Programming all cells in an array, sector or block to the same state prior to flash erasing

Industry

CPC
G11C16/107

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Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C16/00Erasable programmable read-only memories

Current Industry

G11C16/107Programming all cells in an array, sector or block to the same state prior to flash erasing

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Memory device capable of reducing program disturbance and erasing m...
- Patent number 12,142,327
- Issue date Nov 12, 2024
- Yangtze Memory Technologies Co., Ltd.
- Qiang Tang
- G11 - INFORMATION STORAGE
Information Patent Grant
Power state aware scan frequency
- Patent number 12,087,369
- Issue date Sep 10, 2024
- Micron Technology, Inc.
- Vamsi Pavan Rayaprolu
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device performing block program and operating method...
- Patent number 12,073,887
- Issue date Aug 27, 2024
- Samsung Electronics Co., Ltd.
- Sanggyu Ko
- G11 - INFORMATION STORAGE
Information Patent Grant
Verifying or reading a cell in an analog neural memory in a deep le...
- Patent number 12,046,290
- Issue date Jul 23, 2024
- Silicon Storage Technology, Inc.
- Hieu Van Tran
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory system
- Patent number 12,029,031
- Issue date Jul 2, 2024
- Kioxia Corporation
- Takehiko Amaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Memories for calibrating sensing of memory cell data states
- Patent number 11,842,774
- Issue date Dec 12, 2023
- Micron Technology, Inc.
- Gianfranco Valeri
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Voltage offset bin selection by die group for memory devices
- Patent number 11,837,291
- Issue date Dec 5, 2023
- Micron Technology, Inc.
- Vamsi Pavan Rayaprolu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Block family combination and voltage bin selection
- Patent number 11,755,478
- Issue date Sep 12, 2023
- Micron Technology, Inc.
- Michael Sheperek
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Determining threshold values for voltage distribution metrics
- Patent number 11,756,636
- Issue date Sep 12, 2023
- Micron Technology, Inc.
- Vamsi Pavan Rayaprolu
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory system
- Patent number 11,696,441
- Issue date Jul 4, 2023
- Kioxia Corporation
- Takehiko Amaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory system and method of operating the same
- Patent number 11,646,093
- Issue date May 9, 2023
- SK hynix Inc.
- Jae Wook Yang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Apparatus for memory cell programming
- Patent number 11,574,685
- Issue date Feb 7, 2023
- Micron Technology, Inc.
- Aaron S. Yip
- G11 - INFORMATION STORAGE
Information Patent Grant
Modifying memory bank operating parameters
- Patent number 11,557,367
- Issue date Jan 17, 2023
- Micron Technology, Inc.
- Christopher G. Wieduwilt
- G11 - INFORMATION STORAGE
Information Patent Grant
Initiating media management operation using voltage distribution me...
- Patent number 11,495,309
- Issue date Nov 8, 2022
- Micron Technology, Inc.
- Vamsi Pavan Rayaprolu
- G11 - INFORMATION STORAGE
Information Patent Grant
Fast interval read setup for 3D memory
- Patent number 11,488,657
- Issue date Nov 1, 2022
- Macronix International Co., Ltd.
- Jen-Hung Huang
- G11 - INFORMATION STORAGE
Information Patent Grant
Fast interval read setup for 3D NAND flash
- Patent number 11,475,954
- Issue date Oct 18, 2022
- Macronix International Co., Ltd.
- Han-Sung Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory controller, memory device and storage device
- Patent number 11,468,952
- Issue date Oct 11, 2022
- Samsung Electronics Co., Ltd.
- In-Su Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and reading method thereof
- Patent number 11,423,998
- Issue date Aug 23, 2022
- Windbond Electronics Corp.
- Makoto Senoo
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device capable of reducing program disturbance and erasing m...
- Patent number 11,393,544
- Issue date Jul 19, 2022
- Yangtze Memory Technologies Co., Ltd.
- Qiang Tang
- G11 - INFORMATION STORAGE
Information Patent Grant
High-voltage shifter with reduced transistor degradation
- Patent number 11,380,401
- Issue date Jul 5, 2022
- Micron Technology, Inc.
- Shigekazu Yamada
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory system
- Patent number 11,348,934
- Issue date May 31, 2022
- Kioxia Corporation
- Takehiko Amaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of improving read current stability in analog non-volatile m...
- Patent number 11,309,042
- Issue date Apr 19, 2022
- Silicon Storage Technology, Inc.
- Viktor Markov
- G11 - INFORMATION STORAGE
Information Patent Grant
Programming techniques including an all string verify mode for sing...
- Patent number 11,302,409
- Issue date Apr 12, 2022
- SanDisk Technologies LLC
- Xue Pitner
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus for calibrating sensing of memory cell data states
- Patent number 11,270,774
- Issue date Mar 8, 2022
- Micron Technology, Inc.
- Gianfranco Valeri
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Voltage offset bin selection by die group for memory devices
- Patent number 11,270,772
- Issue date Mar 8, 2022
- Micron Technology, Inc.
- Vamsi Pavan Rayaprolu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Block family combination and voltage bin selection
- Patent number 11,263,134
- Issue date Mar 1, 2022
- Micron Technology, Inc.
- Michael Sheperek
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Power state aware scan frequency
- Patent number 11,222,704
- Issue date Jan 11, 2022
- Micron Technology, Inc.
- Vamsi Pavan Rayaprolu
- G11 - INFORMATION STORAGE
Information Patent Grant
Controller and method of operating the same
- Patent number 11,183,254
- Issue date Nov 23, 2021
- Samsung Electronics Co., Ltd.
- Eun-Jin Yun
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory system and operating method thereof
- Patent number 11,170,862
- Issue date Nov 9, 2021
- SK Hynix Inc.
- Mi Seon Han
- G11 - INFORMATION STORAGE
Information Patent Grant
Read data sorting method and storage device for sequentially transm...
- Patent number 11,127,466
- Issue date Sep 21, 2021
- Shenzhen EpoStar Electronics Limited CO.
- Tsan-Lin Chen
- G06 - COMPUTING CALCULATING COUNTING

