on semiconductor bodies comprising elements of the fourth group of the Periodic System

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H01L21/28512

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/28512on semiconductor bodies comprising elements of the fourth group of the Periodic System

Industries

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing a field effect transistor by tilted implant...
- Patent number 12,062,707
- Issue date Aug 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Lun Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including metal-2 dimensional material-semicon...
- Patent number 12,040,360
- Issue date Jul 16, 2024
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with metal cap layer and method for manufac...
- Patent number 12,009,403
- Issue date Jun 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of calculating thickness of graphene layer and method of mea...
- Patent number 11,906,291
- Issue date Feb 20, 2024
- Samsung Electronics Co., Ltd.
- Eunkyu Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ceramic showerheads with conductive electrodes
- Patent number 11,834,744
- Issue date Dec 5, 2023
- Applied Materials, Inc.
- Laksheswar Kalita
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for reducing Schottky barrier height and semiconductor devic...
- Patent number 11,817,481
- Issue date Nov 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Hsiang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal contacts to group IV semiconductors by inserting interfacial...
- Patent number 11,804,533
- Issue date Oct 31, 2023
- ACORN SEMI, LLC
- Walter A. Harrison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistor (VFET) structure with dielectric p...
- Patent number 11,804,540
- Issue date Oct 31, 2023
- Samsung Electronics Co., Ltd.
- Hwi Chan Jun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a source/drain of a semiconductor device having...
- Patent number 11,664,423
- Issue date May 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chao-Shuo Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal contacts to group IV semiconductors by inserting interfacial...
- Patent number 11,610,974
- Issue date Mar 21, 2023
- ACORN SEMI, LLC
- Walter A. Harrison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ceramic showerheads with conductive electrodes
- Patent number 11,591,693
- Issue date Feb 28, 2023
- Applied Materials, Inc.
- Laksheswar Kalita
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Vertical field-effect transistor late gate recess process with impr...
- Patent number 11,575,022
- Issue date Feb 7, 2023
- International Business Machines Corporation
- Wenyu Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistor (VFET) structure with dielectric p...
- Patent number 11,538,924
- Issue date Dec 27, 2022
- Samsung Electronics Co., Ltd.
- Hwi Chan Jun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with protection layer and conductor extendi...
- Patent number 11,522,061
- Issue date Dec 6, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contacts to n-type transistors with X-valley layer over L-valley ch...
- Patent number 11,515,420
- Issue date Nov 29, 2022
- Intel Corporation
- Dax M. Crum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Column IV transistors for PMOS integration
- Patent number 11,508,813
- Issue date Nov 22, 2022
- Daedalus Prime LLC
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reducing Schottky barrier height and semiconductor devic...
- Patent number 11,502,174
- Issue date Nov 15, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hung-Hsiang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with metal cap layer
- Patent number 11,393,912
- Issue date Jul 19, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with high concentration of germanium
- Patent number 11,387,320
- Issue date Jul 12, 2022
- Intel Corporation
- Anand S. Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET and a manufacturing method of a contact thereof
- Patent number 11,374,102
- Issue date Jun 28, 2022
- SHANGHAI HUALI INTEGRATED CIRCUIT MFG. CO., LTD.
