passivation or protection of the electrode

Industry

CPC
H01L21/28247

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/28247passivation or protection of the electrode

Industries

Patents Grantslast 30 patents

Information Patent Grant
Dual metal silicide structures for advanced integrated circuit stru...
- Patent number 11,961,767
- Issue date Apr 16, 2024
- Intel Corporation
- Jeffrey S. Leib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal gate structure having portions of metal gate layers in c...
- Patent number 11,955,532
- Issue date Apr 9, 2024
- Intel Corporation
- Jeffrey S. Leib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterogeneous metal line compositions for advanced integrated circu...
- Patent number 11,955,534
- Issue date Apr 9, 2024
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench contact structures for advanced integrated circuit structure...
- Patent number 11,948,997
- Issue date Apr 2, 2024
- Intel Corporation
- Subhash M. Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor structure and semiconductor...
- Patent number 11,935,925
- Issue date Mar 19, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Gongyi Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for inhibiting line bending during conductive material depo...
- Patent number 11,935,782
- Issue date Mar 19, 2024
- Micron Technology, Inc.
- Gurtej S. Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-protective layer formed on high-K dielectric layer
- Patent number 11,923,201
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ju-Li Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench plug hardmask for advanced integrated circuit structure fabr...
- Patent number 11,887,838
- Issue date Jan 30, 2024
- Intel Corporation
- Anthony St. Amour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin patterning for advanced integrated circuit structure fabrication
- Patent number 11,881,520
- Issue date Jan 23, 2024
- Intel Corporation
- Curtis Ward
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon structure including protective layer
- Patent number 11,855,086
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Shao Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a passivation layer and method for produc...
- Patent number 11,854,926
- Issue date Dec 26, 2023
- Infineon Technologies AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Continuous gate and fin spacer for advanced integrated circuit stru...
- Patent number 11,837,456
- Issue date Dec 5, 2023
- Intel Corporation
- Heidi M. Meyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Image sensor comprising polysilicon gate electrode and nitride hard...
- Patent number 11,837,622
- Issue date Dec 5, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Wei Chia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate cut and fin trim isolation for advanced integrated circuit str...
- Patent number 11,799,015
- Issue date Oct 24, 2023
- Intel Corporation
- Tahir Ghani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 11,769,690
- Issue date Sep 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jia-Chuan You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a semiconductor device with a gate structure hav...
- Patent number 11,749,753
- Issue date Sep 5, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Chun-Neng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a metal gate transistor with a stacked doubl...
- Patent number 11,742,412
- Issue date Aug 29, 2023
- United Microelectronics Corp.
- Te-Chang Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 11,735,426
- Issue date Aug 22, 2023
- TAIWAN SEMICONDUCTOR MANUFACTURING
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,728,372
- Issue date Aug 15, 2023
- Samsung Electronics Co., Ltd.
- Han Jin Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin Field-Effect Transistor device and method of forming the same
- Patent number 11,728,215
- Issue date Aug 15, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shich-Chang Suen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench contact structures for advanced integrated circuit structure...
- Patent number 11,664,439
- Issue date May 30, 2023
- Intel Corporation
- Subhash M. Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin cut and fin trim isolation for advanced integrated circuit stru...
- Patent number 11,646,359
- Issue date May 9, 2023
- Intel Corporation
- Tahir Ghani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench isolation for advanced integrated circuit structure fabrication
- Patent number 11,640,985
- Issue date May 2, 2023
- Intel Corporation
- Michael L. Hattendorf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming memory device
- Patent number 11,637,017
- Issue date Apr 25, 2023
- Powerchip Semiconductor Manufacturing Corporation
- Wen Chung Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure
- Patent number 11,626,493
- Issue date Apr 11, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsueh-Wen Tsau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact over active gate structures for advanced integrated circuit...
- Patent number 11,581,420
- Issue date Feb 14, 2023
- Intel Corporation
- Andrew W. Veoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterogeneous metal line compositions for advanced integrated circu...
- Patent number 11,581,419
- Issue date Feb 14, 2023
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a capping pattern on a gate electrode
- Patent number 11,557,656
- Issue date Jan 17, 2023
- Samsung Electronics Co., Ltd.
- Jonghan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective gate spacers for semiconductor devices
- Patent number 11,532,724
- Issue date Dec 20, 2022
- Intel Corporation
- Scott B. Clendenning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with gate stack
