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H01L21/02576

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/02576N-type

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Ultrawide bandgap semiconductor devices including magnesium germani...
- Patent number 12,166,085
- Issue date Dec 10, 2024
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- C30 - CRYSTAL GROWTH
Information Patent Grant
Devices having a semiconductor material that is semimetal in bulk a...
- Patent number 12,148,816
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jean-Pierre Colinge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a shaped epitaxial region with shaping...
- Patent number 12,142,681
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Min Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cut metal gate in memory macro edge and middle strap
- Patent number 12,142,684
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Wen Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 12,132,119
- Issue date Oct 29, 2024
- Samsung Electronics Co., Ltd.
- Kihwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor light-emitting element and manufacturin...
- Patent number 12,119,618
- Issue date Oct 15, 2024
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Shuichi Nakazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress-inducing silicon liner in semiconductor devices
- Patent number 12,113,118
- Issue date Oct 8, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bwo-Ning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor structure, nitride semiconductor device, and...
- Patent number 12,100,936
- Issue date Sep 24, 2024
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Toshiyuki Takizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 12,100,735
- Issue date Sep 24, 2024
- Samsung Electronics Co., Ltd.
- Namkyu Edward Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming nitride semiconductor film
- Patent number 12,094,710
- Issue date Sep 17, 2024
- Tokyo Electron Limited
- Nobuaki Takahashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device with conformal source/drain layer
- Patent number 12,057,495
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yao-Sheng Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method for manufacturing same
- Patent number 12,057,498
- Issue date Aug 6, 2024
- Denso Corporation
- Yuichi Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain feature to contact interfaces
- Patent number 12,051,730
- Issue date Jul 30, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ding-Kang Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure
- Patent number 12,048,133
- Issue date Jul 23, 2024
- Semiconductor Manufacturing International (Shanghai) Corporation
- Nan Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a heterostructure or a stacked semiconducto...
- Patent number 12,027,592
- Issue date Jul 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Martin Christopher Holland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming structures including silicon germanium and silic...
- Patent number 11,996,289
- Issue date May 28, 2024
- ASM IP Holding B.V.
- Amir Kajbafvala
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
N-type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitri...
- Patent number 11,987,903
- Issue date May 21, 2024
- Mitsubishi Chemical Corporation
- Kenji Iso
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for growing beta-Ga2O3-based single crystal film, and crysta...
- Patent number 11,982,016
- Issue date May 14, 2024
- Tamura Corporation
- Ken Goto
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor structure, high electron mobility transistor and fabr...
- Patent number 11,967,642
- Issue date Apr 23, 2024
- Vanguard International Semiconductor Corporation
- Chih-Yen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide crystal
- Patent number 11,952,676
- Issue date Apr 9, 2024
- GlobalWafers Co., Ltd.
- Ching-Shan Lin
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride semiconductor with multiple nitride regions of different im...
- Patent number 11,955,520
- Issue date Apr 9, 2024
- Kabushiki Kaisha Toshiba
- Toshiki Hikosaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vapor phase epitaxy method
- Patent number 11,955,334
- Issue date Apr 9, 2024
- Azur Space Solar Power GmbH
- Gregor Keller
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Laminate of aluminum nitride single-crystal substrate
- Patent number 11,952,677
- Issue date Apr 9, 2024
- Tokuyama Corporation
- Masao Ariyuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Selective methods for fabricating devices and structures
- Patent number 11,948,796
- Issue date Apr 2, 2024
- Applied Materials, Inc.
- Yi-Chiau Huang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Self-aligned backside source contact structure
- Patent number 11,948,987
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Lung-Kun Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet field effect transistor with a source drain epitaxy repla...
- Patent number 11,942,374
- Issue date Mar 26, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-insensitive epitaxy formation
- Patent number 11,935,951
- Issue date Mar 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon wafer for an electronic component and method for the produc...
- Patent number 11,915,922
- Issue date Feb 27, 2024
- NexWafe GmbH
- Stefan Reber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having doped epitaxial region and its methods...
- Patent number 11,908,934
- Issue date Feb 20, 2024
- Intel Corporation
- Anand S. Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Coating liquid for forming n-type oxide semiconductor film, method...
- Patent number 11,908,945
- Issue date Feb 20, 2024
- Ricoh Company, Ltd.
- Naoyuki Ueda
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
REDUCED STRAIN AND STOP LAYER FOR Si/SiGe EPI STACKS
- Publication number 20240429048
- Publication date Dec 26, 2024
