Nitrides of boron or aluminum or gallium

Industry

CPC
Y10S148/113

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

Current Industry

Y10S148/113Nitrides of boron or aluminum or gallium

Industries

Patents Grantslast 30 patents

Information Patent Grant
Nitride single crystal and producing method thereof
- Patent number 7,294,199
- Issue date Nov 13, 2007
- Sumitomo Electric Industries, Ltd
- Koji Uematsu
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Crystal manufacturing method
- Patent number 7,256,110
- Issue date Aug 14, 2007
- Nippon Mining & Metals Co., Ltd.
- Shinichi Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device
- Patent number 6,933,181
- Issue date Aug 23, 2005
- Matsushita Electric Industrial Co., Ltd.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for preparing zinc oxide films containing p-type dopant
- Patent number 6,475,825
- Issue date Nov 5, 2002
- The Curators of the University of Missouri
- Henry W. White
- C30 - CRYSTAL GROWTH
Information Patent Grant
Zinc oxide films containing P-type dopant and process for preparing...
- Patent number 6,410,162
- Issue date Jun 25, 2002
- The Curators of the University of Missouri
- Henry W. White
- C30 - CRYSTAL GROWTH
Information Patent Grant
Zinc oxide films containing P-type dopant and process for preparing...
- Patent number 6,291,085
- Issue date Sep 18, 2001
- The Curators of the University of Missouri
- Henry W. White
- C30 - CRYSTAL GROWTH
Information Patent Grant
III-V nitride semiconductor devices and process for the production...
- Patent number 6,255,004
- Issue date Jul 3, 2001
- The Furukawa Electric Co., Ltd.
- Seikoh Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for the preparation and doping of highly insulating monocrys...
- Patent number 6,123,768
- Issue date Sep 26, 2000
- The Trustees of Boston University
- Theodore D. Moustakas
- C30 - CRYSTAL GROWTH
Information Patent Grant
Light emitting device, wafer for light emitting device, and method...
- Patent number 5,962,875
- Issue date Oct 5, 1999
- Sumitomo Electric Industries, Ltd.
- Kensaku Motoki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing single crystal III-V compound semiconductor laye...
- Patent number 5,863,811
- Issue date Jan 26, 1999
- Sony Corporation
- Hiroji Kawai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing group III nitride compound semiconductor subst...
- Patent number 5,846,844
- Issue date Dec 8, 1998
- Toyoda Gosei Co., Ltd.
- Isamu Akasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing a luminous element of group III nitride semi-...
- Patent number 5,834,326
- Issue date Nov 10, 1998
- Pioneer Electronic Corporation
- Mamoru Miyachi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting device, wafer for light emitting device, and method...
- Patent number 5,834,325
- Issue date Nov 10, 1998
- Sumitomo Electric Industries, Ltd.
- Kensaku Motoki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Highly insulating monocrystalline gallium nitride thin films
- Patent number 5,686,738
- Issue date Nov 11, 1997
- Trustees of Boston University
- Theodore D. Moustakas
- C30 - CRYSTAL GROWTH
Information Patent Grant
III-V semiconductor gate structure and method of manufacture
- Patent number 5,619,064
- Issue date Apr 8, 1997
- Motorola, Inc.
- Jaeshin Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for heat-treating a semiconductor body
- Patent number 5,614,447
- Issue date Mar 25, 1997
- New Japan Radio Co., Ltd.
- Shigeki Yamaga
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for etching boron nitride
- Patent number 5,536,360
- Issue date Jul 16, 1996
- International Business Machines Corporation
- Son V. Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a III-V semiconductor gate structure
- Patent number 5,484,740
- Issue date Jan 16, 1996
- Motorola, Inc.
- Jaeshin Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating an insulating gate field effect transistor
- Patent number 5,472,890
- Issue date Dec 5, 1995
- NEC Corporation
- Noriaki Oda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a gallium nitride based semiconductor device...
- Patent number 5,389,571
- Issue date Feb 14, 1995
- Amano; Hiroshi
- Tetsuya Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for the preparation and doping of highly insulating monocrys...
- Patent number 5,385,862
- Issue date Jan 31, 1995
- Trustees of Boston University
- Theodore D. Moustakas
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for fabricating a silicide layer in a semiconductor device
- Patent number 5,384,285
- Issue date Jan 24, 1995
- Motorola, Inc.
- Arkalgud Sitaram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a ternary boron nitride film and a meth...
- Patent number 5,324,690
- Issue date Jun 28, 1994
- Motorola Inc.
- Avgerinos V. Gelatos
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of making a high electron mobility transistor
- Patent number 5,296,395
- Issue date Mar 22, 1994
- APA Optics, Inc.
- Muhammad A. Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing gallium nitride semiconductor light-emittin...
- Patent number 5,272,108
- Issue date Dec 21, 1993
- Kabushiki Kaisha Toyota Chuo Kenkyusho
- Takahiro Kozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep submicron transistor fabrication method
- Patent number 5,270,234
- Issue date Dec 14, 1993
- International Business Machines Corporation
- Daniel L. Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride base semiconductor device
- Patent number 5,239,188
- Issue date Aug 24, 1993
- Amano; Hiroshi
- Tetsuya Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a cubic boron nitride bipolar transistor
- Patent number 5,227,318
- Issue date Jul 13, 1993
- General Motors Corporation
- Gary L. Doll
- C30 - CRYSTAL GROWTH
Information Patent Grant
High efficiency light emitting diodes from bipolar gallium nitride
- Patent number 5,210,051
- Issue date May 11, 1993
- Cree Research, Inc.
- Calvin H. Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of sputtering a mixture of hexagonal boron nitride and stain...
- Patent number 5,192,409
- Issue date Mar 9, 1993
- National Research Institute For Metals
- Masahiro Tosa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
Nitride single crystal and producing method thereof
- Publication number 20050277214
- Publication date Dec 15, 2005
- Sumitomo Electric Industries, Ltd.
- Koji Uematsu
- C30 - CRYSTAL GROWTH
Information Patent Application
Crystal manufacturing method
- Publication number 20050106883
- Publication date May 19, 2005
- Shinichi Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for fabricating semiconductor device
- Publication number 20040137761
- Publication date Jul 15, 2004
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Zinc oxide films containing p-type dopant and process for preparing...
- Publication number 20020031680
- Publication date Mar 14, 2002
- Henry W. White
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Nitrides of boron or aluminum or gallium

