of silicon in uncombined form

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H01L21/31662

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/31662of silicon in uncombined form

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing semiconductor device and method of processi...
- Patent number 10,290,494
- Issue date May 14, 2019
- Kokusai Electric Corporation
- Masanao Fukuda
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Thermal oxide film formation method for silicon single crystal wafer
- Patent number 9,171,737
- Issue date Oct 27, 2015
- SHIH-ETSU HANDOTAL CO., LTD.
- Hiroyuki Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process to dissolve the oxide layer in the peripheral ring of a str...
- Patent number 9,136,113
- Issue date Sep 15, 2015
- Soitec
- Didier Landru
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective oxidation process
- Patent number 9,127,340
- Issue date Sep 8, 2015
- ASM International N.V.
- Jerome Noiray
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of improving oxide growth rate of selective oxidation processes
- Patent number 9,117,661
- Issue date Aug 25, 2015
- Applied Materials, Inc.
- Yoshitaka Yokota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing SOI substrate and method for manufacturing...
- Patent number 8,946,051
- Issue date Feb 3, 2015
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Safe handling of low energy, high dose arsenic, phosphorus, and bor...
- Patent number 8,927,400
- Issue date Jan 6, 2015
- Applied Materials, Inc.
- Majeed A. Foad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a non-volatile s...
- Patent number 8,895,388
- Issue date Nov 25, 2014
- Semiconductor Energy Laboratory Co., Ltd.
- Tetsuya Kakehata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a non-volatile semiconductor memory device...
- Patent number 8,865,546
- Issue date Oct 21, 2014
- Fujitsu Semiconductor Limited
- Tetsuya Yamada
- G11 - INFORMATION STORAGE
Information Patent Grant
SOI substrate and manufacturing method of the same, and semiconduct...
- Patent number 8,847,314
- Issue date Sep 30, 2014
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-temperature dielectric formation for devices with strained germ...
- Patent number 8,580,034
- Issue date Nov 12, 2013
- Tokyo Electron Limited
- Gert Leusink
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate processing method
- Patent number 8,574,676
- Issue date Nov 5, 2013
- National University Corporation Nagaoka University of Technology
- Kanji Yasui
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor substrate, semiconductor device and manufacturing met...
- Patent number 8,552,499
- Issue date Oct 8, 2013
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of improving oxide growth rate of selective oxidation processes
- Patent number 8,546,271
- Issue date Oct 1, 2013
- Applied Materials, Inc.
- Yoshitaka Yokota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of thermally treating silicon with oxygen
- Patent number 8,497,193
- Issue date Jul 30, 2013
- Applied Materials, Inc.
- Yoshitaka Yokota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures including an at least partially reoxidized oxide material
- Patent number 8,492,851
- Issue date Jul 23, 2013
- Micron Technology, Inc.
- Li Li
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of forming an insulation structure and method of manufacturi...
- Patent number 8,481,387
- Issue date Jul 9, 2013
- Samsung Electronics Co., Ltd.
- Jung-Geun Jee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 8,470,648
- Issue date Jun 25, 2013
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a contact plug connecting to a silicide...
- Patent number 8,466,509
- Issue date Jun 18, 2013
- Fujitsu Semiconductor Limited
- Tetsuya Yamada
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods for forming conformal oxide layers on semiconductor devices
- Patent number 8,435,906
- Issue date May 7, 2013
- Applied Materials, Inc.
- Agus S. Tjandra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Water cooled gas injector
- Patent number 8,409,353
- Issue date Apr 2, 2013
- Applied Materials, Inc.
- Yoshitaka Yokota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for forming silicon oxide film
- Patent number 8,389,420
- Issue date Mar 5, 2013
- Tokyo Electron Limited
- Yoshiro Kabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Finishing method for a silicon on insulator substrate
- Patent number 8,389,412
- Issue date Mar 5, 2013
- Soitec
- Walter Schwarzenbach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma oxidation processing method, plasma processing apparatus and...
- Patent number 8,372,761
- Issue date Feb 12, 2013
- Tokyo Electron Limited
- Yoshiro Kabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In situ growth of oxide and silicon layers
- Patent number 8,317,921
- Issue date Nov 27, 2012
- ASM America, Inc.
- Armand Ferro
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method and apparatus for forming silicon oxide film
- Patent number 8,318,267
- Issue date Nov 27, 2012
- Tokyo Electron Limited
- Yoshiro Kabe
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Mesa type semiconductor device and manufacturing method thereof
- Patent number 8,319,317
- Issue date Nov 27, 2012
- Sanyo Semiconductor Co., Ltd.
- Katsuyuki Seki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for cleaning a substrate surface
- Patent number 8,309,440
- Issue date Nov 13, 2012
- Applied Materials, Inc.
- Errol Antonio C. Sanchez
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method and apparatus of plasma treatment
- Patent number 8,298,627
- Issue date Oct 30, 2012
- Canon Anelva Corporation
- Takashi Minami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanotube processing employing solid-condensed-gas-layers
- Patent number 8,273,257
- Issue date Sep 25, 2012
