of the field-effect transistor type

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H01L27/228

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

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H01L27/228of the field-effect transistor type

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and manufacturing method of semiconductor device
- Patent number 11,706,999
- Issue date Jul 18, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien-Min Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory device having a ferromagnetic element
- Patent number 11,672,183
- Issue date Jun 6, 2023
- Samsung Electronics Co., Ltd.
- Sang Hwan Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory
- Patent number 11,672,181
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huang-Wen Tseng
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic device and magnetic random access memory
- Patent number 11,672,185
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Feng Ying
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and manufacturing method of semiconductor device
- Patent number 11,672,186
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien-Min Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive random access memory (MRAM) device
- Patent number 11,665,970
- Issue date May 30, 2023
- Samsung Electronics Co., Ltd.
- Whan-Kyun Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin orbit coupling memory device with top spin orbit coupling elec...
- Patent number 11,665,975
- Issue date May 30, 2023
- Intel Corporation
- Tanay Gosavi
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of forming memory cell
- Patent number 11,665,911
- Issue date May 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yuan-Tai Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction device and method
- Patent number 11,665,977
- Issue date May 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tai-Yen Peng
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic junctions having enhanced tunnel magnetoresistance and uti...
- Patent number 11,665,979
- Issue date May 30, 2023
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory and manufacturing method thereof
- Patent number 11,659,718
- Issue date May 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ji-Feng Ying
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device
- Patent number 11,659,719
- Issue date May 23, 2023
- Samsung Electronics Co., Ltd.
- Kilho Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device, magnetoresistive random access memory device,...
- Patent number 11,659,770
- Issue date May 23, 2023
- Samsung Electronics Co., Ltd.
- Dae-Shik Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Structure and method for integrating MRAM and logic devices
- Patent number 11,659,771
- Issue date May 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsiang-Ku Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for MRAM devices having spacer element
- Patent number 11,659,774
- Issue date May 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsiang-Ku Shen
- G11 - INFORMATION STORAGE
Information Patent Grant
Manufacturing techniques and corresponding devices for magnetic tun...
- Patent number 11,653,572
- Issue date May 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric field effect transistors (FeFETs) having band-enginee...
- Patent number 11,640,995
- Issue date May 2, 2023
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In-plane spin orbit torque magnetoresistive stack/structure and met...
- Patent number 11,637,235
- Issue date Apr 25, 2023
- EVERSPIN TECHNOLOGIES, INC.
- Sumio Ikegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin-orbit torque magnetoresistance effect element and magnetic memory
- Patent number 11,637,236
- Issue date Apr 25, 2023
- TDK Corporation
- Tomoyuki Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for multilayer structure of magnetic body and...
- Patent number 11,637,234
- Issue date Apr 25, 2023
- Tokyo Institute of Technology
- Nam Hai Pham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of integration of a magnetoresistive structure
- Patent number 11,631,806
- Issue date Apr 18, 2023
- EVERSPIN TECHNOLOGIES, INC.
- Kerry Joseph Nagel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method thereof, and memory
- Patent number 11,626,558
- Issue date Apr 11, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Xiaoguang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin element and magnetic memory
- Patent number 11,624,790
- Issue date Apr 11, 2023
- TDK Corporation
- Atsushi Tsumita
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi terminal device stack formation methods
- Patent number 11,626,559
- Issue date Apr 11, 2023
- Integrated Silicon Solution, (Cayman) Inc.
- Thomas Boone
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stackable symmetrical operation memory bit cell structure with bidi...
- Patent number 11,621,297
- Issue date Apr 4, 2023
- International Business Machines Corporation
- Alexander Reznicek
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element, magnetic memory device, and writing and r...
- Patent number 11,610,614
- Issue date Mar 21, 2023
- TOHOKU UNIVERSITY
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive random access memory having a ring of magnetic tun...
- Patent number 11,611,035
- Issue date Mar 21, 2023
- United Microelectronics Corp.
- Chung-Liang Chu
- G11 - INFORMATION STORAGE
Information Patent Grant
MTJ-based analog memory device
- Patent number 11,605,409
- Issue date Mar 14, 2023
- International Business Machines Corporation
- Dimitri Houssameddine
- G11 - INFORMATION STORAGE
Information Patent Grant
Transistor, integrated circuit, and manufacturing method of transistor
- Patent number 11,605,740
- Issue date Mar 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Marcus Johannes Henricus Van Dal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction structures and related methods