- Applied Materials, Inc.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING A PLANAR SEMICONDUCTOR SURFACE
- Publication number 20240429041
- Publication date Dec 26, 2024
- The Boeing Company
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR IMPROVING DOPANT ACTIVATION RATE AND STRUCTURE CREATED B...
- Publication number 20240404827
- Publication date Dec 5, 2024
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240395936
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fang-Liang LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A SHAPED EPITAXIAL REGION WITH SHAPING...
- Publication number 20240395937
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Min Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Devices Having a Semiconductor Material That Is Semimetal in Bulk a...
- Publication number 20240387711
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jean-Pierre Colinge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS-INDUCING SILICON LINER IN SEMICONDUCTOR DEVICES
- Publication number 20240379817
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bwo-Ning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CUT METAL GATE IN MEMORY MACRO EDGE AND MIDDLE STRAP
- Publication number 20240379851
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Hsin-Wen Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVATED CONTACT BATTERY AND PREPARATION PROCESS THEREFOR
- Publication number 20240371633
- Publication date Nov 7, 2024
- Tongwei Solar (Meishan) Co., Ltd.
- Hao CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/Drain Feature to Contact Interfaces
- Publication number 20240347611
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ding-Kang Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED SILICON-CONTAINING MATERIALS WITH INCREASED ELECTRICAL, MECHA...
- Publication number 20240332000
- Publication date Oct 3, 2024
- Applied Materials, Inc.
- Akhil Singhal
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR MANUFACTURING SIC SUBSTRATE
- Publication number 20240332012
- Publication date Oct 3, 2024
- Jusung Engineering Co., Ltd.
- Chul Joo HWANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EP...
- Publication number 20240297201
- Publication date Sep 5, 2024
- SUMCO CORPORATION
- Takeshi Kadono
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
n-TYPE GaN CRYSTAL, GaN WAFER, AND GaN CRYSTAL, GaN WAFER AND NITRI...
- Publication number 20240279844
- Publication date Aug 22, 2024
- MITSUBISHI CHEMICAL CORPORATION
- Kenji ISO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EP...
- Publication number 20240282801
- Publication date Aug 22, 2024
- SUMCO CORPORATION
- Takeshi KADONO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SILICON SUPER JUNCTION STRUCTURES FOR INCREASED THROUGHPUT
- Publication number 20240282813
- Publication date Aug 22, 2024
- Applied Materials, Inc.
- Amirhasan Nourbakhsh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING STRUCTURES INCLUDING SILICON GERMANIUM AND SILIC...
- Publication number 20240274437
- Publication date Aug 15, 2024
- ASM IP HOLDING B.V.
- Amir Kajbafvala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF GLASS DEPOSITION FOR SEMICONDUCTOR DEVICE FABRICATION
- Publication number 20240258099
- Publication date Aug 1, 2024
- Littelfuse Semiconductor (Wuxi) Co., Ltd
- Xingchong Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODE, FIELD EFFECT TRANSISTOR HAVING THE DIODE, AND METHOD FOR MAN...
- Publication number 20240250164
- Publication date Jul 25, 2024
- DENSO CORPORATION
- Masahiro KUMITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED BACKSIDE SOURCE CONTACT STRUCTURE
- Publication number 20240243178
- Publication date Jul 18, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Lung-Kun Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFUSION BARRIER LAYER FOR SOURCE AND DRAIN STRUCTURES TO INCREASE...
- Publication number 20240243174
- Publication date Jul 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuei-Ming Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH VERTICAL SIDEWALLS
- Publication number 20240243202
- Publication date Jul 18, 2024
- Intel Corporation
- Ritesh K. DAS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THERMAL MONITOR FOR HIGH PRESSURE PROCESSING
- Publication number 20240218560
- Publication date Jul 4, 2024
- ASM IP HOLDING B.V.
- Sandeep Ghosh
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF FORMING A CONFORMAL AND CONTINUOUS CRYSTALLINE SILICON NA...
- Publication number 20240222114
- Publication date Jul 4, 2024
- L'air Liquide, Societe Anonyme Pour L'Etude et L'Exploitation Des Procedes Ge...
- Claudia Fafard
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD, SYSTEM AND APPARATUS FOR FORMING EPITAXIAL TEMPLATE LAYER
- Publication number 20240222116
- Publication date Jul 4, 2024
- ASM IP HOLDING B.V.
- Gregory Deye
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF FORMING AN EPITAXIAL LAYER
- Publication number 20240203730
- Publication date Jun 20, 2024
- ASM IP HOLDING B.V.
- Rami Khazaka
- C30 - CRYSTAL GROWTH
Information Patent Application
DOUBLE CONTINUOUS GRADED BACK BARRIER GROUP III-NITRIDE HIGH ELECTR...
- Publication number 20240162341
- Publication date May 16, 2024
- Raytheon Company
- Maher Bishara Tahhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE LOW TEMPERATURE EPITAXIAL DEPOSITION PROCESS
- Publication number 20240153998
- Publication date May 9, 2024
- APPLIED MATERIALS, INC.
- Chen-Ying WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW TEMPERATURE CO-FLOW EPITAXIAL DEPOSITION PROCESS
- Publication number 20240145240
- Publication date May 2, 2024
- Applied Materials, Inc.
- Chen-Ying WU
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
CARBON-CONTAINING CAP LAYER FOR DOPED SEMICONDUCTOR EPITAXIAL LAYER
- Publication number 20240145550
- Publication date May 2, 2024
- Applied Materials, Inc.
- Jason JEWELL
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Ultrawide bandgap semiconductor devices including magnesium germani...

