of III-V compounds

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CPC
H01L21/3245

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/3245of III-V compounds

Industries

Patents Grantslast 30 patents

Information Patent Grant
Method of fabricating gallium nitride substrate using ion implantation
- Patent number 12,183,575
- Issue date Dec 31, 2024
- IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)
- Jea Gun Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system of junction termination extension in high voltage...
- Patent number 12,113,101
- Issue date Oct 8, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Subhash Srinivas Pidaparthi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure, HEMT structure and method of forming the same
- Patent number 12,107,156
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yao-Chung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of manufacturing high electron mobility transistors having...
- Patent number 12,015,075
- Issue date Jun 18, 2024
- MACOM Technology Solutions Holdings, Inc.
- Kyle Bothe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical MOSFET having a high resistance region
- Patent number 12,009,390
- Issue date Jun 11, 2024
- Fuji Electric Co., Ltd.
- Katsunori Ueno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 11,862,686
- Issue date Jan 2, 2024
- Fuji Electric Co., Ltd.
- Shinya Takashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective capping processes and structures formed thereby
- Patent number 11,830,742
- Issue date Nov 28, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Chien Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN devices with ion implanted ohmic contacts and method of fabrica...
- Patent number 11,817,318
- Issue date Nov 14, 2023
- The Government of the United States of America, as represented by the Secreta...
- Travis J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Supports for a semiconductor structure and associated wafers for an...
- Patent number 11,735,685
- Issue date Aug 22, 2023
- Soitec
- David Sotta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for preparing a p-type semiconductor structure, enhancement...
- Patent number 11,646,357
- Issue date May 9, 2023
- ENKRIS SEMICONDUCTOR, INC.
- Kai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-leakage regrown GaN p-n junctions for GaN power devices
- Patent number 11,626,483
- Issue date Apr 11, 2023
- Arizona Board of Regents on behalf of Arizona State University
- Yuji Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for dry etching compound materials
- Patent number 11,605,542
- Issue date Mar 14, 2023
- Tokyo Electron Limited
- Peter Ventzek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In-situ p-type activation of III-nitride films grown via metal orga...
- Patent number 11,600,496
- Issue date Mar 7, 2023
- Northwestern University
- Manijeh Razeghi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor laminate, semiconductor device, method of man...
- Patent number 11,600,704
- Issue date Mar 7, 2023
- Sumitomo Chemical Company, Limited
- Hajime Fujikura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride semiconductor template and nitride semiconductor device
- Patent number 11,574,809
- Issue date Feb 7, 2023
- Sumitomo Chemical Company, Limited
- Hajime Fujikura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Electrode with alloy interface
- Patent number 11,557,482
- Issue date Jan 17, 2023
- International Business Machines Corporation
- Chih-Chao Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming fluorine doped high electron mobility transisto...
- Patent number 11,545,567
- Issue date Jan 3, 2023
- Vanguard International Semiconductor Corporation
- Chih-Yen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of an HEMT transistor of the normally off type...
- Patent number 11,538,922
- Issue date Dec 27, 2022
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure, HEMT structure and method of forming the same
- Patent number 11,532,740
- Issue date Dec 20, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yao-Chung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN devices with ion implanted ohmic contacts and method of fabrica...
- Patent number 11,532,478
- Issue date Dec 20, 2022
- The Government of the United States of America, as represented by the Secreta...
- Travis J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma-based edge terminations for gallium nitride power devices
- Patent number 11,417,529
- Issue date Aug 16, 2022
- Arizona Board of Regents on behalf of Arizona State University
- Yuji Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective capping processes and structures formed thereby
- Patent number 11,380,542
- Issue date Jul 5, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Chien Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device and semiconductor device
- Patent number 11,362,174
- Issue date Jun 14, 2022
- Kabushiki Kaisha Toshiba
- Tatsuo Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of forming an electronic device including a transistor stru...
- Patent number 11,342,443
- Issue date May 24, 2022
- Semiconductor Components Industries, LLC
- Peter Moens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement mode III-nitride devices having an Al1-xSixO gate insul...
- Patent number 11,322,599
- Issue date May 3, 2022
- Transphorm Technology, Inc.
- Carl Joseph Neufeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Control of p-contact resistance in a semiconductor light emitting d...
- Patent number 11,289,624
- Issue date Mar 29, 2022
- Lumileds LLC
- Kwong-Hin Henry Choy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a donor substrate for making optoelectroni...
- Patent number 11,245,050
- Issue date Feb 8, 2022
- Soitec
- David Sotta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure of epitaxy on heterogeneous substrate and method for fabr...
- Patent number 11,232,950
- Issue date Jan 25, 2022
- Institute of Nuclear Energy Research, Atomic Energy Council, Executive Yuan,...
- Jheng Hao Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN devices with ion implanted ohmic contacts and method of fabrica...
- Patent number 11,201,058
- Issue date Dec 14, 2021
- The Government of the United States of America, as represented by the Secreta...
- Travis J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor template and nitride semiconductor device