Patents Applicationslast 30 patents

Information Patent Application
NONVOLATILE MEMORY DEVICES AND METHODS OF CONTROLLING ERASE OPERATI...
- Publication number 20240420772
- Publication date Dec 19, 2024
- Samsung Electronics Co., Ltd.
- Sangwon Park
- G11 - INFORMATION STORAGE
Information Patent Application
Verifying Or Reading A Cell In An Analog Neural Memory In A Deep Le...
- Publication number 20240347111
- Publication date Oct 17, 2024
- Silicon Storage Techonology, Inc.
- Hieu Van Tran
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PROGRAMMING ERASE STATE AS LAST PROGRAM STATE DURING A PROGRAMMING...
- Publication number 20240290390
- Publication date Aug 29, 2024
- Western Digital Technologies, Inc.
- Yanjie Wang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY SYSTEM
- Publication number 20240284668
- Publication date Aug 22, 2024
- KIOXIA Corporation
- Takehiko AMAKI
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND NON-TRANSITORY COMPUTER-READABLE STORAGE MEDIUM AND APPA...
- Publication number 20240177777
- Publication date May 30, 2024
- SILICON MOTION, INC.
- Shen-Ting CHIU
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH CONCURRENT SUB-BLOCK PROGRAMMING
- Publication number 20230343395
- Publication date Oct 26, 2023
- Western Digital Technologies, Inc.
- Ke Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY SYSTEM
- Publication number 20230320087
- Publication date Oct 5, 2023
- KIOXIA Corporation
- Takehiko AMAKI
- G11 - INFORMATION STORAGE
Information Patent Application
NAND FLASH MEMORY DEVICE CAPABLE OF SELECTIVELY ERASING ONE FLASH M...
- Publication number 20230128347
- Publication date Apr 27, 2023
- SK HYNIX INC.
- Honam YOO
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CONTROLLER, MEMORY DEVICE AND STORAGE DEVICE
- Publication number 20230005547
- Publication date Jan 5, 2023
- Samsung Electronics Co., Ltd.
- IN-SU KIM
- G11 - INFORMATION STORAGE
Information Patent Application
DETERMINING THRESHOLD VALUES FOR VOLTAGE DISTRIBUTION METRICS
- Publication number 20220415412
- Publication date Dec 29, 2022
- Micron Technology, Inc.
- Vamsi Pavan Rayaprolu
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE CAPABLE OF REDUCING PROGRAM DISTURBANCE AND ERASING M...
- Publication number 20220336026
- Publication date Oct 20, 2022
- Yangtze Memory Technologies Co., Ltd.
- Qiang Tang
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY SYSTEM
- Publication number 20220246630
- Publication date Aug 4, 2022
- KIOXIA Corporation
- Takehiko AMAKI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY SYSTEM AND METHOD OF OPERATING THE SAME
- Publication number 20220238173
- Publication date Jul 28, 2022
- SK HYNIX INC.
- Jae Wook YANG
- G11 - INFORMATION STORAGE
Information Patent Application
POWER STATE AWARE SCAN FREQUENCY
- Publication number 20220199170
- Publication date Jun 23, 2022
- Micron Technology, Inc.
- Vamsi Pavan Rayaprolu
- G11 - INFORMATION STORAGE
Information Patent Application
DETERMINING THRESHOLD VALUES FOR VOLTAGE DISTRIBUTION METRICS IN ME...
- Publication number 20220189564
- Publication date Jun 16, 2022
- Micron Technology, Inc.
- Vamsi Pavan Rayaprolu
- G11 - INFORMATION STORAGE
Information Patent Application
VOLTAGE OFFSET BIN SELECTION BY DIE GROUP FOR MEMORY DEVICES
