of electrically inactive species in silicon to make buried insulating layers

Industry

CPC
H01L21/26533

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/26533of electrically inactive species in silicon to make buried insulating layers

Industries

Patents Grantslast 30 patents

Information Patent Grant
Isolation structures in multi-gate semiconductor devices and method...
- Patent number 11,948,998
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor devices and a semiconductor d...
- Patent number 11,908,864
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Hung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming N-type buried layer in a substrate by performin...
- Patent number 11,881,405
- Issue date Jan 23, 2024
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor device
- Patent number 11,869,800
- Issue date Jan 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF substrate structure and method of production
- Patent number 11,848,191
- Issue date Dec 19, 2023
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Emmanuel Augendre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor arrangement and method for manufacturing the same
- Patent number 11,842,931
- Issue date Dec 12, 2023
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,830,909
- Issue date Nov 28, 2023
- Murata Manufacturing Co., Ltd.
- Tomoyuki Ashimine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, semiconductor device manufacturing method, in...
- Patent number 11,824,083
- Issue date Nov 21, 2023
- Kabushiki Kaisha Toshiba
- Tatsuo Shimizu
- B60 - VEHICLES IN GENERAL
Information Patent Grant
Semiconductor arrangements and methods for manufacturing the same
- Patent number 11,810,823
- Issue date Nov 7, 2023
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming an oxide volume within a fin
- Patent number 11,764,104
- Issue date Sep 19, 2023
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk substrates with a self-aligned buried polycrystalline layer
- Patent number 11,749,559
- Issue date Sep 5, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-type field effect transistor and method for fabricating the same
- Patent number 11,664,425
- Issue date May 30, 2023
- United Microelectronics Corp.
- Shi-You Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertically stacked transistors in a fin
- Patent number 11,658,072
- Issue date May 23, 2023
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Display device and method of fabricating the same
- Patent number 11,626,429
- Issue date Apr 11, 2023
- Samsung Display Co., Ltd.
- Sang Sub Kim
- G09 - EDUCATION CRYPTOGRAPHY DISPLAY ADVERTISING SEALS
Information Patent Grant
High voltage semiconductor device including buried oxide layer and...
- Patent number 11,626,515
- Issue date Apr 11, 2023
- United Microelectronics Corp.
- Sheng-Yao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for reducing gate induced drain leakage in DRAM cells
- Patent number 11,610,972
- Issue date Mar 21, 2023
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of preparing an isolation region in a high resistivity silic...
- Patent number 11,587,825
- Issue date Feb 21, 2023
- GlobalWafers Co., Ltd.
- Igor Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk substrates with a self-aligned buried polycrystalline layer
- Patent number 11,527,432
- Issue date Dec 13, 2022
- GLOBALFOUNDRIES U.S. INC.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sacrificial capping layer for passivation using plasma-based implan...
- Patent number 11,501,972
- Issue date Nov 15, 2022
- Applied Materials, Inc.
- Vikram M. Bhosle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structures in multi-gate semiconductor devices and method...
- Patent number 11,444,179
- Issue date Sep 13, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-gate transistor with gate dielectric having a first thicknes...
- Patent number 11,404,551
- Issue date Aug 2, 2022
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Ning Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of preparing an isolation region in a high resistivity silic...
- Patent number 11,380,576
- Issue date Jul 5, 2022
- GlobalWafers Co., Ltd.
- Igor Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried damage layers for electrical isolation
- Patent number 11,322,357
- Issue date May 3, 2022
- GLOBALFOUNDRIES U.S. INC.
- Siva P. Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures including stacked depleted and high resist...
- Patent number 11,315,825
- Issue date Apr 26, 2022
- GLOBALFOUNDRIES U.S. INC.
- Michel J. Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-type field effect transistor having channel region with top porti...
- Patent number 11,271,078
- Issue date Mar 8, 2022
- United Microelectronics Corp.
- Shi-You Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor devices and a semiconductor d...
- Patent number 11,164,746
- Issue date Nov 2, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Hung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-depth regions of high resistivity in a semiconductor substrate
- Patent number 11,158,535
- Issue date Oct 26, 2021
- GLOBALFOUNDRIES U.S. INC.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device with controlled channel stop layer depth
- Patent number 11,101,369
- Issue date Aug 24, 2021
- Semiconductor Manufacturing International (Shanghai) Corporation
- Fei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing etch stop structures and...
- Patent number 11,101,284
- Issue date Aug 24, 2021
- SanDisk Technologies LLC
- Jayavel Pachamuthu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertically stacked transistors in a pin
- Patent number 11,075,119
- Issue date Jul 27, 2021
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NOVEL METHOD OF FORMING WAFER-TO-WAFER BONDING STRUCTURE
