read-only digital stores using storage elements with more than two stable states

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G11C11/5692

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GPHYSICS G11Information storage G11CSTATIC STORES G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements Storage elements therefor

Current Industry

G11C11/5692read-only digital stores using storage elements with more than two stable states

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Patents Grantslast 30 patents

Information Patent Grant
Radiation hardened e-fuse macro
- Patent number 12,080,344
- Issue date Sep 3, 2024
- BAE Systems Information and Electronic Systems Integration Inc.
- Jason F. Ross
- G11 - INFORMATION STORAGE
Information Patent Grant
Gradual breakdown memory cell having multiple different dielectrics
- Patent number 11,335,636
- Issue date May 17, 2022
- Hefei Reliance Memory Limited
- Liang Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory with multi-level cell array and associated read...
- Patent number 11,264,092
- Issue date Mar 1, 2022
- eMemory Technology Inc.
- Chia-Fu Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-bit-per-cell three-dimensional resistive random-access memory...
- Patent number 11,170,863
- Issue date Nov 9, 2021
- SOUTHERN UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Guobiao Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-bit read-only memory device
- Patent number 11,152,060
- Issue date Oct 19, 2021
- Intel Corporation
- Xiaofei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bi-sided pattern processor
- Patent number 10,714,172
- Issue date Jul 14, 2020
- HangZhou HaiCun Information Technology Co., Ltd
- Guobiao Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Double-biased three-dimensional one-time-programmable memory
- Patent number 10,706,945
- Issue date Jul 7, 2020
- HangZhou HaiCun Information Technology Co., Ltd
- Guobiao Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional one-time-programmable memory with a dummy word line
- Patent number 10,580,507
- Issue date Mar 3, 2020
- ChengDu HaiCun IP Technology LLC
- Guobiao Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional one-time-programmable memory comprising dummy bit...
- Patent number 10,573,399
- Issue date Feb 25, 2020
- HangZhou HaiCun Information Technology Co., Ltd
- Guobiao Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Dual-bit ROM cell with virtual ground line and programmable metal t...
- Patent number 10,236,071
- Issue date Mar 19, 2019
- NXP B.V.
- Rajat Kohli
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell with a read selection transistor and a program selectio...
- Patent number 10,141,035
- Issue date Nov 27, 2018
- United Microelectronics Corp.
- Tsai-Yu Huang
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Multi-bit-per-cell three-dimensional one-time-programmable memory
- Patent number 10,102,917
- Issue date Oct 16, 2018
- ChengDu HaiCun IP Technology LLC
- Guobiao Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Content addressable dynamic random-access memory with parallel sear...
- Patent number 9,899,087
- Issue date Feb 20, 2018
- Green Mountain Semiconductor Inc.
- Wolfgang Hokenmaier
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory circuit and layout structure of a memory circuit
- Patent number 9,640,229
- Issue date May 2, 2017
- Mediatek Inc.
- Dao-Ping Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Estimating flash quality using selective error emphasis
- Patent number 9,594,615
- Issue date Mar 14, 2017
- Apple Inc.
- Yael Shur
- G11 - INFORMATION STORAGE
Information Patent Grant
MLC OTP operation with diode behavior in ZnO RRAM devices for 3D me...
- Patent number 9,502,102
- Issue date Nov 22, 2016
- Crossbar, Inc.
- Tanmay Kumar
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi level antifuse memory device and method of operating the same
- Patent number 9,502,132
- Issue date Nov 22, 2016
- Samsung Electronics Co., Ltd.
- Min-Soo Jang
- G11 - INFORMATION STORAGE
Information Patent Grant
Encryption engine with twin cell memory array
- Patent number 9,497,027
- Issue date Nov 15, 2016
- GLOBALFOUNDRIES, INC.
- Xiang Chen
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Memory device, writing method, and reading method
