Memory core region

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H01L27/11507

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

Current Industry

H01L27/11507Memory core region

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Methods of incorporating leaker devices into capacitor configuratio...
- Patent number 11,676,768
- Issue date Jun 13, 2023
- Micron Technology, Inc.
- Ashonita A. Chavan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of incorporating leaker devices into capacitor configuratio...
- Patent number 11,672,128
- Issue date Jun 6, 2023
- Micron Technology, Inc.
- Marcello Mariani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated assemblies and methods of forming integrated assemblies
- Patent number 11,670,707
- Issue date Jun 6, 2023
- Micron Technology, Inc.
- David K. Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device
- Patent number 11,672,129
- Issue date Jun 6, 2023
- Kioxia Corporation
- Shoichi Kabuyanagi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device structures and methods
- Patent number 11,670,698
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Writing scheme for multi-element gain ferroelectric memory bit-cell...
- Patent number 11,664,060
- Issue date May 30, 2023
- Kepler Computing Inc.
- Rajeev Kumar Dokania
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of making interconnect structure having ferroelectric capaci...
- Patent number 11,664,415
- Issue date May 30, 2023
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FeRAM with laminated ferroelectric film and method forming same
- Patent number 11,665,909
- Issue date May 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bi-Shen Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric device film stacks with texturing layer, and method o...
- Patent number 11,659,714
- Issue date May 23, 2023
- Kepler Computing Inc.
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FeFET with embedded conductive sidewall spacers and process for for...
- Patent number 11,653,502
- Issue date May 16, 2023
- Intel Corporation
- Shriram Shivaraman
- G11 - INFORMATION STORAGE
Information Patent Grant
Integration of a ferroelectric memory device with a transistor
- Patent number 11,641,747
- Issue date May 2, 2023
- Kepler Computing Inc.
- Gaurav Thareja
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned etch back for vertical three dimensional (3D) memory
- Patent number 11,641,732
- Issue date May 2, 2023
- Micron Technology, Inc.
- Litao Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated electronic circuit and method of making comprising a fir...
- Patent number 11,637,111
- Issue date Apr 25, 2023
- Fraunhofer-Gesellschaft zur Forderung Angewandten Forschung E.V.
- Konrad Seidel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formulation for deposition of silicon doped hafnium oxide as ferroe...
- Patent number 11,631,580
- Issue date Apr 18, 2023
- VERSUM MATERIALS US, LLC
- Xinjian Lei
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Deck selection layouts in a memory device
- Patent number 11,616,068
- Issue date Mar 28, 2023
- Micron Technology, Inc.
- Daniele Vimercati
- G11 - INFORMATION STORAGE
Information Patent Grant
Pulsing scheme for a 1TNC ferroelectric memory bit-cell with plate-...
- Patent number 11,610,619
- Issue date Mar 21, 2023
- Kepler Computing Inc.
- Rajeev Kumar Dokania
- G11 - INFORMATION STORAGE
Information Patent Grant
Oxide semiconductor-based FRAM
- Patent number 11,610,621
- Issue date Mar 21, 2023
- Powerchip Semiconductor Manufacturing Corporation
- Shou-Zen Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Capacitive memory structure, functional layer, electronic device, a...
- Patent number 11,610,903
- Issue date Mar 21, 2023
- FERROELECTRIC MEMORY GMBH
- Tony Schenk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method of manufacture
- Patent number 11,610,904
- Issue date Mar 21, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated non volatile memory electrode thin film resistor cap and...
- Patent number 11,610,941
- Issue date Mar 21, 2023
- International Business Machines Corporation
- Kevin W. Brew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors and memory arrays
- Patent number 11,605,723
- Issue date Mar 14, 2023
- Micron Technology, Inc.
- Scott E. Sills
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells comprising ferroelectric material and including curren...
- Patent number 11,600,691
- Issue date Mar 7, 2023
- Micron Technology, Inc.
- Muralikrishnan Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Remanent polarizable capacitive structure, memory cell, and methods...
- Patent number 11,594,542
- Issue date Feb 28, 2023
- FERROELECTRIC MEMORY GMBH
- Patrick Polakowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wakeup-free ferroelectric memory device
- Patent number 11,594,632
- Issue date Feb 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Mickey Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of incorporating leaker devices into capacitor configuratio...
- Patent number 11,587,938
- Issue date Feb 21, 2023
- Micron Technology, Inc.
- Michael Mutch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memory device using back-end-of-line (BEOL) thin film...
- Patent number 11,569,250
- Issue date Jan 31, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Array of memory cells, methods used in forming an array of memory c...
- Patent number 11,557,593
- Issue date Jan 17, 2023
- Micron Technology, Inc.
- Antonino Rigano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric capacitor, ferroelectric field effect transistor, and...
- Patent number 11,552,086
- Issue date Jan 10, 2023
- Micron Technology, Inc.
- Ashonita A. Chavan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatuses, systems, and methods for ferroelectric memory cell ope...
- Patent number 11,545,205
- Issue date Jan 3, 2023
- Micron Technology, Inc.
- Daniele Vimercati
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuit design and layout with high embedded memory density
