Nitrides

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H01L21/0254

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/0254Nitrides

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Incorporating semiconductors on a polycrystalline diamond substrate
- Patent number 12,176,221
- Issue date Dec 24, 2024
- Texas State University
- Raju Ahmed
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Nitride semiconductor, semiconductor device, and method for manufac...
- Patent number 12,170,318
- Issue date Dec 17, 2024
- Kabushiki Kaisha Toshiba
- Toshiki Hikosaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystal growth method and a substrate for a semiconductor device
- Patent number 12,170,200
- Issue date Dec 17, 2024
- Kyocera Corporation
- Takehiro Nishimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ground substrate and method for producing same
- Patent number 12,163,249
- Issue date Dec 10, 2024
- NGK Insulators, Ltd.
- Morimichi Watanabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,157,956
- Issue date Dec 3, 2024
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
III-nitride-based semiconductor devices on patterned substrates and...
- Patent number 12,154,864
- Issue date Nov 26, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Liang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-based field effect transistors
- Patent number 12,154,903
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Matthias Passlack
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor device and method for manufacturing the...
- Patent number 12,154,980
- Issue date Nov 26, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Yi-Lun Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN/two-dimensional AlN heterojunction rectifier on silicon substra...
- Patent number 12,154,990
- Issue date Nov 26, 2024
- South China University of Technology
- Wenliang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of obtaining a smooth surface with epitaxial lateral overgrowth
- Patent number 12,146,237
- Issue date Nov 19, 2024
- The Regents of the University of California
- Takeshi Kamikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 12,148,713
- Issue date Nov 19, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Yi-Lun Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double-channel HEMT device and manufacturing method thereof
- Patent number 12,148,823
- Issue date Nov 19, 2024
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-polar III-nitride binary and ternary materials, method for obta...
- Patent number 12,148,612
- Issue date Nov 19, 2024
- Mengyao Xie
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor structures and manufacturing methods thereof
- Patent number 12,148,613
- Issue date Nov 19, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor and manufacturing method of the same
- Patent number 12,142,672
- Issue date Nov 12, 2024
- Nippon Telegraph and Telephone Corporation
- Takuya Hoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor, semiconductor device, and method for manufac...
- Patent number 12,142,646
- Issue date Nov 12, 2024
- Kabushiki Kaisha Toshiba
- Toshiki Hikosaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterostructure including alternating sets of channel and barrier l...
- Patent number 12,136,668
- Issue date Nov 5, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor template, method for manufacturing nitride se...
- Patent number 12,129,572
- Issue date Oct 29, 2024
- Sumitomo Chemical Company, Limited
- Hajime Fujikura
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing nitride semiconductor light-emitting element
- Patent number 12,132,145
- Issue date Oct 29, 2024
- Nichia Corporation
- Tomoya Yamashita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride semiconductor component and process for its production
- Patent number 12,125,938
- Issue date Oct 22, 2024
- Azur Space Solar Power GmbH
- Armin Dadgar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride (III-N) devices with reduced contact resistance a...
- Patent number 12,125,888
- Issue date Oct 22, 2024
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light-emitting element and method of producing the same
- Patent number 12,125,702
- Issue date Oct 22, 2024
- Dowa Electronics Materials Co., Ltd.
- Osamu Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method of forming the same
- Patent number 12,125,782
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Chih-Kuang Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor light-emitting element and manufacturin...
- Patent number 12,119,618
- Issue date Oct 15, 2024
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Shuichi Nakazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride single crystal substrate and method for productio...
- Patent number 12,116,697
- Issue date Oct 15, 2024
- Tokuyama Corporation
- Toru Nagashima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,116,695
- Issue date Oct 15, 2024
- United States of America as represented by Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for forming film and processing apparatus
- Patent number 12,112,943
- Issue date Oct 8, 2024
- Tokyo Electron Limited
- Keita Kumagai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Preparation method of GaN field effect transistor based on diamond...
- Patent number 12,112,944
- Issue date Oct 8, 2024
- THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
- Yuangang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate
- Patent number 12,112,985
- Issue date Oct 8, 2024
- GlobalWafers Co., Ltd.
- Chih-Yuan Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
- Patent number 12,107,129
- Issue date Oct 1, 2024
- Mitsubishi Chemical Corporation
