Radiation hardened circuits

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H01L2027/11894

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR

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H01L2027/11894Radiation hardened circuits

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Patents Grantslast 30 patents

Information Patent Grant
Methods for fabricating radiation hardened MOS devices
- Patent number 9,653,544
- Issue date May 16, 2017
- Texas Instruments Incorporated
- James Fred Salzman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device having improved radiation hardness and high breakdown voltages
- Patent number 9,620,586
- Issue date Apr 11, 2017
- Texas Instruments Incorporated
- James Fred Salzman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device having improved radiation hardness and high breakdown voltages
- Patent number 9,281,232
- Issue date Mar 8, 2016
- Texas Instruments Incorporated
- James Fred Salzman
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Radiation Hardened MOS Devices and Methods of Fabrication
- Publication number 20160141389
- Publication date May 19, 2016
- TEXAS INSTRUMENTS INCORPORATED
- James Fred Salzman
- H01 - BASIC ELECTRIC ELEMENTS