of AIIIBV compounds

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/3006of AIIIBV compounds

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Patents Grantslast 30 patents

Information Patent Grant
Low-leakage regrown GaN p-n junctions for GaN power devices
- Patent number 11,626,483
- Issue date Apr 11, 2023
- Arizona Board of Regents on behalf of Arizona State University
- Yuji Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma-based edge terminations for gallium nitride power devices
- Patent number 11,417,529
- Issue date Aug 16, 2022
- Arizona Board of Regents on behalf of Arizona State University
- Yuji Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor device and semiconductor device
- Patent number 10,256,100
- Issue date Apr 9, 2019
- RENESAS ELECTRONICS CORPORATION
- Tomohiro Hirai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 10,134,908
- Issue date Nov 20, 2018
- RENESAS ELECTRONICS CORPORATION
- Tatsuo Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including GaN-based compound semiconductor sta...
- Patent number 8,981,428
- Issue date Mar 17, 2015
- Sumitomo Electric Industries, Ltd
- Yu Saitoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reducing Fermi-Level-Pinning in a non-silicon channel MO...
- Patent number 8,524,562
- Issue date Sep 3, 2013
- IMEC
- Wei-E Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried lateral index guided lasers and lasers with lateral current...
- Patent number 7,526,007
- Issue date Apr 28, 2009
- Palo Alto Research Center Incorporated
- Christopher L. Chua
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivation of oxide-compound semiconductor interfaces
- Patent number 6,025,281
- Issue date Feb 15, 2000
- Motorola, Inc.
- Matthias Passlack
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement-depletion logic based on gaas mosfets
- Patent number 5,872,031
- Issue date Feb 16, 1999
- The Regents of the University of California
- Umesh Kumar Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Downstream ammonia plasma passivation of GaAs
- Patent number 5,464,664
- Issue date Nov 7, 1995
- AT&T IPM Corp.
- Eray S. Aydil
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method and apparatus for the production of a dissociated atomic par...
- Patent number 5,336,533
- Issue date Aug 9, 1994
- Ruxam, Inc.
- Alexander A. Balmashnov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for the production of a dissociated atomic particle flow
- Patent number 5,282,899
- Issue date Feb 1, 1994
- Ruxam, Inc.
- Alexander A. Balmashnov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hydrogen plasma passivation of GaAs
- Patent number 5,179,029
- Issue date Jan 12, 1993
- AT&T Bell Laboratories
- Richard A. Gottscho
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PLASMA-BASED EDGE TERMINATIONS FOR GALLIUM NITRIDE POWER DEVICES
- Publication number 20210202257
- Publication date Jul 1, 2021
- Yuji Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-LEAKAGE REGROWN GAN P-N JUNCTIONS FOR GAN POWER DEVICES
- Publication number 20210104603
- Publication date Apr 8, 2021
- Yuji Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20170186880
- Publication date Jun 29, 2017
- RENESAS ELECTRONICS CORPORATION
- Tatsuo NAKAYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20140193964
- Publication date Jul 10, 2014
- NATIONAL CHIAO-TUNG UNIVERSITY
- Po-Tsun LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT EMITTING DIODES
- Publication number 20130210180
- Publication date Aug 15, 2013
- SEREN PHOTONICS LIMITED
- Tao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME
- Publication number 20130181226
- Publication date Jul 18, 2013
- Sumitomo Electric Industries, Ltd.
- Yu Saitoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR REDUCING FERMI-LEVEL-PINNING IN A NON-SILICON CHANNEL MO...
- Publication number 20100065824
- Publication date Mar 18, 2010
- IMEC
- Wei-E Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Buried lateral index guided lasers and lasers with lateral current...
- Publication number 20070153853
- Publication date Jul 5, 2007
- Palo Alto Research Center Incorporated
- Christopher L. Chua
- G02 - OPTICS

of AIIIBV compounds

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Low-leakage regrown GaN p-n junctions for GaN power devices

Plasma-based edge terminations for gallium nitride power devices

Manufacturing method of semiconductor device and semiconductor device

Semiconductor device and manufacturing method thereof

Semiconductor device including GaN-based compound semiconductor sta...

Method for reducing Fermi-Level-Pinning in a non-silicon channel MO...

Buried lateral index guided lasers and lasers with lateral current...

Passivation of oxide-compound semiconductor interfaces

Enhancement-depletion logic based on gaas mosfets

Downstream ammonia plasma passivation of GaAs

Method and apparatus for the production of a dissociated atomic par...

Apparatus for the production of a dissociated atomic particle flow

Hydrogen plasma passivation of GaAs

Patents Applicationslast 30 patents

PLASMA-BASED EDGE TERMINATIONS FOR GALLIUM NITRIDE POWER DEVICES

LOW-LEAKAGE REGROWN GAN P-N JUNCTIONS FOR GAN POWER DEVICES

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

LIGHT EMITTING DIODES

SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME

METHOD FOR REDUCING FERMI-LEVEL-PINNING IN A NON-SILICON CHANNEL MO...

Buried lateral index guided lasers and lasers with lateral current...