plane dependent doping

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H01S5/3077

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HELECTRICITY H01Electric elements H01SDEVICES USING STIMULATED EMISSION H01S5/00Semiconductor lasers

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H01S5/3077plane dependent doping

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor layer stack and method for producing same
- Patent number 11,870,220
- Issue date Jan 9, 2024
- Otto-von-Guericke Universitaet Magdeburg
- Armin Dadgar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor optical element, semiconductor optical element formin...
- Patent number 11,799,270
- Issue date Oct 24, 2023
- Fujikura Ltd.
- Rintaro Morohashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiGeSn laser diodes and method of fabricating same
- Patent number 11,757,257
- Issue date Sep 12, 2023
- Board of Trustees of the University of Arkansas
- Shui-Qing Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor layer stack and method for producing same
- Patent number 11,424,596
- Issue date Aug 23, 2022
- Otto-von-Guericke Universitaet Magdeburg
- Armin Dadgar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor optical element, semiconductor optical element formin...
- Patent number 11,387,628
- Issue date Jul 12, 2022
- Fujikura Ltd.
- Rintaro Morohashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Modulation doped semiconductor laser and manufacturing method therefor
- Patent number 11,196,232
- Issue date Dec 7, 2021
- Lumentum Japan, Inc.
- Takayuki Nakajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface-emitting laser device and light emitting device including t...
- Patent number 11,183,813
- Issue date Nov 23, 2021
- SUZHOU LEKIN SEMICONDUCTOR CO., LTD.
- Ho Jae Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting element
- Patent number 11,070,028
- Issue date Jul 20, 2021
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Toru Takayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical cavity surface emitting laser
- Patent number 10,998,696
- Issue date May 4, 2021
- Sumitomo Electric Industries, Ltd.
- Natsumi Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device, light-emitting semiconductor c...
- Patent number 10,673,207
- Issue date Jun 2, 2020
- Osram Opto Semiconductors GmbH
- Armin Dadgar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally tailoring current injection for laser diodes
- Patent number 10,547,159
- Issue date Jan 28, 2020
- Trumpf Photonics Inc.
- Carlo Holly
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device and production method thereof
- Patent number 8,981,340
- Issue date Mar 17, 2015
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Yasutoshi Kawaguchi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
High-temperature interband cascade lasers
- Patent number 8,493,654
- Issue date Jul 23, 2013
- The United States of America, as represented by the Secretary of the Navy
- Igor Vurgaftman
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Asymmetric DBR pairs combined with periodic and modulation doping t...
- Patent number 8,481,350
- Issue date Jul 9, 2013
- Finisar Corporation
- Ralph H. Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light-emitting device
- Patent number 8,320,421
- Issue date Nov 27, 2012
- Sony Corporation
- Sachio Karino
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Asymmetric DBR pairs combined with periodic and modulation doping t...
- Patent number 8,213,474
- Issue date Jul 3, 2012
- Finisar Corporation
- Ralph H. Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Waveguide device having delta doped active region
- Patent number 8,165,180
- Issue date Apr 24, 2012
- Agere Systems, INC
- Joseph Michael Freund
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-temperature interband cascade lasers
- Patent number 8,125,706
- Issue date Feb 28, 2012
- The United States of America as represented by the Secretary of the Navy
- Igor Vurgaftman
- B82 - NANO-TECHNOLOGY
Information Patent Grant
VCSEL optimized for high speed data
- Patent number 8,031,752
- Issue date Oct 4, 2011
- Finisar Corporation
- Ralph H. Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor layer structure with superlattice