- President and Fellows of Harvard College
- Jene A. Golovchenko
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
SAFE HANDLING OF LOW ENERGY, HIGH DOSE ARSENIC, PHOSPHORUS, AND BOR...
- Publication number 20140248759
- Publication date Sep 4, 2014
- Applied Materials, Inc.
- Majeed A. FOAD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF IMPROVING OXIDE GROWTH RATE OF SELECTIVE OXIDATION PROCESSES
- Publication number 20140057455
- Publication date Feb 27, 2014
- Applied Materials, Inc.
- Yoshitaka YOKOTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS TO DISSOLVE THE OXIDE LAYER IN THE PERIPHERAL RING OF A STR...
- Publication number 20140030877
- Publication date Jan 30, 2014
- SOITEC
- Didier LANDRU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR REOXIDIZING AN OXIDE AND FOR FABRICATING SEMICONDUCTOR...
- Publication number 20130309855
- Publication date Nov 21, 2013
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THERMAL OXIDE FILM FORMATION METHOD FOR SILICON SINGLE CRYSTAL WAFER
- Publication number 20130178071
- Publication date Jul 11, 2013
- Shin-Etsu Handotai Co., Ltd.
- Hiroyuki Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR CLEANING A SUBSTRATE SURFACE
- Publication number 20130068390
- Publication date Mar 21, 2013
- Applied Materials, Inc.
- Errol Antonio C. SANCHEZ
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A CONTACT PLUG CONNECTING TO A SILICIDE...
- Publication number 20130005098
- Publication date Jan 3, 2013
- FUJITSU SEMICONDUCTOR LIMITED
- Tetsuya Yamada
- G11 - INFORMATION STORAGE
Information Patent Application
PRODUCING METHOD OF SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING A...
- Publication number 20120064730
- Publication date Mar 15, 2012
- Takashi Ozaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
- Publication number 20120058645
- Publication date Mar 8, 2012
- Kabushiki Kaisha Toshiba
- Kouichi Muraoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Water cooled gas injector
- Publication number 20120031332
- Publication date Feb 9, 2012
- Applied Materials, Inc.
- Yoshitaka Yokota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINISHING METHOD FOR A SILICON ON INSULATOR SUBSTRATE
- Publication number 20120021613
- Publication date Jan 26, 2012
- Walter Schwarzenbach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING AN INSULATION STRUCTURE AND METHOD OF MANUFACTURI...
- Publication number 20110275190
- Publication date Nov 10, 2011
- Jung-Geun Jee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS TO DISSOLVE THE OXIDE LAYER IN THE PERIPHERAL RING OF A STR...
- Publication number 20110275226
- Publication date Nov 10, 2011
- Didier Landru
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR CLEANING A SUBSTRATE SURFACE
- Publication number 20110263103
- Publication date Oct 27, 2011
- Errol Antonio C. SANCHEZ
- C30 - CRYSTAL GROWTH
Information Patent Application
SUBSTRATE PROCESSING APPARATUS
- Publication number 20110247560
- Publication date Oct 13, 2011
- Tokyo Electron Limited
- Kanji Yasui
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method of thermally treating silicon with oxygen
- Publication number 20110250764
- Publication date Oct 13, 2011
- Applied Materials, Inc.
- Yoshitaka Yokota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF IMPROVING OXIDE GROWTH RATE OF SELECTIVE OXIDATION PROCESSES
- Publication number 20110230060
- Publication date Sep 22, 2011
- YOSHITAKA YOKOTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
- Publication number 20110229637
- Publication date Sep 22, 2011
- National University Corporation Nagaoka University Technology
- Kanji Yasui
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHODS FOR OXIDATION OF A SEMICONDUCTOR DEVICE
- Publication number 20110217850
- Publication date Sep 8, 2011
- Applied Materials, Inc.
- RAJESH MANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR FORMING SILICON OXIDE FILM
- Publication number 20110171835
- Publication date Jul 14, 2011
- TOKYO ELECTRON LIMITED
- Yoshiro KABE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE AND MANUFACTURING MET...
- Publication number 20110163381
- Publication date Jul 7, 2011
- SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIRECT OXIDATION METHOD FOR SEMICONDUCTOR PROCESS
- Publication number 20110129604
- Publication date Jun 2, 2011
- TOKYO ELECTRON LIMITED
- Hisashi Inoue
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD AND APPARATUS OF PLASMA TREATMENT
- Publication number 20110124200
- Publication date May 26, 2011
- Canon ANELVA Corporation
- Takashi Minami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SEMICONDUCTOR DEVICE
- Publication number 20110104868
- Publication date May 5, 2011
- Elpida Memory, Inc.
- Shingo UJIHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR FORMING AN INTERFACE BETWEEN SILICON CARBIDE AND SILICO...
- Publication number 20110095304
- Publication date Apr 28, 2011
- STMicroelectronics S.r.l.
- Giovanni Abagnale
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI SUBSTRATE AND MANUFACTURING METHOD OF THE SAME, AND SEMICONDUCT...
- Publication number 20110037123
- Publication date Feb 17, 2011
- SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING OXIDE FILM ON SILICON WAFER
- Publication number 20110033958
- Publication date Feb 10, 2011
- Shin-Etsu Handotai Co., Ltd.
- Tsuyoshi Ohtsuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20110027968
- Publication date Feb 3, 2011
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming silicon oxide film, storage medium, and plasma p...
- Publication number 20110017586
- Publication date Jan 27, 2011
- TOKYO ELECTRON LIMITED
- Hideo Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXIDATION METHOD AND APPARATUS FOR SEMICONDUCTOR PROCESS
- Publication number 20100319619
- Publication date Dec 23, 2010
- TOKYO ELECTRON LIMITED
- Takehiko FUJITA
- C30 - CRYSTAL GROWTH