- Yongji Mao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET having fluorine-doped gate sidewall spacers
- Patent number 11,355,615
- Issue date Jun 7, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Lun Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including metal-2 dimensional material-semicon...
- Patent number 11,342,414
- Issue date May 24, 2022
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor light-emitting element, method for manufactur...
- Patent number 11,309,688
- Issue date Apr 19, 2022
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Daisuke Ikeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance source-drain contacts using high temperature silicides
- Patent number 11,088,033
- Issue date Aug 10, 2021
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having a repaired dielectric layer
- Patent number 11,088,265
- Issue date Aug 10, 2021
- Semiconductor Manufacturing International (Shanghai) Corporation
- Yong Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet with buried gate contact
- Patent number 11,075,301
- Issue date Jul 27, 2021
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance source-drain contacts using high temperature silicides
- Patent number 11,062,956
- Issue date Jul 13, 2021
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating tantalum nitride barrier layer and semiconduc...
- Patent number 11,043,573
- Issue date Jun 22, 2021
- Taiwan Semiconductor Manufacturing Company Limited
- Chi-Cheng Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field-effect transistor late gate recess process with impr...
- Patent number 10,937,890
- Issue date Mar 2, 2021
- International Business Machines Corporation
- Wenyu Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ceramic showerheads with conductive electrodes
- Patent number 10,920,319
- Issue date Feb 16, 2021
- Applied Materials, Inc.
- Laksheswar Kalita
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
FIELD EFFECT TRANSISTOR WITH SPACERS AND MANUFACTURING METHOD THEREOF
- Publication number 20240355898
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Lun Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF CALCULATING THICKNESS OF GRAPHENE LAYER AND METHOD OF MEA...
- Publication number 20240151522
- Publication date May 9, 2024
- Samsung Electronics Co., Ltd.
- Eunkyu LEE
- G01 - MEASURING TESTING
Information Patent Application
METAL CONTACTS TO GROUP IV SEMICONDUCTORS BY INSERTING INTERFACIAL...
- Publication number 20240030306
- Publication date Jan 25, 2024
- Acorn Semi, LLC
- Walter A. Harrison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEATING DEVICE AND SEMICONDUCTOR PROCESSING APPARATUS
- Publication number 20230230858
- Publication date Jul 20, 2023
- Beijing NAURA Microelectronics Equipment Co., Ltd.
- Xiqiang TIAN
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
CERAMIC SHOWERHEADS WITH CONDUCTIVE ELECTRODES
- Publication number 20230203657
- Publication date Jun 29, 2023
- Applied Materials, Inc.
- Laksheswar Kalita
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METAL CONTACTS TO GROUP IV SEMICONDUCTORS BY INSERTING INTERFACIAL...
- Publication number 20230207657
- Publication date Jun 29, 2023
- Acorn Semi, LLC
- Walter A. Harrison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTOR (VFET) STRUCTURE WITH DIELECTRIC P...
- Publication number 20230103070
- Publication date Mar 30, 2023
- Samsung Electronics Co., Ltd.
- Hwi Chan JUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR REDUCING SCHOTTKY BARRIER HEIGHT AND SEMICONDUCTOR DEVIC...
- Publication number 20220384581
- Publication date Dec 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Hsiang CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN STRUCTURE FOR SEMICONDUCTOR DEVICES
- Publication number 20220367633
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chao-Shuo CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH METAL CAP LAYER AND METHOD FOR MANUFAC...
- Publication number 20220293765
- Publication date Sep 15, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Liang CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICES HAVING SOURCE/DRAIN STRUCTURE CONFIGURED WITH HI...
