Read using current through the cell

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G11C2013/0045Read using current through the cell

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Patents Grantslast 30 patents

Information Patent Grant
Device with neural network
- Patent number 12,230,321
- Issue date Feb 18, 2025
- Samsung Electronics Co., Ltd.
- Jung-Hoon Chun
- G11 - INFORMATION STORAGE
Information Patent Grant
Dynamically boosting read voltage for a memory device
- Patent number 12,205,641
- Issue date Jan 21, 2025
- Micron Technology, Inc.
- Nicola Ciocchini
- G11 - INFORMATION STORAGE
Information Patent Grant
Technologies for controlling current through memory cells
- Patent number 12,154,623
- Issue date Nov 26, 2024
- Intel Corporation
- Noble Narku-Tetteh
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory having both volatile and non-volatile function...
- Patent number 12,148,472
- Issue date Nov 19, 2024
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Cross-point array IHOLD read margin improvement
- Patent number 12,148,459
- Issue date Nov 19, 2024
- SanDisk Technologies LLC
- Ward Parkinson
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of training a logistic regression classifier with a resistiv...
- Patent number 12,136,022
- Issue date Nov 5, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Thomas Dalgaty
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Phase-change memory including phase-change elements in series with...
- Patent number 12,120,967
- Issue date Oct 15, 2024
- STMicroelectronics S.r.l.
- Giovanni Campardo
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-step pre-read for write operations in memory devices
- Patent number 12,106,803
- Issue date Oct 1, 2024
- Micron Technology, Inc.
- Yen Chun Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cells with asymmetrical electrode interfaces
- Patent number 12,082,513
- Issue date Sep 3, 2024
- Micron Technology, Inc.
- Agostino Pirovano
- G11 - INFORMATION STORAGE
Information Patent Grant
Forming control method applied to resistive random-access memory ce...
- Patent number 12,063,774
- Issue date Aug 13, 2024
- eMemory Technology Inc.
- Tsung-Mu Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell including programmable resistors with transistor compon...
- Patent number 12,051,466
- Issue date Jul 30, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Der Chih
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and operating method thereof
- Patent number 12,033,697
- Issue date Jul 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yen-Cheng Chiu
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device architecture using multiple physical cells per bit to...
- Patent number 12,020,743
- Issue date Jun 25, 2024
- Micron Technology, Inc.
- Joseph Michael McCrate
- G11 - INFORMATION STORAGE
Information Patent Grant
Data readout circuit of resistive random access memory and resistiv...
- Patent number 12,002,509
- Issue date Jun 4, 2024
- INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES
- Feng Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive random access memory for physically unclonable fun...
- Patent number 11,980,026
- Issue date May 7, 2024
- eMemory Technology Inc.
- Tsung-Mu Lai
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory devices and methods of forming the same
- Patent number 11,978,510
- Issue date May 7, 2024
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Curtis Chun-I Hsieh
- G11 - INFORMATION STORAGE
Information Patent Grant
Filament forming method for resistive memory unit
- Patent number 11,972,799
- Issue date Apr 30, 2024
- Winbond Electronics Corp.
- Frederick Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive random access memory device with three-dimensional cross-...
- Patent number 11,972,796
- Issue date Apr 30, 2024
- Kioxia Corporation
- Kikuko Sugimae
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods for accessing resistive change elements operable as antifuses
- Patent number 11,972,830
- Issue date Apr 30, 2024
- Nantero, Inc.
- Jia Luo
- G11 - INFORMATION STORAGE
Information Patent Grant
Distinct chip identifier sequence utilizing unclonable characterist...
- Patent number 11,967,376
- Issue date Apr 23, 2024
- Crossbar, Inc.
- Sung Hyun Jo
