of trenches having a shape other than rectangular or V-shape

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/76232of trenches having a shape other than rectangular or V-shape

Industries

Patents Grantslast 30 patents

Information Patent Grant
Fin end plug structures for advanced integrated circuit structure f...
- Patent number 11,961,838
- Issue date Apr 16, 2024
- Intel Corporation
- Byron Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal gate structure having portions of metal gate layers in c...
- Patent number 11,955,532
- Issue date Apr 9, 2024
- Intel Corporation
- Jeffrey S. Leib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterogeneous metal line compositions for advanced integrated circu...
- Patent number 11,955,534
- Issue date Apr 9, 2024
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor storage device
- Patent number 11,955,372
- Issue date Apr 9, 2024
- Kioxia Corporation
- Takehiro Nakai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET circuit devices with well isolation
- Patent number 11,948,829
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Chuan Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench contact structures for advanced integrated circuit structure...
- Patent number 11,948,997
- Issue date Apr 2, 2024
- Intel Corporation
- Subhash M. Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and data storage system including the same
- Patent number 11,943,926
- Issue date Mar 26, 2024
- Samsung Electronics Co., Ltd.
- Wonseok Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 11,942,549
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor device having isolation structures...
- Patent number 11,923,235
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Cheng-Ta Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure
- Patent number 11,923,253
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuei-Ming Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,901,424
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Cheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin patterning for advanced integrated circuit structure fabrication
- Patent number 11,881,520
- Issue date Jan 23, 2024
- Intel Corporation
- Curtis Ward
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and semiconductor wafer
- Patent number 11,876,055
- Issue date Jan 16, 2024
- Lapis Semiconductor Co., Ltd.
- Kenichi Furuta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate dielectric preserving gate cut process
- Patent number 11,876,013
- Issue date Jan 16, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shu-Yuan Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming semiconductor isolation structure and semiconduct...
- Patent number 11,869,802
- Issue date Jan 9, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Wei Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
BCD device layout area defined by a deep trench isolation structure...
- Patent number 11,855,071
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Tsung-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor arrangement and method for manufacturing the same
- Patent number 11,842,931
- Issue date Dec 12, 2023
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolator
- Patent number 11,817,346
- Issue date Nov 14, 2023
- Kabushiki Kaisha Toshiba
- Akira Ishiguro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple thickness semiconductor-on-insulator field effect transist...
- Patent number 11,817,345
- Issue date Nov 14, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Gulbagh Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single diffusion cut for gate structures
- Patent number 11,810,812
- Issue date Nov 7, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor arrangements and methods for manufacturing the same
- Patent number 11,810,823
- Issue date Nov 7, 2023
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate cut and fin trim isolation for advanced integrated circuit str...
- Patent number 11,799,015
- Issue date Oct 24, 2023
- Intel Corporation
- Tahir Ghani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of semiconductor devi...
- Patent number 11,791,210
- Issue date Oct 17, 2023
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Takushi Shigetoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of a vertical fin field effect transistor with reduced...
- Patent number 11,784,095
- Issue date Oct 10, 2023
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with fins
- Patent number 11,742,414
- Issue date Aug 29, 2023
- Semiconductor Manufacturing International (Shanghai) Corporation
- Fei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Through via electrode and device isolation structure including oxid...
- Patent number 11,735,498
- Issue date Aug 22, 2023
- Samsung Electronics Co., Ltd.
- Kwangwuk Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation with multi-step structure
- Patent number 11,728,206
- Issue date Aug 15, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ta-Chun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seal method to integrate non-volatile memory (NVM) into logic or bi...
- Patent number 11,711,917
- Issue date Jul 25, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Bo Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of fabricating the same
- Patent number 11,699,613
- Issue date Jul 11, 2023
- Samsung Electronics Co., Ltd.
- Sunguk Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming fin field-effect transistors
- Patent number 11,670,552
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ryan Chia-Jen Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240136418
- Publication date Apr 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Cheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench FET Device and Method of Manufacturing Trench FET Device
- Publication number 20240113186
- Publication date Apr 4, 2024
- Huawei Technologies Co., Ltd
- Mo huai Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BCD DEVICE LAYOUT AREA DEFINED BY A DEEP TRENCH ISOLATION STRUCTURE...
- Publication number 20240088125
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Tsung-Yu YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240071829
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Wei WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...
- Publication number 20240047556
- Publication date Feb 8, 2024
- Intel Corporation
- Andrew W. YEOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE DIFFUSION CUT FOR GATE STRUCTURES
- Publication number 20240030059
- Publication date Jan 25, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Hui ZANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BCD DEVICE LAYOUT AREA DEFINED BY A DEEP TRENCH ISOLATION STRUCTURE...
- Publication number 20240021601
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Tsung-Yu YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE PHOTON AVALANCHE DIODE
- Publication number 20240014342
- Publication date Jan 11, 2024
- STMicroelectronics (Research and Development) Limited
- Sara PELLEGRINI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STR...
- Publication number 20230420545
- Publication date Dec 28, 2023
- Intel Corporation
- Tahir GHANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20230402454
- Publication date Dec 14, 2023
- Samsung Electronics Co., Ltd.
- Dongjin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE CAVITY MERGING FOR ISOLATION REGIONS IN A MEMORY DIE
- Publication number 20230395422
- Publication date Dec 7, 2023
- Micron Technology, Inc.
- Yoshiaki Fukuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDISTRIBUTION LAYER METALLIC STRUCTURE AND METHOD
- Publication number 20230377968
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Haklay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230369135
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Wei WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION WITH MULTI-STEP STRUCTURE
- Publication number 20230360961
- Publication date Nov 9, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH BACKSIDE METAL GATE CUT FOR REDUCED COUPLIN...
- Publication number 20230335444
- Publication date Oct 19, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sheng-Tsung WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230326786
- Publication date Oct 12, 2023
- Rohm Co., Ltd.
- Hajime OKUDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FALSE COLLECTORS AND GUARD RINGS FOR SEMICONDUCTOR DEVICES
- Publication number 20230317775
- Publication date Oct 5, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Alexei SADOVNIKOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF A VERTICAL FIN FIELD EFFECT TRANSISTOR WITH REDUCED...
- Publication number 20230282522
- Publication date Sep 7, 2023
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH CONTACT STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE...
- Publication number 20230261089
- Publication date Aug 17, 2023
- Intel Corporation
- Subhash M. JOSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Forming Fin Field-Effect Transistors
- Publication number 20230260843
- Publication date Aug 17, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ryan Chia-Jen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230253241
- Publication date Aug 10, 2023
- Samsung Electronics Co., LTD
- Youncheol JEONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE HAVING FINS
- Publication number 20230223298
- Publication date Jul 13, 2023
- NANYA TECHNOLOGY CORPORATION
- CHEN-TSUNG LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20230209814
- Publication date Jun 29, 2023
- Samsung Electronics Co., Ltd.
- Hyeonok Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION
- Publication number 20230207664
- Publication date Jun 29, 2023
- Intel Corporation
- Michael L. HATTENDORF
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE HAVING A FIN FEATURE
- Publication number 20230197832
- Publication date Jun 22, 2023
- NANYA TECHNOLOGY CORPORATION
- Jhen-Yu TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE
- Publication number 20230187283
- Publication date Jun 15, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuei-Ming CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TESTING STRUCTURE FOR AN INTEGRATED CHIP HAVING A HIGH-VOLTAGE DEVICE
- Publication number 20230170249
- Publication date Jun 1, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...
- Publication number 20230144607
- Publication date May 11, 2023
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230143927
- Publication date May 11, 2023
- UNITED MICROELECTRONICS CORP.
- Chun-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE LINE PLUG STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE...
- Publication number 20230131757
- Publication date Apr 27, 2023
- Intel Corporation
- Byron HO
- H01 - BASIC ELECTRIC ELEMENTS

