Nitrides

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H01L21/02389

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/02389Nitrides

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Bonded substrate composed of support substrate and group-13 element...
- Patent number 12,359,341
- Issue date Jul 15, 2025
- NGK Insulators, Ltd.
- Shuhei Higashihara
- C30 - CRYSTAL GROWTH
Information Patent Grant
n-Type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitri...
- Patent number 12,351,943
- Issue date Jul 8, 2025
- Mitsubishi Chemical Corporation
- Kenji Iso
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for producing a layer of aluminum nitride (ALN) on a structu...
- Patent number 12,338,545
- Issue date Jun 24, 2025
- COMMISSARIAT L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Maxime Legallais
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Manufacturing method of semiconductor device
- Patent number 12,334,339
- Issue date Jun 17, 2025
- Denso Corporation
- Shosuke Nakabayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing device for SiC semiconductor substrate
- Patent number 12,325,930
- Issue date Jun 10, 2025
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Aluminum nitride substrate manufacturing method, aluminum nitride s...
- Patent number 12,325,936
- Issue date Jun 10, 2025
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Low voltage laser diodes on {20-21} gallium and nitrogen containing...
- Patent number 12,327,984
- Issue date Jun 10, 2025
- KYOCERA SLD Laser, Inc.
- James W. Raring
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of using sic container
- Patent number 12,320,030
- Issue date Jun 3, 2025
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor chip and method for manufacturing the same
- Patent number 12,293,945
- Issue date May 6, 2025
- Denso Corporation
- Shinichi Hoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having insulator subs...
- Patent number 12,294,006
- Issue date May 6, 2025
- Intel Corporation
- Chung-Hsun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing nitride semiconductor device and nitride s...
- Patent number 12,294,019
- Issue date May 6, 2025
- Fuji Electric Co., Ltd.
- Ryo Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN substrate wafer and method for manufacturing same
- Patent number 12,288,686
- Issue date Apr 29, 2025
- Mitsubishi Chemical Corporation
- Kenji Iso
- C30 - CRYSTAL GROWTH
Information Patent Grant
Advanced electronic device structures using semiconductor structure...
- Patent number 12,272,764
- Issue date Apr 8, 2025
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for fabricating fiducials using selective area gr...
- Patent number 12,272,654
- Issue date Apr 8, 2025
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire array, optoelectronic device and preparation method thereof
- Patent number 12,255,231
- Issue date Mar 18, 2025
- South China Normal University
- Richard Notzel
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for stripping gallium nitride substrate
- Patent number 12,243,746
- Issue date Mar 4, 2025
- SUZHOU METABRAIN INTELLIGENT TECHNOLOGY CO., LTD.
- Fen Guo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing nitride semiconductor device and nitride s...
- Patent number 12,237,379
- Issue date Feb 25, 2025
- Fuji Electric Co., Ltd.
- Ryo Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride substrate with oxygen gradient, method of making,...
- Patent number 12,224,172
- Issue date Feb 11, 2025
- SLT TECHNOLOGIES, INC.
- Mark P. D'Evelyn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preparation method for semiconductor structure
- Patent number 12,183,576
- Issue date Dec 31, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Peng Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystal growth method and a substrate for a semiconductor device
- Patent number 12,170,200
- Issue date Dec 17, 2024
- Kyocera Corporation
- Takehiro Nishimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,157,956
- Issue date Dec 3, 2024
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Fin-based field effect transistors
- Patent number 12,154,903
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Matthias Passlack
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of obtaining a smooth surface with epitaxial lateral overgrowth
- Patent number 12,146,237
- Issue date Nov 19, 2024
- The Regents of the University of California
- Takeshi Kamikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Integrated method for low-cost wide band gap semiconductor device m...
- Patent number 12,125,697
- Issue date Oct 22, 2024
- ThinSiC Inc.
- Tirunelveli Subramaniam Ravi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride single crystal substrate and method for productio...
- Patent number 12,116,697
- Issue date Oct 15, 2024
- Tokuyama Corporation
- Toru Nagashima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,116,695
- Issue date Oct 15, 2024
- United States of America as represented by Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
- Patent number 12,107,129
- Issue date Oct 1, 2024
- Mitsubishi Chemical Corporation
- Satoru Nagao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride crystal substrate and method for manufacturing the same
- Patent number 12,104,279
- Issue date Oct 1, 2024
- Sumitomo Chemical Company, Limited
- Fumimasa Horikiri
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Steep sloped vertical tunnel field-effect transistor
- Patent number 12,107,126
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Peter Ramvall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor structure, nitride semiconductor device, and...
- Patent number 12,100,936
- Issue date Sep 24, 2024
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Toshiyuki Takizawa
