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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/31666of AIII BV compounds

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Patents Grantslast 30 patents

Information Patent Grant
Method for oxidizing a substrate surface using oxygen
- Patent number 10,256,290
- Issue date Apr 9, 2019
- Comptek Solutions Oy
- Pekka Laukkanen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for oxidizing a substrate surface using oxygen
- Patent number 9,837,486
- Issue date Dec 5, 2017
- Comptek Solutions Oy
- Pekka Laukkanen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for treating a substrate and a substrate
- Patent number 9,269,763
- Issue date Feb 23, 2016
- Turun Yliopisto
- Pekka Laukkanen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method for producing the same
- Patent number 8,722,497
- Issue date May 13, 2014
- Nissan Motor Co., Ltd.
- Satoshi Tanimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method for producing the same
- Patent number 8,716,087
- Issue date May 6, 2014
- Nissan Motor Co., Ltd.
- Satoshi Tanimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method for producing the same
- Patent number 8,497,218
- Issue date Jul 30, 2013
- Nissan Motor Co., Ltd.
- Satoshi Tanimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method for producing the same
- Patent number 8,222,648
- Issue date Jul 17, 2012
- Nissan Motor Co., Ltd.
- Satoshi Tanimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for oxidizing a layer, and associated holding devices for a...
- Patent number 8,011,319
- Issue date Sep 6, 2011
- Infineon Technologies AG
- Hin-Yiu Chung
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Planar oxidation method for producing a localised buried insulator
- Patent number 7,932,160
- Issue date Apr 26, 2011
- Centre National de la Recherche Scientifique (Cnrs)
- Guilhem Almuneau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithically-pumped erbium-doped waveguide amplifiers and lasers
- Patent number 7,655,489
- Issue date Feb 2, 2010
- The University of Notre Dame du Lac
- Douglas Hall
- C03 - GLASS MINERAL OR SLAG WOOL
Information Patent Grant
Method for oxidizing a layer, and associated holding devices for a...
- Patent number 7,615,499
- Issue date Nov 10, 2009
- Infineon Technologies AG
- Hin-Yiu Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Article comprising an oxide layer on a GaAs-based semiconductor str...
- Patent number 7,276,456
- Issue date Oct 2, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Matthias Passlack
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Steam oxidation method
- Patent number 7,001,851
- Issue date Feb 21, 2006
- Sony Corporation
- Yoshiyuki Tanaka
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing semiconductor light emitting device and oxi...
- Patent number 6,979,581
- Issue date Dec 27, 2005
- Rohm Co., Ltd.
- Hironobu Sai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device
- Patent number 6,933,181
- Issue date Aug 23, 2005
- Matsushita Electric Industrial Co., Ltd.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabrication for III-V semiconductor surface passivation
- Patent number 6,933,244
- Issue date Aug 23, 2005
- Massachusetts Institute of Technology
- William D. Goodhue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Article comprising an oxide layer on a GaAs-based semiconductor str...
- Patent number 6,914,012
- Issue date Jul 5, 2005
- FREESCALE SEMICONDUCTOR, INC.
- Matthias Passlack
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming article comprising an oxide layer on a GaAs-based...
- Patent number 6,756,320
- Issue date Jun 29, 2004
- Freescale Semiconductor, Inc.
- Matthias Passlack
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for the controlled oxidiation of materials
- Patent number 6,555,407
- Issue date Apr 29, 2003
- Zarlink Semiconductor AB
- Nicolae Pantazi Chitica
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of oxidizing strain-compensated superlattice of group III-V...
- Patent number 6,531,414
- Issue date Mar 11, 2003
- The United States of America as represented by the National Security Agency
- Frederick G. Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Increased lateral oxidation rate of aluminum indium arsenide
- Patent number 6,472,695
- Issue date Oct 29, 2002
- The Regents of the University of California
- Eric M. Hall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating metal oxide semiconductor field effect trans...
- Patent number 6,326,317
- Issue date Dec 4, 2001
- National Science Council
- Hwei-Heng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for etching multilayer compound semiconductor material
- Patent number 6,306,674
- Issue date Oct 23, 2001
- Peter S. Zory
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Grant
Method of forming a gate quality oxide-compound semiconductor struc...
- Patent number 6,159,834
- Issue date Dec 12, 2000
- Motorola, Inc.
- Zhiyi (Jimmy) Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective metallization/deposition for semiconductor devices
- Patent number 6,001,722
- Issue date Dec 14, 1999
- Motorola, Inc.
- Kumar Shiralagi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Masking methods during semiconductor device fabrication
- Patent number 5,877,071
- Issue date Mar 2, 1999
- Motorola, Inc.
- Kumar Shiralagi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement-depletion logic based on Ge mosfets
- Patent number 5,798,555
- Issue date Aug 25, 1998
- The Regents of the University of California
- Umesh Kumar Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating buried control elements in semiconductor devices
- Patent number 5,700,703
- Issue date Dec 23, 1997
- Motorola
- Jenn-Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating defect-free compound semiconductor thin film...
- Patent number 5,686,350
- Issue date Nov 11, 1997
- Electronics and Telecommunications Research Institute
- Bun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods
- Patent number 5,581,571
- Issue date Dec 3, 1996
- The Board of Trustees of the University of Illinois
- Nick Holonyak
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME
- Publication number 20130309859
- Publication date Nov 21, 2013
- Rohm Co., Ltd.
- Satoshi TANIMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME
- Publication number 20130309877
- Publication date Nov 21, 2013
- Rohm Co., Ltd.
- Satoshi TANIMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR TREATING A SUBSTRATE AND A SUBSTRATE
- Publication number 20130214331
- Publication date Aug 22, 2013
- TURUN YLIOPISTO
- Pekka Laukkanen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME
- Publication number 20120064731
- Publication date Mar 15, 2012
- ROHM CO., LTD.
- Satoshi TANIMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR OXIDIZING A LAYER, AND ASSOCIATED HOLDING DEVICES FOR A...
- Publication number 20100018462
- Publication date Jan 28, 2010
- Infineon Technologies AG
- Hin-Yiu Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon carbide semiconductor device and method for producing the same
- Publication number 20090050898
- Publication date Feb 26, 2009
- Satoshi Tanimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHICALLY-PUMPED ERBIUM-DOPED WAVEGUIDE AMPLIFIERS AND LASERS
- Publication number 20080285610
- Publication date Nov 20, 2008
- Douglas Hall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Monolithically-Pumped Erbium-Doped Waveguide Amplifiers and Lasers
- Publication number 20080267237
- Publication date Oct 30, 2008
- Douglas Hall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Planar Oxidation Method for Producing a Localised Buried Insulator
- Publication number 20080164560
- Publication date Jul 10, 2008
- CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS
- Guilhem Almuneau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for oxidation of a layer and corresponding holder device for...
- Publication number 20060057858
- Publication date Mar 16, 2006
- Hin-Yiu Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing semiconductor light emitting device and oxi...
- Publication number 20060016397
- Publication date Jan 26, 2006
- ROHM CO., LTD.
- Hironobu Sai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Article comprising an oxide layer on a GaAs-based semiconductor str...
- Publication number 20050221623
- Publication date Oct 6, 2005
- Matthias Passlack
- C30 - CRYSTAL GROWTH
Information Patent Application
Steam oxidation method
- Publication number 20050014387
- Publication date Jan 20, 2005
- Yoshiyuki Tanaka
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Article comprising an oxide layer on a GaAs-based semiconductor str...
- Publication number 20040248427
- Publication date Dec 9, 2004
- Matthias Passlack
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for fabricating semiconductor device
- Publication number 20040137761
- Publication date Jul 15, 2004
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabrication for III-V semiconductor surface passivation
- Publication number 20030219994
- Publication date Nov 27, 2003
- William D. Goodhue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing semiconductor light emitting device and oxi...
- Publication number 20030139060
- Publication date Jul 24, 2003
- Hironobu Sai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Article comprising an oxide layer on a GaAs-based semiconductor str...
- Publication number 20030137018
- Publication date Jul 24, 2003
- Matthias Passlack
- C30 - CRYSTAL GROWTH