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Nitride single crystal and producing method thereof

Crystal manufacturing method

Method for fabricating semiconductor device

Process for preparing zinc oxide films containing p-type dopant

Zinc oxide films containing P-type dopant and process for preparing...

Zinc oxide films containing P-type dopant and process for preparing...

III-V nitride semiconductor devices and process for the production...

Method for the preparation and doping of highly insulating monocrys...

Light emitting device, wafer for light emitting device, and method...

Method for growing single crystal III-V compound semiconductor laye...

Method for producing group III nitride compound semiconductor subst...

Process for producing a luminous element of group III nitride semi-...

Light emitting device, wafer for light emitting device, and method...

Highly insulating monocrystalline gallium nitride thin films

III-V semiconductor gate structure and method of manufacture

Method for heat-treating a semiconductor body

Method for etching boron nitride

Method of manufacturing a III-V semiconductor gate structure

Method for fabricating an insulating gate field effect transistor

Method of fabricating a gallium nitride based semiconductor device...

Method for the preparation and doping of highly insulating monocrys...

Process for fabricating a silicide layer in a semiconductor device

Semiconductor device having a ternary boron nitride film and a meth...

Method of making a high electron mobility transistor

Method of manufacturing gallium nitride semiconductor light-emittin...

Deep submicron transistor fabrication method

Gallium nitride base semiconductor device

Method of making a cubic boron nitride bipolar transistor

High efficiency light emitting diodes from bipolar gallium nitride

Method of sputtering a mixture of hexagonal boron nitride and stain...

Patents Applicationslast 30 patents

Nitride single crystal and producing method thereof

Crystal manufacturing method

Method for fabricating semiconductor device

Zinc oxide films containing p-type dopant and process for preparing...