- Patent number 11,605,670
- Issue date Mar 14, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Zong-You Luo
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
CIRCUIT ARCHITECTURE USING TRANSISTORS WITH DYNAMIC DUAL FUNCTIONAL...
- Publication number 20240172454
- Publication date May 23, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE MRAM WITH FRONTSIDE DEVICES
- Publication number 20240114699
- Publication date Apr 4, 2024
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOT MRAM STRUCTURE AND FABRICATING METHOD OF THE SAME
- Publication number 20240107777
- Publication date Mar 28, 2024
- UNITED MICROELECTRONICS CORP.
- Chih-Wei Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FET WITH THREE-TERMINAL SOT MRAM
- Publication number 20240105244
- Publication date Mar 28, 2024
- International Business Machines Corporation
- Pouya Hashemi
- G11 - INFORMATION STORAGE
Information Patent Application
Pillar Based Memory (MRAM) Embedded within the Buried Power Rail wi...
- Publication number 20240090235
- Publication date Mar 14, 2024
- International Business Machines Corporation
- Wu-Chang Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM INTEGRATION WITH SELF-ALIGNED DIRECT BACK SIDE CONTACT
- Publication number 20240057345
- Publication date Feb 15, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL ARRAY WITH INCREASED SOURCE BIAS VOLTAGE
- Publication number 20240049470
- Publication date Feb 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Jun Wu
- G11 - INFORMATION STORAGE
Information Patent Application
MEMRISTOR AND NEUROMORPHIC DEVICE
- Publication number 20240020520
- Publication date Jan 18, 2024
- TDK Corporation
- Shogo YAMADA
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240016066
- Publication date Jan 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Sheng Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE RANDOM ACCESS MEMORY
- Publication number 20240008369
- Publication date Jan 4, 2024
- UNITED MICROELECTRONICS CORP.
- Hui-Lin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VALLEYTRONIC LOGIC DEVICES COMPRISING MONOCHALCOGENIDES
- Publication number 20230413684
- Publication date Dec 21, 2023
- Intel Corporation
- Punyashloka Debashis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND FORMATION METHOD THEREOF
- Publication number 20230397501
- Publication date Dec 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ya-Jui TSOU
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230389440
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Yuan Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETO-RESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE MAGNETO-R...
- Publication number 20230389444
- Publication date Nov 30, 2023
- TDK Corporation
- Tomoyuki SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20230389439
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Lin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20230380191
- Publication date Nov 23, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Xiaoguang WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230354717
- Publication date Nov 2, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- BI-SHEN LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM MEMORY ARRAY YIELD IMPROVEMENT
- Publication number 20230329122
- Publication date Oct 12, 2023
- International Business Machines Corporation
- Dimitri Houssameddine
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-ORBIT READOUT USING TRANSITION METAL DICHALCOGENIDES AND PROXI...
- Publication number 20230320230
- Publication date Oct 5, 2023
- Intel Corporation
- Punyashloka Debashis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TETRAGONAL HALF METALLIC HEUSLER COMPOUNDS
- Publication number 20230320231
- Publication date Oct 5, 2023
- International Business Machines Corporation
- Sergey Faleev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TETRAGONAL HALF METALLIC HALF-HEUSLER COMPOUNDS
- Publication number 20230317129
- Publication date Oct 5, 2023
- International Business Machines Corporation
- Sergey Faleev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED MAGNETORESISTIVE RANDOM ACCESS MEMORY
- Publication number 20230309320
- Publication date Sep 28, 2023
- International Business Machines Corporation
- Heng Wu
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY
- Publication number 20230309321
- Publication date Sep 28, 2023
- KIOXIA Corporation
- Naoharu SHIMOMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETO-RESISTIVE RANDOM ACCESS MEMORY MAGNETIC TUNNEL JUNCTION AND...
- Publication number 20230301198
- Publication date Sep 21, 2023
- Honeywell International Inc.
- Romney R. Katti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE
- Publication number 20230290397
- Publication date Sep 14, 2023
- KIOXIA Corporation
- Akira KATAYAMA
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE
- Publication number 20230292531
- Publication date Sep 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20230292530
- Publication date Sep 14, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Deyuan XIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETOELECTRIC SPIN-ORBIT DEVICE WITH IN-PLANE AND PERPENDICULAR M...
- Publication number 20230284538
- Publication date Sep 7, 2023
- Intel Corporation
- Punyashloka Debashis
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-ORBIT TORQUE MAGNETIC RANDOM ACCESS MEMORY CIRCUIT AND LAYOUT...
- Publication number 20230282261
- Publication date Sep 7, 2023
- UNITED MICROELECTRONICS CORP.
- Chun-Yen Tseng
- G11 - INFORMATION STORAGE
Information Patent Application
ONE TRANSISTOR AND N MEMORY ELEMENT BASED MEMORY BIT-CELL HAVING ST...
- Publication number 20230284456
- Publication date Sep 7, 2023
- Kepler Computing Inc.
- Rajeev Kumar Dokania
- H01 - BASIC ELECTRIC ELEMENTS

