Nitrides

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H01L21/0254

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/0254Nitrides

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Structures for providing electrical isolation in semiconductor devices
- Patent number 12,368,139
- Issue date Jul 22, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Chan-Hong Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, reservoir computing system, and method for ma...
- Patent number 12,363,968
- Issue date Jul 15, 2025
- Fujitsu Limited
- Kenichi Kawaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Near-infrared light emitting semiconductor element and method for m...
- Patent number 12,364,058
- Issue date Jul 15, 2025
- The Ritsumeikan Trust
- Shuhei Ichikawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Nitride semiconductor component and process for its production
- Patent number 12,364,059
- Issue date Jul 15, 2025
- ALLOS SEMICONDUCTORS GMBH
- Armin Dadgar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bonded substrate composed of support substrate and group-13 element...
- Patent number 12,359,341
- Issue date Jul 15, 2025
- NGK Insulators, Ltd.
- Shuhei Higashihara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Ground substrate and method for producing same
- Patent number 12,351,941
- Issue date Jul 8, 2025
- NGK Insulators, Ltd.
- Morimichi Watanabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
n-Type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitri...
- Patent number 12,351,943
- Issue date Jul 8, 2025
- Mitsubishi Chemical Corporation
- Kenji Iso
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Gallium nitride particles and method for producing same
- Patent number 12,351,455
- Issue date Jul 8, 2025
- Tosoh Corporation
- Masami Mesuda
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
High electron mobility transistor with doped semiconductor region i...
- Patent number 12,356,653
- Issue date Jul 8, 2025
- Infineon Technologies Austria AG
- Thomas Detzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N heteroepitaxial devices on rock salt substrates
- Patent number 12,344,958
- Issue date Jul 1, 2025
- Alliance for Sustainable Energy, LLC
- Marshall Brooks Tellekamp
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device that comprises an HEMT and an HHMT with a back...
- Patent number 12,349,387
- Issue date Jul 1, 2025
- GUANGDONG ZHINENG TECHNOLOGY CO., LTD.
- Zilan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOCVD method for growing INALGAN/GAN heterostructure
- Patent number 12,347,678
- Issue date Jul 1, 2025
- NATIONAL YANG MING CHIAO TUNG UNIVERSITY
- Edward Yi Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate
- Patent number 12,342,589
- Issue date Jun 24, 2025
- Advanced Diamond Holdings, LLC
- John P. Ciraldo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a layer of aluminum nitride (ALN) on a structu...
- Patent number 12,338,545
- Issue date Jun 24, 2025
- COMMISSARIAT L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Maxime Legallais
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Apparatuses including band offset materials, and related memory dev...
- Patent number 12,342,544
- Issue date Jun 24, 2025
- Albert Fayrushin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrates for III-nitride epitaxy
- Patent number 12,331,426
- Issue date Jun 17, 2025
- X-FAB SEMICONDUCTOR FOUNDRIES GMBH
- Victor Sizov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium nitride (GaN) integrated circuit technology
- Patent number 12,336,268
- Issue date Jun 17, 2025
- Intel Corporation
- Nicole K. Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial wafer, semiconductor device, and method for manufacturing...
- Patent number 12,334,340
- Issue date Jun 17, 2025
- Mitsubishi Electric Corporation
- Atsushi Era
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single crystal semiconductor structure and method of fabricating th...
- Patent number 12,336,247
- Issue date Jun 17, 2025
- Samsung Electronics Co., Ltd.