Devices having a semiconductor material that is semimetal in bulk a...

Semiconductor device having a shaped epitaxial region with shaping...

Cut metal gate in memory macro edge and middle strap

Semiconductor devices

Nitride-based semiconductor light-emitting element and manufacturin...

Stress-inducing silicon liner in semiconductor devices

Nitride semiconductor structure, nitride semiconductor device, and...

Semiconductor devices

Method of forming nitride semiconductor film

Semiconductor device with conformal source/drain layer

Silicon carbide semiconductor device and method for manufacturing same

Source/drain feature to contact interfaces

Semiconductor structure

Method of manufacturing a heterostructure or a stacked semiconducto...

Methods of forming structures including silicon germanium and silic...

N-type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitri...

Method for growing beta-Ga2O3-based single crystal film, and crysta...

Semiconductor structure, high electron mobility transistor and fabr...

Silicon carbide crystal

Nitride semiconductor with multiple nitride regions of different im...

Vapor phase epitaxy method

Laminate of aluminum nitride single-crystal substrate

Selective methods for fabricating devices and structures

Self-aligned backside source contact structure

Nanosheet field effect transistor with a source drain epitaxy repla...

Metal-insensitive epitaxy formation

Silicon wafer for an electronic component and method for the produc...

Semiconductor device having doped epitaxial region and its methods...

Coating liquid for forming n-type oxide semiconductor film, method...

Patents Applicationslast 30 patents

REDUCED STRAIN AND STOP LAYER FOR Si/SiGe EPI STACKS

FORMING A PLANAR SEMICONDUCTOR SURFACE

METHOD FOR IMPROVING DOPANT ACTIVATION RATE AND STRUCTURE CREATED B...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE HAVING A SHAPED EPITAXIAL REGION WITH SHAPING...

Devices Having a Semiconductor Material That Is Semimetal in Bulk a...

STRESS-INDUCING SILICON LINER IN SEMICONDUCTOR DEVICES

CUT METAL GATE IN MEMORY MACRO EDGE AND MIDDLE STRAP

PASSIVATED CONTACT BATTERY AND PREPARATION PROCESS THEREFOR

Source/Drain Feature to Contact Interfaces

DOPED SILICON-CONTAINING MATERIALS WITH INCREASED ELECTRICAL, MECHA...

METHOD FOR MANUFACTURING SIC SUBSTRATE

METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EP...

n-TYPE GaN CRYSTAL, GaN WAFER, AND GaN CRYSTAL, GaN WAFER AND NITRI...

METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EP...

SILICON SUPER JUNCTION STRUCTURES FOR INCREASED THROUGHPUT

METHODS OF FORMING STRUCTURES INCLUDING SILICON GERMANIUM AND SILIC...

METHOD OF GLASS DEPOSITION FOR SEMICONDUCTOR DEVICE FABRICATION

DIODE, FIELD EFFECT TRANSISTOR HAVING THE DIODE, AND METHOD FOR MAN...

SELF-ALIGNED BACKSIDE SOURCE CONTACT STRUCTURE

DIFFUSION BARRIER LAYER FOR SOURCE AND DRAIN STRUCTURES TO INCREASE...

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH VERTICAL SIDEWALLS

THERMAL MONITOR FOR HIGH PRESSURE PROCESSING

METHOD OF FORMING A CONFORMAL AND CONTINUOUS CRYSTALLINE SILICON NA...

METHOD, SYSTEM AND APPARATUS FOR FORMING EPITAXIAL TEMPLATE LAYER

METHOD OF FORMING AN EPITAXIAL LAYER

DOUBLE CONTINUOUS GRADED BACK BARRIER GROUP III-NITRIDE HIGH ELECTR...

SELECTIVE LOW TEMPERATURE EPITAXIAL DEPOSITION PROCESS

LOW TEMPERATURE CO-FLOW EPITAXIAL DEPOSITION PROCESS

CARBON-CONTAINING CAP LAYER FOR DOPED SEMICONDUCTOR EPITAXIAL LAYER