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20250239449
- Publication date Jul 24, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kun-Yen Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE STACK AND NITRIDE STACK
- Publication number 20250236988
- Publication date Jul 24, 2025
- Sumitomo Chemical Company, Limited
- Shota KANEKI
- C30 - CRYSTAL GROWTH
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING INSULATOR SUBS...
- Publication number 20250234646
- Publication date Jul 17, 2025
- Intel Corporation
- Chung-Hsun LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20250227974
- Publication date Jul 10, 2025
- ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Hyung Seok LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ADVANCED ELECTRONIC DEVICE STRUCTURES USING SEMICONDUCTOR STRUCTURE...
- Publication number 20250204091
- Publication date Jun 19, 2025
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Method For Low-Cost Wide Band Gap Semiconductor Device M...
- Publication number 20250183026
- Publication date Jun 5, 2025
- ThinSiC Inc.
- Tirunelveli Subramaniam Ravi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE SUBSTRATE, AND SUBSTRATE FOR EPITAXIALLY GROWING GROUP 13...
- Publication number 20250146179
- Publication date May 8, 2025
- NGK Insulators, Ltd.
- Yoshitaka KURAOKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEED CRYSTAL SUBSTRATE AND GRAPHITE SUSCEPTOR WITH SEED CRYSTAL SUB...
- Publication number 20250118551
- Publication date Apr 10, 2025
- KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
- Daisuke NAKAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250107189
- Publication date Mar 27, 2025
- Hon Young Semiconductor Corporation
- Jian-Yi WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CERAMIC SUBSTRATE, LIGHT SOURCE DEVICE, METHOD OF MANUFACTURING CER...
- Publication number 20250079245
- Publication date Mar 6, 2025
- Nichia Corporation.
- Norifumi SASAOKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE
- Publication number 20250062120
- Publication date Feb 20, 2025
- Kyocera Corporation
- Takehiro NISHIMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SAME
- Publication number 20250063786
- Publication date Feb 20, 2025
- Shin-Etsu Handotai Co., Ltd.
- Ippei KUBONO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRODUCTION METHOD FOR NITRIDE CRYSTAL SUBSTRATE, AND PEELED INTERME...
- Publication number 20250054754
- Publication date Feb 13, 2025
- Sumitomo Chemical Company, Limited
- Masafumi YOKOYAMA
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE
- Publication number 20250054766
- Publication date Feb 13, 2025
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED PLASMA CLEAN AND DIELECTRIC PASSIVATION DEPOSITION PROCE...
- Publication number 20250029835
- Publication date Jan 23, 2025
- Applied Materials, Inc.
- Ryan Ley
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Integrated Method For Low-Cost Wide Band Gap Semiconductor Device M...
- Publication number 20250014887
- Publication date Jan 9, 2025
- ThinSiC Inc.
- Tirunelveli Subramaniam Ravi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin-Based Field Effect Transistors
- Publication number 20240395818
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthias PASSLACK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240379352
- Publication date Nov 14, 2024
- Shin-Etsu Handotai Co., Ltd.
- Kazunori HAGIMOTO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...
- Publication number 20240371929
- Publication date Nov 7, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Hao CUI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREFOR
- Publication number 20240355620
- Publication date Oct 24, 2024
- Shin-Etsu Handotai Co., Ltd.
- Ippei KUBONO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CERAMIC SUBSTRATE STRUCTURES AND METHODS OF FORMING THE SAME
- Publication number 20240339320
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Ming CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR STRIPPING GALLIUM NITRIDE SUBSTRATE
- Publication number 20240332021
- Publication date Oct 3, 2024
- SUZHOU METABRAIN INTELLIGENT TECHNOLOGY CO., LTD.
- Fen GUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE SUBSTRATE, SEMICONDUCTOR STRUCTURE, AND MANFUFACTURING ME...
- Publication number 20240304675
- Publication date Sep 12, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20240297246
- Publication date Sep 5, 2024
- Fujitsu Limited
- Shirou OZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
n-TYPE GaN CRYSTAL, GaN WAFER, AND GaN CRYSTAL, GaN WAFER AND NITRI...
- Publication number 20240279844
- Publication date Aug 22, 2024
- MITSUBISHI CHEMICAL CORPORATION
- Kenji ISO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD AND SYSTEM FOR FABRICATING FIDUCIALS USING SELECTIVE AREA GR...
- Publication number 20240274545
- Publication date Aug 15, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIAMOND DEVICE OR STRUCTURE AND METHOD FOR PRODUCING A DIAMOND DEVI...
- Publication number 20240249939
- Publication date Jul 25, 2024
- ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL)
- Reza SOLEIMAN ZADEH ARDEBILI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR PRODUCING A GROWTH SUBSTRATE AND GROWTH SUBSTRATE
- Publication number 20240234134
- Publication date Jul 11, 2024
- ams-OSRAM International GmbH
- Viola Miran Kueller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROWTH SUBSTRATE AND METHOD FOR MANUFACTURING AN OPTOELECTRONIC SEM...
- Publication number 20240234136
- Publication date Jul 11, 2024
- ams-OSRAM International GmbH
- Jelena Ristic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BONDED SUBSTRATE COMPOSED OF SUPPORT SUBSTRATE AND GROUP-13 ELEMENT...
- Publication number 20240191394
- Publication date Jun 13, 2024
- NGK Insulators, Ltd.
- Shuhei HIGASHIHARA
- C30 - CRYSTAL GROWTH

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Bonded substrate composed of support substrate and group-13 element...

n-Type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitri...

Method for producing a layer of aluminum nitride (ALN) on a structu...

Manufacturing method of semiconductor device

Manufacturing device for SiC semiconductor substrate

Aluminum nitride substrate manufacturing method, aluminum nitride s...

Low voltage laser diodes on {20-21} gallium and nitrogen containing...

Method of using sic container

Semiconductor chip and method for manufacturing the same

Gate-all-around integrated circuit structures having insulator subs...

Method for manufacturing nitride semiconductor device and nitride s...

GaN substrate wafer and method for manufacturing same

Advanced electronic device structures using semiconductor structure...

Method and system for fabricating fiducials using selective area gr...

Nanowire array, optoelectronic device and preparation method thereof

Method for stripping gallium nitride substrate

Method for manufacturing nitride semiconductor device and nitride s...

Group III nitride substrate with oxygen gradient, method of making,...

Preparation method for semiconductor structure

Crystal growth method and a substrate for a semiconductor device

Optimized heteroepitaxial growth of semiconductors

Fin-based field effect transistors

Method of obtaining a smooth surface with epitaxial lateral overgrowth

Integrated method for low-cost wide band gap semiconductor device m...

Group III nitride single crystal substrate and method for productio...

Optimized heteroepitaxial growth of semiconductors

Self-standing GaN substrate, GaN crystal, method for producing GaN...

Nitride crystal substrate and method for manufacturing the same

Steep sloped vertical tunnel field-effect transistor

Nitride semiconductor structure, nitride semiconductor device, and...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE STRUCTURE AND MANUFACTURING METHOD THEREOF

METHOD FOR MANUFACTURING NITRIDE STACK AND NITRIDE STACK

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING INSULATOR SUBS...

NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

ADVANCED ELECTRONIC DEVICE STRUCTURES USING SEMICONDUCTOR STRUCTURE...

Integrated Method For Low-Cost Wide Band Gap Semiconductor Device M...

COMPOSITE SUBSTRATE, AND SUBSTRATE FOR EPITAXIALLY GROWING GROUP 13...

SEED CRYSTAL SUBSTRATE AND GRAPHITE SUSCEPTOR WITH SEED CRYSTAL SUB...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

CERAMIC SUBSTRATE, LIGHT SOURCE DEVICE, METHOD OF MANUFACTURING CER...

SEMICONDUCTOR SUBSTRATE

NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SAME

PRODUCTION METHOD FOR NITRIDE CRYSTAL SUBSTRATE, AND PEELED INTERME...

METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE

INTEGRATED PLASMA CLEAN AND DIELECTRIC PASSIVATION DEPOSITION PROCE...

Integrated Method For Low-Cost Wide Band Gap Semiconductor Device M...

Fin-Based Field Effect Transistors

NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME

METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...

NITRIDE SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREFOR

CERAMIC SUBSTRATE STRUCTURES AND METHODS OF FORMING THE SAME

METHOD FOR STRIPPING GALLIUM NITRIDE SUBSTRATE

COMPOSITE SUBSTRATE, SEMICONDUCTOR STRUCTURE, AND MANFUFACTURING ME...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

n-TYPE GaN CRYSTAL, GaN WAFER, AND GaN CRYSTAL, GaN WAFER AND NITRI...

METHOD AND SYSTEM FOR FABRICATING FIDUCIALS USING SELECTIVE AREA GR...

DIAMOND DEVICE OR STRUCTURE AND METHOD FOR PRODUCING A DIAMOND DEVI...

METHOD FOR PRODUCING A GROWTH SUBSTRATE AND GROWTH SUBSTRATE

GROWTH SUBSTRATE AND METHOD FOR MANUFACTURING AN OPTOELECTRONIC SEM...

BONDED SUBSTRATE COMPOSED OF SUPPORT SUBSTRATE AND GROUP-13 ELEMENT...