- Junhee Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a layer of textured aluminum nitride
- Patent number 12,329,032
- Issue date Jun 10, 2025
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Stéphane Cadot
- C30 - CRYSTAL GROWTH
Information Patent Grant
Low voltage laser diodes on {20-21} gallium and nitrogen containing...
- Patent number 12,327,984
- Issue date Jun 10, 2025
- KYOCERA SLD Laser, Inc.
- James W. Raring
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Polycrystalline ceramic substrate
- Patent number 12,315,721
- Issue date May 27, 2025
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 12,317,532
- Issue date May 27, 2025
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Yi-Lun Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing thereof
- Patent number 12,315,740
- Issue date May 27, 2025
- Denso Corporation
- Kenta Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial growth using carbon buffer on substrate
- Patent number 12,308,227
- Issue date May 20, 2025
- Massachusetts Institute of Technology
- Jeehwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor (HEMT) having an indium-containin...
- Patent number 12,308,230
- Issue date May 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Po-Chun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conformal and smooth titanium nitride layers and methods of forming...
- Patent number 12,308,226
- Issue date May 20, 2025
- Eugenus, Inc.
- Sung-Hoon Jung
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Epitaxial formation support structures and associated methods
- Patent number 12,300,765
- Issue date May 13, 2025
- Micron Technology, Inc.
- Calvin Wade Sheen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride (GaN) selective epitaxial windows for integrated ci...
- Patent number 12,302,618
- Issue date May 13, 2025
- Intel Corporation
- Samuel James Bader
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor chip and method for manufacturing the same
- Patent number 12,293,945
- Issue date May 6, 2025
- Denso Corporation
- Shinichi Hoshi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR MAKING SEMICONDUCTOR DEVICES INCLUDING COMPOUND SEMICOND...
- Publication number 20250241018
- Publication date Jul 24, 2025
- ATOMERA INCORPORATED
- JERRY WAYNE JOHNSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING SEMICONDUCTOR DEVICES INCLUDING COMPOUND SEMICOND...
- Publication number 20250239447
- Publication date Jul 24, 2025
- ATOMERA INCORPORATED
- JERRY WAYNE JOHNSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING SEMICONDUCTOR DEVICES WITH GROUP III-N AND SILICO...
- Publication number 20250239448
- Publication date Jul 24, 2025
- ATOMERA INCORPORATED
- JERRY WAYNE JOHNSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LASER DIODES, LEDS, AND SILICON INTEGRATED SENSORS ON PATTERNED SUB...
- Publication number 20250241089
- Publication date Jul 24, 2025
- Jie Piao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE STACK AND NITRIDE STACK
- Publication number 20250236988
- Publication date Jul 24, 2025
- Sumitomo Chemical Company, Limited
- Shota KANEKI
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS AND METHOD FOR FILM FORMATION
- Publication number 20250232958
- Publication date Jul 17, 2025
- Gallium Enterprises Pty Ltd
- Satyanarayan Barik
- C01 - INORGANIC CHEMISTRY
Information Patent Application
SUBSTRATE STRIPPING METHOD AND EPITAXIAL WAFER
- Publication number 20250226209
- Publication date Jul 10, 2025
- HC SEMITEK (ZHEJIANG) CO., LTD.
- Hongpo HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20250227974
- Publication date Jul 10, 2025
- ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Hyung Seok LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR WAFER HAVING GAN INTERMEDIATE LAYERS FOR FORMING SEMI...
- Publication number 20250226215
- Publication date Jul 10, 2025
- ALLOS Semiconductor GmbH
- Atsushi NISHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-N SEMICONDUCTOR DEVICE WITH SUBSTRATE CONTACT
- Publication number 20250220998
