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H01L21/02658

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/02658Pretreatments

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Methods and systems for cleaning high aspect ratio structures
- Patent number 12,170,196
- Issue date Dec 17, 2024
- Applied Materials, Inc.
- Schubert S. Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,157,956
- Issue date Dec 3, 2024
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor light-emitting element and method of producing the same
- Patent number 12,125,702
- Issue date Oct 22, 2024
- Dowa Electronics Materials Co., Ltd.
- Osamu Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,116,695
- Issue date Oct 15, 2024
- United States of America as represented by Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Multi-function substrate
- Patent number 12,113,071
- Issue date Oct 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Eugene I-Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for semiconductor silicon wafer
- Patent number 12,046,469
- Issue date Jul 23, 2024
- Globalwafers Japan Co., Ltd
- Takeshi Senda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 12,046,471
- Issue date Jul 23, 2024
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device for forming graphene structure
- Patent number 12,014,907
- Issue date Jun 18, 2024
- Tokyo Electron Limited
- Ryota Ifuku
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Process for preparing a support for a semiconductor structure
- Patent number 12,009,209
- Issue date Jun 11, 2024
- Soitec
- Young-Pil Kim
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Passivation of silicon dioxide defects for atomic layer deposition
- Patent number 11,993,844
- Issue date May 28, 2024
- The Regents of the University of California
- Steven Wolf
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Laminate of aluminum nitride single-crystal substrate
- Patent number 11,952,677
- Issue date Apr 9, 2024
- Tokuyama Corporation
- Masao Ariyuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Atomic layer deposition of III-V compounds to form V-NAND devices
- Patent number 11,956,977
- Issue date Apr 9, 2024
- ASM IP Holding B.V.
- Tom E. Blomberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor epitaxial wafer and method of producing semiconductor...
- Patent number 11,935,745
- Issue date Mar 19, 2024
- Sumco Corporation
- Ryosuke Okuyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a source/drain
- Patent number 11,929,401
- Issue date Mar 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Wei Lee
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for conditioning a processing reactor
- Patent number 11,926,892
- Issue date Mar 12, 2024
- GlobalWafers Co., Ltd.
- Gang Wang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Heterogeneous semiconductor device substrates with high quality epi...
- Patent number 11,908,922
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Carlos H. Diaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming lateral heterojunctions in two-dimensional mate...
- Patent number 11,894,449
- Issue date Feb 6, 2024
- The Government of the United States of America, as represented by the Secreta...
- Berend T. Jonker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single crystal epitaxial layer having a rhombohedral lattice
- Patent number 11,885,040
- Issue date Jan 30, 2024
- UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR OF NASA.
- Hyun Jung Kim
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of forming transition metal dichalcogenide thin film
- Patent number 11,881,399
- Issue date Jan 23, 2024
- Samsung Electronics Co., Ltd.
- Kyung-Eun Byun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting devices having lateral heterojunctions in two-dimens...
- Patent number 11,862,716
- Issue date Jan 2, 2024
- The Government of the United States of America, as represented by the Secreta...
- Berend T. Jonker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermal deposition of silicon-germanium
- Patent number 11,830,734
- Issue date Nov 28, 2023
- Applied Materials, Inc.
- Huiyuan Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,795,575
- Issue date Oct 24, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,795,574
- Issue date Oct 24, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,788,202
- Issue date Oct 17, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride single crystal substrate
- Patent number 11,767,612
- Issue date Sep 26, 2023
- Tokuyama Corporation
- Masayuki Fukuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,761,116
- Issue date Sep 19, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,761,115
- Issue date Sep 19, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial wafer manufacturing method and epitaxial wafer
- Patent number RE49657
- Issue date Sep 12, 2023
- Sumco Corporation
- Takuro Iwanaga
Information Patent Grant
Methods of re-using a silicon carbide substrate
- Patent number 11,735,642
- Issue date Aug 22, 2023
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Display device and manufacturing method thereof
- Patent number 11,715,739