- Publication number 20220271125
- Publication date Aug 25, 2022
- Intel Corporation
- GLENN A. GLASS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING METAL-2 DIMENSIONAL MATERIAL-SEMICON...
- Publication number 20220262903
- Publication date Aug 18, 2022
- Samsung Electronics Co., Ltd.
- Minhyun LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING FIELD EFFECT TRANSISTOR WITH SPACER STRUCTURE
- Publication number 20220262918
- Publication date Aug 18, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Lun Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN STRUCTURE FOR SEMICONDUCTOR DEVICES
- Publication number 20220059653
- Publication date Feb 24, 2022
- Taian Semiconductor Manufacturing Co., Ltd.
- Chao-Shuo CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF CALCULATING THICKNESS OF GRAPHENE LAYER AND METHOD OF MEA...
- Publication number 20210372786
- Publication date Dec 2, 2021
- Samsung Electronics Co., Ltd.
- Eunkyu LEE
- G01 - MEASURING TESTING
Information Patent Application
FINFET AND A MANUFACTURING METHOD OF A CONTACT THEREOF
- Publication number 20210305383
- Publication date Sep 30, 2021
- Shanghai Huali Integrated Circuit Mfg. Co., Ltd.
- Yongji MAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTOR (VFET) STRUCTURE WITH DIELECTRIC P...
- Publication number 20210242330
- Publication date Aug 5, 2021
- Samsung Electronics Co., Ltd.
- Hwi Chan JUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
- Publication number 20210226030
- Publication date Jul 22, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Lun Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET WITH BURIED GATE CONTACT
- Publication number 20210202749
- Publication date Jul 1, 2021
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CERAMIC SHOWERHEADS WITH CONDUCTIVE ELECTRODES
- Publication number 20210189564
- Publication date Jun 24, 2021
- Applied Materials, Inc.
- Laksheswar Kalita
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
VERTICAL FIELD-EFFECT TRANSISTOR LATE GATE RECESS PROCESS WITH IMPR...
- Publication number 20210151583
- Publication date May 20, 2021
- International Business Machines Corporation
- Wenyu XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL CONTACTS TO GROUP IV SEMICONDUCTORS BY INSERTING INTERFACIAL...
- Publication number 20210119009
- Publication date Apr 22, 2021
- Acorn Semi, LLC
- Walter A. Harrison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH METAL CAP LAYER
- Publication number 20210043747
- Publication date Feb 11, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Liang CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR REDUCING SCHOTTKY BARRIER HEIGHT AND SEMICONDUCTOR DEVIC...
- Publication number 20210036111
- Publication date Feb 4, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hung-Hsiang CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor devices having source/drain structure configured with hi...
- Publication number 20210005712
- Publication date Jan 7, 2021
- Intel Corporation
- GLENN A. GLASS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMPROVED CONTACTS TO N-TYPE TRANSISTORS WITH L-VALLEY CHANNELS
- Publication number 20200411690
- Publication date Dec 31, 2020
- Intel Corporation
- Dax M. Crum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING METAL-2 DIMENSIONAL MATERIAL-SEMICON...
- Publication number 20200388680
- Publication date Dec 10, 2020
- Samsung Electronics Co., Ltd.
- Minhyun LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD-EFFECT TRANSISTOR LATE GATE RECESS PROCESS WITH IMPR...
- Publication number 20200321448
- Publication date Oct 8, 2020
- International Business Machines Corporation
- Wenyu XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CERAMIC SHOWERHEADS WITH CONDUCTIVE ELECTRODES
- Publication number 20200224313
- Publication date Jul 16, 2020
- Applied Materials, Inc.
- Laksheswar Kalita
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
TRANSISTORS WITH HIGH CONCENTRATION OF GERMANIUM
- Publication number 20200144362
- Publication date May 7, 2020
- Intel Corporation
- ANAND S. MURTHY
- H01 - BASIC ELECTRIC ELEMENTS

