only by use of asymmetry of the magnetic film pair itself, i.e. so-called pseudospin valve [PSV] structure

Industry

CPC
H01F10/3281

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Parent Industries

HELECTRICITY H01Electric elements H01FMAGNETS INDUCTANCES TRANSFORMERS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES H01F10/00Thin magnetic films

Current Industry

H01F10/3281only by use of asymmetry of the magnetic film pair itself, i.e. so-called pseudospin valve [PSV] structure

Industries

Patents Grantslast 30 patents

Information Patent Grant
Spin-orbit-torque magnetization rotational element and spin-orbit-t...
- Patent number 11,387,407
- Issue date Jul 12, 2022
- TDK Corporation
- Tomoyuki Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Narrow etched gaps or features in multi-period thin-film structures
- Patent number 11,222,676
- Issue date Jan 11, 2022
- Integrated Magnetoelectronics Corp
- Edward Wuori
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-orbit torque magnetoresistance effect element and magnetic memory
- Patent number 11,211,552
- Issue date Dec 28, 2021
- TDK Corporation
- Yohei Shiokawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin-orbit torque magnetoresistive random access memory with magnet...
- Patent number 11,069,390
- Issue date Jul 20, 2021
- Wisconsin Alumni Research Foundation
- Jiamian Hu
- G11 - INFORMATION STORAGE
Information Patent Grant
Narrow etched gaps or features in multi-period thin-film structures
- Patent number 10,762,940
- Issue date Sep 1, 2020
- Integrated Magnetoelectronics Corporation
- Edward Wuori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Data writing method, inspection method, spin device manufacturing m...
- Patent number 10,490,249
- Issue date Nov 26, 2019
- TDK Corporation
- Tomoyuki Sasaki
- G11 - INFORMATION STORAGE
Information Patent Grant
3D spinram
- Patent number 10,170,171
- Issue date Jan 1, 2019
- Integrated Magnetoelectronics Corporation
- Edward Wuori
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin oscillator device
- Patent number 9,543,894
- Issue date Jan 10, 2017
- Johan Akerman
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Spin valves using organic spacers and spin-organic light-emitting s...
- Patent number 9,219,226
- Issue date Dec 22, 2015
- The University of Utah Research Foundation
- Jing Shi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Tunnel barrier sensor with multilayer structure
- Patent number 8,929,035
- Issue date Jan 6, 2015
- Kabushiki Kaisha Toshiba
- Hideaki Fukuzawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistance device including layered ferromagnetic structure,...
- Patent number 8,865,326
- Issue date Oct 21, 2014
- NEC Corporation
- Yoshiyuki Fukumoto
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of manufacturing a CPP structure with enhanced GMR ratio
- Patent number 8,484,830
- Issue date Jul 16, 2013
- Headway Technologies, Inc.
- Kunliang Zhang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magneto-resistance effect element including diffusive electron scat...
- Patent number 8,305,716
- Issue date Nov 6, 2012
- Kabushiki Kaisha Toshiba
- Hideaki Fukuzawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
CPP structure with enhanced GMR ratio
- Patent number 8,289,661
- Issue date Oct 16, 2012
- Headway Technologies, Inc.
- Kunliang Zhang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic field detecting element having a tunnel barrier formed on...
- Patent number 8,264,800
- Issue date Sep 11, 2012
- TDK Corporation
- Takumi Uesugi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Process for manufacturing a magnetic tunnel junction (MTJ) device
- Patent number 8,176,622
- Issue date May 15, 2012
- MagIC Technologies, Inc.
- Cheng T. Horng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magneto-resistance effect element and magnetic memory
- Patent number 8,134,193
- Issue date Mar 13, 2012
- Kabushiki Kaisha Toshiba
- Tomoaki Inokuchi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magneto-resistance effect element having a diffusive electron scatt...
- Patent number 8,130,477
- Issue date Mar 6, 2012
- Kabushiki Kaisha Toshiba
- Hideaki Fukuzawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Current perpendicular to plane (CPP) magnetic read head
- Patent number 8,064,159
- Issue date Nov 22, 2011
- Hitachi Global Storage Technologies Netherlands B.V.
- Koji Sakamoto
