Nitrides

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CPC
H01L21/02389

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/02389Nitrides

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Crystal growth method and a substrate for a semiconductor device
- Patent number 12,170,200
- Issue date Dec 17, 2024
- Kyocera Corporation
- Takehiro Nishimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,157,956
- Issue date Dec 3, 2024
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Fin-based field effect transistors
- Patent number 12,154,903
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Matthias Passlack
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of obtaining a smooth surface with epitaxial lateral overgrowth
- Patent number 12,146,237
- Issue date Nov 19, 2024
- The Regents of the University of California
- Takeshi Kamikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Integrated method for low-cost wide band gap semiconductor device m...
- Patent number 12,125,697
- Issue date Oct 22, 2024
- ThinSiC Inc.
- Tirunelveli Subramaniam Ravi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride single crystal substrate and method for productio...
- Patent number 12,116,697
- Issue date Oct 15, 2024
- Tokuyama Corporation
- Toru Nagashima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,116,695
- Issue date Oct 15, 2024
- United States of America as represented by Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride crystal substrate and method for manufacturing the same
- Patent number 12,104,279
- Issue date Oct 1, 2024
- Sumitomo Chemical Company, Limited
- Fumimasa Horikiri
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
- Patent number 12,107,129
- Issue date Oct 1, 2024
- Mitsubishi Chemical Corporation
- Satoru Nagao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Steep sloped vertical tunnel field-effect transistor
- Patent number 12,107,126
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Peter Ramvall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor structure, nitride semiconductor device, and...
- Patent number 12,100,936
- Issue date Sep 24, 2024
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Toshiyuki Takizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming nitride semiconductor film
- Patent number 12,094,710
- Issue date Sep 17, 2024
- Tokyo Electron Limited
- Nobuaki Takahashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for dividing a bar of one or more devices
- Patent number 12,087,577
- Issue date Sep 10, 2024
- The Regents of the University of California
- Takeshi Kamikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating super-junction based vertical gallium nitride...
- Patent number 12,080,757
- Issue date Sep 3, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Hao Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride crystal, optical device, semiconductor device, and method f...
- Patent number 12,074,203
- Issue date Aug 27, 2024
- Kabushiki Kaisha Toshiba
- Toshiki Hikosaka
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing semiconductor element, semiconductor elemen...
- Patent number 12,065,760
- Issue date Aug 20, 2024
- Kyocera Corporation
- Masahiro Araki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium-nitride-based module with enhanced electrical performance a...
- Patent number 12,062,701
- Issue date Aug 13, 2024
- Qorvo US, Inc.
- Julio C. Costa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium-nitride-based module with enhanced electrical performance a...
- Patent number 12,062,700
- Issue date Aug 13, 2024
- Qorvo US, Inc.
- Julio C. Costa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride-based semiconductor packaged structure and method for m...
- Patent number 12,040,259
- Issue date Jul 16, 2024
- INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD.
- Shangqing Qiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium-nitride-based module with enhanced electrical performance a...
- Patent number 12,027,593
- Issue date Jul 2, 2024
- Qorvo US, Inc.
- Julio C. Costa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including graphene and method of manufacturing...
- Patent number 12,027,589
- Issue date Jul 2, 2024
- Samsung Electronics Co., Ltd.
- Keunwook Shin
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method for manufacturing nitride-based high electron mobility trans...
- Patent number 12,002,880
- Issue date Jun 4, 2024
- Sumitomo Chemical Company, Limited
- Fumimasa Horikiri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium-nitride-based module with enhanced electrical performance a...
- Patent number 11,996,450
- Issue date May 28, 2024
- Qorvo US, Inc.
- Julio C. Costa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
N-CO-doped semiconductor substrate
- Patent number 11,990,335
- Issue date May 21, 2024
- IVWorks Co., Ltd.
- Bernard Beaumont
- C30 - CRYSTAL GROWTH
Information Patent Grant
N-type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitri...
- Patent number 11,987,903
- Issue date May 21, 2024
- Mitsubishi Chemical Corporation
- Kenji Iso
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Nitride semiconductor substrate, laminate, substrate selection prog...
- Patent number 11,967,617
- Issue date Apr 23, 2024
- Sumitomo Chemical Company, Limited
- Fumimasa Horikiri
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for manufacturing a semiconductor substrate and device by bo...
- Patent number 11,961,765
- Issue date Apr 16, 2024
- Mitsubishi Electric Corporation
- Shuichi Hiza
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor apparatuses and methods involving diamond and GaN-bas...
- Patent number 11,961,837
- Issue date Apr 16, 2024
- The Board of Trustees of the Leland Stanford Junior University
- Srabanti Chowdhury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laminate of aluminum nitride single-crystal substrate
- Patent number 11,952,677
- Issue date Apr 9, 2024
- Tokuyama Corporation
- Masao Ariyuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for manufacturable large area gallium and nitrogen containin...
- Patent number 11,949,212
- Issue date Apr 2, 2024
- KYOCERA SLD Laser, Inc.
- Melvin McLaurin
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
Fin-Based Field Effect Transistors
- Publication number 20240395818
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthias PASSLACK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240379352
- Publication date Nov 14, 2024
- Shin-Etsu Handotai Co., Ltd.
- Kazunori HAGIMOTO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...
- Publication number 20240371929
- Publication date Nov 7, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Hao CUI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREFOR
- Publication number 20240355620
- Publication date Oct 24, 2024
- Shin-Etsu Handotai Co., Ltd.
- Ippei KUBONO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CERAMIC SUBSTRATE STRUCTURES AND METHODS OF FORMING THE SAME
- Publication number 20240339320
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Ming CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR STRIPPING GALLIUM NITRIDE SUBSTRATE
- Publication number 20240332021
- Publication date Oct 3, 2024
- SUZHOU METABRAIN INTELLIGENT TECHNOLOGY CO., LTD.
- Fen GUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE SUBSTRATE, SEMICONDUCTOR STRUCTURE, AND MANFUFACTURING ME...
- Publication number 20240304675
- Publication date Sep 12, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20240297246
- Publication date Sep 5, 2024
- Fujitsu Limited
- Shirou OZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
n-TYPE GaN CRYSTAL, GaN WAFER, AND GaN CRYSTAL, GaN WAFER AND NITRI...
- Publication number 20240279844
- Publication date Aug 22, 2024
- MITSUBISHI CHEMICAL CORPORATION
- Kenji ISO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD AND SYSTEM FOR FABRICATING FIDUCIALS USING SELECTIVE AREA GR...
- Publication number 20240274545
- Publication date Aug 15, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIAMOND DEVICE OR STRUCTURE AND METHOD FOR PRODUCING A DIAMOND DEVI...
- Publication number 20240249939
- Publication date Jul 25, 2024
- ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL)
- Reza SOLEIMAN ZADEH ARDEBILI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR PRODUCING A GROWTH SUBSTRATE AND GROWTH SUBSTRATE
- Publication number 20240234134
- Publication date Jul 11, 2024
- ams-OSRAM International GmbH
- Viola Miran Kueller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROWTH SUBSTRATE AND METHOD FOR MANUFACTURING AN OPTOELECTRONIC SEM...
- Publication number 20240234136
- Publication date Jul 11, 2024
- ams-OSRAM International GmbH
- Jelena Ristic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BONDED SUBSTRATE COMPOSED OF SUPPORT SUBSTRATE AND GROUP-13 ELEMENT...
- Publication number 20240191394
- Publication date Jun 13, 2024
- NGK Insulators, Ltd.
- Shuhei HIGASHIHARA
- C30 - CRYSTAL GROWTH
Information Patent Application
LAYER-BY-LAYER VAN DER WAALS EPITAXIAL GROWTH OF WAFER-SCALE MOS2 C...
- Publication number 20240167195
- Publication date May 23, 2024
- INSTITUTE OF PHYSICS, CHINESE ACADEMY OF SCIENCES
- Qinqin WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE CONTINUOUS GRADED BACK BARRIER GROUP III-NITRIDE HIGH ELECTR...
- Publication number 20240162341
- Publication date May 16, 2024
- Raytheon Company
- Maher Bishara Tahhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHODS FOR GROWTH OF SILICON CARBIDE OVER A LAYER COMP...
- Publication number 20240153763
- Publication date May 9, 2024
- Massachusetts Institute of Technology
- Rachael L. Myers-Ward
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROWTH SUBSTRATE AND METHOD FOR MANUFACTURING AN OPTOELECTRONIC SEM...
- Publication number 20240136176
- Publication date Apr 25, 2024
- ams-OSRAM International GmbH
- Jelena Ristic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING THE SAME
- Publication number 20240117525
- Publication date Apr 11, 2024
- Shin-Etsu Handotai Co., Ltd.
- Keitaro TSUCHIYA
- C30 - CRYSTAL GROWTH
Information Patent Application
CONDUCTIVE C-PLANE GaN SUBSTRATE
- Publication number 20240105449
- Publication date Mar 28, 2024
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
Integrated Method For Low-Cost Wide Band Gap Semiconductor Device M...
- Publication number 20240063013
- Publication date Feb 22, 2024
- ThinSiC Inc.
- Tirunelveli Subramaniam Ravi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SELF-SUPPORTING GALLIUM NITRIDE SUBSTRATE
- Publication number 20240063016
- Publication date Feb 22, 2024
- SINO NITRIDE SEMICONDUCTOR CO., LTD.
- Junjie REN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF USING SIC CONTAINER
- Publication number 20240044042
- Publication date Feb 8, 2024
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Application
FIELD EFFECT TRANSISTOR DEVICE
- Publication number 20240006523
- Publication date Jan 4, 2024
- Huawei Technologies Co., Ltd
- Samir Mouhoubi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE SINGLE CRYSTAL SUBSTRATE
- Publication number 20230407521
- Publication date Dec 21, 2023
- Tokuyama Corporation
- Masayuki FUKUDA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
AlN SINGLE CRYSTAL SUBSTRATE
- Publication number 20230392290
- Publication date Dec 7, 2023
- NGK Insulators, Ltd.
- Hiroharu KOBAYASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
GALLIUM NITRIDE CRYSTAL, GALLIUM NITRIDE SUBSTRATE, AND METHOD FOR...
- Publication number 20230392280
- Publication date Dec 7, 2023
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP-III ELEMENT NITRIDE SEMICONDUCTOR SUBSTRATE
- Publication number 20230395373
- Publication date Dec 7, 2023
- NGK Insulators, Ltd.
- Masahiro SAKAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL STRUCTURE HAVING INTEGRATED MICROCHANNELS
- Publication number 20230369045
- Publication date Nov 16, 2023
- Palo Alto Research Center Incorporated
- Thomas Wunderer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP-III ELEMENT NITRIDE SEMICONDUCTOR SUBSTRATE
- Publication number 20230352298
- Publication date Nov 2, 2023
- NGK Insulators, Ltd.
- Katsuhiro IMAI
- H01 - BASIC ELECTRIC ELEMENTS