- Issue date Aug 1, 2023
- Samsung Display Co., Ltd.
- Jong Oh Seo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR WAFER, AND NITRIDE S...
- Publication number 20240404826
- Publication date Dec 5, 2024
- Shin-Etsu Handotai Co., Ltd.
- Kazunori HAGIMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CERAMIC SUBSTRATE STRUCTURES AND METHODS OF FORMING THE SAME
- Publication number 20240339320
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Ming CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-FUNCTION SUBSTRATE
- Publication number 20240332306
- Publication date Oct 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Eugene I-Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EP...
- Publication number 20240297201
- Publication date Sep 5, 2024
- SUMCO CORPORATION
- Takeshi Kadono
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SUPPORTS FOR SEMICONDUCTOR STRUCTURES
- Publication number 20240290615
- Publication date Aug 29, 2024
- SOITEC
- Young-Pil Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EP...
- Publication number 20240282801
- Publication date Aug 22, 2024
- SUMCO CORPORATION
- Takeshi KADONO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
FILM FORMING METHOD AND SUBSTRATE PROCESSING DEVICE
- Publication number 20240274436
- Publication date Aug 15, 2024
- TOKYO ELECTRON LIMITED
- Shota ISHIBASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE
- Publication number 20240266184
- Publication date Aug 8, 2024
- NANYA TECHNOLOGY CORPORATION
- HSUAN-WU LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCT...
- Publication number 20240222117
- Publication date Jul 4, 2024
- Kokusai Electric Corporation
- Yuki YOSHIMOTO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method of Forming a Source/Drain
- Publication number 20240213330
- Publication date Jun 27, 2024
- Taiwan Semiconductor Manfacturing Co., Ltd.
- Chien-Wei Lee
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PREPARING A GERMANIUM SUBSTRATE AND GERMANIUM SUBSTRATE...
- Publication number 20240186141
- Publication date Jun 6, 2024
- Fraunhofer-Gesellschaft zur Forderung der angewandten Forschung e.V.
- Stefan JANZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE FOR MEMORY ELEMENTS
- Publication number 20240170278
- Publication date May 23, 2024
- Mitsubishi Gas Chemical Company, Inc.
- Toshiyuki OIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR WAFER
- Publication number 20240162041
- Publication date May 16, 2024
- Shin-Etsu Handotai Co., Ltd.
- Kazunori HAGIMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240105776
- Publication date Mar 28, 2024
- Samsung Electronics Co.,Ltd.
- Namkyu Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20240096979
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wang-Chun HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE SINGLE CRYSTAL SUBSTRATE
- Publication number 20230407521
- Publication date Dec 21, 2023
- Tokuyama Corporation
- Masayuki FUKUDA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR SUBSTRATE AND FABRICATION METHOD OF THE SEMICONDUCTOR...
- Publication number 20230369400
- Publication date Nov 16, 2023
- ROHM CO., LTD.
- Makoto TAKAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Semiconductor Devices in a Layer of Epitaxial Si...
- Publication number 20230361196
- Publication date Nov 9, 2023
- Infineon Techmologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230352302
- Publication date Nov 2, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRAPHENE STRUCTURE AND METHOD OF FORMING GRAPHENE STRUCTURE
- Publication number 20230207312
- Publication date Jun 29, 2023
- Samsung Electronics Co., Ltd.
- Eunkyu Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE SUBSTRATE, METHOD FOR PRODUCING COMPOSITE SUBSTRATE, SEMI...
- Publication number 20230178368
- Publication date Jun 8, 2023
- Mitsubishi Electric Corporation
- Hiroyuki KINOSHITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230148397
- Publication date May 11, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTIMIZED THICK HETEROEPITAXIAL GROWTH OF SEMICONDUCTORS WITH IN-SI...
- Publication number 20230139650
- Publication date May 4, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTIMIZED THICK HETEROEPITAXIAL GROWTH OF SEMICONDUCTORS WITH IN-SI...
- Publication number 20230137113
- Publication date May 4, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230095501
- Publication date Mar 30, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230100277
- Publication date Mar 30, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICOND...
- Publication number 20230102650
- Publication date Mar 30, 2023
- Samsung Electronics Co., Ltd.
- Geuno JEONG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF FORMING CONDUCTIVE MEMBER AND METHOD OF FORMING CHANNEL
- Publication number 20230086545
- Publication date Mar 23, 2023
- TOKYO ELECTRON LIMITED
- Koji AKIYAMA
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230090724
- Publication date Mar 23, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...
- Publication number 20230059737
- Publication date Feb 23, 2023
- Sumitomo Electric Industries, Ltd.
- Hironori ITOH
- H01 - BASIC ELECTRIC ELEMENTS