- Patent number 11,515,422
- Issue date Nov 29, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRENCH PLUG HARDMASK FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABR...
- Publication number 20240105520
- Publication date Mar 28, 2024
- Intel Corporation
- Anthony ST. AMOUR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING POLYSILICON STRUCTURE INCLUDING PROTECTIVE LAYER
- Publication number 20240096884
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Shao CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...
- Publication number 20240047556
- Publication date Feb 8, 2024
- Intel Corporation
- Andrew W. YEOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTINUOUS GATE AND FIN SPACER FOR ADVANCED INTEGRATED CIRCUIT STRU...
- Publication number 20240038578
- Publication date Feb 1, 2024
- Intel Corporation
- Heidi M. MEYER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STR...
- Publication number 20230420545
- Publication date Dec 28, 2023
- Intel Corporation
- Tahir GHANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SURFACE OXIDATION CONTROL OF METAL GATES USING CAPPING LAYER
- Publication number 20230386848
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Pei-Yu Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME
- Publication number 20230369494
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- CHUN-NENG LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230361161
- Publication date Nov 9, 2023
- Samsung Electronics Co., LTD
- Han Jin Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230352565
- Publication date Nov 2, 2023
- UNITED MICROELECTRONICS CORP.
- Te-Chang Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF
- Publication number 20230275130
- Publication date Aug 31, 2023
- Changxin Memory Technologies, Inc.
- SEMYEONG JANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH CONTACT STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE...
- Publication number 20230261089
- Publication date Aug 17, 2023
- Intel Corporation
- Subhash M. JOSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE
- Publication number 20230246080
- Publication date Aug 3, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsueh-Wen TSAU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND DEVICE INCLUDING METAL CARBON NITRIDE LAYER AND METHO...
- Publication number 20230238243
- Publication date Jul 27, 2023
- ASM IP HOLDING B.V.
- Mojtaba Samiee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION
- Publication number 20230207664
- Publication date Jun 29, 2023
- Intel Corporation
- Michael L. HATTENDORF
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...
- Publication number 20230144607
- Publication date May 11, 2023
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE LINE PLUG STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE...
- Publication number 20230131757
- Publication date Apr 27, 2023
- Intel Corporation
- Byron HO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN PATTERNING FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION
- Publication number 20230126174
- Publication date Apr 27, 2023
- Intel Corporation
- Curtis WARD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...
- Publication number 20230101723
- Publication date Mar 30, 2023
- Intel Corporation
- Andrew W. YEOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal Gate Structure of High-Voltage Device and Method for Making t...
- Publication number 20230069801
- Publication date Mar 2, 2023
- Shanghai Huali Integrated Circuit Corporation
- Yu Xia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL METAL SILICIDE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRU...
- Publication number 20230042218
- Publication date Feb 9, 2023
- Intel Corporation
- Jeffrey S. LEIB
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH NANOSHEET TRANSISTORS WITH METAL GATE PASSI...
- Publication number 20230029370
- Publication date Jan 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Mao-Lin HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOFT ASHING PROCESS FOR FORMING PROTECTIVE LAYER ON CONDUCTIVE CAP...
- Publication number 20230014509
- Publication date Jan 19, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guan-Xuan CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTINUOUS GATE AND FIN SPACER FOR ADVANCED INTEGRATED CIRCUIT STRU...
- Publication number 20220406650
- Publication date Dec 22, 2022
- Intel Corporation
- Heidi M. MEYER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMAGE SENSOR
- Publication number 20220384514
- Publication date Dec 1, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Wei CHIA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH PLUG HARDMASK FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABR...
- Publication number 20220367283
- Publication date Nov 17, 2022
- Intel Corporation
- Anthony ST. AMOUR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME
- Publication number 20220359743
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Neng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL SOURCE OR DRAIN STRUCTURES FOR ADVANCED INTEGRATED CIRCUI...
- Publication number 20220344494
- Publication date Oct 27, 2022
- Intel Corporation
- Subhash JOSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLUGS FOR INTERCONNECT LINES FOR ADVANCED INTEGRATED CIRCUIT STRUCT...
- Publication number 20220336633
- Publication date Oct 20, 2022
- Intel Corporation
- Andrew W. YEOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20220293459
- Publication date Sep 15, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jia-Chuan YOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENABLING ANNEAL FOR RELIABILITY IMPROVEMENT AND MULTI-VT WITH INTER...
- Publication number 20220238682
- Publication date Jul 28, 2022
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS

passivation or protection of the electrode

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Dual metal silicide structures for advanced integrated circuit stru...

Dual metal gate structure having portions of metal gate layers in c...

Heterogeneous metal line compositions for advanced integrated circu...

Trench contact structures for advanced integrated circuit structure...

Method for manufacturing semiconductor structure and semiconductor...

Methods for inhibiting line bending during conductive material depo...

Self-protective layer formed on high-K dielectric layer

Trench plug hardmask for advanced integrated circuit structure fabr...

Fin patterning for advanced integrated circuit structure fabrication

Polysilicon structure including protective layer

Semiconductor device with a passivation layer and method for produc...

Continuous gate and fin spacer for advanced integrated circuit stru...

Image sensor comprising polysilicon gate electrode and nitride hard...

Gate cut and fin trim isolation for advanced integrated circuit str...

Semiconductor device and method of fabricating the same

Methods of forming a semiconductor device with a gate structure hav...

Method for fabricating a metal gate transistor with a stacked doubl...

Semiconductor device and method of manufacture

Semiconductor device

Fin Field-Effect Transistor device and method of forming the same

Trench contact structures for advanced integrated circuit structure...

Fin cut and fin trim isolation for advanced integrated circuit stru...

Trench isolation for advanced integrated circuit structure fabrication

Method of forming memory device

Semiconductor device structure

Contact over active gate structures for advanced integrated circuit...

Heterogeneous metal line compositions for advanced integrated circu...

Semiconductor device having a capping pattern on a gate electrode

Selective gate spacers for semiconductor devices

Semiconductor device with gate stack

Patents Applicationslast 30 patents

TRENCH PLUG HARDMASK FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABR...

METHOD OF MAKING POLYSILICON STRUCTURE INCLUDING PROTECTIVE LAYER

HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...

CONTINUOUS GATE AND FIN SPACER FOR ADVANCED INTEGRATED CIRCUIT STRU...

GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STR...

SURFACE OXIDATION CONTROL OF METAL GATES USING CAPPING LAYER

FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF

TRENCH CONTACT STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE...

SEMICONDUCTOR DEVICE STRUCTURE

STRUCTURE AND DEVICE INCLUDING METAL CARBON NITRIDE LAYER AND METHO...

TRENCH ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION

CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...

GATE LINE PLUG STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE...

FIN PATTERNING FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION

HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...

Metal Gate Structure of High-Voltage Device and Method for Making t...

DUAL METAL SILICIDE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRU...

INTEGRATED CIRCUIT WITH NANOSHEET TRANSISTORS WITH METAL GATE PASSI...

SOFT ASHING PROCESS FOR FORMING PROTECTIVE LAYER ON CONDUCTIVE CAP...

CONTINUOUS GATE AND FIN SPACER FOR ADVANCED INTEGRATED CIRCUIT STRU...

IMAGE SENSOR

TRENCH PLUG HARDMASK FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABR...

FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME

EPITAXIAL SOURCE OR DRAIN STRUCTURES FOR ADVANCED INTEGRATED CIRCUI...

PLUGS FOR INTERCONNECT LINES FOR ADVANCED INTEGRATED CIRCUIT STRUCT...

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

ENABLING ANNEAL FOR RELIABILITY IMPROVEMENT AND MULTI-VT WITH INTER...