- Publication number 20220157385
- Publication date May 19, 2022
- Micron Technology, Inc.
- Vamsi Pavan RAYAPROLU
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FAST INTERVAL READ SETUP FOR 3D NAND FLASH
- Publication number 20220157379
- Publication date May 19, 2022
- Macronix International Co., Ltd.
- Han-Sung CHEN
- G11 - INFORMATION STORAGE
Information Patent Application
BLOCK FAMILY COMBINATION AND VOLTAGE BIN SELECTION
- Publication number 20220156188
- Publication date May 19, 2022
- Micron Technology, Inc.
- Michael Sheperek
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY CONTROLLER, MEMORY DEVICE AND STORAGE DEVICE
- Publication number 20220076755
- Publication date Mar 10, 2022
- Samsung Electronics Co., Ltd.
- IN-SU KIM
- G11 - INFORMATION STORAGE
Information Patent Application
BLOCK FAMILY COMBINATION AND VOLTAGE BIN SELECTION
- Publication number 20220066930
- Publication date Mar 3, 2022
- Micron Technology, Inc.
- Michael Sheperek
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
VOLTAGE OFFSET BIN SELECTION BY DIE GROUP FOR MEMORY DEVICES
- Publication number 20220068396
- Publication date Mar 3, 2022
- Micron Technology, Inc.
- Vamsi Pavan RAYAPROLU
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHOD OF IMPROVING READ CURRENT STABILITY IN ANALOG NON-VOLATILE M...
- Publication number 20210407602
- Publication date Dec 30, 2021
- Silicon Storage Technology, Inc.
- Viktor Markov
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND READING METHOD THEREOF
- Publication number 20210366561
- Publication date Nov 25, 2021
- WINBOND ELECTRONICS CORP.
- Makoto SENOO
- G11 - INFORMATION STORAGE
Information Patent Application
APPARATUS FOR MEMORY CELL PROGRAMMING
- Publication number 20210358554
- Publication date Nov 18, 2021
- Micron Technology, Inc.
- Aaron S. Yip
- G11 - INFORMATION STORAGE
Information Patent Application
MODIFYING MEMORY BANK OPERATING PARAMETERS
- Publication number 20210335443
- Publication date Oct 28, 2021
- Micron Technology, Inc.
- Christopher G. Wieduwilt
- G11 - INFORMATION STORAGE
Information Patent Application
ALL STRING VERIFY MODE FOR SINGLE-LEVEL CELL
- Publication number 20210327520
- Publication date Oct 21, 2021
- SANDISK TECHNOLOGIES LLC
- Xue Pitner
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY SYSTEM AND OPERATING METHOD THEREOF
- Publication number 20210295933
- Publication date Sep 23, 2021
- SK HYNIX INC.
- Mi Seon HAN
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH-VOLTAGE SHIFTER WITH REDUCED TRANSISTOR DEGRADATION
- Publication number 20210249084
- Publication date Aug 12, 2021
- Micron Technology, Inc.
- Shigekazu Yamada
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY SYSTEM AND METHOD OF OPERATING THE SAME
- Publication number 20210241840
- Publication date Aug 5, 2021
- SK HYNIX INC.
- Sung Won BAE
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE CAPABLE OF REDUCING PROGRAM DISTURBANCE AND ERASING M...
- Publication number 20210183459
- Publication date Jun 17, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Qiang Tang
- G11 - INFORMATION STORAGE

Programming all cells in an array, sector or block to the same state prior to flash erasing

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Memory device capable of reducing program disturbance and erasing m...

