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H01L21/02576

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/02576N-type

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Remote capacitively coupled plasma deposition of amorphous silicon
- Patent number 12,365,986
- Issue date Jul 22, 2025
- Applied Materials, Inc.
- Zubin Huang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Epitaxial growth methods and structures thereof
- Patent number 12,369,374
- Issue date Jul 22, 2025
- Taiwan Semicoductor Manufacturing Co., Ltd.
- Tetsuji Ueno
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
n-Type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitri...
- Patent number 12,351,943
- Issue date Jul 8, 2025
- Mitsubishi Chemical Corporation
- Kenji Iso
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor devices and methods of manufacturing the same
- Patent number 12,354,899
- Issue date Jul 8, 2025
- Samsung Electronics Co., Ltd.
- Taeyong Kwon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
N-type SNS thin film, photoelectric conversion element, solar cell,...
- Patent number 12,342,655
- Issue date Jun 24, 2025
- Tohoku University
- Issei Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial wafer, semiconductor device, and method for manufacturing...
- Patent number 12,334,340
- Issue date Jun 17, 2025
- Mitsubishi Electric Corporation
- Atsushi Era
- C30 - CRYSTAL GROWTH
Information Patent Grant
Vapor deposition device and method of producing epitaxial wafer
- Patent number 12,327,724
- Issue date Jun 10, 2025
- Epicrew Corporation
- Akira Okabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for CVD deposition of n-type doped silicon carbide and epita...
- Patent number 12,325,932
- Issue date Jun 10, 2025
- LPE S.P.A.
- Silvio Preti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Growth structure for a radiation-emitting semiconductor component,...
- Patent number 12,324,275
- Issue date Jun 3, 2025
- Osram Opto Semiconductors GmbH
- Andreas Koller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,308,371
- Issue date May 20, 2025
- NATIONAL TAIWAN UNIVERSITY
- Fang-Liang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for semiconductor silicon wafer
- Patent number 12,308,228
- Issue date May 20, 2025
- Globalwafers Japan Co., Ltd
- Takeshi Senda
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for low temperature selective epitaxy in a dee...
- Patent number 12,297,559
- Issue date May 13, 2025
- Applied Materials, Inc.
- Abhishek Dube
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High resistivity silicon-on-insulator substrate comprising an isola...
- Patent number 12,300,535
- Issue date May 13, 2025
- GlobalWafers Co., Ltd.
- Igor Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having doped epitaxial region and its methods...
- Patent number 12,294,027
- Issue date May 6, 2025
- Intel Corporation
- Anand S. Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diamond semiconductor system and method
- Patent number 12,288,690
- Issue date Apr 29, 2025
- AKHAN SEMICONDUCTOR, INC.
- Adam Khan
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Ultrawide bandgap semiconductor devices including magnesium germani...
- Patent number 12,266,697
- Issue date Apr 1, 2025
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field stop IGBT with grown injection region
- Patent number 12,262,553
- Issue date Mar 25, 2025
- iPower Semiconductor
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride drain structures and methods of forming the same
- Patent number 12,255,232
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chi-Ming Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned gate endcap (SAGE) architectures with vertical sidewalls
- Patent number 12,230,714
- Issue date Feb 18, 2025
- Intel Corporation
- Ritesh K. Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a beta-Ga2O3-based single crystal film by f...
- Patent number 12,230,500
- Issue date Feb 18, 2025
- Tamura Corporation
- Quang Tu Thieu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Self-aligned gate endcap (SAGE) architectures with vertical sidewalls
- Patent number 12,224,349
- Issue date Feb 11, 2025
- Intel Corporation
- Ritesh K. Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact architecture for capacitance reduction and satisfactory con...
- Patent number 12,224,326
- Issue date Feb 11, 2025
- Intel Corporation
- Rishabh Mehandru
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group IIIA nitride growth system and method
- Patent number 12,211,690
- Issue date Jan 28, 2025
- Robbie J. Jorgenson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preparation method for semiconductor structure
- Patent number 12,183,576
- Issue date Dec 31, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Peng Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultrawide bandgap semiconductor devices including magnesium germani...
- Patent number 12,166,085
- Issue date Dec 10, 2024
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- C30 - CRYSTAL GROWTH
Information Patent Grant
Devices having a semiconductor material that is semimetal in bulk a...
- Patent number 12,148,816
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jean-Pierre Colinge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a shaped epitaxial region with shaping...
- Patent number 12,142,681
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Min Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cut metal gate in memory macro edge and middle strap
- Patent number 12,142,684
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Wen Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 12,132,119
- Issue date Oct 29, 2024
- Samsung Electronics Co., Ltd.
- Kihwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor light-emitting element and manufacturin...
- Patent number 12,119,618
- Issue date Oct 15, 2024
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Shuichi Nakazawa