- Satoru Nagao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FABRICATION OF N-FACE III-NITRIDES BY REMOTE EPITAXY
- Publication number 20240420955
- Publication date Dec 19, 2024
- Future Semiconductor Business, Inc
- Kyusang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEED SUBSTRATE FOR EPITAXIAL GROWTH AND METHOD FOR PRODUCING SAME,...
- Publication number 20240417882
- Publication date Dec 19, 2024
- Shin-Etsu Chemical Co., Ltd.
- Yoshihiro KUBOTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT EMITTING DIODE CONTAINING PINHOLE MASKING LAYER AND METHOD OF...
- Publication number 20240421246
- Publication date Dec 19, 2024
- Samsung Electronics Co., Ltd.
- Saket CHADDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRIC FIELD MANAGEMENT IN SEMICONDUCTOR DEVICES
- Publication number 20240420957
- Publication date Dec 19, 2024
- Analog Devices, Inc.
- James G. Fiorenza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME
- Publication number 20240421219
- Publication date Dec 19, 2024
- UNITED MICROELECTRONICS CORP.
- Kai-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR WAFER, AND NITRIDE S...
- Publication number 20240404826
- Publication date Dec 5, 2024
- Shin-Etsu Handotai Co., Ltd.
- Kazunori HAGIMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAMINATE AND METHOD FOR MANUFACTURING SAME
- Publication number 20240401184
- Publication date Dec 5, 2024
- TOSOH CORPORATION
- Yuya SUEMOTO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE
- Publication number 20240395545
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Min-Sung Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A SEMICONDUCTOR WAFER COMPRISING SILICON AND C...
- Publication number 20240395546
- Publication date Nov 28, 2024
- AZUR SPACE SOLAR POWER GMBH
- Atsushi NISHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin-Based Field Effect Transistors
- Publication number 20240395818
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthias PASSLACK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND MANUF...
- Publication number 20240387642
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Piao Chuu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SAME
- Publication number 20240387170
- Publication date Nov 21, 2024
- Shin-Etsu Handotai Co., Ltd.
- Ippei KUBONO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE COMPRISING MONOCRYSTALLINE LAYERS OF ALN MATERIAL ON A SU...
- Publication number 20240384432
- Publication date Nov 21, 2024
- SOITEC
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Application
SCALABLE METHOD FOR SECURITY BARRIERS
- Publication number 20240379582
- Publication date Nov 14, 2024
- Raytheon Company
- Christopher J. Bett
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240379352
- Publication date Nov 14, 2024
- Shin-Etsu Handotai Co., Ltd.
- Kazunori HAGIMOTO
- C30 - CRYSTAL GROWTH
Information Patent Application
Ohmic Contact for Semiconductor Structures
- Publication number 20240379360
- Publication date Nov 14, 2024
- Shiva RAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20240371746
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- CHIH-KUANG KAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...
- Publication number 20240371929
- Publication date Nov 7, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Hao CUI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE
- Publication number 20240371628
- Publication date Nov 7, 2024
- Shin-Etsu Handotai Co., Ltd.
- Kazunori HAGIMOTO
- C30 - CRYSTAL GROWTH
Information Patent Application
Epitaxies of a Chemical Compound Semiconductor
- Publication number 20240363344
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- HUNG-WEI YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BANDGAP MATERIAL IN DRIFT WELL OF SEMICONDUCTOR DEVICE
- Publication number 20240363691
- Publication date Oct 31, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Ebenezer Eshun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED GAN-BASED HEMT DEVICE, DEVICE EPITAXY, AND PREPARATION MET...
- Publication number 20240363694
- Publication date Oct 31, 2024
- Genettice(Qingdao)Semiconductor Materials Co., Ltd.
- Wang MA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A TRANSISTOR, AN ELECTRICAL DEVICE, AND A METHOD FOR PRODUCING A TR...
- Publication number 20240363693
- Publication date Oct 31, 2024
- Epinovatech AB
- Martin Andreas Olsson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND STRUCTURES FOR REDUCING DEFORMATIONS OF GALLIUM NITRIDE...
- Publication number 20240363342
- Publication date Oct 31, 2024
- ROBERT BOSCH GmbH
- BO CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE GROWTH SUBSTRATE MATERIAL
- Publication number 20240363341
- Publication date Oct 31, 2024
- ROBERT BOSCH GmbH
- Mordechai KORNBLUTH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MATERIAL WAFERS OPTIMIZED FOR LINEAR AMPLIFIERS
- Publication number 20240355619
- Publication date Oct 24, 2024
- MACOM Technology Solutions Holdings, Inc.
- Kevin James LINTHICUM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240347603
- Publication date Oct 17, 2024
- ROHM CO., LTD.
- Norikazu ITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CERAMIC SUBSTRATE STRUCTURES AND METHODS OF FORMING THE SAME
- Publication number 20240339320
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Ming CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REINFORCED THIN-FILM DEVICE
- Publication number 20240332423
- Publication date Oct 3, 2024
- Epinovatech AB
- Martin Andreas Olsson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHOD FOR STRIPPING GALLIUM NITRIDE SUBSTRATE
- Publication number 20240332021
- Publication date Oct 3, 2024
- SUZHOU METABRAIN INTELLIGENT TECHNOLOGY CO., LTD.
- Fen GUO
- H01 - BASIC ELECTRIC ELEMENTS

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Incorporating semiconductors on a polycrystalline diamond substrate

Nitride semiconductor, semiconductor device, and method for manufac...

Crystal growth method and a substrate for a semiconductor device

Ground substrate and method for producing same

Optimized heteroepitaxial growth of semiconductors

III-nitride-based semiconductor devices on patterned substrates and...

Fin-based field effect transistors

Nitride-based semiconductor device and method for manufacturing the...

GaN/two-dimensional AlN heterojunction rectifier on silicon substra...

Method of obtaining a smooth surface with epitaxial lateral overgrowth

Semiconductor device and method for manufacturing the same

Double-channel HEMT device and manufacturing method thereof

Non-polar III-nitride binary and ternary materials, method for obta...

Semiconductor structures and manufacturing methods thereof

Heterojunction bipolar transistor and manufacturing method of the same

Nitride semiconductor, semiconductor device, and method for manufac...

Heterostructure including alternating sets of channel and barrier l...

Nitride semiconductor template, method for manufacturing nitride se...

Method of manufacturing nitride semiconductor light-emitting element

Nitride semiconductor component and process for its production

Group III-nitride (III-N) devices with reduced contact resistance a...

Semiconductor light-emitting element and method of producing the same

Semiconductor structure and method of forming the same

Nitride-based semiconductor light-emitting element and manufacturin...

Group III nitride single crystal substrate and method for productio...

Optimized heteroepitaxial growth of semiconductors

Method for forming film and processing apparatus

Preparation method of GaN field effect transistor based on diamond...

Semiconductor substrate

Self-standing GaN substrate, GaN crystal, method for producing GaN...

Patents Applicationslast 30 patents

FABRICATION OF N-FACE III-NITRIDES BY REMOTE EPITAXY

SEED SUBSTRATE FOR EPITAXIAL GROWTH AND METHOD FOR PRODUCING SAME,...

LIGHT EMITTING DIODE CONTAINING PINHOLE MASKING LAYER AND METHOD OF...

ELECTRIC FIELD MANAGEMENT IN SEMICONDUCTOR DEVICES

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME

METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR WAFER, AND NITRIDE S...

LAMINATE AND METHOD FOR MANUFACTURING SAME

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE

METHOD FOR PRODUCING A SEMICONDUCTOR WAFER COMPRISING SILICON AND C...

Fin-Based Field Effect Transistors

TRANSISTOR, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND MANUF...

NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SAME

STRUCTURE COMPRISING MONOCRYSTALLINE LAYERS OF ALN MATERIAL ON A SU...

SCALABLE METHOD FOR SECURITY BARRIERS

NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME

Ohmic Contact for Semiconductor Structures

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME

METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...

METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE

Epitaxies of a Chemical Compound Semiconductor

WIDE BANDGAP MATERIAL IN DRIFT WELL OF SEMICONDUCTOR DEVICE

ENHANCED GAN-BASED HEMT DEVICE, DEVICE EPITAXY, AND PREPARATION MET...

A TRANSISTOR, AN ELECTRICAL DEVICE, AND A METHOD FOR PRODUCING A TR...

METHODS AND STRUCTURES FOR REDUCING DEFORMATIONS OF GALLIUM NITRIDE...

GALLIUM NITRIDE GROWTH SUBSTRATE MATERIAL

SEMICONDUCTOR MATERIAL WAFERS OPTIMIZED FOR LINEAR AMPLIFIERS

NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

CERAMIC SUBSTRATE STRUCTURES AND METHODS OF FORMING THE SAME

REINFORCED THIN-FILM DEVICE

METHOD FOR STRIPPING GALLIUM NITRIDE SUBSTRATE