Power state aware scan frequency

Semiconductor device performing block program and operating method...

Verifying or reading a cell in an analog neural memory in a deep le...

Memory system

Memories for calibrating sensing of memory cell data states

Voltage offset bin selection by die group for memory devices

Block family combination and voltage bin selection

Determining threshold values for voltage distribution metrics

Memory system

Memory system and method of operating the same

Apparatus for memory cell programming

Modifying memory bank operating parameters

Initiating media management operation using voltage distribution me...

Fast interval read setup for 3D memory

Fast interval read setup for 3D NAND flash

Memory controller, memory device and storage device

Semiconductor device and reading method thereof

Memory device capable of reducing program disturbance and erasing m...

High-voltage shifter with reduced transistor degradation

Memory system

Method of improving read current stability in analog non-volatile m...

Programming techniques including an all string verify mode for sing...

Apparatus for calibrating sensing of memory cell data states

Voltage offset bin selection by die group for memory devices

Block family combination and voltage bin selection

Power state aware scan frequency

Controller and method of operating the same

Memory system and operating method thereof

Read data sorting method and storage device for sequentially transm...

Patents Applicationslast 30 patents

NONVOLATILE MEMORY DEVICES AND METHODS OF CONTROLLING ERASE OPERATI...

Verifying Or Reading A Cell In An Analog Neural Memory In A Deep Le...

PROGRAMMING ERASE STATE AS LAST PROGRAM STATE DURING A PROGRAMMING...

MEMORY SYSTEM

METHOD AND NON-TRANSITORY COMPUTER-READABLE STORAGE MEDIUM AND APPA...

NON-VOLATILE MEMORY WITH CONCURRENT SUB-BLOCK PROGRAMMING

MEMORY SYSTEM

NAND FLASH MEMORY DEVICE CAPABLE OF SELECTIVELY ERASING ONE FLASH M...

MEMORY CONTROLLER, MEMORY DEVICE AND STORAGE DEVICE

DETERMINING THRESHOLD VALUES FOR VOLTAGE DISTRIBUTION METRICS

MEMORY DEVICE CAPABLE OF REDUCING PROGRAM DISTURBANCE AND ERASING M...

MEMORY SYSTEM

MEMORY SYSTEM AND METHOD OF OPERATING THE SAME

POWER STATE AWARE SCAN FREQUENCY

DETERMINING THRESHOLD VALUES FOR VOLTAGE DISTRIBUTION METRICS IN ME...

VOLTAGE OFFSET BIN SELECTION BY DIE GROUP FOR MEMORY DEVICES

FAST INTERVAL READ SETUP FOR 3D NAND FLASH

BLOCK FAMILY COMBINATION AND VOLTAGE BIN SELECTION

MEMORY CONTROLLER, MEMORY DEVICE AND STORAGE DEVICE

BLOCK FAMILY COMBINATION AND VOLTAGE BIN SELECTION

VOLTAGE OFFSET BIN SELECTION BY DIE GROUP FOR MEMORY DEVICES

METHOD OF IMPROVING READ CURRENT STABILITY IN ANALOG NON-VOLATILE M...

SEMICONDUCTOR DEVICE AND READING METHOD THEREOF

APPARATUS FOR MEMORY CELL PROGRAMMING

MODIFYING MEMORY BANK OPERATING PARAMETERS

ALL STRING VERIFY MODE FOR SINGLE-LEVEL CELL

MEMORY SYSTEM AND OPERATING METHOD THEREOF

HIGH-VOLTAGE SHIFTER WITH REDUCED TRANSISTOR DEGRADATION

MEMORY SYSTEM AND METHOD OF OPERATING THE SAME

MEMORY DEVICE CAPABLE OF REDUCING PROGRAM DISTURBANCE AND ERASING M...