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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L43/00Devices using galvano-magnetic or similar magnetic effects Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof

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H01L43/04of Hall-effect devices

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and manufacturing method of semiconductor device
- Patent number 11,706,999
- Issue date Jul 18, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien-Min Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hall device
- Patent number 11,678,588
- Issue date Jun 13, 2023
- Infineon Technologies AG
- Udo Ausserlechner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic device and magnetic random access memory
- Patent number 11,672,185
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Feng Ying
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and manufacturing method of semiconductor device
- Patent number 11,672,186
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien-Min Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with embedded magnetic flux concentrator
- Patent number 11,668,766
- Issue date Jun 6, 2023
- Melexis Technologies SA
- Appolonius Jacobus Van Der Wiel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin-orbit torque-based switching device and method of fabricating...
- Patent number 11,641,782
- Issue date May 2, 2023
- Korea University Research and Business Foundation
- Young Keun Kim
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Grant
Spin-current magnetization rotational element and spin orbit torque...
- Patent number 11,641,784
- Issue date May 2, 2023
- TDK Corporation
- Tomoyuki Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In-plane spin orbit torque magnetoresistive stack/structure and met...
- Patent number 11,637,235
- Issue date Apr 25, 2023
- EVERSPIN TECHNOLOGIES, INC.
- Sumio Ikegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin-orbit torque magnetoresistance effect element and magnetic memory
- Patent number 11,637,236
- Issue date Apr 25, 2023
- TDK Corporation
- Tomoyuki Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for multilayer structure of magnetic body and...
- Patent number 11,637,234
- Issue date Apr 25, 2023
- Tokyo Institute of Technology
- Nam Hai Pham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin current magnetization rotational element
- Patent number 11,637,237
- Issue date Apr 25, 2023
- TDK Corporation
- Tomoyuki Sasaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive effect element and magnetic memory
- Patent number 11,631,804
- Issue date Apr 18, 2023
- Tohoku University
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Grant
Switching of perpendicularly magnetized nanomagnets with spin-orbit...
- Patent number 11,626,229
- Issue date Apr 11, 2023
- University of Rochester
- Mohammad Kazemi
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin element and magnetic memory
- Patent number 11,624,790
- Issue date Apr 11, 2023
- TDK Corporation
- Atsushi Tsumita
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element including a crystallized co heusle...
- Patent number 11,621,392
- Issue date Apr 4, 2023
- TDK Corporation
- Shinto Ichikawa
- G11 - INFORMATION STORAGE
Information Patent Grant
SOT differential reader and method of making same
- Patent number 11,615,809
- Issue date Mar 28, 2023
- Western Digital Technologies, Inc.
- Quang Le
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-current magnetization rotational element and spin orbit torque...
- Patent number 11,611,036
- Issue date Mar 21, 2023
- TDK Corporation
- Tomoyuki Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive element, magnetic memory device, and writing and r...
- Patent number 11,610,614
- Issue date Mar 21, 2023
- TOHOKU UNIVERSITY
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin current magnetization rotational element
- Patent number 11,611,037
- Issue date Mar 21, 2023
- TDK Corporation
- Tomoyuki Sasaki
- G01 - MEASURING TESTING
Information Patent Grant
Current transducer with integrated primary conductor
- Patent number 11,609,248
- Issue date Mar 21, 2023
- LEM International SA
- Jean-François Lanson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hall effect sensor with low offset and high level of stability
- Patent number 11,605,778
- Issue date Mar 14, 2023
- Lake Shore Cryotronics, Inc.
- David Daughton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Data storage devices including a first top electrode and a differen...
- Patent number 11,600,662
- Issue date Mar 7, 2023
- Samsung Electronics Co., Ltd.
- Junghwan Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory
- Patent number 11,600,768
- Issue date Mar 7, 2023
- TDK Corporation
- Tomoyuki Sasaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Tunnel barrier layer, magnetoresistance effect element, method for...
- Patent number 11,594,674
- Issue date Feb 28, 2023
- TDK Corporation
- Shinto Ichikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switching of perpendicularly magnetized nanomagnets with spin-orbit...
- Patent number 11,594,357
- Issue date Feb 28, 2023
- University of Rochester
- Abdelrahman G. Qoutb
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hall sensor with performance control
- Patent number 11,588,101
- Issue date Feb 21, 2023
- Texas Instruments Incorporated
- Keith Ryan Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insertion layer between spin hall effect or spin orbit torque elect...
- Patent number 11,575,083
- Issue date Feb 7, 2023
- Intel Corporation
- Tanay Gosavi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Leadframes with folded conductor portion and devices therefrom
- Patent number 11,569,153
- Issue date Jan 31, 2023
- Texas Instruments Incorporated
- Enis Tuncer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin orbit memory devices with reduced magnetic moment and methods...
- Patent number 11,557,629
- Issue date Jan 17, 2023
- Intel Corporation
- Kaan Oguz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance effect element, circuit device, and circuit unit
- Patent number 11,557,719
- Issue date Jan 17, 2023
- TOHOKU UNIVERSITY
- Shunsuke Fukami
- G06 - COMPUTING CALCULATING COUNTING

