porous Si

Industry

CPC
H01S5/3227

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Parent Industries

HELECTRICITY H01Electric elements H01SDEVICES USING STIMULATED EMISSION H01S5/00Semiconductor lasers

Current Industry

H01S5/3227porous Si

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Methods for producing new silicon light source and devices
- Patent number 9,337,395
- Issue date May 10, 2016
- TUBITAK
- Seref Kalem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dislocation-based light emitter
- Patent number 7,880,189
- Issue date Feb 1, 2011
- IHP GmbH-Innovations for High Performance Microelectronics/ Leibniz-Institut...
- Martin Kittler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a device comprising layers of planes of quantum dots
- Patent number 6,690,027
- Issue date Feb 10, 2004
- France Telecom
- Daniel Bensahel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laser device based on silicon nanostructures
- Patent number 6,661,035
- Issue date Dec 9, 2003
- INFM Instituto Nazionale per la Fisica Della Materia
- Luca Dal Negro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optical component comprising layers of porous silicon
- Patent number 5,696,629
- Issue date Dec 9, 1997
- Forschungszentrum Julich GmbH
- Michael Gotz Berger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for generating photluminescence emission lines...
- Patent number 5,552,667
- Issue date Sep 3, 1996
- Texas Instrument Incorporated
- Chin-Chen Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emission from rare-earth element-doped CaF.sub.2 thin films b...
- Patent number 5,384,795
- Issue date Jan 24, 1995
- Texas Instruments Incorporated
- Chih-Chen Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-based microlaser by doped thin films
- Patent number 5,369,657
- Issue date Nov 29, 1994
- Texas Instruments Incorporated
- Chih-Chen Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for generating photoluminescence emission lines from transit...
- Patent number 5,306,385
- Issue date Apr 26, 1994
- Texas Instruments Incorporated
- Chih-Chen Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Porous silicon as a light source for rare earth-doped CaF.sub.2 laser
- Patent number 5,301,204
- Issue date Apr 5, 1994
- Texas Instruments Incorporated
- Chih-Chen Cho
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHODS FOR PRODUCING NEW SILICON LIGHT SOURCE AND DEVICES
- Publication number 20150132870
- Publication date May 14, 2015
- Tubitak
- Seref Kalem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dislocation-based light emitter
- Publication number 20090321757
- Publication date Dec 31, 2009
- Martin Kittler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Laser device based on silicon nanostructures
- Publication number 20020163003
- Publication date Nov 7, 2002
- INFM ISTITUTO NAZIONALE PER LA FISICA DELLA MATERIA
- Luca Dal Negro
- B82 - NANO-TECHNOLOGY

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Methods for producing new silicon light source and devices

Dislocation-based light emitter

Method for making a device comprising layers of planes of quantum dots

Laser device based on silicon nanostructures

Optical component comprising layers of porous silicon

Apparatus and method for generating photluminescence emission lines...

Light emission from rare-earth element-doped CaF.sub.2 thin films b...

Silicon-based microlaser by doped thin films

Method for generating photoluminescence emission lines from transit...

Porous silicon as a light source for rare earth-doped CaF.sub.2 laser

Patents Applicationslast 30 patents

METHODS FOR PRODUCING NEW SILICON LIGHT SOURCE AND DEVICES

Dislocation-based light emitter

Laser device based on silicon nanostructures