Multilevel memory cell aspects

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CPC
G11C2211/561

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GPHYSICS G11Information storage G11CSTATIC STORES G11C2211/00Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements Storage elements therefor

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G11C2211/561Multilevel memory cell aspects

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Patents Grantslast 30 patents

Information Patent Grant
Back-side memory element with local memory select transistor
- Patent number 12,167,612
- Issue date Dec 10, 2024
- International Business Machines Corporation
- Arvind Kumar
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction device and method of forming same
- Patent number 12,154,608
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bo-Jhih Shen
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction device and method of forming same
- Patent number 11,990,167
- Issue date May 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bo-Jhih Shen
- G01 - MEASURING TESTING
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,957,064
- Issue date Apr 9, 2024
- United Microelectronics Corp.
- Hui-Lin Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor structure integrated with magnetic tunneling junction
- Patent number 11,930,645
- Issue date Mar 12, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Alexander Kalnitsky
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor storage device and method of manufacturing semiconduc...
- Patent number 11,895,839
- Issue date Feb 6, 2024
- Kioxia Corporation
- Hideto Takekida
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,849,648
- Issue date Dec 19, 2023
- United Microelectronics Corp.
- Hui-Lin Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory management device, system and method
- Patent number 11,749,343
- Issue date Sep 5, 2023
- STMICROELECTRONICS INTERNATIONAL N.V.
- Nitin Chawla
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Double interleaved programming of a memory device in a memory sub-s...
- Patent number 11,699,491
- Issue date Jul 11, 2023
- Micron Technology, Inc.
- Phong Sy Nguyen
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-layer code with low parity cost for memory sub-systems
- Patent number 11,676,679
- Issue date Jun 13, 2023
- Micron Technology, Inc.
- Sanjay Subbarao
- G11 - INFORMATION STORAGE
Information Patent Grant
Devices having a transistor and a capacitor along a common horizont...
- Patent number 11,626,406
- Issue date Apr 11, 2023
- Micron Technology, Inc.
- Fredrick D. Fishburn
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor structure integrated with magnetic tunneling junction
- Patent number 11,600,661
- Issue date Mar 7, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Alexander Kalnitsky
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,508,904
- Issue date Nov 22, 2022
- United Microelectronics Corp.
- Hui-Lin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structured pedestal for MTJ containing devices
- Patent number 11,502,243
- Issue date Nov 15, 2022
- International Business Machines Corporation
- Nathan P. Marchack
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interleaved two-pass data programming techniques with reduced write...
- Patent number 11,430,526
- Issue date Aug 30, 2022
- Micron Technology, Inc.
- Phong Sy Nguyen
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuit device
- Patent number 11,417,378
- Issue date Aug 16, 2022
- TOHOKU UNIVERSITY
- Tetsuo Endoh
- G11 - INFORMATION STORAGE
Information Patent Grant
Systems for adaptively determining read threshold voltage using met...
- Patent number 11,342,027
- Issue date May 24, 2022
- SK Hynix Inc.
- Meysam Asadi
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory management device, system and method
- Patent number 11,257,543
- Issue date Feb 22, 2022
- STMICROELECTRONICS INTERNATIONAL N.V.
- Nitin Chawla
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Programming memory cells using encoded TLC-fine
- Patent number 11,177,002
- Issue date Nov 16, 2021
- SanDisk Technologies LLC
- Xue Pitner