- Publication date Jul 3, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Takayuki Enda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAMINATED STRUCTURE, METHOD FOR MANUFACTURING LAMINATED STRUCTURE,...
- Publication number 20250220999
- Publication date Jul 3, 2025
- Japan Display Inc.
- Hayata AOKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENGINEERED SUBSTRATE WITH A MULTI-BARRIER LAYER STRUCTURE
- Publication number 20250210348
- Publication date Jun 26, 2025
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE LEAKAGE CURRENT SUPPRESSION BY SOURCE SURROUNDING GATE STRUC...
- Publication number 20250212484
- Publication date Jun 26, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Aurelien Gauthier Brun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR PLANARIZATION OF ENGINEERED SUBSTRATES
- Publication number 20250212476
- Publication date Jun 26, 2025
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH MULTIPLE DEVICE REGIONS AND METHOD OF FAB...
- Publication number 20250203987
- Publication date Jun 19, 2025
- NXP USA, Inc.
- Jianwei Wan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-V COMPOUND SEMICONDUCTOR SINGLE CRYSTAL SUBSTRATE AND MAN...
- Publication number 20250201555
- Publication date Jun 19, 2025
- Sumitomo Electric Industries, Ltd.
- Masataka SATANO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF INSPECTING GROUP-III ELEMENT NITRIDE SUBSTRATE, METHOD OF...
- Publication number 20250201636
- Publication date Jun 19, 2025
- NGK Insulators, Ltd.
- Yoshitaka KURAOKA
- C30 - CRYSTAL GROWTH
Information Patent Application
ADVANCED ELECTRONIC DEVICE STRUCTURES USING SEMICONDUCTOR STRUCTURE...
- Publication number 20250204091
- Publication date Jun 19, 2025
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYER STRUCTURE, METHOD FOR PRODUCING MULTILAYER STRUCTURE AND...
- Publication number 20250201554
- Publication date Jun 19, 2025
- Japan Display Inc.
- Hayata AOKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR, INCLUDING MULTI-PORTION NITRIDE REGION
- Publication number 20250203983
- Publication date Jun 19, 2025
- Kabushiki Kaisha Toshiba
- Toshiki HIKOSAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYERED STRUCTURE, SEMICONDUCTOR DEVICE, AND MANUFACTURING MET...
- Publication number 20250191914
- Publication date Jun 12, 2025
- Japan Display Inc.
- Hayata AOKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20250191913
- Publication date Jun 12, 2025
- Japan Display Inc.
- Hayata AOKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Devices with compositionally graded alloy layers
- Publication number 20250194189
- Publication date Jun 12, 2025
- Cornell University
- Shivali Agrawal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC STRUCTURE, SEMICONDUCTOR DEVICE STRUCTURE AND MANUFACTUR...
- Publication number 20250194192
- Publication date Jun 12, 2025
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYERED STRUCTURE, MANUFACTURING METHOD THEREOF, AND SEMICONDU...
- Publication number 20250194195
- Publication date Jun 12, 2025
- Japan Display Inc.
- Hayata AOKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BORON NITRIDE FILM FORMING METHOD AND FILM FORMING APPARATUS
- Publication number 20250188604
- Publication date Jun 12, 2025
- TOKYO ELECTRON LIMITED
- Kazuki GOTO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR MANUFACTURING A SUBSTRATE WAFER FOR BUILDING GROUP III-V...
- Publication number 20250167005
- Publication date May 22, 2025
- Siltronic AG
- Brian MURPHY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method for Fabricating a Semiconductor Wafer
- Publication number 20250159917
- Publication date May 15, 2025
- INFINEON TECHNOLOGIES AG
- Helmut Brech
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND MANUF...
- Publication number 20250159956
- Publication date May 15, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Piao Chuu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS AND CIRCUITS WITH DUAL THRESHOLD VOLTAGE TRANSISTORS AND...
- Publication number 20250159982
- Publication date May 15, 2025
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Chan-Hong CHERN
- H01 - BASIC ELECTRIC ELEMENTS