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory array with asymmetric bit-line architecture
- Patent number 11,963,369
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Li Chiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Bispecific binding molecules that are capable of binding CD137 and...
- Patent number 11,942,149
- Issue date Mar 26, 2024
- MacroGenics, Inc.
- Liqin Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Systems and methods for dynamically reconfigurable artificial synap...
- Patent number 11,930,723
- Issue date Mar 12, 2024
- National Technology & Engineering Solutions of Sandia, LLC
- Albert Alec Talin
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive random access memory device
- Patent number 11,915,754
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Der Chih
- G11 - INFORMATION STORAGE
Information Patent Grant
Systems and methods for adaptive self-referenced reads of memory de...
- Patent number 11,887,664
- Issue date Jan 30, 2024
- Micron Technology, Inc.
- Graziano Mirichigni
- G11 - INFORMATION STORAGE
Information Patent Grant
Systems and methods for adaptive self-referenced reads of memory de...
- Patent number 11,887,663
- Issue date Jan 30, 2024
- Micron Technology, Inc.
- Graziano Mirichigni
- G11 - INFORMATION STORAGE
Information Patent Grant
Structure for multiple sense amplifiers of memory device
- Patent number 11,854,617
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hiroki Noguchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and reference circuit thereof
- Patent number 11,848,040
- Issue date Dec 19, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Fu Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistance change memory cell circuits and methods
- Patent number 11,848,050
- Issue date Dec 19, 2023
- Hefei Reliance Memory Limited
- Brent Steven Haukness
- G11 - INFORMATION STORAGE
Information Patent Grant
Drift mitigation for resistive memory devices
- Patent number 11,805,713
- Issue date Oct 31, 2023
- International Business Machines Corporation
- Guy M. Cohen
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor Memory Having Both Volatile and Non-Volatile Function...
- Publication number 20250037766
- Publication date Jan 30, 2025
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY UNIT WITH ONE-WAY CONDUCTION CHARACT...
- Publication number 20250029655
- Publication date Jan 23, 2025
- National Tsing Hua University
- Ya-Chin KING
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-STEP PRE-READ FOR WRITE OPERATIONS IN MEMORY DEVICES
- Publication number 20250014641
- Publication date Jan 9, 2025
- Micron Technology, Inc.
- Yen Chun Lee
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE-CHANGE MEMORY INCLUDING PHASE-CHANGE ELEMENTS IN SERIES WITH...
- Publication number 20250008847
- Publication date Jan 2, 2025
- STMicroelectronics S.r.l
- Giovanni Campardo
- G11 - INFORMATION STORAGE
Information Patent Application
CURRENT SOURCE FOR READ OF PROGRAMMABLE RESISTANCE MEMORY CELLS
- Publication number 20240395301
- Publication date Nov 28, 2024
- Western Digital Technologies, Inc.
- Christopher J. Petti
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR READING A MULTI-LEVEL NON-VOLATILE MEMORY DEVICE, IN PAR...
- Publication number 20240386954
- Publication date Nov 21, 2024
- STMicroelectronics International N.V.
- Xavier LECOQ
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL INCLUDING PROGRAMMABLE RESISTORS WITH TRANSISTOR COMPON...
- Publication number 20240355388
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Der Chih
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE ARCHITECTURE USING MULTIPLE PHYSICAL CELLS PER BIT TO...
- Publication number 20240339149
- Publication date Oct 10, 2024
- Micron Technology, Inc.
- Joseph Michael McCrate
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND OPERATING METHOD THEREOF
- Publication number 20240321354
- Publication date Sep 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Cheng CHIU
- G11 - INFORMATION STORAGE
Information Patent Application
FORMING OPERATION METHOD OF RESISTIVE RANDOM ACCESS MEMORY
- Publication number 20240282371
- Publication date Aug 22, 2024
- United Microelectronics Corp.
- Yi Ting Hung
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY ARRAY WITH ASYMMETRIC BIT-LINE ARCHITECTURE