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Two-layer code with low parity cost for memory sub-systems
- Patent number 11,164,652
- Issue date Nov 2, 2021
- Micron Technology, Inc.
- Sanjay Subbarao
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Reinforced single element bottom electrode for MTJ-containing devices
- Patent number 11,152,563
- Issue date Oct 19, 2021
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having magnetic tunnel junction (MTJ) stack
- Patent number 11,127,788
- Issue date Sep 21, 2021
- Taiwan Semiconductor Manufacturing Company Limited
- Baohua Niu
- G01 - MEASURING TESTING
Information Patent Grant
Back-side memory element with local memory select transistor
- Patent number 11,101,318
- Issue date Aug 24, 2021
- International Business Machines Corporation
- Arvind Kumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices having a transistor and a capacitor along a common horizont...
- Patent number 11,081,487
- Issue date Aug 3, 2021
- Micron Technology, Inc.
- Fredrick D. Fishburn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,063,206
- Issue date Jul 13, 2021
- United Microelectronics Corp.
- Hui-Lin Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction device and method of forming same
- Patent number 11,043,251
- Issue date Jun 22, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bo-Jhih Shen
- G01 - MEASURING TESTING
Information Patent Grant
Semiconductor structure integrated with magnetic tunneling junction
- Patent number 11,037,982
- Issue date Jun 15, 2021
- Taiwan Semiconductor Manufacturing Company Ltd.
- Alexander Kalnitsky
- G01 - MEASURING TESTING
Information Patent Grant
Nonvolatile memory device including two-dimensional material and ap...
- Patent number 11,024,748
- Issue date Jun 1, 2021
- Samsung Electronics Co., Ltd.
- Jaeho Lee
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Multi-state memory and method for manufacturing the same
- Patent number 10,991,877
- Issue date Apr 27, 2021
- Institute of Microelectronics, Chinese Academy of Sciences
- Meiyin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive stacks and methods therefor
- Patent number 10,971,545
- Issue date Apr 6, 2021
- EVERSPIN TECHNOLOGIES, INC.
- Sanjeev Aggarwal
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20240341102
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- ALEXANDER KALNITSKY
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240260481
- Publication date Aug 1, 2024
- UNITED MICROELECTRONICS CORP.
- Hui-Lin Wang
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240081157
- Publication date Mar 7, 2024
- UNITED MICROELECTRONICS CORP.
- Hui-Lin Wang
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240074328
- Publication date Feb 29, 2024
- UNITED MICROELECTRONICS CORP.
- Hui-Lin Wang
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic Tunnel Junction Device and Method of Forming Same
- Publication number 20240021230
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Jhih Shen
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE, METHOD OF FABRICATING SEMICONDUCTOR DEVICE, A...
- Publication number 20230371277
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- ALEXANDER KALNITSKY
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STRUCTURE INTEGRATED WITH MAGNETIC TUNNELING JUNCTION
- Publication number 20230225136
- Publication date Jul 13, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- ALEXANDER KALNITSKY
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230038528
- Publication date Feb 9, 2023
- UNITED MICROELECTRONICS CORP.
- Hui-Lin Wang
- G11 - INFORMATION STORAGE
Information Patent Application
DOUBLE INTERLEAVED PROGRAMMING OF A MEMORY DEVICE IN A MEMORY SUB-S...
- Publication number 20220199165
- Publication date Jun 23, 2022
- Micron Technology, Inc.
- Phong Sy Nguyen
- G11 - INFORMATION STORAGE
Information Patent Application
Interleaved Two-Pass Data Programming Techniques with Reduced Write...
- Publication number 20220199172
- Publication date Jun 23, 2022
- Micron Technology, Inc.
- Phong Sy Nguyen
- G11 - INFORMATION STORAGE
Information Patent Application
SYSTEMS FOR ADAPTIVELY DETERMINING READ THRESHOLD VOLTAGE USING MET...
- Publication number 20220165336
- Publication date May 26, 2022
- SK HYNIX INC.
- Meysam ASADI
- G11 - INFORMATION STORAGE
Information Patent Application
Two-Layer Code with Low Parity Cost for Memory Sub-Systems
- Publication number 20210407612
- Publication date Dec 30, 2021
- Micron Technology, Inc.
- Sanjay Subbarao
- G11 - INFORMATION STORAGE
Information Patent Application
Devices Having a Transistor and a Capacitor Along a Common Horizont...
- Publication number 20210343719
- Publication date Nov 4, 2021
- Micron Technology, Inc.
- Fredrick D. Fishburn
- G11 - INFORMATION STORAGE
Information Patent Application
BACK-SIDE MEMORY ELEMENT WITH LOCAL MEMORY SELECT TRANSISTOR
- Publication number 20210313391
- Publication date Oct 7, 2021
- International Business Machines Corporation
- Arvind Kumar
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION DEVICE AND METHOD OF FORMING SAME
- Publication number 20210312965
- Publication date Oct 7, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Jhih Shen
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STRUCTURE INTEGRATED WITH MAGNETIC TUNNELING JUNCTION
- Publication number 20210305317
- Publication date Sep 30, 2021
- Taiwan Semiconductor Manufacturing company Ltd.
- ALEXANDER KALNITSKY
- G01 - MEASURING TESTING
Information Patent Application
INTEGRATED CIRCUIT DEVICE
- Publication number 20210110857
- Publication date Apr 15, 2021
- Tohoku University
- Tetsuo Endoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY MANAGEMENT DEVICE, SYSTEM AND METHOD
- Publication number 20200411089
- Publication date Dec 31, 2020
- STMicroelectronics International N.V.
- Nitin CHAWLA
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Two-Layer Code with Low Parity Cost for Memory Sub-Systems
- Publication number 20200402605
- Publication date Dec 24, 2020
- Micron Technology, Inc.
- Sanjay Subbarao
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
MULTI-STATE MEMORY AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20200303635
- Publication date Sep 24, 2020
- INSTITUTE OF MICROELECTRONICS, CHINESES ACADEMY OF SCIENCES
- Meiyin YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Devices Having a Transistor and a Capacitor Along a Common Horizont...
- Publication number 20200295007
- Publication date Sep 17, 2020
- Micron Technology, Inc.
- Fredrick D. Fishburn
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20200106000
- Publication date Apr 2, 2020
- UNITED MICROELECTRONICS CORP.
- Chiu-Jung Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC WALL UTILIZATION-ANALOG MEMORY ELEMENT AND MAGNETIC WALL U...
- Publication number 20200013457
- Publication date Jan 9, 2020
- TDK Corporation
- Tomoyuki SASAKI
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Multi-Bit Cell Read-Out Techniques
- Publication number 20200013454
- Publication date Jan 9, 2020
- Spin Memory, Inc.
- Michail Tzoufras
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
QUANTUM SHIFT REGISTER INCORPORATING BIFURCATION
- Publication number 20190392913
- Publication date Dec 26, 2019
- equal1.labs Inc.
- Dirk Robert Walter Leipold
- B82 - NANO-TECHNOLOGY
Information Patent Application
QUANTUM SHIFT REGISTER BASED ANCILLARY QUANTUM INTERACTION GATES
- Publication number 20190392912
- Publication date Dec 26, 2019
- equal1.labs Inc.
- Dirk Robert Walter Leipold
- B82 - NANO-TECHNOLOGY
Information Patent Application
SOT-MRAM AND METHOD FOR WRITING DATA THEREOF
- Publication number 20190362765
- Publication date Nov 28, 2019
- Korea University Research and Business Foundation
- Jongsun PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY SYSTEM, READING METHOD, PROGRAM, AND MEMORY CONTROLLER
- Publication number 20190279728
- Publication date Sep 12, 2019
- Toshiba Memory Corporation
- Tomoya KODAMA
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
BACK-SIDE MEMORY ELEMENT WITH LOCAL MEMORY SELECT TRANSISTOR
- Publication number 20190259807
- Publication date Aug 22, 2019
- International Business Machines Corporation
- Arvind Kumar
- G11 - INFORMATION STORAGE
Information Patent Application
Devices Having a Transistor and a Capacitor Along a Common Horizont...
- Publication number 20190181142
- Publication date Jun 13, 2019
- Micron Technology, Inc.
- Fredrick D. Fishburn
- G11 - INFORMATION STORAGE

Multilevel memory cell aspects

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Back-side memory element with local memory select transistor

Magnetic tunnel junction device and method of forming same

Magnetic tunnel junction device and method of forming same

Semiconductor device and method for fabricating the same

Semiconductor structure integrated with magnetic tunneling junction

Semiconductor storage device and method of manufacturing semiconduc...

Semiconductor device and method for fabricating the same

Memory management device, system and method

Double interleaved programming of a memory device in a memory sub-s...

Two-layer code with low parity cost for memory sub-systems

Devices having a transistor and a capacitor along a common horizont...

Semiconductor structure integrated with magnetic tunneling junction

Semiconductor device and method for fabricating the same

Structured pedestal for MTJ containing devices

Interleaved two-pass data programming techniques with reduced write...

Integrated circuit device

Systems for adaptively determining read threshold voltage using met...

Memory management device, system and method

Programming memory cells using encoded TLC-fine

Two-layer code with low parity cost for memory sub-systems

Reinforced single element bottom electrode for MTJ-containing devices

Semiconductor device having magnetic tunnel junction (MTJ) stack

Back-side memory element with local memory select transistor

Devices having a transistor and a capacitor along a common horizont...

Semiconductor device and method for fabricating the same

Magnetic tunnel junction device and method of forming same

Semiconductor structure integrated with magnetic tunneling junction

Nonvolatile memory device including two-dimensional material and ap...

Multi-state memory and method for manufacturing the same

Magnetoresistive stacks and methods therefor

Patents Applicationslast 30 patents

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Magnetic Tunnel Junction Device and Method of Forming Same

SEMICONDUCTOR DEVICE, METHOD OF FABRICATING SEMICONDUCTOR DEVICE, A...

SEMICONDUCTOR STRUCTURE INTEGRATED WITH MAGNETIC TUNNELING JUNCTION

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

DOUBLE INTERLEAVED PROGRAMMING OF A MEMORY DEVICE IN A MEMORY SUB-S...

Interleaved Two-Pass Data Programming Techniques with Reduced Write...

SYSTEMS FOR ADAPTIVELY DETERMINING READ THRESHOLD VOLTAGE USING MET...

Two-Layer Code with Low Parity Cost for Memory Sub-Systems

Devices Having a Transistor and a Capacitor Along a Common Horizont...

BACK-SIDE MEMORY ELEMENT WITH LOCAL MEMORY SELECT TRANSISTOR

MAGNETIC TUNNEL JUNCTION DEVICE AND METHOD OF FORMING SAME

SEMICONDUCTOR STRUCTURE INTEGRATED WITH MAGNETIC TUNNELING JUNCTION

INTEGRATED CIRCUIT DEVICE

MEMORY MANAGEMENT DEVICE, SYSTEM AND METHOD

Two-Layer Code with Low Parity Cost for Memory Sub-Systems

MULTI-STATE MEMORY AND METHOD FOR MANUFACTURING THE SAME

Devices Having a Transistor and a Capacitor Along a Common Horizont...

MAGNETORESISTANCE DEVICE AND METHOD FOR FORMING THE SAME

MAGNETIC WALL UTILIZATION-ANALOG MEMORY ELEMENT AND MAGNETIC WALL U...

Multi-Bit Cell Read-Out Techniques

QUANTUM SHIFT REGISTER INCORPORATING BIFURCATION

QUANTUM SHIFT REGISTER BASED ANCILLARY QUANTUM INTERACTION GATES

SOT-MRAM AND METHOD FOR WRITING DATA THEREOF

MEMORY SYSTEM, READING METHOD, PROGRAM, AND MEMORY CONTROLLER

BACK-SIDE MEMORY ELEMENT WITH LOCAL MEMORY SELECT TRANSISTOR

Devices Having a Transistor and a Capacitor Along a Common Horizont...