- Patent number 11,075,077
- Issue date Jul 27, 2021
- SCIOCS COMPANY LIMITED
- Hajime Fujikura
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20250006798
- Publication date Jan 2, 2025
- Panasonic Intellectual Property Management Co., Ltd.
- Hideyuki OKITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM OF JUNCTION TERMINATION EXTENSION IN HIGH VOLTAGE...
- Publication number 20250006784
- Publication date Jan 2, 2025
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Subhash Srinivas PIDAPARTHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR DRY-CLEANING AlN HEATER FOR SEMICONDUCTOR...
- Publication number 20240363328
- Publication date Oct 31, 2024
- WONIK QNC Corporation
- Eun Young CHOI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR DEVICE, AND METHOD
- Publication number 20240321590
- Publication date Sep 26, 2024
- TURUN YLIOPISTO
- Zahra Jahanshah Rad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PREPARING SEMICONDUCTOR LAYER
- Publication number 20240213021
- Publication date Jun 27, 2024
- National Taiwan University
- Yi-Chia CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE DEVICE WITH SINGLE METALLIZATION PROCESS FOR OHMIC...
- Publication number 20240113235
- Publication date Apr 4, 2024
- Wolfspeed, Inc.
- Rahul R. Potera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240047213
- Publication date Feb 8, 2024
- DENSO CORPORATION
- TAKASHI OKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF SEMICONDUCTOR ELEMENT BY USING EXTREME ULTR...
- Publication number 20230411155
- Publication date Dec 21, 2023
- Samsung Electronics Co., Ltd.
- Youngho HWANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicidation Process for Semiconductor Devices
- Publication number 20230326764
- Publication date Oct 12, 2023
- TOKYO ELECTRON LIMITED
- Robert D. Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FORMING THE SAME
- Publication number 20230238445
- Publication date Jul 27, 2023
- UNITED MICROELECTRONICS CORP.
- Ko-Wei Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN Devices With Ion Implanted Ohmic Contacts and Method of Fabrica...
- Publication number 20230207323
- Publication date Jun 29, 2023
- The Government of the United States of America, as represented by the Secreta...
- Travis J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE, HEMT STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20230123907
- Publication date Apr 20, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- YAO-CHUNG CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY DIODE AND MANUFACTURING METHOD THEREOF
- Publication number 20230099660
- Publication date Mar 30, 2023
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREOF
- Publication number 20220406614
- Publication date Dec 22, 2022
- DENSO CORPORATION
- KENTA WATANABE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHODS THEREOF
- Publication number 20220399458
- Publication date Dec 15, 2022
- University of Delaware
- Peng Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective Capping Processes and Structures Formed Thereby
- Publication number 20220328309
- Publication date Oct 13, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Chien CHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN Devices With Ion Implanted Ohmic Contacts and Method of Fabrica...
- Publication number 20220254639
- Publication date Aug 11, 2022
- The Government of the United States of America, as represented by the Secreta...
- Travis J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Technique for GaN Epitaxy on Insulating Substrates
- Publication number 20220246423
- Publication date Aug 4, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Nicholas S. DELLAS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES AND METHODS INVOLVING ACTIVATION OF BURIED DOPANTS USING IO...
- Publication number 20220230883
- Publication date Jul 21, 2022
- The Board of Trustees of the Leland Stanford Junior University
- Srabanti Chowdhury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING GALLIUM NITRIDE SUBSTRATE USING ION IMPLANTATION
- Publication number 20220115228
- Publication date Apr 14, 2022
- IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
- Jea Gun PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN Devices With Ion Implanted Ohmic Contacts and Method of Fabrica...
- Publication number 20220059353
- Publication date Feb 24, 2022
- The Government of the United States of America, as represented by the Secreta...
- Travis J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN Devices With Ion Implanted Ohmic Contacts and Method of Fabrica...
- Publication number 20220059352
- Publication date Feb 24, 2022
- The Government of the United States of America, as represented by the Secreta...
- Travis J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM OF JUNCTION TERMINATION EXTENSION IN HIGH VOLTAGE...
- Publication number 20220013626
- Publication date Jan 13, 2022
- NEXGEN POWER SYSTEMS, INC.
- Subhash Srinivas Pidaparthi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPPORTS FOR A SEMICONDUCTOR STRUCTURE AND ASSOCIATED WAFERS FOR AN...
- Publication number 20210351318
- Publication date Nov 11, 2021
- SOITEC
- David Sotta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Dry Etching Compound Materials
- Publication number 20210296132
- Publication date Sep 23, 2021
- TOKYO ELECTRON LIMITED
- Peter Ventzek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE, HEMT STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20210226047
- Publication date Jul 22, 2021
- Taiwan Semiconductor Manufacturing company Ltd.
- YAO-CHUNG CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA-BASED EDGE TERMINATIONS FOR GALLIUM NITRIDE POWER DEVICES
- Publication number 20210202257
- Publication date Jul 1, 2021
- Yuji Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MANUFACTURING METHOD AND SEMICONDUCTOR MANUFACTURING...
- Publication number 20210193470
- Publication date Jun 24, 2021
- Sumitomo Heavy Industries, Ltd.
- Teruhisa Kawasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IN-SITU P-TYPE ACTIVATION OF III-NITRIDE FILMS GROWN VIA METAL ORGA...
- Publication number 20210151329
- Publication date May 20, 2021
- Northwestern University
- Manijeh Razeghi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PREPARING A P-TYPE SEMICONDUCTOR LAYER, ENHANCED DEVICE...
- Publication number 20210143264
- Publication date May 13, 2021
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS

of III-V compounds

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of fabricating gallium nitride substrate using ion implantation

Method and system of junction termination extension in high voltage...

Semiconductor structure, HEMT structure and method of forming the same

Methods of manufacturing high electron mobility transistors having...

Vertical MOSFET having a high resistance region

Nitride semiconductor device

Selective capping processes and structures formed thereby

GaN devices with ion implanted ohmic contacts and method of fabrica...

Supports for a semiconductor structure and associated wafers for an...

Method for preparing a p-type semiconductor structure, enhancement...

Low-leakage regrown GaN p-n junctions for GaN power devices

Method for dry etching compound materials

In-situ p-type activation of III-nitride films grown via metal orga...

Nitride semiconductor laminate, semiconductor device, method of man...

Nitride semiconductor template and nitride semiconductor device

Electrode with alloy interface

Methods for forming fluorine doped high electron mobility transisto...

Manufacturing method of an HEMT transistor of the normally off type...

Semiconductor structure, HEMT structure and method of forming the same

GaN devices with ion implanted ohmic contacts and method of fabrica...

Plasma-based edge terminations for gallium nitride power devices

Selective capping processes and structures formed thereby

Method of manufacturing semiconductor device and semiconductor device

Process of forming an electronic device including a transistor stru...

Enhancement mode III-nitride devices having an Al1-xSixO gate insul...

Control of p-contact resistance in a semiconductor light emitting d...

Method for manufacturing a donor substrate for making optoelectroni...

Structure of epitaxy on heterogeneous substrate and method for fabr...

GaN devices with ion implanted ohmic contacts and method of fabrica...

Nitride semiconductor template and nitride semiconductor device

Patents Applicationslast 30 patents

NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

METHOD AND SYSTEM OF JUNCTION TERMINATION EXTENSION IN HIGH VOLTAGE...

METHOD AND APPARATUS FOR DRY-CLEANING AlN HEATER FOR SEMICONDUCTOR...

SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR DEVICE, AND METHOD

METHOD FOR PREPARING SEMICONDUCTOR LAYER

SILICON CARBIDE DEVICE WITH SINGLE METALLIZATION PROCESS FOR OHMIC...

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

MANUFACTURING METHOD OF SEMICONDUCTOR ELEMENT BY USING EXTREME ULTR...

Silicidation Process for Semiconductor Devices

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FORMING THE SAME

GaN Devices With Ion Implanted Ohmic Contacts and Method of Fabrica...

SEMICONDUCTOR STRUCTURE, HEMT STRUCTURE AND METHOD OF FORMING THE SAME

SCHOTTKY DIODE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREOF

SEMICONDUCTOR DEVICE AND FABRICATION METHODS THEREOF

Selective Capping Processes and Structures Formed Thereby

GaN Devices With Ion Implanted Ohmic Contacts and Method of Fabrica...

Technique for GaN Epitaxy on Insulating Substrates

DEVICES AND METHODS INVOLVING ACTIVATION OF BURIED DOPANTS USING IO...

METHOD OF FABRICATING GALLIUM NITRIDE SUBSTRATE USING ION IMPLANTATION

GaN Devices With Ion Implanted Ohmic Contacts and Method of Fabrica...

GaN Devices With Ion Implanted Ohmic Contacts and Method of Fabrica...

METHOD AND SYSTEM OF JUNCTION TERMINATION EXTENSION IN HIGH VOLTAGE...

SUPPORTS FOR A SEMICONDUCTOR STRUCTURE AND ASSOCIATED WAFERS FOR AN...

Method for Dry Etching Compound Materials

SEMICONDUCTOR STRUCTURE, HEMT STRUCTURE AND METHOD OF FORMING THE SAME

PLASMA-BASED EDGE TERMINATIONS FOR GALLIUM NITRIDE POWER DEVICES

SEMICONDUCTOR MANUFACTURING METHOD AND SEMICONDUCTOR MANUFACTURING...

IN-SITU P-TYPE ACTIVATION OF III-NITRIDE FILMS GROWN VIA METAL ORGA...

METHOD FOR PREPARING A P-TYPE SEMICONDUCTOR LAYER, ENHANCED DEVICE...