of the field-effect transistor type

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device and manufacturing method of semiconductor device

Magnetic memory device having a ferromagnetic element

Magnetic random access memory

Magnetic device and magnetic random access memory

Semiconductor device and manufacturing method of semiconductor device

Magnetoresistive random access memory (MRAM) device

Spin orbit coupling memory device with top spin orbit coupling elec...

Method of forming memory cell

Magnetic tunnel junction device and method

Magnetic junctions having enhanced tunnel magnetoresistance and uti...

Magnetic random access memory and manufacturing method thereof

Semiconductor device

Semiconductor device, magnetoresistive random access memory device,...

Structure and method for integrating MRAM and logic devices

Structure and method for MRAM devices having spacer element

Manufacturing techniques and corresponding devices for magnetic tun...

Ferroelectric field effect transistors (FeFETs) having band-enginee...

In-plane spin orbit torque magnetoresistive stack/structure and met...

Spin-orbit torque magnetoresistance effect element and magnetic memory

Manufacturing method for multilayer structure of magnetic body and...

Method of integration of a magnetoresistive structure

Semiconductor structure and manufacturing method thereof, and memory

Spin element and magnetic memory

Multi terminal device stack formation methods

Stackable symmetrical operation memory bit cell structure with bidi...

Magnetoresistive element, magnetic memory device, and writing and r...

Magnetoresistive random access memory having a ring of magnetic tun...

MTJ-based analog memory device

Transistor, integrated circuit, and manufacturing method of transistor

Magnetic tunnel junction structures and related methods

Patents Applicationslast 30 patents

CIRCUIT ARCHITECTURE USING TRANSISTORS WITH DYNAMIC DUAL FUNCTIONAL...

BACKSIDE MRAM WITH FRONTSIDE DEVICES

SOT MRAM STRUCTURE AND FABRICATING METHOD OF THE SAME

STACKED FET WITH THREE-TERMINAL SOT MRAM

Pillar Based Memory (MRAM) Embedded within the Buried Power Rail wi...

MRAM INTEGRATION WITH SELF-ALIGNED DIRECT BACK SIDE CONTACT

MEMORY CELL ARRAY WITH INCREASED SOURCE BIAS VOLTAGE

MEMRISTOR AND NEUROMORPHIC DEVICE

MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

MAGNETORESISTIVE RANDOM ACCESS MEMORY

VALLEYTRONIC LOGIC DEVICES COMPRISING MONOCHALCOGENIDES

MEMORY DEVICE AND FORMATION METHOD THEREOF

MAGNETIC MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

MAGNETO-RESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE MAGNETO-R...

MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

MRAM MEMORY ARRAY YIELD IMPROVEMENT

SPIN-ORBIT READOUT USING TRANSITION METAL DICHALCOGENIDES AND PROXI...

TETRAGONAL HALF METALLIC HEUSLER COMPOUNDS

TETRAGONAL HALF METALLIC HALF-HEUSLER COMPOUNDS

EMBEDDED MAGNETORESISTIVE RANDOM ACCESS MEMORY

MAGNETIC MEMORY

MAGNETO-RESISTIVE RANDOM ACCESS MEMORY MAGNETIC TUNNEL JUNCTION AND...

MEMORY DEVICE

MEMORY DEVICE

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

MAGNETOELECTRIC SPIN-ORBIT DEVICE WITH IN-PLANE AND PERPENDICULAR M...

SPIN-ORBIT TORQUE MAGNETIC RANDOM ACCESS MEMORY CIRCUIT AND LAYOUT...

ONE TRANSISTOR AND N MEMORY ELEMENT BASED MEMORY BIT-CELL HAVING ST...