- Publication number 20240038719
- Publication date Feb 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Ting LAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING HIGH VOLTAGE TRANSISTOR AND STRUCTURE RESULTING T...
- Publication number 20230387107
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- YUAN-CHENG YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE
- Publication number 20230377942
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING AN OXIDE VOLUME WITHIN A FIN
- Publication number 20230377947
- Publication date Nov 23, 2023
- Intel Corporation
- Cheng-Ying HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR OXIDIZING A SILICON HARDMASK USING ION IMPLANT
- Publication number 20230268188
- Publication date Aug 24, 2023
- Applied Materials, Inc.
- Sungho Jo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION IMPLANTATION TO CONTROL BURIED CHANNEL RECESS DEPTH
- Publication number 20230253208
- Publication date Aug 10, 2023
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE SEMICONDUCTOR DEVICE INCLUDING BURIED OXIDE LAYER
- Publication number 20230207692
- Publication date Jun 29, 2023
- UNITED MICROELECTRONICS CORP.
- Sheng-Yao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH RESISTIVITY SILICON-ON-INSULATOR SUBSTRATE COMPRISING AN ISOLA...
- Publication number 20230163022
- Publication date May 25, 2023
- GLOBALWAFERS CO., LTD.
- Igor Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BULK SUBSTRATES WITH A SELF-ALIGNED BURIED POLYCRYSTALLINE LAYER
- Publication number 20230063731
- Publication date Mar 2, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSTRUCTURE FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING
- Publication number 20230040843
- Publication date Feb 9, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Ming Lung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20230012358
- Publication date Jan 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- JHON JHY LIAW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-TEMPERATURE IMPLANT FOR BURIED LAYER FORMATION
- Publication number 20220415657
- Publication date Dec 29, 2022
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE FOR REDUCING GATE INDUCED DRAIN LEAKAGE IN DRAM CELLS
- Publication number 20220359670
- Publication date Nov 10, 2022
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH-GATE TRANSISTOR WITH GATE DIELECTRIC HAVING A FIRST THICKNES...
- Publication number 20220238675
- Publication date Jul 28, 2022
- Changxin Memory Technologies, Inc.
- Ning LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20220140139
- Publication date May 5, 2022
- UNITED MICROELECTRONICS CORP.
- Sheng-Yao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-TYPE FIELD EFFECT TRANSISTOR AND METHOD FOR FABRICATING THE SAME
- Publication number 20220140080
- Publication date May 5, 2022
- UNITED MICROELECTRONICS CORP.
- Shi-You Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20220059695
- Publication date Feb 24, 2022
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Yukun LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND A SEMICONDUCTOR D...
- Publication number 20220059351
- Publication date Feb 24, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Hung CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Sacrificial Capping Layer For Passivation Using Plasma-Based Implan...
- Publication number 20220028693
- Publication date Jan 27, 2022
- Applied Materials, Inc.
- Vikram M. Bhosle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICALLY STACKED TRANSISTORS IN A FIN
- Publication number 20210351078
- Publication date Nov 11, 2021
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BURIED DAMAGE LAYERS FOR ELECTRICAL ISOLATION
- Publication number 20210272812
- Publication date Sep 2, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Siva P. Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20210151475
- Publication date May 20, 2021
- SAMSUNG DISPLAY CO., LTD.
- Sang Sub KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-DEPTH REGIONS OF HIGH RESISTIVITY IN A SEMICONDUCTOR SUBSTRATE
- Publication number 20210111063
- Publication date Apr 15, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BULK SUBSTRATES WITH A SELF-ALIGNED BURIED POLYCRYSTALLINE LAYER
- Publication number 20210074577
- Publication date Mar 11, 2021
- GLOBALFOUNDRIES INC.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES INCLUDING STACKED DEPLETED AND HIGH RESIST...
- Publication number 20210066118
- Publication date Mar 4, 2021
- GLOBALFOUNDRIES INC.
- Michel J. Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PREPARING AN ISOLATION REGION IN A HIGH RESISTIVITY SILIC...
- Publication number 20210035855
- Publication date Feb 4, 2021
- GLOBALWAFERS CO., LTD.
- Igor Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ARRANGEMENT AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20210020521
- Publication date Jan 21, 2021
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PREPARING AN ISOLATION REGION IN A HIGH RESISTIVITY SILIC...
- Publication number 20210013091
- Publication date Jan 14, 2021
- GLOBALWAFERS CO., LTD.
- Igor Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ARRANGEMENTS AND METHODS FOR MANUFACTURING THE SAME
- Publication number 20210013105
- Publication date Jan 14, 2021
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING AN OXIDE VOLUME WITHIN A FIN
- Publication number 20200411365
- Publication date Dec 31, 2020
- Intel Corporation
- Cheng-Ying HUANG
- H01 - BASIC ELECTRIC ELEMENTS

of electrically inactive species in silicon to make buried insulating layers

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Isolation structures in multi-gate semiconductor devices and method...