- Publication number 20240260279
- Publication date Aug 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Li Chiang
- G11 - INFORMATION STORAGE
Information Patent Application
BISPECIFIC BINDING MOLECULES THAT ARE CAPABLE OF BINDING CD137 AND...
- Publication number 20240233818
- Publication date Jul 11, 2024
- MacroGenics, Inc.
- Liqin LIU
- G11 - INFORMATION STORAGE
Information Patent Application
TEMPORAL KERNEL DEVICES, TEMPORAL KERNEL COMPUTING SYSTEMS, AND MET...
- Publication number 20240215265
- Publication date Jun 27, 2024
- Seoul National University R&DB Foundation
- Cheol Seong Hwang
- G11 - INFORMATION STORAGE
Information Patent Application
DATA READOUT CIRCUIT OF RESISTIVE RANDOM ACCESS MEMORY AND RESISTIV...
- Publication number 20240153554
- Publication date May 9, 2024
- INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES
- Feng ZHANG
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY DEVICE
- Publication number 20240153559
- Publication date May 9, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Yu-Der CHIH
- G11 - INFORMATION STORAGE
Information Patent Application
STRUCTURE FOR MULTIPLE SENSE AMPLIFIERS OF MEMORY DEVICE
- Publication number 20240127887
- Publication date Apr 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hiroki NOGUCHI
- G11 - INFORMATION STORAGE
Information Patent Application
DEVICES AND METHODS FOR READING A MEMRISTIVE ELEMENT
- Publication number 20240120003
- Publication date Apr 11, 2024
- Sahitya Varma VEGESNA
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SYSTEMS AND TECHNIQUES FOR ACCESSING MULTIPLE MEMORY CELLS CONCURRE...
- Publication number 20240013833
- Publication date Jan 11, 2024
- Micron Technology, Inc.
- Federico Pio
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor Memory Having Both Volatile and Non-Volatile Function...
- Publication number 20230343392
- Publication date Oct 26, 2023
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PHASE CHANGE MEMORY CELL WITH DOUBLE ACTIVE VOLUME
- Publication number 20230284541
- Publication date Sep 7, 2023
- International Business Machines Corporation
- Timothy Mathew Philip
- G11 - INFORMATION STORAGE
Information Patent Application
FILAMENT FORMING METHOD FOR RESISTIVE MEMORY UNIT
- Publication number 20230282279
- Publication date Sep 7, 2023
- WINBOND ELECTRONICS CORP.
- Frederick Chen
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND OPERATING METHOD THEREOF
- Publication number 20230260575
- Publication date Aug 17, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Cheng CHIU
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL INCLUDING PROGRAMMABLE RESISTORS WITH TRANSISTOR COMPON...
- Publication number 20230253040
- Publication date Aug 10, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Der Chih
- G11 - INFORMATION STORAGE
Information Patent Application
DATA READING CIRCUIT AND DATA READING CIRCUIT CONTROL METHOD
- Publication number 20230245700
- Publication date Aug 3, 2023
- Huawei Technologies Co., Ltd
- Ziyue Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
SENSE AMPLIFIER ARCHITECTURE FOR A NON-VOLATILE MEMORY STORING CODE...
- Publication number 20230245699
- Publication date Aug 3, 2023
- STMicroelectronics S.r.l.
- Fabio Enrico Carlo DISEGNI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE ARCHITECTURE USING MULTIPLE PHYSICAL CELLS PER BIT TO...
- Publication number 20230215489
- Publication date Jul 6, 2023
- Micron Technology, Inc.
- Joseph Michael McCrate
- G11 - INFORMATION STORAGE
Information Patent Application
DRIFT MITIGATION FOR RESISTIVE MEMORY DEVICES
- Publication number 20230180643
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE FOR MULTIPLE SENSE AMPLIFIERS OF MEMORY DEVICE
- Publication number 20230154533
- Publication date May 18, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hiroki NOGUCHI
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME
- Publication number 20230138802
- Publication date May 4, 2023
- Semiconductor Energy Laboratory Co., Ltd.
- Hideki Uochi
- G11 - INFORMATION STORAGE
Information Patent Application
SYSTEMS AND METHODS FOR ADAPTIVE SELF-REFERENCED READS OF MEMORY DE...
- Publication number 20230109794
- Publication date Apr 13, 2023
- Micron Technology, Inc.
- Graziano Mirichigni
- G11 - INFORMATION STORAGE