- Patent number 9,478,307
- Issue date Oct 25, 2016
- Sony Semiconductor Solutions Corporation
- Yuki Yanagisawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Dielectric-based memory cells having multi-level one-time programma...
- Patent number 9,472,301
- Issue date Oct 18, 2016
- SanDisk Technologies LLC
- Abhijit Bandyopadhyay
- G11 - INFORMATION STORAGE
Information Patent Grant
Small-grain three-dimensional memory
- Patent number 9,293,509
- Issue date Mar 22, 2016
- HangZhou HaiCun Information Technology Co., Ltd
- Guobiao Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Read only memory having multi-bit line bit cell
- Patent number 9,286,998
- Issue date Mar 15, 2016
- Freescale Semiconductor,INC
- Paramjeet Singh
- G11 - INFORMATION STORAGE
Information Patent Grant
Multiple-bit programmable resistive memory using diode as program s...
- Patent number 9,251,893
- Issue date Feb 2, 2016
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional nonvolatile memory and method of fabrication
- Patent number 9,214,243
- Issue date Dec 15, 2015
- Sandisk 3D LLC
- Mark G. Johnson
- G11 - INFORMATION STORAGE
Information Patent Grant
Thermo programmable resistor based ROM
- Patent number 9,159,413
- Issue date Oct 13, 2015
- STMicroelectronics Pte Ltd
- Olivier Le Neel
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-bit read-only memory cell
- Patent number 9,147,495
- Issue date Sep 29, 2015
- Avago Technologies General IP (Singapore) Pte. Ltd.
- Rajiv Kumar Roy
- G11 - INFORMATION STORAGE
Information Patent Grant
Low cost programmable multi-state device
- Patent number 9,093,149
- Issue date Jul 28, 2015
- QUALCOMM Incorporated
- Xia Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Programmable resistive memory unit with multiple cells to improve y...
- Patent number 9,042,153
- Issue date May 26, 2015
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
Programmable resistive memory unit with data and reference cells
- Patent number 9,025,357
- Issue date May 5, 2015
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
Multiple-state one-time programmable (OTP) memory to function as mu...
- Patent number 9,019,742
- Issue date Apr 28, 2015
- Shine C. Chung
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MEMORY DEVICE
- Publication number 20250024671
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien Hui Huang
- G11 - INFORMATION STORAGE
Information Patent Application
RADIATION HARDENED E-FUSE MACRO
- Publication number 20240404591
- Publication date Dec 5, 2024
- BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC
- Jason F. Ross
- G11 - INFORMATION STORAGE
Information Patent Application
RADIATION HARDENED E-FUSE MACRO
- Publication number 20230197149
- Publication date Jun 22, 2023
- BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC
- Jason F. Ross
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH MULTI-LEVEL CELL ARRAY AND ASSOCIATED READ...
- Publication number 20210358543
- Publication date Nov 18, 2021
- EMEMORY TECHNOLOGY INC.
- Chia-Fu CHANG
- G11 - INFORMATION STORAGE
Information Patent Application
GRADUAL BREAKDOWN MEMORY CELL HAVING MULTIPLE DIFFERENT DIELECTRICS
- Publication number 20210125924
- Publication date Apr 29, 2021
- Hefei Reliance Memory Limited
- Liang ZHAO
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-BIT READ-ONLY MEMORY DEVICE
- Publication number 20200402574
- Publication date Dec 24, 2020
- Intel Corporation
- Xiaofei Wang
- G11 - INFORMATION STORAGE
Information Patent Application
Multi-Bit-Per-Cell Three-Dimensional Resistive Random-Access Memory...
- Publication number 20200350030
- Publication date Nov 5, 2020
- SOUTHERN UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Guobiao ZHANG
- G11 - INFORMATION STORAGE
Information Patent Application
Bi-Sided Pattern Processor
- Publication number 20190180815
- Publication date Jun 13, 2019
- HANGZHOU HAICUN INFORMATION TECHNOLOGY CO., LTD.
- Guobiao ZHANG
- G11 - INFORMATION STORAGE
Information Patent Application
DUAL-BIT ROM CELL WITH VIRTUAL GROUND LINE AND PROGRAMMABLE METAL T...
- Publication number 20190080777
- Publication date Mar 14, 2019
- NXP B.V.
- Rajat Kohli
- G11 - INFORMATION STORAGE
Information Patent Application
Three-Dimensional One-Time-Programmable Memory With A Dummy Word Line