Patents Applicationslast 30 patents

Information Patent Application
MAGNETIC MEMORY STRUCTURE
- Publication number 20240206347
- Publication date Jun 20, 2024
- Industrial Technology Research Institute
- Ziaur Rahaman Shakh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cobalt-Boron (CoB) Layer for Magnetic Recording Devices, Memory Dev...
- Publication number 20240112840
- Publication date Apr 4, 2024
- Western Digital Technologies, Inc.
- Susumu OKAMURA
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Application
MRAM STRUCTURE WITH CHIRAL SPIN-ORBIT-TORQUE METAL ELECTRODE
- Publication number 20240107896
- Publication date Mar 28, 2024
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOT MRAM STRUCTURE AND FABRICATING METHOD OF THE SAME
- Publication number 20240107777
- Publication date Mar 28, 2024
- UNITED MICROELECTRONICS CORP.
- Chih-Wei Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM) DEVICE AND METHOD OF F...
- Publication number 20240032441
- Publication date Jan 25, 2024
- United Microelectronics Corp.
- Chih-Wei Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY AND MANUFACTURING METHOD THEREOF
- Publication number 20240016067
- Publication date Jan 11, 2024
- United Microelectronics Corp.
- Chih-Wei Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240016066
- Publication date Jan 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Sheng Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Highly Textured 001 BiSb And Materials for Making Same
- Publication number 20240006109
- Publication date Jan 4, 2024
- Western Digital Technologies, Inc.
- Quang LE
- G11 - INFORMATION STORAGE
Information Patent Application
Doped BiSb (012) or Undoped BiSb (001) Topological Insulator with G...
- Publication number 20240005973
- Publication date Jan 4, 2024
- Western Digital Technologies, Inc.
- Quang LE
- G11 - INFORMATION STORAGE
Information Patent Application
HALL EFFECT DEVICE WITH TRENCH ABOUT A MICRON OR GREATER IN DEPTH
- Publication number 20230413687
- Publication date Dec 21, 2023
- ALLEGRO MICROSYSTEMS, LLC
- Thomas S. Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VALLEYTRONIC LOGIC DEVICES COMPRISING MONOCHALCOGENIDES
- Publication number 20230413684
- Publication date Dec 21, 2023
- Intel Corporation
- Punyashloka Debashis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL, MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230371400
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kai-Tai Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND SEMICONDUCTOR DIE
- Publication number 20230354719
- Publication date Nov 2, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shy-Jay Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY USING SPIN CURRENT, OPERATING METHOD THEREOF, AND E...
- Publication number 20230352072
- Publication date Nov 2, 2023
- Samsung Electronics Co., Ltd.
- Kwangseok KIM
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230337551
- Publication date Oct 19, 2023
- UNITED MICROELECTRONICS CORP.
- Jia-Rong Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CURRENT SENSOR INTEGRATED CIRCUIT WITH A DUAL GAUGE LEAD FRAME
- Publication number 20230314483
- Publication date Oct 5, 2023
- ALLEGRO MICROSYSTEMS, LLC
- Shixi Louis Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN-ORBIT READOUT USING TRANSITION METAL DICHALCOGENIDES AND PROXI...
- Publication number 20230320230
- Publication date Oct 5, 2023
- Intel Corporation
- Punyashloka Debashis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN-ORBIT-TORQUE BASED MAGNETIC SENSOR AND A MAGNETIC FIELD MEASUR...
- Publication number 20230320233
- Publication date Oct 5, 2023
- Hyundai Motor Company
- Ji-Sung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230320232
- Publication date Oct 5, 2023
- UNITED MICROELECTRONICS CORP.
- Hung-Chan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETO RESISTIVE ELEMENT
- Publication number 20230309415
- Publication date Sep 28, 2023
- TDK Corporation
- Katsuyuki NAKADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED MAGNETORESISTIVE RANDOM ACCESS MEMORY
- Publication number 20230309320
- Publication date Sep 28, 2023
- International Business Machines Corporation
- Heng Wu
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY DEVICE AND METHOD OF OPERATING THE SAME
- Publication number 20230292630
- Publication date Sep 14, 2023
- Samsung Electronics Co., Ltd.
- Siyeon Cho
- G11 - INFORMATION STORAGE
Information Patent Application
INTERCONNECTS WITH SPINTRONIC LOGIC DEVICES
- Publication number 20230284457
- Publication date Sep 7, 2023
- Intel Corporation
- Hai Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Device Including Bottom Electrode Bridges and Method of Manu...
- Publication number 20230263074
- Publication date Aug 17, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- MingYuan Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY STRUCTURE AND FORMATION METHOD THEREOF
- Publication number 20230255122
- Publication date Aug 10, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Jen CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIFERROIC TUNNEL JUNCTION MEMORY DEVICE AND RELATED METHODS
- Publication number 20230240152
- Publication date Jul 27, 2023
- Eagle Technology , LLC
- MATT BAUER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Doping Process To Refine Grain Size For Smoother BiSb Film Surface
- Publication number 20230197132
- Publication date Jun 22, 2023
- Western Digital Technologies, Inc.
- Quang LE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230200258
- Publication date Jun 22, 2023
- UNITED MICROELECTRONICS CORP.
- Hung-Chan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20230189662
- Publication date Jun 15, 2023
- KIOXIA Corporation
- Masatoshi YOSHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYNTHETIC ANTIFERROMAGNET-BASED PROBABILISTIC COMPUTING DEVICES
- Publication number 20230189659
- Publication date Jun 15, 2023
- Intel Corporation
- Punyashloka Debashis
- G06 - COMPUTING CALCULATING COUNTING