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Tunneling magneto-resistive spin valve sensor with novel composite...
- Patent number 8,035,931
- Issue date Oct 11, 2011
- Headway Technologies, Inc.
- Tong Zhao
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic memory device
- Patent number 8,035,145
- Issue date Oct 11, 2011
- Samsung Electronics Co., Ltd.
- Jun-Soo Bae
- B82 - NANO-TECHNOLOGY
Information Patent Grant
TMR device with surfactant layer on top of CoFexBy/CoFez inner pinn...
- Patent number 7,986,498
- Issue date Jul 26, 2011
- Headway Technologies, Inc.
- Hui-Chuan Wang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magneto-resistance effect element and magnetic memory
- Patent number 7,977,719
- Issue date Jul 12, 2011
- Kabushiki Kaisha Toshiba
- Tomoaki Inokuchi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of manufacturing a CPP structure with enhanced GMR ratio
- Patent number 7,918,014
- Issue date Apr 5, 2011
- Headway Technologies, Inc.
- Kunliang Zhang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistive effect element with resistance adjustment layer of...
- Patent number 7,898,774
- Issue date Mar 1, 2011
- Kabushiki Kaisha Toshiba
- Hiromi Yuasa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for manufacturing magnetoresistance effect element
- Patent number 7,897,201
- Issue date Mar 1, 2011
- Kabushiki Kaisha Toshiba
- Hiromi Yuasa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of forming a high performance tunneling magnetoresistive (TM...
- Patent number 7,861,401
- Issue date Jan 4, 2011
- Headway Technologies, Inc.
- Hui-Chuan Wang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistance effect element, magnetic head, magnetic reproduci...
- Patent number 7,843,669
- Issue date Nov 30, 2010
- Kabushiki Kaisha Toshiba
- Hideaki Fukuzawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magneto-resistance effect element including a damping factor adjust...
- Patent number 7,821,748
- Issue date Oct 26, 2010
- Kabushiki Kaisha Toshiba
- Hideaki Fukuzawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistive effect element, magnetic head and magnetic recordi...
- Patent number 7,808,747
- Issue date Oct 5, 2010
- Kabushiki Kaisha Toshiba
- Yoshihiko Fuji
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
Large Dzyaloshinskii-Moriya Interaction and Perpendicular Magnetic...
- Publication number 20220199310
- Publication date Jun 23, 2022
- GEORGETOWN UNIVERSITY
- Kai Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN-ORBIT TORQUE MAGNETORESISTIVE RANDOM ACCESS MEMORY WITH MAGNET...
- Publication number 20210074344
- Publication date Mar 11, 2021
- Wisconsin Alumni Research Foundation
- Jiamian Hu
- G11 - INFORMATION STORAGE
Information Patent Application
NARROW ETCHED GAPS OR FEATURES IN MULTI-PERIOD THIN-FILM STRUCTURES
- Publication number 20200349992
- Publication date Nov 5, 2020
- INTEGRATED MAGNETOELECTRONICS CORP.
- Edward Wuori
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-ORBIT-TORQUE MAGNETIZATION ROTATIONAL ELEMENT AND SPIN-ORBIT-T...
- Publication number 20200335691
- Publication date Oct 22, 2020
- TDK Corporation
- Tomoyuki SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DATA WRITING METHOD, INSPECTION METHOD, SPIN DEVICE MANUFACTURING M...
- Publication number 20190333560
- Publication date Oct 31, 2019
- TDK Corporation
- Tomoyuki SASAKI
- G11 - INFORMATION STORAGE
Information Patent Application
NARROW ETCHED GAPS OR FEATURES IN MULTI-PERIOD THIN-FILM STRUCTURES
- Publication number 20180166097
- Publication date Jun 14, 2018
- INTEGRATED MAGNETOELECTRONICS CORP.
- Edward Wuori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTANCE DEVICE INCLUDING LAYERED FERROMAGNETIC STRUCTURE,...
- Publication number 20140346625
- Publication date Nov 27, 2014
- NEC Corporation
- Yoshiyuki Fukumoto
- B82 - NANO-TECHNOLOGY
Information Patent Application
SPIN VALVES USING ORGANIC SPACERS AND SPIN-ORGANIC LIGHT-EMITTING S...
- Publication number 20130299786
- Publication date Nov 14, 2013
- The University of Utah
- Jing Shi
- B82 - NANO-TECHNOLOGY
Information Patent Application
FERROMAGNETIC GRAPHENES AND SPIN VALVE DEVICES INCLUDING THE SAME
- Publication number 20120308846
- Publication date Dec 6, 2012
- Samsung Electronics Co., Ltd.
- Sung-Hoon Lee
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETO-RESISTANCE EFFECT ELEMENT, MAGNETO-RESISTANCE EFFECT HEAD,...
- Publication number 20120129008
- Publication date May 24, 2012
- Kabushiki Kaisha Toshiba
- Hideaki Fukuzawa
- G01 - MEASURING TESTING
Information Patent Application
MAGNETO-RESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
- Publication number 20110316104
- Publication date Dec 29, 2011
- Kabushiki Kaisha Toshiba
- Tomoaki Inokuchi
- G11 - INFORMATION STORAGE
Information Patent Application
CPP Structure with enhanced GMR ratio
- Publication number 20110179635
- Publication date Jul 28, 2011
- HEADWAY TECHNOLOGIES, INC.
- Kunliang Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
CPP structure with enhanced GMR ratio
- Publication number 20110183158
- Publication date Jul 28, 2011
- HEADWAY TECHNOLOGIES, INC.
- Kunliang Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETO-RESISTANCE EFFECT ELEMENT, MAGNETO-RESISTANCE EFFECT HEAD,...
- Publication number 20110019312
- Publication date Jan 27, 2011
- Kabushiki Kaisha Toshiba
- Hideaki Fukuzawa
- G01 - MEASURING TESTING
Information Patent Application
MAGNETORESISTANCE DEVICE INCLUDING LAYERED FERROMAGNETIC STRUCTURE,...
- Publication number 20100276771
- Publication date Nov 4, 2010
- NEC Corporation
- Yoshiyuki Fukumoto
- G01 - MEASURING TESTING
Information Patent Application
Tunneling magneto-resistive spin valve sensor with novel composite...
- Publication number 20100247966
- Publication date Sep 30, 2010
- HEADWAY TECHNOLOGIES, INC.
- Tong Zhao
- G01 - MEASURING TESTING
Information Patent Application
MAGNETO-RESISTANCE EFFECT ELEMENT, MAGNETO-RESISTANCE EFFECT HEAD,...
- Publication number 20100226048
- Publication date Sep 9, 2010
- Kabushiki Kaisha Toshiba
- Hideaki Fukuzawa
- G01 - MEASURING TESTING
Information Patent Application
Magnetic Memory Device
- Publication number 20100213558
- Publication date Aug 26, 2010
- SAMSUNG ELECTRONICS CO., LTD.
- Jun-Soo Bae
- G11 - INFORMATION STORAGE
Information Patent Application
CURRENT PERPENDICULAR TO PLANE (CPP) MAGNETIC READ HEAD
- Publication number 20100157465
- Publication date Jun 24, 2010
- Koji Sakamoto
- G01 - MEASURING TESTING
Information Patent Application
Hafnium doped cap and free layer for mram device
- Publication number 20100136713
- Publication date Jun 3, 2010
- MaglC Technologies, Inc.
- Cheng T. Horng
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETO-RESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
- Publication number 20100091556
- Publication date Apr 15, 2010
- Kabushiki Kaisha Toshiba
- Tomoaki Inokuchi
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, MAGNETIC REPRODUCI...
- Publication number 20090225477
- Publication date Sep 10, 2009
- Kabushiki Kaisha Toshiba
- Hideaki Fukuzawa
- G01 - MEASURING TESTING
Information Patent Application
TMR device with surfactant layer on top of CoFexBy/CoFez inner pinn...
- Publication number 20090165288
- Publication date Jul 2, 2009
- HEADWAY TECHNOLOGIES, INC.
- Hui-Chuan Wang
- G11 - INFORMATION STORAGE
Information Patent Application
TMR device with surfactant layer on top of cofexby/cofez inner pinn...
- Publication number 20090161266
- Publication date Jun 25, 2009
- Hui-Chuan Wang
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, MAGNETIC REPRODUCI...
- Publication number 20090141408
- Publication date Jun 4, 2009
- Kabushiki Kaisha Toshiba
- Hideaki Fukuzawa
- G01 - MEASURING TESTING
Information Patent Application
Mg-Zn Oxide Tunnel Barriers and Method of Formation
- Publication number 20080138660
- Publication date Jun 12, 2008
- International Business Machines Corporation
- Stuart Stephen Papworth Parkin
- G01 - MEASURING TESTING
Information Patent Application
Hafnium doped cap and free layer for MRAM device
- Publication number 20080088986
- Publication date Apr 17, 2008
- MagIC Technologies, Inc.
- Cheng T. Horng
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, MAGNETIC REPRODUCI...
- Publication number 20080068764
- Publication date Mar 20, 2008
- Kabushiki Kaisha Toshiba
- Hideaki Fukuzawa
- G01 - MEASURING TESTING
Information Patent Application
Magnetoresistive effect element, magnetic head and magnetic reprodu...
- Publication number 20080068765
- Publication date Mar 20, 2008
- Kabushiki Kaisha Toshiba
- Hiromi Yuasa
- G01 - MEASURING TESTING
Information Patent Application
Tunnel magnetoresistive element and manufacturing method thereof
- Publication number 20080062582
- Publication date Mar 13, 2008
- FUJITSU LIMITED
- Kojiro Komagaki
- G01 - MEASURING TESTING

only by use of asymmetry of the magnetic film pair itself, i.e. so-called pseudospin valve [PSV] structure

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Spin-orbit-torque magnetization rotational element and spin-orbit-t...

Narrow etched gaps or features in multi-period thin-film structures

Spin-orbit torque magnetoresistance effect element and magnetic memory

Spin-orbit torque magnetoresistive random access memory with magnet...

Narrow etched gaps or features in multi-period thin-film structures

Data writing method, inspection method, spin device manufacturing m...

3D spinram

Spin oscillator device

Spin valves using organic spacers and spin-organic light-emitting s...

Tunnel barrier sensor with multilayer structure

Magnetoresistance device including layered ferromagnetic structure,...

Method of manufacturing a CPP structure with enhanced GMR ratio

Magneto-resistance effect element including diffusive electron scat...

CPP structure with enhanced GMR ratio

Magnetic field detecting element having a tunnel barrier formed on...

Process for manufacturing a magnetic tunnel junction (MTJ) device

Magneto-resistance effect element and magnetic memory

Magneto-resistance effect element having a diffusive electron scatt...

Current perpendicular to plane (CPP) magnetic read head

Tunneling magneto-resistive spin valve sensor with novel composite...

Magnetic memory device

TMR device with surfactant layer on top of CoFexBy/CoFez inner pinn...

Magneto-resistance effect element and magnetic memory

Method of manufacturing a CPP structure with enhanced GMR ratio

Magnetoresistive effect element with resistance adjustment layer of...

Method for manufacturing magnetoresistance effect element

Method of forming a high performance tunneling magnetoresistive (TM...

Magnetoresistance effect element, magnetic head, magnetic reproduci...

Magneto-resistance effect element including a damping factor adjust...

Magnetoresistive effect element, magnetic head and magnetic recordi...

Patents Applicationslast 30 patents

Large Dzyaloshinskii-Moriya Interaction and Perpendicular Magnetic...

SPIN-ORBIT TORQUE MAGNETORESISTIVE RANDOM ACCESS MEMORY WITH MAGNET...

NARROW ETCHED GAPS OR FEATURES IN MULTI-PERIOD THIN-FILM STRUCTURES

SPIN-ORBIT-TORQUE MAGNETIZATION ROTATIONAL ELEMENT AND SPIN-ORBIT-T...

DATA WRITING METHOD, INSPECTION METHOD, SPIN DEVICE MANUFACTURING M...

NARROW ETCHED GAPS OR FEATURES IN MULTI-PERIOD THIN-FILM STRUCTURES

MAGNETORESISTANCE DEVICE INCLUDING LAYERED FERROMAGNETIC STRUCTURE,...

SPIN VALVES USING ORGANIC SPACERS AND SPIN-ORGANIC LIGHT-EMITTING S...

FERROMAGNETIC GRAPHENES AND SPIN VALVE DEVICES INCLUDING THE SAME

MAGNETO-RESISTANCE EFFECT ELEMENT, MAGNETO-RESISTANCE EFFECT HEAD,...

MAGNETO-RESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY

CPP Structure with enhanced GMR ratio

CPP structure with enhanced GMR ratio

MAGNETO-RESISTANCE EFFECT ELEMENT, MAGNETO-RESISTANCE EFFECT HEAD,...

MAGNETORESISTANCE DEVICE INCLUDING LAYERED FERROMAGNETIC STRUCTURE,...

Tunneling magneto-resistive spin valve sensor with novel composite...

MAGNETO-RESISTANCE EFFECT ELEMENT, MAGNETO-RESISTANCE EFFECT HEAD,...

Magnetic Memory Device

CURRENT PERPENDICULAR TO PLANE (CPP) MAGNETIC READ HEAD

Hafnium doped cap and free layer for mram device

MAGNETO-RESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, MAGNETIC REPRODUCI...

TMR device with surfactant layer on top of CoFexBy/CoFez inner pinn...

TMR device with surfactant layer on top of cofexby/cofez inner pinn...

MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, MAGNETIC REPRODUCI...

Mg-Zn Oxide Tunnel Barriers and Method of Formation

Hafnium doped cap and free layer for MRAM device

MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, MAGNETIC REPRODUCI...

Magnetoresistive effect element, magnetic head and magnetic reprodu...

Tunnel magnetoresistive element and manufacturing method thereof