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LOW-RESISTANCE SOURCE/DRAIN FEATURES
- Publication number 20250234610
- Publication date Jul 17, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Min Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPPRESSION OF DOPANT HYDRIDE EVOLUTION FROM EPITAXIAL FILMS IN INT...
- Publication number 20250218777
- Publication date Jul 3, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Michael Todd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPPRESSION OF AUTO-DOPING DURING EPITAXIAL GROWTH OF EPITAXY LAYER...
- Publication number 20250212475
- Publication date Jun 26, 2025
- NEXPERIA B.V.
- Tim Böttcher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnesium Group IV Oxides
- Publication number 20250212474
- Publication date Jun 26, 2025
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE DRAIN STRUCTURES AND METHODS OF FORMING THE SAME
- Publication number 20250194188
- Publication date Jun 12, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Ming CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20250169132
- Publication date May 22, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chang LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH VERTICAL SIDEWALLS
- Publication number 20250151318
- Publication date May 8, 2025
- Intel Corporation
- Ritesh K. DAS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT ARCHITECTURE FOR CAPACITANCE REDUCTION AND SATISFACTORY CON...
- Publication number 20250151363
- Publication date May 8, 2025
- Intel Corporation
- Rishabh MEHANDRU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD, SYSTEM AND APPARATUS FOR FORMING ANISOTROPIC LAYER
- Publication number 20250112042
- Publication date Apr 3, 2025
- ASM IP HOLDING B.V.
- Gregory Deye
- C30 - CRYSTAL GROWTH
Information Patent Application
SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR...
- Publication number 20250105007
- Publication date Mar 27, 2025
- Kokusai Electric Corporation
- Yugo ORIHASHI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SUBSTRATE-PROCESSING METHOD AND SUBSTRATE-PROCESSING DEVICE
- Publication number 20250079171
- Publication date Mar 6, 2025
- TOKYO ELECTRON LIMITED
- Tatsuya MIYAHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM OXIDE SEMICONDUCTOR DEVICE WITH ENHANCED OHMIC CONTACT PROP...
- Publication number 20250081567
- Publication date Mar 6, 2025
- POWER CUBESEMI INC.
- Tai Young KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING ELECTRICAL ACTIVITY OF DEFECTS IN SILICON CARBIDE GROWN ON...
- Publication number 20250059674
- Publication date Feb 20, 2025
- Anvil Semiconductors Ltd
- Martin Steven Mark LAMB
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING ION IMPLAN...
- Publication number 20250014902
- Publication date Jan 9, 2025
- INFINEON TECHNOLOGIES AG
- Axel König
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH ANTIMONY AND PHOSPHORUS DOPED EPITAXIAL SOURCE/DRA...
- Publication number 20250006790
- Publication date Jan 2, 2025
- Intel Corporation
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED STRAIN AND STOP LAYER FOR Si/SiGe EPI STACKS
- Publication number 20240429048
- Publication date Dec 26, 2024
- Applied Materials, Inc.
- Ruiying HAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING A PLANAR SEMICONDUCTOR SURFACE
- Publication number 20240429041
- Publication date Dec 26, 2024
- The Boeing Company
- Shanying Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR IMPROVING DOPANT ACTIVATION RATE AND STRUCTURE CREATED B...
- Publication number 20240404827
- Publication date Dec 5, 2024
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240395936
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fang-Liang LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A SHAPED EPITAXIAL REGION WITH SHAPING...
- Publication number 20240395937
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Min Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Devices Having a Semiconductor Material That Is Semimetal in Bulk a...
- Publication number 20240387711
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jean-Pierre Colinge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS-INDUCING SILICON LINER IN SEMICONDUCTOR DEVICES
- Publication number 20240379817
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bwo-Ning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CUT METAL GATE IN MEMORY MACRO EDGE AND MIDDLE STRAP
- Publication number 20240379851
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Hsin-Wen Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVATED CONTACT BATTERY AND PREPARATION PROCESS THEREFOR
- Publication number 20240371633
- Publication date Nov 7, 2024
- Tongwei Solar (Meishan) Co., Ltd.
- Hao CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/Drain Feature to Contact Interfaces
- Publication number 20240347611
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ding-Kang Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED SILICON-CONTAINING MATERIALS WITH INCREASED ELECTRICAL, MECHA...
- Publication number 20240332000
- Publication date Oct 3, 2024
- Applied Materials, Inc.
- Akhil Singhal
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR MANUFACTURING SIC SUBSTRATE
- Publication number 20240332012
- Publication date Oct 3, 2024
- Jusung Engineering Co., Ltd.
- Chul Joo HWANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EP...
- Publication number 20240297201
- Publication date Sep 5, 2024
- SUMCO CORPORATION
- Takeshi Kadono
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
n-TYPE GaN CRYSTAL, GaN WAFER, AND GaN CRYSTAL, GaN WAFER AND NITRI...
- Publication number 20240279844
- Publication date Aug 22, 2024
- MITSUBISHI CHEMICAL CORPORATION
- Kenji ISO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EP...
- Publication number 20240282801
- Publication date Aug 22, 2024
- SUMCO CORPORATION
- Takeshi KADONO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Remote capacitively coupled plasma deposition of amorphous silicon