- Patent number 11,545,202
- Issue date Jan 3, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
NEGATIVE CAPACITANCE FOR FERROELECTRIC CAPACITIVE MEMORY CELL
- Publication number 20240194236
- Publication date Jun 13, 2024
- International Business Machines Corporation
- Takashi Ando
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-STATE FERROELECTRIC-RAM WITH STACKED CAPACITORS
- Publication number 20240121966
- Publication date Apr 11, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE FERROELECTRIC DEPLOYMENT FOR SINGLE-TRANSISTOR, MULTIPLE-...
- Publication number 20240112714
- Publication date Apr 4, 2024
- Intel Corporation
- Nazila Haratipour
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH ENDURANCE SUPER-LATTICE ANTI-FERROELECTRIC CAPACITORS
- Publication number 20240114695
- Publication date Apr 4, 2024
- Intel Corporation
- Sou-Chi Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAIN CELL USING PLANAR AND TRENCH FERROELECTRIC AND ANTI-FERROELECT...
- Publication number 20240114697
- Publication date Apr 4, 2024
- Intel Corporation
- Shriram SHIVARAMAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMPROVED REPLACEMENT ELECTRODE PROCESS FOR 3D FERROELECTRIC MEMORY
- Publication number 20240114696
- Publication date Apr 4, 2024
- Intel Corporation
- Christopher Neumann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC CAPACITOR WITHIN BACKSIDE INTERCONNECT
- Publication number 20240114694
- Publication date Apr 4, 2024
- Intel Corporation
- Sourav Dutta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC TUNNEL JUNCTION DEVICES FOR LOW VOLTAGE AND LOW TEMPE...
- Publication number 20240105811
- Publication date Mar 28, 2024
- Intel Corporation
- Abhishek Anil Sharma
- G11 - INFORMATION STORAGE
Information Patent Application
HYBRID MANUFACTURING OF ACCESS TRANSISTORS FOR MEMORY
- Publication number 20240098965
- Publication date Mar 21, 2024
- Intel Corporation
- Abhishek A. Sharma
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC MEMORY DEVICE ERASURE
- Publication number 20240088065
- Publication date Mar 14, 2024
- International Business Machines Corporation
- Nanbo Gong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCALIZED ANNEAL OF FERROELECTRIC DIELECTRIC
- Publication number 20240074207
- Publication date Feb 29, 2024
- International Business Machines Corporation
- Nanbo Gong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC TUNNEL JUNCTION (FTJ) STRUCTURES
- Publication number 20240057343
- Publication date Feb 15, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuen-Yi Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE ASSEMBLY WITH A LEAKER DEVICE
- Publication number 20240049473
- Publication date Feb 8, 2024
- Micron Technology, Inc.
- Ashonita A. CHAVAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC TUNNEL JUNCTION DEVICE
- Publication number 20240040799
- Publication date Feb 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuen-Yi Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELLS AND ARRANGEMENTS THEREOF
- Publication number 20240032306
- Publication date Jan 25, 2024
- Ferroelectric Memory GmbH
- Johnnes OCKER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING DIELECTRIC STRUCTURE INCLUDING FERRO...
- Publication number 20240023343
- Publication date Jan 18, 2024
- SK HYNIX INC.
- Won Tae KOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROGRAMMABLE CAPACITOR MEMORY ARRAYS WITH STACKED ACCESS TRANSISTORS
- Publication number 20240008291
- Publication date Jan 4, 2024
- Intel Corporation
- Abhishek Anil Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK-END-OF-LINE 2D MEMORY CELL
- Publication number 20240008290
- Publication date Jan 4, 2024
- Intel Corporation
- Chia-Ching LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-DENSITY LOW VOLTAGE FERROELECTRIC DIFFERENTIAL MEMORY BIT-CELL...
- Publication number 20230420022
- Publication date Dec 28, 2023
- Kepler Computing Inc.
- Sasikanth Manipatruni
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUIT DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230422515
- Publication date Dec 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Yu HSIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC NON-VOLATILE MEMORY DEVICES
- Publication number 20230402496
- Publication date Dec 14, 2023
- TetraMem Inc.
- Minxian Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20230403863
- Publication date Dec 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ying-Chih Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC TUNNEL JUNCTION MEMORY DEVICES WITH ENHANCED READ WINDOW
- Publication number 20230403864
- Publication date Dec 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei Ting HSIEH
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC TUNNEL JUNCTIONS WITH CONDUCTIVE ELECTRODES HAVING AS...
- Publication number 20230403862
- Publication date Dec 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Hsuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE ASSEMBLY WITH A LEAKER DEVICE
- Publication number 20230397433
- Publication date Dec 7, 2023
- Micron Technology, Inc.
- Fatma Arzum SIMSEK-EGE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE ASSEMBLY WITH REDISTRIBUTION LAYER BETWEEN TRANSISTOR...
- Publication number 20230397434
- Publication date Dec 7, 2023
- Micron Technology, Inc.
- Marcello Mariani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE ASSEMBLY WITH NON-IMPINGED LEAKER DEVICES
- Publication number 20230397435
- Publication date Dec 7, 2023
- Micron Technology, Inc.
- Beth R. COOK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL ISOLATION
- Publication number 20230389331
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230380179
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20230380191
- Publication date Nov 23, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Xiaoguang WANG
- H01 - BASIC ELECTRIC ELEMENTS

Memory core region

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Methods of incorporating leaker devices into capacitor configuratio...