- Publication number 20180366206
- Publication date Dec 20, 2018
- CHENGDU HAICUN IP TECHNOLOGY LLC
- Guobiao ZHANG
- G11 - INFORMATION STORAGE
Information Patent Application
Double-Biased Three-Dimensional One-Time-Programmable Memory
- Publication number 20180366207
- Publication date Dec 20, 2018
- ChengDu SanWei IP Technology LLC
- Guobiao ZHANG
- G11 - INFORMATION STORAGE
Information Patent Application
DIELECTRIC-BASED MEMORY CELLS HAVING MULTI-LEVEL ONE-TIME PROGRAMMA...
- Publication number 20150325310
- Publication date Nov 12, 2015
- SanDisk 3D LLC
- Abhijit Bandyopadhyay
- G11 - INFORMATION STORAGE
Information Patent Application
Read Only Memory Array Architecture and Methods of Operation
- Publication number 20140268986
- Publication date Sep 18, 2014
- Narayana Rao VEDULA
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL NONVOLATILE MEMORY AND METHOD OF FABRICATION
- Publication number 20140239248
- Publication date Aug 28, 2014
- SanDisk 3D LLC
- Mark G. Johnson
- G11 - INFORMATION STORAGE
Information Patent Application
TWO-BIT READ-ONLY MEMORY CELL
- Publication number 20140241028
- Publication date Aug 28, 2014
- LSI Corporation
- Rajiv Kumar Roy
- G11 - INFORMATION STORAGE
Information Patent Application
DIELECTRIC-BASED MEMORY CELLS HAVING MULTI-LEVEL ONE-TIME PROGRAMMA...
- Publication number 20140241031
- Publication date Aug 28, 2014
- SanDisk 3D LLC
- Abhijit Bandyopadhyay
- G11 - INFORMATION STORAGE
Information Patent Application
SYSTEM AND METHOD OF PROGRAMMING A MEMORY CELL
- Publication number 20140219016
- Publication date Aug 7, 2014
- QUALCOMM Incorporated
- Xia Li
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
High-Performance Scalable Read-Only-Memory Cell
- Publication number 20140140121
- Publication date May 22, 2014
- Michael Patrick Clinton
- G11 - INFORMATION STORAGE
Information Patent Application
N-BIT ROM CELL
- Publication number 20140112048
- Publication date Apr 24, 2014
- Taiwan Semiconductor Manufacturing Company Limited
- Ching-Wei Wu
- G11 - INFORMATION STORAGE
Information Patent Application
LOW COST PROGRAMMABLE MULTI-STATE DEVICE
- Publication number 20140063895
- Publication date Mar 6, 2014
- QUALCOMM Incorporated
- Xia Li
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI LEVEL ANTIFUSE MEMORY DEVICE AND METHOD OF OPERATING THE SAME
- Publication number 20140022855
- Publication date Jan 23, 2014
- MIN-SOO JANG
- G11 - INFORMATION STORAGE
Information Patent Application
PILLAR-SHAPED NONVOLATILE MEMORY AND METHOD OF FABRICATION
- Publication number 20130314970
- Publication date Nov 28, 2013
- SanDisk 3D LLC
- Mark G. Johnson
- G11 - INFORMATION STORAGE
Information Patent Application
Small-Grain Three-Dimensional Memory
- Publication number 20130258740
- Publication date Oct 3, 2013
- CHENGDU HAICUN IP TECHNOLOGY LLC
- Guobiao ZHANG
- G11 - INFORMATION STORAGE
Information Patent Application
Encoded Read-Only Memory (ROM) Bitcell, Array, and Architecture
- Publication number 20130170277
- Publication date Jul 4, 2013
- BROADCOM CORPORATION
- Myron BUER
- G11 - INFORMATION STORAGE
Information Patent Application
ANTIFUSE-BASED MEMORY CELLS HAVING MULTIPLE MEMORY STATES AND METHO...
- Publication number 20130148404
- Publication date Jun 13, 2013
- Abhijit Bandyopadhyay
- G11 - INFORMATION STORAGE
Information Patent Application
FLASH MEMORY APPARATUS AND METHODS USING A PLURALITY OF DECODING ST...
- Publication number 20130104005
- Publication date Apr 25, 2013
- Hanan Weingarten
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20130070533
- Publication date Mar 21, 2013
- Kabushiki Kaisha Toshiba
- Toshiaki DOZAKA
- G11 - INFORMATION STORAGE
Information Patent Application
Programmable Resistive Memory Unit with Data and Reference Cells
- Publication number 20120320656
- Publication date Dec 20, 2012
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Application
Programmable Resistive Memory Unit with Multiple Cells to Improve Y...
- Publication number 20120320657
- Publication date Dec 20, 2012
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Application
Multiple-Bit Programmable Resistive Memory Using Diode as Program S...
- Publication number 20120314472
- Publication date Dec 13, 2012
- Shine C. Chung
- G11 - INFORMATION STORAGE