of Hall-effect devices

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device and manufacturing method of semiconductor device

Hall device

Magnetic device and magnetic random access memory

Semiconductor device and manufacturing method of semiconductor device

Semiconductor device with embedded magnetic flux concentrator

Spin-orbit torque-based switching device and method of fabricating...

Spin-current magnetization rotational element and spin orbit torque...

In-plane spin orbit torque magnetoresistive stack/structure and met...

Spin-orbit torque magnetoresistance effect element and magnetic memory

Manufacturing method for multilayer structure of magnetic body and...

Spin current magnetization rotational element

Magnetoresistive effect element and magnetic memory

Switching of perpendicularly magnetized nanomagnets with spin-orbit...

Spin element and magnetic memory

Magnetoresistance effect element including a crystallized co heusle...

SOT differential reader and method of making same

Spin-current magnetization rotational element and spin orbit torque...

Magnetoresistive element, magnetic memory device, and writing and r...

Spin current magnetization rotational element

Current transducer with integrated primary conductor

Hall effect sensor with low offset and high level of stability

Data storage devices including a first top electrode and a differen...

Magnetic memory

Tunnel barrier layer, magnetoresistance effect element, method for...

Switching of perpendicularly magnetized nanomagnets with spin-orbit...

Hall sensor with performance control

Insertion layer between spin hall effect or spin orbit torque elect...

Leadframes with folded conductor portion and devices therefrom

Spin orbit memory devices with reduced magnetic moment and methods...

Magnetoresistance effect element, circuit device, and circuit unit

Patents Applicationslast 30 patents

MAGNETIC MEMORY STRUCTURE

Cobalt-Boron (CoB) Layer for Magnetic Recording Devices, Memory Dev...

MRAM STRUCTURE WITH CHIRAL SPIN-ORBIT-TORQUE METAL ELECTRODE

SOT MRAM STRUCTURE AND FABRICATING METHOD OF THE SAME

MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM) DEVICE AND METHOD OF F...

MAGNETIC MEMORY AND MANUFACTURING METHOD THEREOF

MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

Highly Textured 001 BiSb And Materials for Making Same

Doped BiSb (012) or Undoped BiSb (001) Topological Insulator with G...

HALL EFFECT DEVICE WITH TRENCH ABOUT A MICRON OR GREATER IN DEPTH

VALLEYTRONIC LOGIC DEVICES COMPRISING MONOCHALCOGENIDES

MEMORY CELL, MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

MEMORY DEVICE AND SEMICONDUCTOR DIE

MAGNETIC MEMORY USING SPIN CURRENT, OPERATING METHOD THEREOF, AND E...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

CURRENT SENSOR INTEGRATED CIRCUIT WITH A DUAL GAUGE LEAD FRAME

SPIN-ORBIT READOUT USING TRANSITION METAL DICHALCOGENIDES AND PROXI...

SPIN-ORBIT-TORQUE BASED MAGNETIC SENSOR AND A MAGNETIC FIELD MEASUR...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

MAGNETO RESISTIVE ELEMENT

EMBEDDED MAGNETORESISTIVE RANDOM ACCESS MEMORY

MAGNETIC MEMORY DEVICE AND METHOD OF OPERATING THE SAME

INTERCONNECTS WITH SPINTRONIC LOGIC DEVICES

Memory Device Including Bottom Electrode Bridges and Method of Manu...

MEMORY STRUCTURE AND FORMATION METHOD THEREOF

MULTIFERROIC TUNNEL JUNCTION MEMORY DEVICE AND RELATED METHODS

Doping Process To Refine Grain Size For Smoother BiSb Film Surface

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

MAGNETIC MEMORY DEVICE

SYNTHETIC ANTIFERROMAGNET-BASED PROBABILISTIC COMPUTING DEVICES