Methods of incorporating leaker devices into capacitor configuratio...

Integrated assemblies and methods of forming integrated assemblies

Memory device

Three-dimensional memory device structures and methods

Writing scheme for multi-element gain ferroelectric memory bit-cell...

Method of making interconnect structure having ferroelectric capaci...

FeRAM with laminated ferroelectric film and method forming same

Ferroelectric device film stacks with texturing layer, and method o...

FeFET with embedded conductive sidewall spacers and process for for...

Integration of a ferroelectric memory device with a transistor

Self-aligned etch back for vertical three dimensional (3D) memory

Integrated electronic circuit and method of making comprising a fir...

Formulation for deposition of silicon doped hafnium oxide as ferroe...

Deck selection layouts in a memory device

Pulsing scheme for a 1TNC ferroelectric memory bit-cell with plate-...

Oxide semiconductor-based FRAM

Capacitive memory structure, functional layer, electronic device, a...

Semiconductor structure and method of manufacture

Integrated non volatile memory electrode thin film resistor cap and...

Transistors and memory arrays

Memory cells comprising ferroelectric material and including curren...

Remanent polarizable capacitive structure, memory cell, and methods...

Wakeup-free ferroelectric memory device

Methods of incorporating leaker devices into capacitor configuratio...

Ferroelectric memory device using back-end-of-line (BEOL) thin film...

Array of memory cells, methods used in forming an array of memory c...

Ferroelectric capacitor, ferroelectric field effect transistor, and...

Apparatuses, systems, and methods for ferroelectric memory cell ope...

Circuit design and layout with high embedded memory density

Patents Applicationslast 30 patents

NEGATIVE CAPACITANCE FOR FERROELECTRIC CAPACITIVE MEMORY CELL

MULTI-STATE FERROELECTRIC-RAM WITH STACKED CAPACITORS

SELECTIVE FERROELECTRIC DEPLOYMENT FOR SINGLE-TRANSISTOR, MULTIPLE-...

HIGH ENDURANCE SUPER-LATTICE ANTI-FERROELECTRIC CAPACITORS

GAIN CELL USING PLANAR AND TRENCH FERROELECTRIC AND ANTI-FERROELECT...

IMPROVED REPLACEMENT ELECTRODE PROCESS FOR 3D FERROELECTRIC MEMORY

FERROELECTRIC CAPACITOR WITHIN BACKSIDE INTERCONNECT

FERROELECTRIC TUNNEL JUNCTION DEVICES FOR LOW VOLTAGE AND LOW TEMPE...

HYBRID MANUFACTURING OF ACCESS TRANSISTORS FOR MEMORY

FERROELECTRIC MEMORY DEVICE ERASURE

LOCALIZED ANNEAL OF FERROELECTRIC DIELECTRIC

FERROELECTRIC TUNNEL JUNCTION (FTJ) STRUCTURES

MEMORY DEVICE ASSEMBLY WITH A LEAKER DEVICE

FERROELECTRIC TUNNEL JUNCTION DEVICE

MEMORY CELLS AND ARRANGEMENTS THEREOF

SEMICONDUCTOR DEVICE INCLUDING DIELECTRIC STRUCTURE INCLUDING FERRO...

PROGRAMMABLE CAPACITOR MEMORY ARRAYS WITH STACKED ACCESS TRANSISTORS

BACK-END-OF-LINE 2D MEMORY CELL

HIGH-DENSITY LOW VOLTAGE FERROELECTRIC DIFFERENTIAL MEMORY BIT-CELL...

INTEGRATED CIRCUIT DEVICE AND METHOD FOR FABRICATING THE SAME

FERROELECTRIC NON-VOLATILE MEMORY DEVICES

SEMICONDUCTOR DEVICES

FERROELECTRIC TUNNEL JUNCTION MEMORY DEVICES WITH ENHANCED READ WINDOW

FERROELECTRIC TUNNEL JUNCTIONS WITH CONDUCTIVE ELECTRODES HAVING AS...

MEMORY DEVICE ASSEMBLY WITH A LEAKER DEVICE

MEMORY DEVICE ASSEMBLY WITH REDISTRIBUTION LAYER BETWEEN TRANSISTOR...

MEMORY DEVICE ASSEMBLY WITH NON-IMPINGED LEAKER DEVICES

MEMORY CELL ISOLATION

MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF