Metal solvents

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CPC
C30B9/10

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CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B9/00Single-crystal growth from melt solutions using molten solvents

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C30B9/10Metal solvents

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Patents Grantslast 30 patents

Information Patent Grant
Synthetic single crystal diamond
- Patent number 11,613,826
- Issue date Mar 28, 2023
- Sumitomo Electric Industries, Ltd.
- Hitoshi Sumiya
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Silicon-based molten composition and method for manufacturing silic...
- Patent number 11,427,926
- Issue date Aug 30, 2022
- LG Chem, Ltd.
- Chan Yeup Chung
- C30 - CRYSTAL GROWTH
Information Patent Grant
Spinel particles, method for producing same and composition and mol...
- Patent number 11,040,887
- Issue date Jun 22, 2021
- DIC Corporation
- Hironobu Oki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Underlying substrate including a seed crystal layer of a group 13 n...
- Patent number 10,947,638
- Issue date Mar 16, 2021
- NGK INSULATORS, LTD.
- Takayuki Hirao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon-based molten composition and manufacturing method of SiC si...
- Patent number 10,718,065
- Issue date Jul 21, 2020
- LG Chem, Ltd.
- Chan Yeup Chung
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing Group III nitride semiconductor, seed substrat...
- Patent number 10,693,032
- Issue date Jun 23, 2020
- Toyoda Gosei Co., Ltd.
- Miki Moriyama
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon-based molten composition and manufacturing method of SiC si...
- Patent number 10,662,547
- Issue date May 26, 2020
- LG Chem, Ltd.
- Chan Yeup Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC single crystal and method for producing same
- Patent number 10,450,671
- Issue date Oct 22, 2019
- Toyota Jidosha Kabushiki Kaisha
- Hironori Daikoku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC single crystal and production method thereof
- Patent number 10,428,440
- Issue date Oct 1, 2019
- Toyota Jidosha Kabushiki Kaisha
- Katsunori Danno
- C30 - CRYSTAL GROWTH
Information Patent Grant
Article comprising a semiconducting material
- Patent number 10,422,051
- Issue date Sep 24, 2019
- The Florida State University Research Foundation, Inc.
- Jeffrey Whalen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Catalyst solvents for carbon nitride
- Patent number 10,377,631
- Issue date Aug 13, 2019
- Charles Montross
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Free-standing substrate, function element and method for producing...
- Patent number 10,249,494
- Issue date Apr 2, 2019
- NGK Insulators, Ltd.
- Takashi Yoshino
- C30 - CRYSTAL GROWTH
Information Patent Grant
N-type SiC single crystal and method for its production
- Patent number 10,167,570
- Issue date Jan 1, 2019
- Toyota Jidosha Kabushiki Kaisha
- Takayuki Shirai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of producing SiC single crystal
- Patent number 10,167,573
- Issue date Jan 1, 2019
- Shin-Etsu Chemical Co., Ltd.
- Tadao Nomura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride bulk crystals and their fabrication method
- Patent number 10,161,059
- Issue date Dec 25, 2018
- Sixpoint Materials, Inc.
- Tadao Hashimoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing nitride of group-13 element, and melt composition
- Patent number 10,156,022
- Issue date Dec 18, 2018
- NGK Insulators, Ltd.
- Takayuki Hirao
- C30 - CRYSTAL GROWTH
Information Patent Grant
GaN template substrate
- Patent number 10,128,406
- Issue date Nov 13, 2018
- NGK Insulators, Ltd.
- Mikiya Ichimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing gallium nitride crystal
- Patent number 10,100,426
- Issue date Oct 16, 2018
- Ricoh Company, Ltd.
- Takashi Satoh
- C30 - CRYSTAL GROWTH
Information Patent Grant
Seed crystal substrates, composite substrates and functional devices
- Patent number 10,032,958
- Issue date Jul 24, 2018
- NGK Insulators, Ltd.
- Shuuhei Higashihara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing silicon carbide crystal
- Patent number 9,951,439
- Issue date Apr 24, 2018
- Shin-Etsu Chemical Co., Ltd.
- Naofumi Shinya
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing silicon carbide crystal
- Patent number 9,945,047
- Issue date Apr 17, 2018
- Shin-Etsu Chemical Co., Ltd.
- Naofumi Shinya
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing group III nitride semiconductor using a crucible
- Patent number 9,903,042
- Issue date Feb 27, 2018
- Toyoda Gosei Co., Ltd.
- Masateru Yamazaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Composite substrate for light-emitting element and production metho...
- Patent number 9,893,234
- Issue date Feb 13, 2018
- NGK Insulators, Ltd.
- Morimichi Watanabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing SiC single crystal substrate in which a Cr sur...
- Patent number 9,873,955
- Issue date Jan 23, 2018
- Toyota Jidosha Kabushiki Kaisha
- Akinori Seki
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal and production method thereof
- Patent number 9,856,582
- Issue date Jan 2, 2018
- Fuji Electric Co., Ltd.
- Mina Ryo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor formation by lateral diffusion liquid phase epitaxy
- Patent number 9,824,892
- Issue date Nov 21, 2017
- McMaster University
- Adrian Kitai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride bulk crystals and their fabrication method
- Patent number 9,790,617
- Issue date Oct 17, 2017
- Sixpoint Materials, Inc.
- Tadao Hashimoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Article comprising a semiconducting material
- Patent number 9,777,405
- Issue date Oct 3, 2017
- The Florida State University Research Foundation, Inc.
- Jeffrey Whalen
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single-crystal ingot, SiC single crystal, and production method...
- Patent number 9,732,436
- Issue date Aug 15, 2017
- Toyota Jidosha Kabushiki Kaisha
- Takayuki Shirai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Production apparatus and production method of SiC single crystal
- Patent number 9,732,441
- Issue date Aug 15, 2017
- Nippon Steel & Sumitomo Metal Corporation
- Kazuhiko Kusunoki
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
SYNTHETIC SINGLE CRYSTAL DIAMOND AND METHOD FOR PRODUCING THE SAME
- Publication number 20240287706
- Publication date Aug 29, 2024
- Sumitomo Electric Industries, Ltd.
- Hitoshi SUMIYA
- C30 - CRYSTAL GROWTH
Information Patent Application
SYNTHETIC SINGLE CRYSTAL DIAMOND AND METHOD FOR PRODUCING THE SAME
- Publication number 20240279843
- Publication date Aug 22, 2024
- Sumitomo Electric Industries, Ltd.
- Hitoshi SUMIYA
- C30 - CRYSTAL GROWTH
Information Patent Application
SYNTHETIC DIAMOND FROM A LEVITATING SUPERSATURATED SOLVENT AT LOW P...
- Publication number 20240150936
- Publication date May 9, 2024
- Cosmic Diamonds LLC
- Stephen ROYS
- C30 - CRYSTAL GROWTH
Information Patent Application
SYNTHETIC SINGLE CRYSTAL DIAMOND AND METHOD FOR PRODUCING SAME
- Publication number 20230383436
- Publication date Nov 30, 2023
- Sumitomo Electric Industries, Ltd.
- Hitoshi SUMIYA
- C30 - CRYSTAL GROWTH
Information Patent Application
SYNTHESIS OF H-BN USING METALLIC SOLVENT AND HIGH-TEMPERATURE SOAKS
- Publication number 20230374695
- Publication date Nov 23, 2023
- NS Nanotech, Inc.
- Evrard LACROIX
- C30 - CRYSTAL GROWTH
Information Patent Application
SYNTHETIC SINGLE CRYSTAL DIAMOND AND METHOD FOR MANUFACTURING SAME
- Publication number 20230220584
- Publication date Jul 13, 2023
- Sumitomo Electric Industries, Ltd.
- Hitoshi SUMIYA
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Application
SYNTHETIC SINGLE CRYSTAL DIAMOND, TOOL INCLUDING THE SAME AND METHO...
- Publication number 20220411963
- Publication date Dec 29, 2022
- Sumitomo Electric Industries, Ltd.
- Yoshiki NISHIBAYASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of producing substrates including gallium nitride
- Publication number 20200411718
- Publication date Dec 31, 2020
- NGK Insulators, Ltd.
- Shuhei Higashihara
- C30 - CRYSTAL GROWTH
Information Patent Application
SYNTHETIC SINGLE CRYSTAL DIAMOND, TOOL AND METHOD OF PRODUCING SYNT...
- Publication number 20200325596
- Publication date Oct 15, 2020
- Sumitomo Electric Industries, Ltd.
- Hitoshi SUMIYA
- C01 - INORGANIC CHEMISTRY
Information Patent Application
SPINEL PARTICLES, METHOD FOR PRODUCING SAME AND COMPOSITION AND MOL...
- Publication number 20200308014
- Publication date Oct 1, 2020
- DIC CORPORATION
- Hironobu Oki
- C01 - INORGANIC CHEMISTRY
Information Patent Application
SYNTHETIC SINGLE CRYSTAL DIAMOND
- Publication number 20200283927
- Publication date Sep 10, 2020
- Sumitomo Electric Industries, Ltd.
- Hitoshi SUMIYA
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon-Based Molten Composition And Method For Manufacturing Silic...
- Publication number 20190106806
- Publication date Apr 11, 2019
- LG CHEM, LTD.
- Chan Yeup Chung
- C01 - INORGANIC CHEMISTRY
Information Patent Application
SILICON-BASED MOLTEN COMPOSITION AND MANUFACTURING METHOD OF SIC SI...
- Publication number 20180245235
- Publication date Aug 30, 2018
- LG CHEM, LTD.
- Chan Yeup Chung
- C30 - CRYSTAL GROWTH
Information Patent Application
ARTICLE COMPRISING A SEMICONDUCTING MATERIAL
- Publication number 20180023213
- Publication date Jan 25, 2018
- The Florida State University Research Foundation, Inc.
- Jeffrey Whalen
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GALLIUM NITRIDE CRYSTAL
- Publication number 20170022629
- Publication date Jan 26, 2017
- RICOH COMPANY, LTD.
- Takashi SATOH
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING N-TYPE GROUP III NITRIDE SINGLE CRYSTAL, N-TYP...
- Publication number 20160362815
- Publication date Dec 15, 2016
- RICOH COMPANY, LTD.
- Hirokazu IWATA
- C30 - CRYSTAL GROWTH
Information Patent Application
COMPOSITE SUBSTRATE FOR LIGHT-EMITTING ELEMENT AND PRODUCTION METHO...
- Publication number 20160293800
- Publication date Oct 6, 2016
- NGK Insulators, Ltd.
- Morimichi WATANABE
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Crystallizing Group IV Semiconductor, and Film Forming A...
- Publication number 20160244892
- Publication date Aug 25, 2016
- TOKYO ELECTRON LIMITED
- Kazuya TAKAHASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR, AND CRUCIBLE...
- Publication number 20160160381
- Publication date Jun 9, 2016
- Toyoda Gosei Co., Ltd.
- Masateru YAMAZAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
ARTICLE COMPRISING A SEMICONDUCTING MATERIAL
- Publication number 20150203992
- Publication date Jul 23, 2015
- The Florida State University Research Foundation, Inc.
- Jeffrey Whalen
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING N-TYPE GROUP III NITRIDE SINGLE CRYSTAL, N-TYP...
- Publication number 20140369917
- Publication date Dec 18, 2014
- RICOH COMPANY, LTD.
- Hirokazu Iwata
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Etching a Group III Nitride Semiconductor, Method for Pr...
- Publication number 20140363954
- Publication date Dec 11, 2014
- Shohei Kumegawa
- C30 - CRYSTAL GROWTH
Information Patent Application
Wide Band Gap Semiconductor Wafers Grown and processed in a Microgr...
- Publication number 20140353682
- Publication date Dec 4, 2014
- MASTERSON INDUSTRIES, LLC
- William F. Seng
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PURIFYING SILICON
- Publication number 20140338587
- Publication date Nov 20, 2014
- CALISOLAR, INC.
- Scott Nichol
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of Producing Crystals of Nitrides of Group 13 Elements and M...
- Publication number 20140305369
- Publication date Oct 16, 2014
- NGK Insulators, Ltd.
- Masahiro Sakai
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP 13 NITRIDE CRYSTAL AND METHOD FOR PRODUCTION OF GROUP 13 NITR...
- Publication number 20140271439
- Publication date Sep 18, 2014
- RICOH COMPANY, LTD.
- JUNICHI WADA
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor Light-Emitting Element and Laminate Containing Same
- Publication number 20140158978
- Publication date Jun 12, 2014
- NGK Insulators, Ltd.
- Makoto Iwai
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Peeling Group 13 Element Nitride Film
- Publication number 20140147953
- Publication date May 29, 2014
- NGK Insulators, Ltd.
- Makoto Iwai
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE SEMICONDUCTOR SINGLE CRYSTAL, METHOD FOR PRODUCIN...
- Publication number 20140070370
- Publication date Mar 13, 2014
- Toyoda Gosei Co., Ltd.
- Shiro Yamazaki
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III ELEMENT NITRIDE CRYSTAL PRODUCING METHOD AND GROUP-III EL...
- Publication number 20140030549
- Publication date Jan 30, 2014
- RICOH COMPANY, LTD.
- Osamu Yamada
- C30 - CRYSTAL GROWTH

Metal solvents

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Synthetic single crystal diamond

Silicon-based molten composition and method for manufacturing silic...

Spinel particles, method for producing same and composition and mol...

Underlying substrate including a seed crystal layer of a group 13 n...

Silicon-based molten composition and manufacturing method of SiC si...

Method for producing Group III nitride semiconductor, seed substrat...

Silicon-based molten composition and manufacturing method of SiC si...

SiC single crystal and method for producing same

SiC single crystal and production method thereof

Article comprising a semiconducting material

Catalyst solvents for carbon nitride

Free-standing substrate, function element and method for producing...

N-type SiC single crystal and method for its production

Method of producing SiC single crystal

Group III nitride bulk crystals and their fabrication method

Method for producing nitride of group-13 element, and melt composition

GaN template substrate

Method for producing gallium nitride crystal

Seed crystal substrates, composite substrates and functional devices

Method for growing silicon carbide crystal

Method for growing silicon carbide crystal

Method for producing group III nitride semiconductor using a crucible

Composite substrate for light-emitting element and production metho...

Method for producing SiC single crystal substrate in which a Cr sur...

SiC single crystal and production method thereof

Semiconductor formation by lateral diffusion liquid phase epitaxy

Group III nitride bulk crystals and their fabrication method

Article comprising a semiconducting material

SiC single-crystal ingot, SiC single crystal, and production method...

Production apparatus and production method of SiC single crystal

Patents Applicationslast 30 patents

SYNTHETIC SINGLE CRYSTAL DIAMOND AND METHOD FOR PRODUCING THE SAME

SYNTHETIC SINGLE CRYSTAL DIAMOND AND METHOD FOR PRODUCING THE SAME

SYNTHETIC DIAMOND FROM A LEVITATING SUPERSATURATED SOLVENT AT LOW P...

SYNTHETIC SINGLE CRYSTAL DIAMOND AND METHOD FOR PRODUCING SAME

SYNTHESIS OF H-BN USING METALLIC SOLVENT AND HIGH-TEMPERATURE SOAKS

SYNTHETIC SINGLE CRYSTAL DIAMOND AND METHOD FOR MANUFACTURING SAME

SYNTHETIC SINGLE CRYSTAL DIAMOND, TOOL INCLUDING THE SAME AND METHO...

Method of producing substrates including gallium nitride

SYNTHETIC SINGLE CRYSTAL DIAMOND, TOOL AND METHOD OF PRODUCING SYNT...

SPINEL PARTICLES, METHOD FOR PRODUCING SAME AND COMPOSITION AND MOL...

SYNTHETIC SINGLE CRYSTAL DIAMOND

Silicon-Based Molten Composition And Method For Manufacturing Silic...

SILICON-BASED MOLTEN COMPOSITION AND MANUFACTURING METHOD OF SIC SI...

ARTICLE COMPRISING A SEMICONDUCTING MATERIAL

METHOD FOR PRODUCING GALLIUM NITRIDE CRYSTAL

METHOD FOR PRODUCING N-TYPE GROUP III NITRIDE SINGLE CRYSTAL, N-TYP...

COMPOSITE SUBSTRATE FOR LIGHT-EMITTING ELEMENT AND PRODUCTION METHO...

Method for Crystallizing Group IV Semiconductor, and Film Forming A...

METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR, AND CRUCIBLE...

ARTICLE COMPRISING A SEMICONDUCTING MATERIAL

METHOD FOR PRODUCING N-TYPE GROUP III NITRIDE SINGLE CRYSTAL, N-TYP...

Method for Etching a Group III Nitride Semiconductor, Method for Pr...

Wide Band Gap Semiconductor Wafers Grown and processed in a Microgr...

METHOD FOR PURIFYING SILICON

Method of Producing Crystals of Nitrides of Group 13 Elements and M...

GROUP 13 NITRIDE CRYSTAL AND METHOD FOR PRODUCTION OF GROUP 13 NITR...

Semiconductor Light-Emitting Element and Laminate Containing Same

Method for Peeling Group 13 Element Nitride Film

GROUP III NITRIDE SEMICONDUCTOR SINGLE CRYSTAL, METHOD FOR PRODUCIN...

GROUP III ELEMENT NITRIDE CRYSTAL PRODUCING METHOD AND GROUP-III EL...