Multilevel memory with plate line or layer

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CPC
G11C2211/5649

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Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C2211/00Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements Storage elements therefor

Current Industry

G11C2211/5649Multilevel memory with plate line or layer

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Patents Grantslast 30 patents

Information Patent Grant
Rank-modulation rewriting codes for flash memories
- Patent number 9,916,197
- Issue date Mar 13, 2018
- California Institute of Technology
- Anxiao Jiang
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Rank-modulation rewriting codes for flash memories
- Patent number 9,086,955
- Issue date Jul 21, 2015
- California Institute of Technology
- Anxiao Jiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile semiconductor memory having plural data storage portion...
- Patent number 7,969,784
- Issue date Jun 28, 2011
- Kabushiki Kaisha Toshiba
- Ken Takeuchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-channel flash module with plane-interleaved sequential ECC wr...
- Patent number 7,966,462
- Issue date Jun 21, 2011
- Super Talent Electronics, Inc.
- Charles C. Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile semiconductor memory having plural data storage portion...
- Patent number 7,864,592
- Issue date Jan 4, 2011
- Kabushiki Kaisha Toshiba
- Ken Takeuchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device for storing multilevel data
- Patent number 7,768,829
- Issue date Aug 3, 2010
- Kabushiki Kaisha Toshiba
- Noboru Shibata
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device for storing multilevel data
- Patent number 7,471,559
- Issue date Dec 30, 2008
- Kabushiki Kaisha Toshiba
- Noboru Shibata
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile semiconductor memory having plural data storage portion...
- Patent number 7,394,695
- Issue date Jul 1, 2008
- Kabushiki Kaisha Toshiba
- Ken Takeuchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile semiconductor memory having plural data storage portion...
- Patent number 7,342,825
- Issue date Mar 11, 2008
- Kabushiki Kaisha Toshiba
- Ken Takeuchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile semiconductor memory having plural data storage portion...
- Patent number 7,196,932
- Issue date Mar 27, 2007
- Kabushiki Kaisha Toshiba
- Ken Takeuchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile semiconductor memory having plural data storage portion...
- Patent number 7,177,196
- Issue date Feb 13, 2007
- Kabushiki Kaisha Toshiba
- Ken Takeuchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile semiconductor memory having plural data storage portion...
- Patent number 6,373,746
- Issue date Apr 16, 2002
- Kabushiki Kaisha Toshiba
- Ken Takeuchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory device with NAND type cell structure
- Patent number 5,936,887
- Issue date Aug 10, 1999
- Samsung Electronics Co., Ltd.
- Jung-Dal Choi
- G11 - INFORMATION STORAGE
Information Patent Grant
High density non-volatile flash memory without adverse effects of e...
- Patent number 5,867,429
- Issue date Feb 2, 1999
- SanDisk Corporation
- Jian Chen
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MEMORY DEVICES AND METHODS HAVING WRITE DATA PERMUTATION FOR CELL W...
- Publication number 20140089560
- Publication date Mar 27, 2014
- ADESTO TECHNOLOGIES CORPORATION
- Ravi Sunkavalli
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
RANK-MODULATION REWRITING CODES FOR FLASH MEMORIES
- Publication number 20130254466
- Publication date Sep 26, 2013
- Texas A&M University System
- Anxiao Jiang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NONVOLATILE SEMICONDUCTOR MEMORY HAVING PLURAL DATA STORAGE PORTION...
- Publication number 20110096598
- Publication date Apr 28, 2011
- Kabushiki Kaisha Toshiba
- Ken Takeuchi
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE SEMICONDUCTOR MEMORY HAVING PLURAL DATA STORAGE PORTION...
- Publication number 20090323416
- Publication date Dec 31, 2009
- Kabushiki Kaisha Toshiba
- Ken Takeuchi
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE FOR STORING MULTILEVEL DATA
- Publication number 20090135648
- Publication date May 28, 2009
- Noboru Shibata
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE SEMICONDUCTOR MEMORY HAVING PLURAL DATA STORAGE PORTION...
- Publication number 20080266965
- Publication date Oct 30, 2008
- Kabushiki Kaisha Toshiba
- Ken Takeuchi
- G11 - INFORMATION STORAGE
Information Patent Application
Multi-Channel Flash Module with Plane-Interleaved Sequential ECC Wr...
- Publication number 20080034154
- Publication date Feb 7, 2008
- SUPER TALENT ELECTRONICS INC.
- Charles C. Lee
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE FOR STORING MULTILEVEL DATA
- Publication number 20070242527
- Publication date Oct 18, 2007
- Noboru Shibata
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE SEMICONDUCTOR MEMORY HAVING PLURAL DATA STORAGE PORTION...
- Publication number 20070223280
- Publication date Sep 27, 2007
- Kabushiki Kaisha Toshiba
- Ken Takeuchi
- G11 - INFORMATION STORAGE
Information Patent Application
Nonvolatile semiconductor memory having plural data storage portion...
- Publication number 20070058433
- Publication date Mar 15, 2007
- Kabushiki Kaisha Toshiba
- Ken Takeuchi
- G11 - INFORMATION STORAGE
Information Patent Application
Nonvolatile semiconductor memory having plural data storage portion...
- Publication number 20060146610
- Publication date Jul 6, 2006
- Kabushiki Kaisha Toshiba
- Ken Takeuchi
- G11 - INFORMATION STORAGE
Information Patent Application
Nonvolatile semiconductor memory having plural data storage portion...
- Publication number 20020114207
- Publication date Aug 22, 2002
- KABUSHIKI KAISHA TOSHIBA
- Ken Takeuchi
- G11 - INFORMATION STORAGE

Multilevel memory with plate line or layer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Rank-modulation rewriting codes for flash memories

Rank-modulation rewriting codes for flash memories

Nonvolatile semiconductor memory having plural data storage portion...

Multi-channel flash module with plane-interleaved sequential ECC wr...

Nonvolatile semiconductor memory having plural data storage portion...

Semiconductor memory device for storing multilevel data

Semiconductor memory device for storing multilevel data

Nonvolatile semiconductor memory having plural data storage portion...

Nonvolatile semiconductor memory having plural data storage portion...

Nonvolatile semiconductor memory having plural data storage portion...

Nonvolatile semiconductor memory having plural data storage portion...

Nonvolatile semiconductor memory having plural data storage portion...

Non-volatile memory device with NAND type cell structure

High density non-volatile flash memory without adverse effects of e...

Patents Applicationslast 30 patents

MEMORY DEVICES AND METHODS HAVING WRITE DATA PERMUTATION FOR CELL W...

RANK-MODULATION REWRITING CODES FOR FLASH MEMORIES

NONVOLATILE SEMICONDUCTOR MEMORY HAVING PLURAL DATA STORAGE PORTION...

NONVOLATILE SEMICONDUCTOR MEMORY HAVING PLURAL DATA STORAGE PORTION...

SEMICONDUCTOR MEMORY DEVICE FOR STORING MULTILEVEL DATA

NONVOLATILE SEMICONDUCTOR MEMORY HAVING PLURAL DATA STORAGE PORTION...

Multi-Channel Flash Module with Plane-Interleaved Sequential ECC Wr...

SEMICONDUCTOR MEMORY DEVICE FOR STORING MULTILEVEL DATA

NONVOLATILE SEMICONDUCTOR MEMORY HAVING PLURAL DATA STORAGE PORTION...

Nonvolatile semiconductor memory having plural data storage portion...

Nonvolatile semiconductor memory having plural data storage portion...

Nonvolatile semiconductor memory having plural data storage portion...