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Crystal growth method and a substrate for a semiconductor device

Optimized heteroepitaxial growth of semiconductors

Fin-based field effect transistors

Method of obtaining a smooth surface with epitaxial lateral overgrowth

Integrated method for low-cost wide band gap semiconductor device m...

Group III nitride single crystal substrate and method for productio...

Optimized heteroepitaxial growth of semiconductors

Nitride crystal substrate and method for manufacturing the same

Self-standing GaN substrate, GaN crystal, method for producing GaN...

Steep sloped vertical tunnel field-effect transistor

Nitride semiconductor structure, nitride semiconductor device, and...

Method of forming nitride semiconductor film

Method for dividing a bar of one or more devices

Method of fabricating super-junction based vertical gallium nitride...

Nitride crystal, optical device, semiconductor device, and method f...

Method of manufacturing semiconductor element, semiconductor elemen...

Gallium-nitride-based module with enhanced electrical performance a...

Gallium-nitride-based module with enhanced electrical performance a...

III-nitride-based semiconductor packaged structure and method for m...

Gallium-nitride-based module with enhanced electrical performance a...

Semiconductor device including graphene and method of manufacturing...

Method for manufacturing nitride-based high electron mobility trans...

Gallium-nitride-based module with enhanced electrical performance a...

N-CO-doped semiconductor substrate

N-type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitri...

Nitride semiconductor substrate, laminate, substrate selection prog...

Method for manufacturing a semiconductor substrate and device by bo...

Semiconductor apparatuses and methods involving diamond and GaN-bas...

Laminate of aluminum nitride single-crystal substrate

Method for manufacturable large area gallium and nitrogen containin...

Patents Applicationslast 30 patents

Fin-Based Field Effect Transistors

NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME

METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...

NITRIDE SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREFOR

CERAMIC SUBSTRATE STRUCTURES AND METHODS OF FORMING THE SAME

METHOD FOR STRIPPING GALLIUM NITRIDE SUBSTRATE

COMPOSITE SUBSTRATE, SEMICONDUCTOR STRUCTURE, AND MANFUFACTURING ME...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

n-TYPE GaN CRYSTAL, GaN WAFER, AND GaN CRYSTAL, GaN WAFER AND NITRI...

METHOD AND SYSTEM FOR FABRICATING FIDUCIALS USING SELECTIVE AREA GR...

DIAMOND DEVICE OR STRUCTURE AND METHOD FOR PRODUCING A DIAMOND DEVI...

METHOD FOR PRODUCING A GROWTH SUBSTRATE AND GROWTH SUBSTRATE

GROWTH SUBSTRATE AND METHOD FOR MANUFACTURING AN OPTOELECTRONIC SEM...

BONDED SUBSTRATE COMPOSED OF SUPPORT SUBSTRATE AND GROUP-13 ELEMENT...

LAYER-BY-LAYER VAN DER WAALS EPITAXIAL GROWTH OF WAFER-SCALE MOS2 C...

DOUBLE CONTINUOUS GRADED BACK BARRIER GROUP III-NITRIDE HIGH ELECTR...

SYSTEMS AND METHODS FOR GROWTH OF SILICON CARBIDE OVER A LAYER COMP...

GROWTH SUBSTRATE AND METHOD FOR MANUFACTURING AN OPTOELECTRONIC SEM...

NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING THE SAME

CONDUCTIVE C-PLANE GaN SUBSTRATE

Integrated Method For Low-Cost Wide Band Gap Semiconductor Device M...

METHOD FOR MANUFACTURING SELF-SUPPORTING GALLIUM NITRIDE SUBSTRATE

METHOD OF USING SIC CONTAINER

FIELD EFFECT TRANSISTOR DEVICE

GROUP III NITRIDE SINGLE CRYSTAL SUBSTRATE

AlN SINGLE CRYSTAL SUBSTRATE

GALLIUM NITRIDE CRYSTAL, GALLIUM NITRIDE SUBSTRATE, AND METHOD FOR...

GROUP-III ELEMENT NITRIDE SEMICONDUCTOR SUBSTRATE

EPITAXIAL STRUCTURE HAVING INTEGRATED MICROCHANNELS

GROUP-III ELEMENT NITRIDE SEMICONDUCTOR SUBSTRATE