read-only digital stores using storage elements with more than two stable states

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Radiation hardened e-fuse macro

Gradual breakdown memory cell having multiple different dielectrics

Non-volatile memory with multi-level cell array and associated read...

Multi-bit-per-cell three-dimensional resistive random-access memory...

Multi-bit read-only memory device

Bi-sided pattern processor

Double-biased three-dimensional one-time-programmable memory

Three-dimensional one-time-programmable memory with a dummy word line

Three-dimensional one-time-programmable memory comprising dummy bit...

Dual-bit ROM cell with virtual ground line and programmable metal t...

Memory cell with a read selection transistor and a program selectio...

Multi-bit-per-cell three-dimensional one-time-programmable memory

Content addressable dynamic random-access memory with parallel sear...

Memory circuit and layout structure of a memory circuit

Estimating flash quality using selective error emphasis

MLC OTP operation with diode behavior in ZnO RRAM devices for 3D me...

Multi level antifuse memory device and method of operating the same

Encryption engine with twin cell memory array

Memory device, writing method, and reading method

Dielectric-based memory cells having multi-level one-time programma...

Small-grain three-dimensional memory

Read only memory having multi-bit line bit cell

Multiple-bit programmable resistive memory using diode as program s...

Three-dimensional nonvolatile memory and method of fabrication

Thermo programmable resistor based ROM

Two-bit read-only memory cell

Low cost programmable multi-state device

Programmable resistive memory unit with multiple cells to improve y...

Programmable resistive memory unit with data and reference cells

Multiple-state one-time programmable (OTP) memory to function as mu...

Patents Applicationslast 30 patents

MEMORY DEVICE

RADIATION HARDENED E-FUSE MACRO

RADIATION HARDENED E-FUSE MACRO

NON-VOLATILE MEMORY WITH MULTI-LEVEL CELL ARRAY AND ASSOCIATED READ...

GRADUAL BREAKDOWN MEMORY CELL HAVING MULTIPLE DIFFERENT DIELECTRICS

MULTI-BIT READ-ONLY MEMORY DEVICE

Multi-Bit-Per-Cell Three-Dimensional Resistive Random-Access Memory...

Bi-Sided Pattern Processor

DUAL-BIT ROM CELL WITH VIRTUAL GROUND LINE AND PROGRAMMABLE METAL T...

Three-Dimensional One-Time-Programmable Memory With A Dummy Word Line

Double-Biased Three-Dimensional One-Time-Programmable Memory

DIELECTRIC-BASED MEMORY CELLS HAVING MULTI-LEVEL ONE-TIME PROGRAMMA...

Read Only Memory Array Architecture and Methods of Operation

THREE-DIMENSIONAL NONVOLATILE MEMORY AND METHOD OF FABRICATION

TWO-BIT READ-ONLY MEMORY CELL

DIELECTRIC-BASED MEMORY CELLS HAVING MULTI-LEVEL ONE-TIME PROGRAMMA...

SYSTEM AND METHOD OF PROGRAMMING A MEMORY CELL

High-Performance Scalable Read-Only-Memory Cell

N-BIT ROM CELL

LOW COST PROGRAMMABLE MULTI-STATE DEVICE

MULTI LEVEL ANTIFUSE MEMORY DEVICE AND METHOD OF OPERATING THE SAME

PILLAR-SHAPED NONVOLATILE MEMORY AND METHOD OF FABRICATION

Small-Grain Three-Dimensional Memory

Encoded Read-Only Memory (ROM) Bitcell, Array, and Architecture

ANTIFUSE-BASED MEMORY CELLS HAVING MULTIPLE MEMORY STATES AND METHO...

FLASH MEMORY APPARATUS AND METHODS USING A PLURALITY OF DECODING ST...

SEMICONDUCTOR MEMORY DEVICE

Programmable Resistive Memory Unit with Data and Reference Cells

Programmable Resistive Memory Unit with Multiple Cells to Improve Y...

Multiple-Bit Programmable Resistive Memory Using Diode as Program S...