- Patent number 7,822,089
- Issue date Oct 26, 2010
- Osram Opto Semiconductors GmbH
- Christoph Eichler
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Vertical-cavity surface-emitting laser, module, optical transmissio...
- Patent number 7,751,459
- Issue date Jul 6, 2010
- Fuji Xerox Co., Ltd.
- Masahiro Yoshikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-power infrared semiconductor diode light emitting device
- Patent number 7,701,991
- Issue date Apr 20, 2010
- SemiNex Corporation
- David M. Bean
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Distributed Bragg Reflector for optoelectronic device
- Patent number 7,596,165
- Issue date Sep 29, 2009
- Finisar Corporation
- Ralph H. Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ridge-type semiconductor laser element fabrication method
- Patent number 7,072,371
- Issue date Jul 4, 2006
- Rohm Co., Ltd.
- Takashi Kimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ridge-type semiconductor laser element
- Patent number 6,847,668
- Issue date Jan 25, 2005
- Rohm, Co., Ltd.
- Takashi Kimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device
- Patent number 6,511,858
- Issue date Jan 28, 2003
- Fujitsu Quantum Devices Limited
- Takayuki Watanabe
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Semiconductor laser with light emitting slant plane and method of m...
- Patent number 5,862,166
- Issue date Jan 19, 1999
- Fujitsu Limited
- Chikashi Anayama
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for forming semiconductor laser emitting light from slant plane
- Patent number 5,814,531
- Issue date Sep 29, 1998
- Fujitsu Limited
- Chikashi Anayama
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Stepped substrate semiconductor laser for emitting light at slant p...
- Patent number 5,799,027
- Issue date Aug 25, 1998
- Fujitsu Limited
- Chikashi Anayama
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device and its manufacture utilizing crystal orientat...
- Patent number 5,783,845
- Issue date Jul 21, 1998
- Fujitsu Limited
- Makoto Kondo
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
RADIATION-EMITTING SEMICONDUCTOR BODY, LASER DIODE AND LIGHT-EMITTI...
- Publication number 20240364082
- Publication date Oct 31, 2024
- ams-OSRAM International GmbH
- Heng WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LAYER STACK AND METHOD FOR PRODUCING SAME
- Publication number 20220368110
- Publication date Nov 17, 2022
- OTTO-VON-GUERICKE-UNIVERSITAET MAGDEBURG
- Armin DADGAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR OPTICAL ELEMENT, SEMICONDUCTOR OPTICAL ELEMENT FORMIN...
- Publication number 20220294188
- Publication date Sep 15, 2022
- FUJIKURA LTD.
- Rintaro Morohashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EDGE EMITTING LASER DEVICE
- Publication number 20220247154
- Publication date Aug 4, 2022
- ABOCOM SYSTEMS, INC.
- CHENG-YI OU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiGeSn LASER DIODES AND METHOD OF FABRICATING SAME
- Publication number 20220102942
- Publication date Mar 31, 2022
- Board of Trustees of the University of Arkansas
- Shui-Qing Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LAYER STACK AND METHOD FOR PRODUCING SAME
- Publication number 20210119419
- Publication date Apr 22, 2021
- OTTO-VON-GUERICKE-UNIVERSITAET MAGDEBURG
- Armin DADGAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MODULATION DOPED SEMICONDUCTOR LASER AND MANUFACTURING METHOD THEREFOR
- Publication number 20210057886
- Publication date Feb 25, 2021
- Lumentum Japan, Inc.
- Takayuki NAKAJIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR OPTICAL ELEMENT, SEMICONDUCTOR OPTICAL ELEMENT FORMIN...
- Publication number 20200403381
- Publication date Dec 24, 2020
- FUJIKURA LTD.
- Rintaro Morohashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL CAVITY SURFACE EMITTING LASER
- Publication number 20200099195
- Publication date Mar 26, 2020
- Sumitomo Electric Industries, Ltd.
- Natsumi KANEKO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LIGHT EMITTING DEVICE
- Publication number 20140231746
- Publication date Aug 21, 2014
- Samsung Electronics Co., Ltd.
