of AIII BV compounds

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H01L21/31679

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/31679of AIII BV compounds

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor light emitting device and method for manufacturing same
- Patent number 9,276,379
- Issue date Mar 1, 2016
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Tomoya Satoh
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of forming a gate insulator in group III-V nitride semicondu...
- Patent number 7,977,254
- Issue date Jul 12, 2011
- Tekcore Co., Ltd.
- Lung-Han Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a gate insulator in group III-V nitride semicondu...
- Patent number 7,253,061
- Issue date Aug 7, 2007
- Tekcore Co., Ltd.
- Lung-Han Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus with improved layers of group III-nitride semiconductor
- Patent number 7,038,300
- Issue date May 2, 2006
- Lucent Technologies Inc.
- Julia Wang-Ping Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Layers of group III-nitride semiconductor made by processes with mu...
- Patent number 7,001,813
- Issue date Feb 21, 2006
- Lucent Technologies Inc.
- Michael James Manfra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing layers of group III-nitride semiconductor having...
- Patent number 6,699,760
- Issue date Mar 2, 2004
- Lucent Technologies, Inc.
- Julia Wan-Ping Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a passivation film of InP compound semiconductor
- Patent number 5,147,827
- Issue date Sep 15, 1992
- Matsushita Electric Industrial Co., Ltd.
- Toyoji Chino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photo-anodic oxide surface passivation for semiconductors
- Patent number 5,086,328
- Issue date Feb 4, 1992
- Santa Barbara Research Center
- Ichiro Kasai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
InSb device manufacturing by anodic oxidation
- Patent number 4,863,880
- Issue date Sep 5, 1989
- Agency of Industrial Science & Technology, Ministry of International Trade &...
- Hiroyuki Fujisada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective anodic oxidation of semiconductors for pattern generation
- Patent number 4,569,728
- Issue date Feb 11, 1986
- The United States of America as represented by the Secretary of the Air Force
- Bijan Davari
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Grant
Anodizable metallic contacts to mercury cadmium telleride
- Patent number 4,524,378
- Issue date Jun 18, 1985
- Hughes Aircraft Company
- Charles A. Cockrum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial thinning process
- Patent number 4,462,871
- Issue date Jul 31, 1984
- The United States of America as represented by the administrator of the Natio...
- Clifford M. Siegel
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Grant
Electrochemical method for producing a passivated junction in alloy...
- Patent number 4,454,008
- Issue date Jun 12, 1984
- The United States of America as represented by the Secretary of the Army
- Juergen L. W. Pohlmann
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Grant
Surface passivation of compound semiconductors
- Patent number 4,297,176
- Issue date Oct 27, 1981
- National Research Development Corporation
- Stephen J. Hannah
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for growing a superficial dielectric structure upon a subst...
- Patent number 4,268,535
- Issue date May 19, 1981
- Thomson-CSF
- Michel Croset
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Grant
Method of making semiconductor device
- Patent number 4,247,373
- Issue date Jan 27, 1981
- Matsushita Electric Industrial Co., Ltd.
- Akio Shimano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide masking of gallium arsenide
- Patent number 4,226,667
- Issue date Oct 7, 1980
- Bell Telephone Laboratories, Incorporated
- Ralph A. Logan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrolytic etch preparation of semiconductor surfaces
- Patent number 4,194,954
- Issue date Mar 25, 1980
- The Post Office
- Marc M. Faktor
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Grant
Method of manufacturing a field effect transistor
- Patent number 4,157,610
- Issue date Jun 12, 1979
- Tokyo Shibaura Electric Co., Ltd.
- Kiyoo Kamei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of providing thinned layer of epitaxial semiconductor materi...
- Patent number 4,154,663
- Issue date May 15, 1979
- Texas Instruments Incorporated
- Robert L. Adams
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Grant
Method of manufacturing a semiconductor device and semiconductor de...
- Patent number 4,145,262
- Issue date Mar 20, 1979
- U.S. Philips Corporation
- Rudolf P. Tijburg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaAs mosfet
- Patent number 4,119,993
- Issue date Oct 10, 1978
- National Research Development Corporation
- Hans Ludwig Hartnagel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing compound semiconductor devices
- Patent number 4,116,722
- Issue date Sep 26, 1978
- Tokyo Shibaura Electric Co.
- Kiyoo Kamei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of semiconductor device
- Patent number 4,080,721
- Issue date Mar 28, 1978
- International Business Machines Corporation
- Roland Y. Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for preparation of stoichiometric III-V compound semicond...
- Patent number 4,026,741
- Issue date May 31, 1977
- Bell Telephone Laboratories, Incorporated
- Chuan Chung Chang
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Grant
Compound semiconductor optical integrated circuit having isolation...
- Patent number 4,015,893
- Issue date Apr 5, 1977
- Hayashi, President, University of Tokyo; Kentaro
- Takuo Sugano
- G02 - OPTICS
Information Patent Grant
Devices containing aluminum-V semiconductor and method for making
- Patent number 3,982,265
- Issue date Sep 21, 1976
- Bell Telephone Laboratories, Incorporated
- Wilbur Dexter Johnston
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
3898141
- Patent number 3,898,141
- Issue date Aug 5, 1975
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3890215
- Patent number 3,890,215
- Issue date Jun 17, 1975
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3844904
- Patent number 3,844,904
- Issue date Oct 29, 1974
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR

Patents Applicationslast 30 patents

Information Patent Application
Method of forming a gate insulator in group III-V nitride semicondu...
- Publication number 20110124203
- Publication date May 26, 2011
- Lung-Han Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a gate insulator in group III-V nitride semicondu...
- Publication number 20060121700
- Publication date Jun 8, 2006
- Tekcore Co., Ltd.
- Lung-Han Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming an oxide layer using a mixture of a supercritical...
- Publication number 20050130449
- Publication date Jun 16, 2005
- Ping Chuang
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Application
Method and apparatus for electrochemical processing
- Publication number 20050126920
- Publication date Jun 16, 2005
- GE ENERGY (USA) LLC
- Oleg V. Sulima
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
Apparatus with improved layers of group III-nitride semiconductor
- Publication number 20040124427
- Publication date Jul 1, 2004
- Julia Wan-Ping Hsu
- C30 - CRYSTAL GROWTH
Information Patent Application
Layers of group III-nitride semiconductor made by processes with mu...
- Publication number 20030235934
- Publication date Dec 25, 2003
- Michael James Manfra
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR GROWING LAYERS OF GROUP III - NITRIDE SEMICONDUCTOR HAVI...
- Publication number 20030235970
- Publication date Dec 25, 2003
- Julia Wan-Ping Hsu
- C30 - CRYSTAL GROWTH

of AIII BV compounds

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor light emitting device and method for manufacturing same

Method of forming a gate insulator in group III-V nitride semicondu...

Method of forming a gate insulator in group III-V nitride semicondu...

Apparatus with improved layers of group III-nitride semiconductor

Layers of group III-nitride semiconductor made by processes with mu...

Method for growing layers of group III-nitride semiconductor having...

Method for producing a passivation film of InP compound semiconductor

Photo-anodic oxide surface passivation for semiconductors

InSb device manufacturing by anodic oxidation

Selective anodic oxidation of semiconductors for pattern generation

Anodizable metallic contacts to mercury cadmium telleride

Epitaxial thinning process

Electrochemical method for producing a passivated junction in alloy...

Surface passivation of compound semiconductors

Process for growing a superficial dielectric structure upon a subst...

Method of making semiconductor device

Oxide masking of gallium arsenide

Electrolytic etch preparation of semiconductor surfaces

Method of manufacturing a field effect transistor

Method of providing thinned layer of epitaxial semiconductor materi...

Method of manufacturing a semiconductor device and semiconductor de...

GaAs mosfet

Method for manufacturing compound semiconductor devices

Fabrication of semiconductor device

Technique for preparation of stoichiometric III-V compound semicond...

Compound semiconductor optical integrated circuit having isolation...

Devices containing aluminum-V semiconductor and method for making

3898141

3890215

3844904

Patents Applicationslast 30 patents

Method of forming a gate insulator in group III-V nitride semicondu...

Method of forming a gate insulator in group III-V nitride semicondu...

Method of forming an oxide layer using a mixture of a supercritical...

Method and apparatus for electrochemical processing

Apparatus with improved layers of group III-nitride semiconductor

Layers of group III-nitride semiconductor made by processes with mu...

METHOD FOR GROWING LAYERS OF GROUP III - NITRIDE SEMICONDUCTOR HAVI...