Fab2 Co., Ltd.
- Song Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making nanosheet local capacitors and nvm devices
- Patent number 11,605,729
- Issue date Mar 14, 2023
- NXP B.V.
- Mark Douglas Hall
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240234528
- Publication date Jul 11, 2024
- RENESAS ELECTRONICS CORPORATION
- Hitoshi MAEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240179898
- Publication date May 30, 2024
- WINBOND ELECTRONICS CORP.
- Tzu-Yun HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240136419
- Publication date Apr 25, 2024
- RENESAS ELECTRONICS CORPORATION
- Hitoshi MAEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20240114688
- Publication date Apr 4, 2024
- United Microelectronics Corp.
- Chia-Wen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20240090215
- Publication date Mar 14, 2024
- WINBOND ELECTRONICS CORP.
- Yuan-Huang WEI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND FABRICATING METHOD OF THE SAME
- Publication number 20240081055
- Publication date Mar 7, 2024
- UNITED MICROELECTRONICS CORP.
- Hsuan-Kai Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE
- Publication number 20240074174
- Publication date Feb 29, 2024
- UNITED MICROELECTRONICS CORP.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Asymmetric Single-Channel Floating Gate Memristor
- Publication number 20240049462
- Publication date Feb 8, 2024
- Tower Semiconductor Ltd.
- Evgeny Pikhay
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL ARRAY WITH INCREASED SOURCE BIAS VOLTAGE
- Publication number 20240049470
- Publication date Feb 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Jun Wu
- G11 - INFORMATION STORAGE
Information Patent Application
FLASH MEMORY WITH IREAD TUNING
- Publication number 20240040783
- Publication date Feb 1, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Toan Tran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT-GATE NON-VOLATILE MEMORY, FABRICATION AND CONTROL METHODS THE...
- Publication number 20240032290
- Publication date Jan 25, 2024
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20230413541
- Publication date Dec 21, 2023
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE HAVING STAIRCASE STRUCTURE AND METH...
- Publication number 20230413542
- Publication date Dec 21, 2023
- Yangtze Memory Technologies Co., Ltd.
- Ling Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROELECTRONIC DEVICES INCLUDING SLOT STRUCTURES, AND RELATED ELEC...
- Publication number 20230335439
- Publication date Oct 19, 2023
- Micron Technology, Inc.
- Chandra S. Tiwari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230337424
- Publication date Oct 19, 2023
- WINBOND ELECTRONICS CORP.
- Cheng-Hong Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Arrays Comprising Strings Of Memory Cells And Methods Used I...
- Publication number 20230320085
- Publication date Oct 5, 2023
- Micron Technology, Inc.
- Shyam Surthi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SEMICONDUCTOR DEVICE
- Publication number 20230290642
- Publication date Sep 14, 2023
- WINBOND ELECTRONICS CORP.
- Yu-Jen HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING NON-VOLATILE MEMORY DEVICE
- Publication number 20230232623
- Publication date Jul 20, 2023
- IoTMemory Technology Inc.
- Der-Tsyr Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230209820
- Publication date Jun 29, 2023
- WINBOND ELECTRONICS CORP.
- Che-Fu Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ADDRESS FAULT DETECTION IN A MEMORY SYSTEM
- Publication number 20230162794
- Publication date May 25, 2023
- Silicon Storage Technology, Inc.
- Hieu Van Tran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DETERMINATION OF A BIAS VOLTAGE TO APPLY TO ONE OR MORE MEMORY CELL...
- Publication number 20230154528
- Publication date May 18, 2023
- Silicon Storage Technology, Inc.
- Hieu Van Tran
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY DEVICES INCLUDING STRINGS OF MEMORY CELLS, AND RELATED ELECT...
- Publication number 20230148107
- Publication date May 11, 2023
- Micron Technology, Inc.
- John D. Hopkins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY (EEPROM) CELL A...
- Publication number 20230128356
- Publication date Apr 27, 2023
- UNITED MICROELECTRONICS CORP.
- Aaron Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having Electrically Floating Body Transistor,...
- Publication number 20230128791
- Publication date Apr 27, 2023
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G11 - INFORMATION STORAGE
Information Patent Application
ETCH METHOD FOR OPENING A SOURCE LINE IN FLASH MEMORY
- Publication number 20230117612
- Publication date Apr 20, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yong-Sheng Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Device Having Nano-Structure and Method for Fabricating the...
- Publication number 20230112478
- Publication date Apr 13, 2023
- Hyundai Motor Company
- Jong Seok Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE, METHOD OF MANUFACTURING THE SAME, AND...
- Publication number 20230110504
- Publication date Apr 13, 2023
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAP-CELL ARCHITECTURE FOR EMBEDDED MEMORY
- Publication number 20230112168
- Publication date Apr 13, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Tuo Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20230106501
- Publication date Apr 6, 2023
- Fujian Jinhua Integrated Circuit Co., Ltd.
- Pei-Ting Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLASH MEMORY CELL
- Publication number 20230103976
- Publication date Apr 6, 2023
- UNITED MICROELECTRONICS CORP.
- Chia-Min Hung
- H01 - BASIC ELECTRIC ELEMENTS

Memory core region core region

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device

Semiconductor device

Method for converting a floating gate non-volatile memory cell to a...

Improving surface topography by forming spacer-like components

Semiconductor devices

Split gate memory device and method of fabricating the same

Memory structure and fabrication method thereof

Single well one transistor and one capacitor nonvolatile memory dev...

Flash memory device with three-dimensional half flash structure and...

Semiconductor memory device

Methods of forming NAND cell units

Process for fabricating a high-voltage capacitive element, and corr...

Microelectronic devices with tiered blocks separated by progressive...

Capacitive element comprising a monolithic conductive region having...

Non-volatile memory device and method for fabricating the same

Non-volatile memory device and method for manufacturing the same

Semiconductor device and manufacturing method thereof

Memory device and method of manufacturing the same

Temperature assisted programming of flash memory for neuromorphic c...

Non-volatile memory structure using semiconductor layer as floating...

Semiconductor memory device, method of manufacturing the same, and...

Semiconductor constructions, memory arrays, electronic systems, and...

Methods of forming an array of elevationally-extending strings of m...

Three-dimensional memory device with hydrogen-rich semiconductor ch...

Semiconductor structure and manufacturing method thereof

NOR memory cell with vertical floating gate

Nonvolatile storage element and analog circuit provided with same

Memory device for improving weak-program or stuck bit

Flash device and manufacturing method thereof

Method of making nanosheet local capacitors and nvm devices

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

NON-VOLATILE MEMORY STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE

MEMORY STRUCTURE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME

SEMICONDUCTOR STRUCTURE AND FABRICATING METHOD OF THE SAME

MEMORY DEVICE

Asymmetric Single-Channel Floating Gate Memristor

MEMORY CELL ARRAY WITH INCREASED SOURCE BIAS VOLTAGE

FLASH MEMORY WITH IREAD TUNING

SPLIT-GATE NON-VOLATILE MEMORY, FABRICATION AND CONTROL METHODS THE...

THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICE HAVING STAIRCASE STRUCTURE AND METH...

MICROELECTRONIC DEVICES INCLUDING SLOT STRUCTURES, AND RELATED ELEC...

MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

Memory Arrays Comprising Strings Of Memory Cells And Methods Used I...

METHOD FOR FORMING SEMICONDUCTOR DEVICE

METHOD OF MANUFACTURING NON-VOLATILE MEMORY DEVICE

MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

ADDRESS FAULT DETECTION IN A MEMORY SYSTEM

DETERMINATION OF A BIAS VOLTAGE TO APPLY TO ONE OR MORE MEMORY CELL...

MEMORY DEVICES INCLUDING STRINGS OF MEMORY CELLS, AND RELATED ELECT...

ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY (EEPROM) CELL A...

Semiconductor Device Having Electrically Floating Body Transistor,...

ETCH METHOD FOR OPENING A SOURCE LINE IN FLASH MEMORY

Memory Device Having Nano-Structure and Method for Fabricating the...

SEMICONDUCTOR MEMORY DEVICE, METHOD OF MANUFACTURING THE SAME, AND...

STRAP-CELL ARCHITECTURE FOR EMBEDDED MEMORY

SEMICONDUCTOR MEMORY DEVICE

FLASH MEMORY CELL