- Jae Sung HYUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LASER DIODES INCLUDING SUBSTRATES HAVING SEMIPOLAR SURFACE PLANE OR...
- Publication number 20130322481
- Publication date Dec 5, 2013
- Rajaram Bhat
- B82 - NANO-TECHNOLOGY
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF
- Publication number 20130223463
- Publication date Aug 29, 2013
- PANASONIC CORPORATION
- Yasutoshi KAWAGUCHI
- B82 - NANO-TECHNOLOGY
Information Patent Application
ASYMMETRIC DBR PAIRS COMBINED WITH PERIODIC AND MODULATION DOPING T...
- Publication number 20120270346
- Publication date Oct 25, 2012
- Finisar Corporation
- Ralph H. Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-Temperature Interband Cascade Lasers
- Publication number 20120127564
- Publication date May 24, 2012
- The Government of the United of America, as represented by the Secretary of t...
- Igor Vurgaftman
- B82 - NANO-TECHNOLOGY
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF
- Publication number 20110272670
- Publication date Nov 10, 2011
- PANASONIC CORPORATION
- Yasutoshi KAWAGUCHI
- B82 - NANO-TECHNOLOGY
Information Patent Application
SURFACE EMITTING LASER ELEMENT, SURFACE EMITTING LASER ARRAY, OPTIC...
- Publication number 20110176122
- Publication date Jul 21, 2011
- RICOH COMPANY, LTD.
- Morimasa KAMINISHI
- B82 - NANO-TECHNOLOGY
Information Patent Application
ASYMMETRIC DBR PAIRS COMBINED WITH PERIODIC AND MODULATION DOPING T...
- Publication number 20110096803
- Publication date Apr 28, 2011
- Finisar Corporation
- Ralph H. Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAVEGUIDE DEVICE HAVING DELTA DOPED ACTIVE REGION
- Publication number 20100290497
- Publication date Nov 18, 2010
- Agere Systems Inc.
- Joseph Michael Freund
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LIGHT-EMITTING DEVICES
- Publication number 20100289056
- Publication date Nov 18, 2010
- Mitsubishi Electric Corporation
- Akihito Ohno
- B82 - NANO-TECHNOLOGY
Information Patent Application
High-Temperature Interband Cascade Lasers
- Publication number 20100097690
- Publication date Apr 22, 2010
- The Government of the United States of America, as represented by the Secreta...
- Igor Vurgaftman
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR LIGHT-EMITTING DEVICE
- Publication number 20100019255
- Publication date Jan 28, 2010
- SONY CORPORATION
- Sachio Karino
- B82 - NANO-TECHNOLOGY
Information Patent Application
VERTICAL-CAVITY SURFACE-EMITTING LASER, MODULE, OPTICAL TRANSMISSIO...
- Publication number 20090201963
- Publication date Aug 13, 2009
- FUJI XEROX CO., LTD
- Masahiro Yoshikawa
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR LIGHT-EMITTING DEVICES
- Publication number 20080073660
- Publication date Mar 27, 2008
- Mitsubishi Electric Corporation
- Akihito Ohno
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR LAYER STRUCTURE WITH SUPERLATTICE
- Publication number 20080025360
- Publication date Jan 31, 2008
- Christoph Eichler
- B82 - NANO-TECHNOLOGY
Information Patent Application
Nitride Semiconductor Device And Production Method Thereof
- Publication number 20070290230
- Publication date Dec 20, 2007
- Yasutoshi Kawaguchi
- B82 - NANO-TECHNOLOGY
Information Patent Application
High-power infrared semiconductor diode light emitting device
- Publication number 20070002915
- Publication date Jan 4, 2007
- SemiNex Corporation
- David M. Bean
- B82 - NANO-TECHNOLOGY
Information Patent Application
Distributed bragg reflector for optoelectronic device
- Publication number 20060045162
- Publication date Mar 2, 2006
- Finisar Corporation
- Ralph H. Johnson
- B82 - NANO-TECHNOLOGY
Information Patent Application
Ridge-type semiconductor laser element fabrication method
- Publication number 20050084997
- Publication date Apr 21, 2005
- Rohm Co., Ltd.
- Takashi Kimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ridge-type semiconductor laser element and fabrication method thereof
- Publication number 20030031223
- Publication date Feb 13, 2003
- Takashi Kimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating semiconductor device
- Publication number 20020127759
- Publication date Sep 12, 2002
- FUJITSU QUANTUM DEVICES LIMITED
- Takayuki Watanabe
- H01 - BASIC ELECTRIC ELEMENTS