Pretreatments

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Methods and systems for cleaning high aspect ratio structures

Optimized heteroepitaxial growth of semiconductors

Semiconductor light-emitting element and method of producing the same

Optimized heteroepitaxial growth of semiconductors

Multi-function substrate

Manufacturing method for semiconductor silicon wafer

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Method and device for forming graphene structure

Process for preparing a support for a semiconductor structure

Passivation of silicon dioxide defects for atomic layer deposition

Laminate of aluminum nitride single-crystal substrate

Atomic layer deposition of III-V compounds to form V-NAND devices

Semiconductor epitaxial wafer and method of producing semiconductor...

Method of forming a source/drain

Methods for conditioning a processing reactor

Heterogeneous semiconductor device substrates with high quality epi...

Methods for forming lateral heterojunctions in two-dimensional mate...

Single crystal epitaxial layer having a rhombohedral lattice

Method of forming transition metal dichalcogenide thin film

Light-emitting devices having lateral heterojunctions in two-dimens...

Thermal deposition of silicon-germanium

Optimized heteroepitaxial growth of semiconductors

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Group III nitride single crystal substrate

Optimized heteroepitaxial growth of semiconductors

Optimized heteroepitaxial growth of semiconductors

Epitaxial wafer manufacturing method and epitaxial wafer

Methods of re-using a silicon carbide substrate

Display device and manufacturing method thereof

Patents Applicationslast 30 patents

METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR WAFER, AND NITRIDE S...

CERAMIC SUBSTRATE STRUCTURES AND METHODS OF FORMING THE SAME

MULTI-FUNCTION SUBSTRATE

METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EP...

SUPPORTS FOR SEMICONDUCTOR STRUCTURES

METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EP...

FILM FORMING METHOD AND SUBSTRATE PROCESSING DEVICE

METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE

METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCT...

Method of Forming a Source/Drain

METHOD FOR PREPARING A GERMANIUM SUBSTRATE AND GERMANIUM SUBSTRATE...

METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE FOR MEMORY ELEMENTS

METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR WAFER

SEMICONDUCTOR DEVICES

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME

GROUP III NITRIDE SINGLE CRYSTAL SUBSTRATE

SEMICONDUCTOR SUBSTRATE AND FABRICATION METHOD OF THE SEMICONDUCTOR...

Methods of Forming Semiconductor Devices in a Layer of Epitaxial Si...

Optimized Heteroepitaxial Growth of Semiconductors

GRAPHENE STRUCTURE AND METHOD OF FORMING GRAPHENE STRUCTURE

COMPOSITE SUBSTRATE, METHOD FOR PRODUCING COMPOSITE SUBSTRATE, SEMI...

Optimized Heteroepitaxial Growth of Semiconductors

OPTIMIZED THICK HETEROEPITAXIAL GROWTH OF SEMICONDUCTORS WITH IN-SI...

OPTIMIZED THICK HETEROEPITAXIAL GROWTH OF SEMICONDUCTORS WITH IN-SI...

Optimized Heteroepitaxial Growth of Semiconductors

Optimized Heteroepitaxial Growth of Semiconductors

SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICOND...

METHOD OF FORMING CONDUCTIVE MEMBER AND METHOD OF FORMING CHANNEL

Optimized Heteroepitaxial Growth of Semiconductors

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...