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Structures for providing electrical isolation in semiconductor devices

Semiconductor device, reservoir computing system, and method for ma...

Near-infrared light emitting semiconductor element and method for m...

Nitride semiconductor component and process for its production

Bonded substrate composed of support substrate and group-13 element...

Ground substrate and method for producing same

n-Type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitri...

Gallium nitride particles and method for producing same

High electron mobility transistor with doped semiconductor region i...

III-N heteroepitaxial devices on rock salt substrates

Semiconductor device that comprises an HEMT and an HHMT with a back...

MOCVD method for growing INALGAN/GAN heterostructure

Semiconductor substrate

Method for producing a layer of aluminum nitride (ALN) on a structu...

Apparatuses including band offset materials, and related memory dev...

Substrates for III-nitride epitaxy

Gallium nitride (GaN) integrated circuit technology

Epitaxial wafer, semiconductor device, and method for manufacturing...

Single crystal semiconductor structure and method of fabricating th...

Method for manufacturing a layer of textured aluminum nitride

Low voltage laser diodes on {20-21} gallium and nitrogen containing...

Polycrystalline ceramic substrate

Semiconductor device and method for manufacturing the same

Semiconductor device and method for manufacturing thereof

Epitaxial growth using carbon buffer on substrate

High electron mobility transistor (HEMT) having an indium-containin...

Conformal and smooth titanium nitride layers and methods of forming...

Epitaxial formation support structures and associated methods

Gallium nitride (GaN) selective epitaxial windows for integrated ci...

Semiconductor chip and method for manufacturing the same

Patents Applicationslast 30 patents

METHOD FOR MAKING SEMICONDUCTOR DEVICES INCLUDING COMPOUND SEMICOND...

METHOD FOR MAKING SEMICONDUCTOR DEVICES INCLUDING COMPOUND SEMICOND...

METHOD FOR MAKING SEMICONDUCTOR DEVICES WITH GROUP III-N AND SILICO...

LASER DIODES, LEDS, AND SILICON INTEGRATED SENSORS ON PATTERNED SUB...

METHOD FOR MANUFACTURING NITRIDE STACK AND NITRIDE STACK

APPARATUS AND METHOD FOR FILM FORMATION

SUBSTRATE STRIPPING METHOD AND EPITAXIAL WAFER

NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR WAFER HAVING GAN INTERMEDIATE LAYERS FOR FORMING SEMI...

III-N SEMICONDUCTOR DEVICE WITH SUBSTRATE CONTACT

LAMINATED STRUCTURE, METHOD FOR MANUFACTURING LAMINATED STRUCTURE,...

ENGINEERED SUBSTRATE WITH A MULTI-BARRIER LAYER STRUCTURE

SOURCE LEAKAGE CURRENT SUPPRESSION BY SOURCE SURROUNDING GATE STRUC...

METHOD AND SYSTEM FOR PLANARIZATION OF ENGINEERED SUBSTRATES

SEMICONDUCTOR DEVICE WITH MULTIPLE DEVICE REGIONS AND METHOD OF FAB...

GROUP III-V COMPOUND SEMICONDUCTOR SINGLE CRYSTAL SUBSTRATE AND MAN...

METHOD OF INSPECTING GROUP-III ELEMENT NITRIDE SUBSTRATE, METHOD OF...

ADVANCED ELECTRONIC DEVICE STRUCTURES USING SEMICONDUCTOR STRUCTURE...

MULTILAYER STRUCTURE, METHOD FOR PRODUCING MULTILAYER STRUCTURE AND...

NITRIDE SEMICONDUCTOR, INCLUDING MULTI-PORTION NITRIDE REGION

MULTILAYERED STRUCTURE, SEMICONDUCTOR DEVICE, AND MANUFACTURING MET...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Devices with compositionally graded alloy layers

DIELECTRIC STRUCTURE, SEMICONDUCTOR DEVICE STRUCTURE AND MANUFACTUR...

MULTILAYERED STRUCTURE, MANUFACTURING METHOD THEREOF, AND SEMICONDU...

BORON NITRIDE FILM FORMING METHOD AND FILM FORMING APPARATUS

METHOD FOR MANUFACTURING A SUBSTRATE WAFER FOR BUILDING GROUP III-V...

Semiconductor Device and Method for Fabricating a Semiconductor Wafer

TRANSISTOR, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND MANUF...

APPARATUS AND CIRCUITS WITH DUAL THRESHOLD VOLTAGE TRANSISTORS AND...