plane dependent doping

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor layer stack and method for producing same

Semiconductor optical element, semiconductor optical element formin...

SiGeSn laser diodes and method of fabricating same

Semiconductor layer stack and method for producing same

Semiconductor optical element, semiconductor optical element formin...

Modulation doped semiconductor laser and manufacturing method therefor

Surface-emitting laser device and light emitting device including t...

Semiconductor light emitting element

Vertical cavity surface emitting laser

Light-emitting semiconductor device, light-emitting semiconductor c...

Laterally tailoring current injection for laser diodes

Nitride semiconductor device and production method thereof

High-temperature interband cascade lasers

Asymmetric DBR pairs combined with periodic and modulation doping t...

Semiconductor light-emitting device

Asymmetric DBR pairs combined with periodic and modulation doping t...

Waveguide device having delta doped active region

High-temperature interband cascade lasers

VCSEL optimized for high speed data

Semiconductor layer structure with superlattice

Vertical-cavity surface-emitting laser, module, optical transmissio...

High-power infrared semiconductor diode light emitting device

Distributed Bragg Reflector for optoelectronic device

Ridge-type semiconductor laser element fabrication method

Ridge-type semiconductor laser element

Method for fabricating semiconductor device

Semiconductor laser with light emitting slant plane and method of m...

Method for forming semiconductor laser emitting light from slant plane

Stepped substrate semiconductor laser for emitting light at slant p...

Semiconductor device and its manufacture utilizing crystal orientat...

Patents Applicationslast 30 patents

RADIATION-EMITTING SEMICONDUCTOR BODY, LASER DIODE AND LIGHT-EMITTI...

SEMICONDUCTOR LAYER STACK AND METHOD FOR PRODUCING SAME

SEMICONDUCTOR OPTICAL ELEMENT, SEMICONDUCTOR OPTICAL ELEMENT FORMIN...

EDGE EMITTING LASER DEVICE

SiGeSn LASER DIODES AND METHOD OF FABRICATING SAME

SEMICONDUCTOR LAYER STACK AND METHOD FOR PRODUCING SAME

MODULATION DOPED SEMICONDUCTOR LASER AND MANUFACTURING METHOD THEREFOR

SEMICONDUCTOR OPTICAL ELEMENT, SEMICONDUCTOR OPTICAL ELEMENT FORMIN...

VERTICAL CAVITY SURFACE EMITTING LASER

SEMICONDUCTOR LIGHT EMITTING DEVICE

LASER DIODES INCLUDING SUBSTRATES HAVING SEMIPOLAR SURFACE PLANE OR...

NITRIDE SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF

ASYMMETRIC DBR PAIRS COMBINED WITH PERIODIC AND MODULATION DOPING T...

High-Temperature Interband Cascade Lasers

NITRIDE SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF

SURFACE EMITTING LASER ELEMENT, SURFACE EMITTING LASER ARRAY, OPTIC...

ASYMMETRIC DBR PAIRS COMBINED WITH PERIODIC AND MODULATION DOPING T...

WAVEGUIDE DEVICE HAVING DELTA DOPED ACTIVE REGION

SEMICONDUCTOR LIGHT-EMITTING DEVICES

High-Temperature Interband Cascade Lasers

SEMICONDUCTOR LIGHT-EMITTING DEVICE

VERTICAL-CAVITY SURFACE-EMITTING LASER, MODULE, OPTICAL TRANSMISSIO...

SEMICONDUCTOR LIGHT-EMITTING DEVICES

SEMICONDUCTOR LAYER STRUCTURE WITH SUPERLATTICE

Nitride Semiconductor Device And Production Method Thereof

High-power infrared semiconductor diode light emitting device

Distributed bragg reflector for optoelectronic device

Ridge-type semiconductor laser element fabrication method

Ridge-type semiconductor laser element and fabrication method thereof

Method for fabricating semiconductor device