Read using current through the cell

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Device with neural network

Dynamically boosting read voltage for a memory device

Technologies for controlling current through memory cells

Semiconductor memory having both volatile and non-volatile function...

Cross-point array IHOLD read margin improvement

Method of training a logistic regression classifier with a resistiv...

Phase-change memory including phase-change elements in series with...

Multi-step pre-read for write operations in memory devices

Memory cells with asymmetrical electrode interfaces

Forming control method applied to resistive random-access memory ce...

Memory cell including programmable resistors with transistor compon...

Memory device and operating method thereof

Memory device architecture using multiple physical cells per bit to...

Data readout circuit of resistive random access memory and resistiv...

Magnetoresistive random access memory for physically unclonable fun...

Memory devices and methods of forming the same

Filament forming method for resistive memory unit

Resistive random access memory device with three-dimensional cross-...

Methods for accessing resistive change elements operable as antifuses

Distinct chip identifier sequence utilizing unclonable characterist...

Memory array with asymmetric bit-line architecture

Bispecific binding molecules that are capable of binding CD137 and...

Systems and methods for dynamically reconfigurable artificial synap...

Resistive random access memory device

Systems and methods for adaptive self-referenced reads of memory de...

Systems and methods for adaptive self-referenced reads of memory de...

Structure for multiple sense amplifiers of memory device

Memory device and reference circuit thereof

Resistance change memory cell circuits and methods

Drift mitigation for resistive memory devices

Patents Applicationslast 30 patents

Semiconductor Memory Having Both Volatile and Non-Volatile Function...

RESISTIVE RANDOM ACCESS MEMORY UNIT WITH ONE-WAY CONDUCTION CHARACT...

MULTI-STEP PRE-READ FOR WRITE OPERATIONS IN MEMORY DEVICES

PHASE-CHANGE MEMORY INCLUDING PHASE-CHANGE ELEMENTS IN SERIES WITH...

CURRENT SOURCE FOR READ OF PROGRAMMABLE RESISTANCE MEMORY CELLS

METHOD FOR READING A MULTI-LEVEL NON-VOLATILE MEMORY DEVICE, IN PAR...

MEMORY CELL INCLUDING PROGRAMMABLE RESISTORS WITH TRANSISTOR COMPON...

MEMORY DEVICE ARCHITECTURE USING MULTIPLE PHYSICAL CELLS PER BIT TO...

MEMORY DEVICE AND OPERATING METHOD THEREOF

FORMING OPERATION METHOD OF RESISTIVE RANDOM ACCESS MEMORY

MEMORY ARRAY WITH ASYMMETRIC BIT-LINE ARCHITECTURE

BISPECIFIC BINDING MOLECULES THAT ARE CAPABLE OF BINDING CD137 AND...

TEMPORAL KERNEL DEVICES, TEMPORAL KERNEL COMPUTING SYSTEMS, AND MET...

DATA READOUT CIRCUIT OF RESISTIVE RANDOM ACCESS MEMORY AND RESISTIV...

RESISTIVE RANDOM ACCESS MEMORY DEVICE

STRUCTURE FOR MULTIPLE SENSE AMPLIFIERS OF MEMORY DEVICE

DEVICES AND METHODS FOR READING A MEMRISTIVE ELEMENT

SYSTEMS AND TECHNIQUES FOR ACCESSING MULTIPLE MEMORY CELLS CONCURRE...

Semiconductor Memory Having Both Volatile and Non-Volatile Function...

PHASE CHANGE MEMORY CELL WITH DOUBLE ACTIVE VOLUME

FILAMENT FORMING METHOD FOR RESISTIVE MEMORY UNIT

MEMORY DEVICE AND OPERATING METHOD THEREOF

MEMORY CELL INCLUDING PROGRAMMABLE RESISTORS WITH TRANSISTOR COMPON...

DATA READING CIRCUIT AND DATA READING CIRCUIT CONTROL METHOD

SENSE AMPLIFIER ARCHITECTURE FOR A NON-VOLATILE MEMORY STORING CODE...

MEMORY DEVICE ARCHITECTURE USING MULTIPLE PHYSICAL CELLS PER BIT TO...

DRIFT MITIGATION FOR RESISTIVE MEMORY DEVICES

STRUCTURE FOR MULTIPLE SENSE AMPLIFIERS OF MEMORY DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME

SYSTEMS AND METHODS FOR ADAPTIVE SELF-REFERENCED READS OF MEMORY DE...