Epitaxial growth methods and structures thereof

n-Type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitri...

Semiconductor devices and methods of manufacturing the same

N-type SNS thin film, photoelectric conversion element, solar cell,...

Epitaxial wafer, semiconductor device, and method for manufacturing...

Vapor deposition device and method of producing epitaxial wafer

Method for CVD deposition of n-type doped silicon carbide and epita...

Growth structure for a radiation-emitting semiconductor component,...

Semiconductor device and manufacturing method thereof

Manufacturing method for semiconductor silicon wafer

Method and apparatus for low temperature selective epitaxy in a dee...

High resistivity silicon-on-insulator substrate comprising an isola...

Semiconductor device having doped epitaxial region and its methods...

Diamond semiconductor system and method

Ultrawide bandgap semiconductor devices including magnesium germani...

Field stop IGBT with grown injection region

Gallium nitride drain structures and methods of forming the same

Self-aligned gate endcap (SAGE) architectures with vertical sidewalls

Method of manufacturing a beta-Ga2O3-based single crystal film by f...

Self-aligned gate endcap (SAGE) architectures with vertical sidewalls

Contact architecture for capacitance reduction and satisfactory con...

Group IIIA nitride growth system and method

Preparation method for semiconductor structure

Ultrawide bandgap semiconductor devices including magnesium germani...

Devices having a semiconductor material that is semimetal in bulk a...

Semiconductor device having a shaped epitaxial region with shaping...

Cut metal gate in memory macro edge and middle strap

Semiconductor devices

Nitride-based semiconductor light-emitting element and manufacturin...

Patents Applicationslast 30 patents

LOW-RESISTANCE SOURCE/DRAIN FEATURES

SUPPRESSION OF DOPANT HYDRIDE EVOLUTION FROM EPITAXIAL FILMS IN INT...

SUPPRESSION OF AUTO-DOPING DURING EPITAXIAL GROWTH OF EPITAXY LAYER...

Magnesium Group IV Oxides

GALLIUM NITRIDE DRAIN STRUCTURES AND METHODS OF FORMING THE SAME

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH VERTICAL SIDEWALLS

CONTACT ARCHITECTURE FOR CAPACITANCE REDUCTION AND SATISFACTORY CON...

METHOD, SYSTEM AND APPARATUS FOR FORMING ANISOTROPIC LAYER

SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR...

SUBSTRATE-PROCESSING METHOD AND SUBSTRATE-PROCESSING DEVICE

GALLIUM OXIDE SEMICONDUCTOR DEVICE WITH ENHANCED OHMIC CONTACT PROP...

REDUCING ELECTRICAL ACTIVITY OF DEFECTS IN SILICON CARBIDE GROWN ON...

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING ION IMPLAN...

TRANSISTORS WITH ANTIMONY AND PHOSPHORUS DOPED EPITAXIAL SOURCE/DRA...

REDUCED STRAIN AND STOP LAYER FOR Si/SiGe EPI STACKS

FORMING A PLANAR SEMICONDUCTOR SURFACE

METHOD FOR IMPROVING DOPANT ACTIVATION RATE AND STRUCTURE CREATED B...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE HAVING A SHAPED EPITAXIAL REGION WITH SHAPING...

Devices Having a Semiconductor Material That Is Semimetal in Bulk a...

STRESS-INDUCING SILICON LINER IN SEMICONDUCTOR DEVICES

CUT METAL GATE IN MEMORY MACRO EDGE AND MIDDLE STRAP

PASSIVATED CONTACT BATTERY AND PREPARATION PROCESS THEREFOR

Source/Drain Feature to Contact Interfaces

DOPED SILICON-CONTAINING MATERIALS WITH INCREASED ELECTRICAL, MECHA...

METHOD FOR MANUFACTURING SIC SUBSTRATE

METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EP...

n-TYPE GaN CRYSTAL, GaN WAFER, AND GaN CRYSTAL, GaN WAFER AND NITRI...

METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EP...