Method of manufacturing semiconductor devices and a semiconductor d...

Methods for forming N-type buried layer in a substrate by performin...

Method for fabricating a semiconductor device

RF substrate structure and method of production

Semiconductor arrangement and method for manufacturing the same

Semiconductor device

Semiconductor device, semiconductor device manufacturing method, in...

Semiconductor arrangements and methods for manufacturing the same

Forming an oxide volume within a fin

Bulk substrates with a self-aligned buried polycrystalline layer

P-type field effect transistor and method for fabricating the same

Vertically stacked transistors in a fin

Display device and method of fabricating the same

High voltage semiconductor device including buried oxide layer and...

Technique for reducing gate induced drain leakage in DRAM cells

Method of preparing an isolation region in a high resistivity silic...

Bulk substrates with a self-aligned buried polycrystalline layer

Sacrificial capping layer for passivation using plasma-based implan...

Isolation structures in multi-gate semiconductor devices and method...

Trench-gate transistor with gate dielectric having a first thicknes...

Method of preparing an isolation region in a high resistivity silic...

Buried damage layers for electrical isolation

Semiconductor structures including stacked depleted and high resist...

P-type field effect transistor having channel region with top porti...

Method of manufacturing semiconductor devices and a semiconductor d...

Multi-depth regions of high resistivity in a semiconductor substrate

FinFET device with controlled channel stop layer depth

Three-dimensional memory device containing etch stop structures and...

Vertically stacked transistors in a pin

Patents Applicationslast 30 patents

NOVEL METHOD OF FORMING WAFER-TO-WAFER BONDING STRUCTURE

METHOD OF FORMING HIGH VOLTAGE TRANSISTOR AND STRUCTURE RESULTING T...

METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE

FORMING AN OXIDE VOLUME WITHIN A FIN

METHODS FOR OXIDIZING A SILICON HARDMASK USING ION IMPLANT

ION IMPLANTATION TO CONTROL BURIED CHANNEL RECESS DEPTH

HIGH VOLTAGE SEMICONDUCTOR DEVICE INCLUDING BURIED OXIDE LAYER

HIGH RESISTIVITY SILICON-ON-INSULATOR SUBSTRATE COMPRISING AN ISOLA...

BULK SUBSTRATES WITH A SELF-ALIGNED BURIED POLYCRYSTALLINE LAYER

NANOSTRUCTURE FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

LOW-TEMPERATURE IMPLANT FOR BURIED LAYER FORMATION

TECHNIQUE FOR REDUCING GATE INDUCED DRAIN LEAKAGE IN DRAM CELLS

TRENCH-GATE TRANSISTOR WITH GATE DIELECTRIC HAVING A FIRST THICKNES...

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

P-TYPE FIELD EFFECT TRANSISTOR AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND A SEMICONDUCTOR D...

Sacrificial Capping Layer For Passivation Using Plasma-Based Implan...

VERTICALLY STACKED TRANSISTORS IN A FIN

BURIED DAMAGE LAYERS FOR ELECTRICAL ISOLATION

DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME

MULTI-DEPTH REGIONS OF HIGH RESISTIVITY IN A SEMICONDUCTOR SUBSTRATE

BULK SUBSTRATES WITH A SELF-ALIGNED BURIED POLYCRYSTALLINE LAYER

SEMICONDUCTOR STRUCTURES INCLUDING STACKED DEPLETED AND HIGH RESIST...

METHOD OF PREPARING AN ISOLATION REGION IN A HIGH RESISTIVITY SILIC...

SEMICONDUCTOR ARRANGEMENT AND METHOD FOR MANUFACTURING THE SAME

METHOD OF PREPARING AN ISOLATION REGION IN A HIGH RESISTIVITY SILIC...

SEMICONDUCTOR ARRANGEMENTS AND METHODS FOR MANUFACTURING THE SAME

FORMING AN OXIDE VOLUME WITHIN A FIN