of trenches having a shape other than rectangular or V-shape

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Fin end plug structures for advanced integrated circuit structure f...

Dual metal gate structure having portions of metal gate layers in c...

Heterogeneous metal line compositions for advanced integrated circu...

Semiconductor storage device

FinFET circuit devices with well isolation

Trench contact structures for advanced integrated circuit structure...

Semiconductor device and data storage system including the same

Semiconductor device and method of manufacture

Method for forming semiconductor device having isolation structures...

Integrated circuit structure

Semiconductor device

Fin patterning for advanced integrated circuit structure fabrication

Semiconductor device and semiconductor wafer

Gate dielectric preserving gate cut process

Method of forming semiconductor isolation structure and semiconduct...

BCD device layout area defined by a deep trench isolation structure...

Semiconductor arrangement and method for manufacturing the same

Isolator

Multiple thickness semiconductor-on-insulator field effect transist...

Single diffusion cut for gate structures

Semiconductor arrangements and methods for manufacturing the same

Gate cut and fin trim isolation for advanced integrated circuit str...

Semiconductor device and manufacturing method of semiconductor devi...

Fabrication of a vertical fin field effect transistor with reduced...

Semiconductor device with fins

Through via electrode and device isolation structure including oxid...

Isolation with multi-step structure

Seal method to integrate non-volatile memory (NVM) into logic or bi...

Semiconductor devices and methods of fabricating the same

Methods for forming fin field-effect transistors

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

Trench FET Device and Method of Manufacturing Trench FET Device

BCD DEVICE LAYOUT AREA DEFINED BY A DEEP TRENCH ISOLATION STRUCTURE...

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...

SINGLE DIFFUSION CUT FOR GATE STRUCTURES

BCD DEVICE LAYOUT AREA DEFINED BY A DEEP TRENCH ISOLATION STRUCTURE...

SINGLE PHOTON AVALANCHE DIODE

GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STR...

SEMICONDUCTOR DEVICES

SELECTIVE CAVITY MERGING FOR ISOLATION REGIONS IN A MEMORY DIE

REDISTRIBUTION LAYER METALLIC STRUCTURE AND METHOD

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

ISOLATION WITH MULTI-STEP STRUCTURE

INTEGRATED CIRCUIT WITH BACKSIDE METAL GATE CUT FOR REDUCED COUPLIN...

SEMICONDUCTOR DEVICE

FALSE COLLECTORS AND GUARD RINGS FOR SEMICONDUCTOR DEVICES

FABRICATION OF A VERTICAL FIN FIELD EFFECT TRANSISTOR WITH REDUCED...

TRENCH CONTACT STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE...

Methods for Forming Fin Field-Effect Transistors

SEMICONDUCTOR DEVICE

METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE HAVING FINS

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

TRENCH ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION

METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE HAVING A FIN FEATURE

INTEGRATED CIRCUIT STRUCTURE

TESTING STRUCTURE FOR AN INTEGRATED CHIP HAVING A HIGH-VOLTAGE DEVICE

CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

GATE LINE PLUG STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE...