Phosphides

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CPC
H01L21/02543

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/02543Phosphides

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor substrate, method for manufacturing semiconductor sub...
- Patent number 12,183,636
- Issue date Dec 31, 2024
- FILNEX INC.
- Mitsuhiko Ogihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,157,956
- Issue date Dec 3, 2024
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor light-emitting element and method of producing the same
- Patent number 12,125,702
- Issue date Oct 22, 2024
- Dowa Electronics Materials Co., Ltd.
- Osamu Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,116,695
- Issue date Oct 15, 2024
- United States of America as represented by Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing a monoocrystalline layer of AlN material by t...
- Patent number 12,071,706
- Issue date Aug 27, 2024
- Soitec
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nanorod production method and nanorod produced thereby
- Patent number 12,074,247
- Issue date Aug 27, 2024
- Samsung Display Co., Ltd.
- Young Rag Do
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Epitaxial structure and transistor including the same
- Patent number 11,955,518
- Issue date Apr 9, 2024
- Xiamen Sanan Integrated Circuit Co., Ltd.
- Chih-Hung Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single crystal semiconductor structure and method of manufacturing...
- Patent number 11,923,195
- Issue date Mar 5, 2024
- Samsung Electronics Co., Ltd.
- Junhee Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate, method for manufacturing semiconductor sub...
- Patent number 11,894,272
- Issue date Feb 6, 2024
- FILNEX INC.
- Mitsuhiko Ogihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial growth on a gallium arsenide phosphide capped material on...
- Patent number 11,881,683
- Issue date Jan 23, 2024
- The Regents of the University of California
- Constance J. Chang-Hasnain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for manufacturing thereof
- Patent number 11,854,909
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Man-Ho Kwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,795,575
- Issue date Oct 24, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,795,574
- Issue date Oct 24, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,788,202
- Issue date Oct 17, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,761,116
- Issue date Sep 19, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,761,115
- Issue date Sep 19, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Source-channel junction for III-V metal-oxide-semiconductor field e...
- Patent number 11,756,998
- Issue date Sep 12, 2023
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate and method of manufacturing thereof
- Patent number 11,749,526
- Issue date Sep 5, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- I-Sheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing III-V compound semiconductor thin films on silic...
- Patent number 11,742,203
- Issue date Aug 29, 2023
- The Hong Kong University of Science and Technology
- Kei May Lau
- G02 - OPTICS
Information Patent Grant
Methods for depositing III-alloys on substrates and compositions th...
- Patent number 11,721,550
- Issue date Aug 8, 2023
- United States Department of Energy
- Emily Lowell Warren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a crystalline metal-phosphide hetero-layer b...
- Patent number 11,674,237
- Issue date Jun 13, 2023
- International Business Machines Corporation
- Yannick Baumgartner
- C30 - CRYSTAL GROWTH
Information Patent Grant
Material having single crystal perovskite, device including the sam...
- Patent number 11,615,955
- Issue date Mar 28, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bo-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,603,603
- Issue date Mar 14, 2023
- United States of Americas as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical-cavity surface-emitting laser fabrication on large wafer
- Patent number 11,588,299
- Issue date Feb 21, 2023
- Mellanox Technologies, Ltd.
- Vladimir Iakovlev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Synthesis and use of precursors for ALD of group VA element contain...
- Patent number 11,542,600
- Issue date Jan 3, 2023
- ASM IP Holding B.V.
- Viljami Pore
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,535,951
- Issue date Dec 27, 2022
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors on heterogeneous bonding layers
- Patent number 11,532,719
- Issue date Dec 20, 2022
- Intel Corporation
- Kimin Jun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned gate edge architecture with alternate channel material
- Patent number 11,456,357
- Issue date Sep 27, 2022
- Intel Corporation
- Biswajeet Guha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized Heteropitaxial growth of semiconductors
- Patent number 11,434,583
- Issue date Sep 6, 2022
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor structure and method for manufacturing thereof
- Patent number 11,430,702
- Issue date Aug 30, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Man-Ho Kwan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STRUCTURE COMPRISING MONOCRYSTALLINE LAYERS OF ALN MATERIAL ON A SU...
- Publication number 20240384432
- Publication date Nov 21, 2024
- SOITEC
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF FABRICATING LEAST DEFECTIVE NON-PLANAR BIPOLAR HETEROSTRU...
- Publication number 20240304703
- Publication date Sep 12, 2024
- University of Southern California
- Ajey Poovannummoottil JACOB
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE CRYSTAL SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING...
- Publication number 20240234135
- Publication date Jul 11, 2024
- Samsung Electronics Co., Ltd.
- Junhee CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LARGE-AREA III-V SEMICONDUCTOR LAYER TRANSFERRING METHOD
- Publication number 20240213085
- Publication date Jun 27, 2024
- ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Ho Sung KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial Structure And Transistor Including The Same
- Publication number 20240204053
- Publication date Jun 20, 2024
- XIAMEN SANAN INTEGRATED CIRCUIT CO., LTD.
- Chih-Hung YEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THEREOF
- Publication number 20240087962
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- MAN-HO KWAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE
- Publication number 20230420553
- Publication date Dec 28, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- En-Shuo LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF GROWING SEMICONDUCTOR NANOWIRES USING A CATALYST ALLOY
- Publication number 20230178369
- Publication date Jun 8, 2023
- Magnus Tarlé BORGSTRÖM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A SEED LAYER, A HETEROSTRUCTURE COMPRISING THE SEED LAYER AND A MET...
- Publication number 20230154747
- Publication date May 18, 2023
- National University of Singapore
- Barbaros OEZYILMAZ
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SYNTHESIS AND USE OF PRECURSORS FOR ALD OF GROUP VA ELEMENT CONTAIN...
- Publication number 20230093384
- Publication date Mar 23, 2023
- ASM IP HOLDING B.V.
- Viljami Pore
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
GROWTH OF SEMICONDUCTOR MATERIALS BY HYDRIDE VAPOR PHASE EPITAXY US...
- Publication number 20230062711
- Publication date Mar 2, 2023
- ALLIANCE FOR SUSTAINABLE ENERGY, LLC
- Wondwosen Tilahun METAFERIA
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230045019
- Publication date Feb 9, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230042736
- Publication date Feb 9, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230038745
- Publication date Feb 9, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230042689
- Publication date Feb 9, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230033788
- Publication date Feb 2, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- G02 - OPTICS
Information Patent Application
SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THEREOF
- Publication number 20220367174
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- I-Sheng CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THEREOF
- Publication number 20220359295
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing company Ltd.
- MAN-HO KWAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-REGIONAL EPITAXIAL GROWTH AND RELATED SYSTEMS AND ARTICLES
- Publication number 20220328311
- Publication date Oct 13, 2022
- Massachusetts Institute of Technology
- Jeehwan Kim
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SINGLE CRYSTAL SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING...
- Publication number 20220285151
- Publication date Sep 8, 2022
- Samsung Electronics Co., Ltd.
- Junhee CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20220267925
- Publication date Aug 25, 2022
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
QPM STRUCTURES BASED ON OPTIMIZED OP-GaAs TEMPLATES WITHOUT MBE ENC...
- Publication number 20220267927
- Publication date Aug 25, 2022
- Government of the United States, as represented by the Secretary of the Air F...
- Shivashankar R. Vangala
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL GROWTH AND TRANSFER VIA PATTERNED TWO-DIMENSIONAL (2D) LA...
- Publication number 20220157661
- Publication date May 19, 2022
- Massachusetts Institute of Technology
- Jeehwan Kim
- C30 - CRYSTAL GROWTH
Information Patent Application
SOURCE-CHANNEL JUNCTION FOR III-V METAL-OXIDE-SEMICONDUCTOR FIELD E...
- Publication number 20220140076
- Publication date May 5, 2022
- Intel Corporation
- Cheng-Ying HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-CHANNEL GATE-ALL-AROUND HIGH-ELECTRON-MOBILITY TRANSISTOR
- Publication number 20220131013
- Publication date Apr 28, 2022
- QUALCOMM Incorporated
- Chenjie TANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR DEPOSITING III-ALLOYS ON SUBSTRATES AND COMPOSITIONS TH...
- Publication number 20220108889
- Publication date Apr 7, 2022
- UNITED STATES DEPARTMENT OF ENERGY
- Emily Lowell Warren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUSES INCLUDING MEMORY CELLS AND RELATED METHODS
- Publication number 20210375925
- Publication date Dec 2, 2021
- Micron Technology, Inc.
- Guangyu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE WITH REDUCED DEFECTS
- Publication number 20210280417
- Publication date Sep 9, 2021
- Microsoft Technology Licensing, LLC
- Geoffrey C. GARDNER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR GROWING III-V COMPOUND SEMICONDUCTORS ON SILICON-ON-INSU...
- Publication number 20210265162
- Publication date Aug 26, 2021
- THE HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Kei May Lau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial Structure And Transistor Including The Same
- Publication number 20210242311
- Publication date Aug 5, 2021
- XIAMEN SANAN INTEGRATED CIRCUIT CO., LTD.
- Chih-Hung YEN
- H01 - BASIC ELECTRIC ELEMENTS

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor substrate, method for manufacturing semiconductor sub...

Optimized heteroepitaxial growth of semiconductors

Semiconductor light-emitting element and method of producing the same

Optimized heteroepitaxial growth of semiconductors

Process for producing a monoocrystalline layer of AlN material by t...

Nanorod production method and nanorod produced thereby

Epitaxial structure and transistor including the same

Single crystal semiconductor structure and method of manufacturing...

Semiconductor substrate, method for manufacturing semiconductor sub...

Epitaxial growth on a gallium arsenide phosphide capped material on...

Semiconductor structure and method for manufacturing thereof

Optimized heteroepitaxial growth of semiconductors

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Optimized heteroepitaxial growth of semiconductors

Optimized heteroepitaxial growth of semiconductors

Source-channel junction for III-V metal-oxide-semiconductor field e...

Semiconductor substrate and method of manufacturing thereof

Method for growing III-V compound semiconductor thin films on silic...

Methods for depositing III-alloys on substrates and compositions th...

Method for fabricating a crystalline metal-phosphide hetero-layer b...

Material having single crystal perovskite, device including the sam...

Optimized heteroepitaxial growth of semiconductors

Vertical-cavity surface-emitting laser fabrication on large wafer

Synthesis and use of precursors for ALD of group VA element contain...

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Transistors on heterogeneous bonding layers

Self-aligned gate edge architecture with alternate channel material

Optimized Heteropitaxial growth of semiconductors

Semiconductor structure and method for manufacturing thereof

Patents Applicationslast 30 patents

STRUCTURE COMPRISING MONOCRYSTALLINE LAYERS OF ALN MATERIAL ON A SU...

METHOD OF FABRICATING LEAST DEFECTIVE NON-PLANAR BIPOLAR HETEROSTRU...

SINGLE CRYSTAL SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING...

LARGE-AREA III-V SEMICONDUCTOR LAYER TRANSFERRING METHOD

Epitaxial Structure And Transistor Including The Same

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THEREOF

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE

METHOD OF GROWING SEMICONDUCTOR NANOWIRES USING A CATALYST ALLOY

A SEED LAYER, A HETEROSTRUCTURE COMPRISING THE SEED LAYER AND A MET...

SYNTHESIS AND USE OF PRECURSORS FOR ALD OF GROUP VA ELEMENT CONTAIN...

GROWTH OF SEMICONDUCTOR MATERIALS BY HYDRIDE VAPOR PHASE EPITAXY US...

Optimized Heteroepitaxial Growth of Semiconductors

Optimized Heteroepitaxial Growth of Semiconductors

Optimized Heteroepitaxial Growth of Semiconductors

Optimized Heteroepitaxial Growth of Semiconductors

Optimized Heteroepitaxial Growth of Semiconductors

SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THEREOF

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THEREOF

MULTI-REGIONAL EPITAXIAL GROWTH AND RELATED SYSTEMS AND ARTICLES

SINGLE CRYSTAL SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING...

Optimized Heteroepitaxial Growth of Semiconductors

QPM STRUCTURES BASED ON OPTIMIZED OP-GaAs TEMPLATES WITHOUT MBE ENC...

EPITAXIAL GROWTH AND TRANSFER VIA PATTERNED TWO-DIMENSIONAL (2D) LA...

SOURCE-CHANNEL JUNCTION FOR III-V METAL-OXIDE-SEMICONDUCTOR FIELD E...

MULTI-CHANNEL GATE-ALL-AROUND HIGH-ELECTRON-MOBILITY TRANSISTOR

METHODS FOR DEPOSITING III-ALLOYS ON SUBSTRATES AND COMPOSITIONS TH...

APPARATUSES INCLUDING MEMORY CELLS AND RELATED METHODS

NANOWIRE WITH REDUCED DEFECTS

METHOD FOR GROWING III-V COMPOUND SEMICONDUCTORS ON SILICON-ON-INSU...

Epitaxial Structure And Transistor Including The Same