of AIII BV compounds

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method for oxidizing a substrate surface using oxygen

Method for oxidizing a substrate surface using oxygen

Method for treating a substrate and a substrate

Silicon carbide semiconductor device and method for producing the same

Silicon carbide semiconductor device and method for producing the same

Silicon carbide semiconductor device and method for producing the same

Silicon carbide semiconductor device and method for producing the same

Method for oxidizing a layer, and associated holding devices for a...

Planar oxidation method for producing a localised buried insulator

Monolithically-pumped erbium-doped waveguide amplifiers and lasers

Method for oxidizing a layer, and associated holding devices for a...

Article comprising an oxide layer on a GaAs-based semiconductor str...

Steam oxidation method

Method of manufacturing semiconductor light emitting device and oxi...

Method for fabricating semiconductor device

Method of fabrication for III-V semiconductor surface passivation

Article comprising an oxide layer on a GaAs-based semiconductor str...

Method of forming article comprising an oxide layer on a GaAs-based...

Method for the controlled oxidiation of materials

Method of oxidizing strain-compensated superlattice of group III-V...

Increased lateral oxidation rate of aluminum indium arsenide

Method for fabricating metal oxide semiconductor field effect trans...

Method for etching multilayer compound semiconductor material

Method of forming a gate quality oxide-compound semiconductor struc...

Selective metallization/deposition for semiconductor devices

Masking methods during semiconductor device fabrication

Enhancement-depletion logic based on Ge mosfets

Method of fabricating buried control elements in semiconductor devices

Method for fabricating defect-free compound semiconductor thin film...

Semiconductor devices and methods

Patents Applicationslast 30 patents

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME

METHOD FOR TREATING A SUBSTRATE AND A SUBSTRATE

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME

METHOD FOR OXIDIZING A LAYER, AND ASSOCIATED HOLDING DEVICES FOR A...

Silicon carbide semiconductor device and method for producing the same

MONOLITHICALLY-PUMPED ERBIUM-DOPED WAVEGUIDE AMPLIFIERS AND LASERS

Monolithically-Pumped Erbium-Doped Waveguide Amplifiers and Lasers

Planar Oxidation Method for Producing a Localised Buried Insulator

Method for oxidation of a layer and corresponding holder device for...

Method of manufacturing semiconductor light emitting device and oxi...

Article comprising an oxide layer on a GaAs-based semiconductor str...

Steam oxidation method

Article comprising an oxide layer on a GaAs-based semiconductor str...

Method for fabricating semiconductor device

Method of fabrication for III-V semiconductor surface passivation

Method of manufacturing semiconductor light emitting device and oxi...

Article comprising an oxide layer on a GaAs-based semiconductor str...