of silicon in uncombined form

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of manufacturing semiconductor device and method of processi...

Thermal oxide film formation method for silicon single crystal wafer

Process to dissolve the oxide layer in the peripheral ring of a str...

Selective oxidation process

Method of improving oxide growth rate of selective oxidation processes

Method for manufacturing SOI substrate and method for manufacturing...

Safe handling of low energy, high dose arsenic, phosphorus, and bor...

Method of manufacturing a semiconductor device and a non-volatile s...

Method for manufacturing a non-volatile semiconductor memory device...

SOI substrate and manufacturing method of the same, and semiconduct...

Low-temperature dielectric formation for devices with strained germ...

Substrate processing method

Semiconductor substrate, semiconductor device and manufacturing met...

Method of improving oxide growth rate of selective oxidation processes

Method of thermally treating silicon with oxygen

Structures including an at least partially reoxidized oxide material

Method of forming an insulation structure and method of manufacturi...

Method for manufacturing semiconductor device

Semiconductor device having a contact plug connecting to a silicide...

Methods for forming conformal oxide layers on semiconductor devices

Water cooled gas injector

Method and apparatus for forming silicon oxide film

Finishing method for a silicon on insulator substrate

Plasma oxidation processing method, plasma processing apparatus and...

In situ growth of oxide and silicon layers

Method and apparatus for forming silicon oxide film

Mesa type semiconductor device and manufacturing method thereof

Method and apparatus for cleaning a substrate surface

Method and apparatus of plasma treatment

Nanotube processing employing solid-condensed-gas-layers

Patents Applicationslast 30 patents

SAFE HANDLING OF LOW ENERGY, HIGH DOSE ARSENIC, PHOSPHORUS, AND BOR...

METHOD OF IMPROVING OXIDE GROWTH RATE OF SELECTIVE OXIDATION PROCESSES

PROCESS TO DISSOLVE THE OXIDE LAYER IN THE PERIPHERAL RING OF A STR...

METHODS FOR REOXIDIZING AN OXIDE AND FOR FABRICATING SEMICONDUCTOR...

THERMAL OXIDE FILM FORMATION METHOD FOR SILICON SINGLE CRYSTAL WAFER

METHOD AND APPARATUS FOR CLEANING A SUBSTRATE SURFACE

SEMICONDUCTOR DEVICE HAVING A CONTACT PLUG CONNECTING TO A SILICIDE...

PRODUCING METHOD OF SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING A...

METHOD OF FORMING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

Water cooled gas injector

FINISHING METHOD FOR A SILICON ON INSULATOR SUBSTRATE

METHOD OF FORMING AN INSULATION STRUCTURE AND METHOD OF MANUFACTURI...

PROCESS TO DISSOLVE THE OXIDE LAYER IN THE PERIPHERAL RING OF A STR...

METHOD AND APPARATUS FOR CLEANING A SUBSTRATE SURFACE

SUBSTRATE PROCESSING APPARATUS

Method of thermally treating silicon with oxygen

METHOD OF IMPROVING OXIDE GROWTH RATE OF SELECTIVE OXIDATION PROCESSES

SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

METHODS FOR OXIDATION OF A SEMICONDUCTOR DEVICE

METHOD AND APPARATUS FOR FORMING SILICON OXIDE FILM

SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE AND MANUFACTURING MET...

DIRECT OXIDATION METHOD FOR SEMICONDUCTOR PROCESS

METHOD AND APPARATUS OF PLASMA TREATMENT

METHOD OF FORMING SEMICONDUCTOR DEVICE

PROCESS FOR FORMING AN INTERFACE BETWEEN SILICON CARBIDE AND SILICO...

SOI SUBSTRATE AND MANUFACTURING METHOD OF THE SAME, AND SEMICONDUCT...

METHOD FOR FORMING OXIDE FILM ON SILICON WAFER

SEMICONDUCTOR DEVICE

Method for forming silicon oxide film, storage medium, and plasma p...

OXIDATION METHOD AND APPARATUS FOR SEMICONDUCTOR PROCESS