on semiconductor bodies comprising elements of the fourth group of the Periodic System

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of manufacturing a field effect transistor by tilted implant...

Semiconductor device including metal-2 dimensional material-semicon...

Semiconductor structure with metal cap layer and method for manufac...

Method of calculating thickness of graphene layer and method of mea...

Ceramic showerheads with conductive electrodes

Method for reducing Schottky barrier height and semiconductor devic...

Metal contacts to group IV semiconductors by inserting interfacial...

Vertical field effect transistor (VFET) structure with dielectric p...

Method for forming a source/drain of a semiconductor device having...

Metal contacts to group IV semiconductors by inserting interfacial...

Ceramic showerheads with conductive electrodes

Vertical field-effect transistor late gate recess process with impr...

Vertical field effect transistor (VFET) structure with dielectric p...

Semiconductor structure with protection layer and conductor extendi...

Contacts to n-type transistors with X-valley layer over L-valley ch...

Column IV transistors for PMOS integration

Method for reducing Schottky barrier height and semiconductor devic...

Semiconductor structure with metal cap layer

Transistors with high concentration of germanium

FinFET and a manufacturing method of a contact thereof

FinFET having fluorine-doped gate sidewall spacers

Semiconductor device including metal-2 dimensional material-semicon...

Nitride semiconductor light-emitting element, method for manufactur...

Low resistance source-drain contacts using high temperature silicides

Semiconductor structure having a repaired dielectric layer

Nanosheet with buried gate contact

Low resistance source-drain contacts using high temperature silicides

Method of fabricating tantalum nitride barrier layer and semiconduc...

Vertical field-effect transistor late gate recess process with impr...

Ceramic showerheads with conductive electrodes

Patents Applicationslast 30 patents

FIELD EFFECT TRANSISTOR WITH SPACERS AND MANUFACTURING METHOD THEREOF

METHOD OF CALCULATING THICKNESS OF GRAPHENE LAYER AND METHOD OF MEA...

METAL CONTACTS TO GROUP IV SEMICONDUCTORS BY INSERTING INTERFACIAL...

HEATING DEVICE AND SEMICONDUCTOR PROCESSING APPARATUS

CERAMIC SHOWERHEADS WITH CONDUCTIVE ELECTRODES

METAL CONTACTS TO GROUP IV SEMICONDUCTORS BY INSERTING INTERFACIAL...

VERTICAL FIELD EFFECT TRANSISTOR (VFET) STRUCTURE WITH DIELECTRIC P...

METHOD FOR REDUCING SCHOTTKY BARRIER HEIGHT AND SEMICONDUCTOR DEVIC...

SOURCE/DRAIN STRUCTURE FOR SEMICONDUCTOR DEVICES

SEMICONDUCTOR STRUCTURE WITH METAL CAP LAYER AND METHOD FOR MANUFAC...

TRANSISTOR DEVICES HAVING SOURCE/DRAIN STRUCTURE CONFIGURED WITH HI...

SEMICONDUCTOR DEVICE INCLUDING METAL-2 DIMENSIONAL MATERIAL-SEMICON...

METHOD OF MANUFACTURING FIELD EFFECT TRANSISTOR WITH SPACER STRUCTURE

SOURCE/DRAIN STRUCTURE FOR SEMICONDUCTOR DEVICES

METHOD OF CALCULATING THICKNESS OF GRAPHENE LAYER AND METHOD OF MEA...

FINFET AND A MANUFACTURING METHOD OF A CONTACT THEREOF

VERTICAL FIELD EFFECT TRANSISTOR (VFET) STRUCTURE WITH DIELECTRIC P...

FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

NANOSHEET WITH BURIED GATE CONTACT

CERAMIC SHOWERHEADS WITH CONDUCTIVE ELECTRODES

VERTICAL FIELD-EFFECT TRANSISTOR LATE GATE RECESS PROCESS WITH IMPR...

METAL CONTACTS TO GROUP IV SEMICONDUCTORS BY INSERTING INTERFACIAL...

SEMICONDUCTOR STRUCTURE WITH METAL CAP LAYER

METHOD FOR REDUCING SCHOTTKY BARRIER HEIGHT AND SEMICONDUCTOR DEVIC...

Transistor devices having source/drain structure configured with hi...

IMPROVED CONTACTS TO N-TYPE TRANSISTORS WITH L-VALLEY CHANNELS

SEMICONDUCTOR DEVICE INCLUDING METAL-2 DIMENSIONAL MATERIAL-SEMICON...

VERTICAL FIELD-EFFECT TRANSISTOR LATE GATE RECESS PROCESS WITH IMPR...

CERAMIC SHOWERHEADS WITH CONDUCTIVE ELECTRODES

TRANSISTORS WITH HIGH CONCENTRATION OF GERMANIUM